CN103730377A - 粘晶方法及其装置 - Google Patents

粘晶方法及其装置 Download PDF

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CN103730377A
CN103730377A CN201210443956.XA CN201210443956A CN103730377A CN 103730377 A CN103730377 A CN 103730377A CN 201210443956 A CN201210443956 A CN 201210443956A CN 103730377 A CN103730377 A CN 103730377A
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吕文镕
吴文献
苏濬贤
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Industrial Technology Research Institute ITRI
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Abstract

本发明公开了一种粘晶方法，其步骤包含有：将一基板加热至一预定温度；吸取至少一晶粒，该至少一晶粒具有一基础温度，该基础温度小于该预定温度；将该至少一晶粒固晶于该基板；冷却该已固晶的基板；以及将该已固晶的基板移至一上下料位置，加热另一基板至该预定温度，并重复上述的步骤。

Description

粘晶方法及其装置
技术领域
本发明涉及一种粘晶方法及其装置，尤其是一种预热晶粒与粘合晶粒的粘晶方法与装置。
背景技术
光电元件，广为应用于目前的日常生活中，举例而言，光电元件中以发光二极管(Light-Emitting Diode，LED)最具有代表性，因发光二极管已被视为下一代照明光源，以取代传统的日光灯与卤素灯。
现有的光电元件的制作工艺，是将一晶粒置放于基板，以使二者相粘合，然而在置放过程中，是使用一取放装置，将晶粒由晶粒供应单元取出，放置于晶粒暂放平台，再由另一取放装置，从晶粒暂放平台取出晶粒，贴合于基板上，晶粒粘合基板前，晶粒需要历经多次取放，并且前述的制作工艺是依靠单一固晶机构与单一制作平台，所以现有的光电元件需要较长的制作时间，并且具有较为繁复的生产流程。
发明内容
在本发明的一实施例中，本发明的目的在于提供一种粘晶方法，其步骤包含有：
将一基板加热至一预定温度；
吸取至少一晶粒；
将该至少一晶粒固晶于该基板；
冷却已固晶的基板；以及
将该已固晶的基板移至一上下料位置，加热另一基板至该预定温度，并重复上述的步骤。
在本发明的另一实施例中，本发明的目的在于提供一种粘晶装置，其包含有：
一基台；
一晶粒供应单元，其设于该基台的一端；
一基板加热及冷却单元，其设于该基台的另一端；以及
一固晶单元，其设于该基台的顶端，并且能够于该晶粒供应单元与该基板加热及冷却单元之间移动。
本发明仅需将晶粒从晶圆盘取出直接固晶于基板上；另一方面，本发明有多组晶粒取放固晶机构，可一次从晶圆盘取出多颗晶粒，缩短取放时间；最后，本发明拥有双固晶平台，在其中一平台进行固晶制作时，另一平台可进行冷却与上下料基板，可有效降低制程时间。
附图说明
图1是本发明的一种粘晶装置的立体示意图。
图2是一晶粒供应单元的立体示意图。
图3是一控温模块的立体示意图。
图4是一取放固晶模块的立体示意图。
图5是一晶粒供应单元与一取放固晶模块的局部动作示意图。
图6是晶粒供应单元、取放固晶模块与一基板加热及冷却单元的动作示意图。
图7是取放固晶模块与基板加热及冷却单元的局部动作示意图。
图8是本发明的一种粘晶方法的流程示意图。
【主要元件符号说明】
1    基台
2    晶粒供应单元
20   晶圆工作台
200  晶圆盘载台
201  旋转模块
202  工作台X轴向移动单元
203  工作台Y轴向移动单元
21   晶粒顶出模块
3    基板加热及冷却单元
30        Y轴向移动模块
31        控温模块
311       冷却液流入管
312       冷却液流出管
313       恒温液入管
314       温度传感器
315       隔热板
316       支撑座
317       恒温板
318       附加电路板
319       恒温液出管
4         固晶单元
40        固晶单元Y轴向移动模块
41        取放固晶模块
410       第一视觉模块
411       可调整加压模块
412       真空吸放转接器
414       晶粒吸嘴
415       角度对位模块
42        取放固晶模块Z轴向对位模块
43        取放固晶模块X轴向移动模块
5         第二视觉模块
S1～S8    步骤
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明进一步详细说明。
参考图1所示，本发明提供一种粘晶装置，其具有一基台1、一晶粒供应单元2、一基板加热及冷却单元3、一固晶单元4、一第一视觉模块410与一第二视觉模块5。
晶粒供应单元2设于基台1的一端，参考图2与图1所示，晶粒供应单元2具有一晶圆工作台20与一晶粒顶出模块21。
晶圆工作台20具有一晶圆盘载台200、一旋转模块201、一工作台X轴向移动单元202与一工作台Y轴向移动单元203，晶圆盘载台200设于旋转模块201的顶端，旋转模块201使晶圆盘载台200得以转动一角度，该角度能够为0至360度，举例而言，该角度能够为0至360度中的任一度数，但不限制，工作台X轴向移动单元202与工作台Y轴向移动单元203设于晶圆盘载台200的底端，工作台X轴向移动单元202使晶圆盘载台200能够沿着一X轴向移动，工作台Y轴向移动单元203使晶圆盘载台200能够沿着一Y轴向移动，如图所示，该X轴向垂直于该Y轴向。
晶粒顶出模块21设于晶圆盘载台200的底端。
基板加热及冷却单元3设于基台1的另一端，请配合参考图3与图1所示，基板加热及冷却单元3具有至少一控温模块31与至少一Y轴向移动模块30。
控温模块31设于Y轴向移动模块30，Y轴向移动模块30使控温模块31能够沿着Y轴向移动，本实施例中，控温模块31与Y轴向移动模块30的数量分别为两个，控温模块31具有一附加电路板318、一恒温板317、至少一支撑座316与一温度传感器314。
附加电路板318具有至少一冷却液流入管311、至少一冷却液流出管310、至少一加热管312与一隔热板315，冷却液流入管311能够将冷却液导入附加电路板318的内部，以冷却附加电路板318，冷却液流出管312能够将冷却液由附加电路板318的内部导出至附加电路板318的外部，加热管312能够为一电气加热管，加热管312能够加热附加电路板318，以使附加电路板318的温度提升至一预定温度，隔热板315设于附加电路板318的底部，以预防被加热的附加电路板318的热能影响位于附加电路板318底端的构件。
支撑座316设于附加电路板318与恒温板317之间，以使附加电路板318与恒温板317之间形成有可供温度传感器314设置的空间。
恒温板317具有至少一恒温液入管313与一恒温液出管319，恒温液入管313可将一恒温液导入恒温板317的内部，以使控温模块31维持于一特定温度，恒温液出管319可将恒温液由恒温板317的内部导出至恒温板317的外部。
固晶单元4设于基台1的顶端，并且能够在晶粒供应单元2与基板加热及冷却单元3之间移动，请配合参考图4与图1所示，固晶单元4具有一固晶单元Y轴向移动模块40、一取放固晶模块41、一取放固晶模块Z轴向对位模块42与一取放固晶模块X轴向移动模块43。
固晶单元Y轴向移动模块40设于基台1的两侧，固晶单元Y轴向移动模块40使取放固晶模块41能够沿着于Y轴向移动。
取放固晶模块41具有多个晶粒吸嘴414、多个角度对位模块415、多个真空吸放转接器412与多个可调整加压模块411。
各晶粒吸嘴414耦接各角度对位模块415，各角度对位模块415可使各晶粒吸嘴414转动一角度，举例而言，该角度能够为0至360度的任一度数，但不限制。
各晶粒吸嘴414进一步耦接各真空吸放转接器412，及耦接各可调整加压模块411，各真空吸放转接器412可使各晶粒吸嘴414具有真空吸力及下压推力。
各可调整加压模块411耦接各真空吸放转接器412，各可调整加压模块411能够调整各真空吸放转接器412提供给各晶粒吸嘴414的下压推力，各可调整加压模块411能够进一步调整一固晶时间。
取放固晶模块Z轴向对位模块42耦接取放固晶模块41，取放固晶模块Z轴向对位模块42可改变取放固晶模块41于一Z轴向的位置，该Z轴向垂直于前述的X轴向与Y轴向。
取放固晶模块X轴向移动模块43耦接取放固晶模块41与固晶单元Y轴向移动模块40，取放固晶模块X轴向移动模块43使取放固晶模块41得以沿着X轴向移动。
第一视觉模块410设于取放固晶模块41，并且与取放固晶模块41联动。
第二视觉模块5设于基台1的顶端，并且位于晶粒供应单元2与基板加热及冷却单元3之间。
请配合参考图5及图1所示，取放固晶模块41经由取放固晶模块X轴向移动模块43、取放固晶模块Z轴向对位模块42与固晶单元Y轴向移动模块40的移动，而使取放固晶模块41移动至晶圆工作台20的上方。
取放固晶模块41位于欲被吸取的晶粒的上方，晶粒顶出模块21则将欲被吸取的晶粒顶出，以使各晶粒吸嘴414得以依序吸取晶粒。
请配合参考图6所示，已吸取有多个晶粒的取放固晶模块41沿着Z轴向、Y轴向与X轴向移动至控温模块31的上方，温控模块31具有一已预热的基板，在取放固晶模块41的移动过程中，第二视觉模块5由下往上拍摄位于各晶粒吸嘴414的晶粒的影像，若晶粒的位置有所偏移，角度对位模块415将晶粒吸嘴414转动一角度，以调整晶粒的位置。
请配合参考图7所示，当取放固晶模块41位于已预热的基板的上方时，取放固晶模块41提供一下压推力，以将晶粒固晶于基板。
请再配合参考图6所示，当基板已完成固晶后，控温模块31移动至一上下料位置，在退至上下料位置的行程中，控温模块31对已固晶的基板进行冷却，另一具有已预热的基板的控温模块31移动至上述的固晶的位置，以进行固晶。
请配合参考图8所示，本发明提供一种粘晶方法，其步骤包含有：
S1：至少一控温模块31将一基板加热至第一预定温度，该第一预定温度为一焊料熔点温度，举例而言，该焊料熔点温度为85至200℃的任一温度，但不限制，承上的图1与图3，加热管312加热附加电路板318，位于附加电路板318的基板亦同被加热，直至温度传感器314感测控温模块31已达一预定温度，一具有预定温度的恒温液导入恒温板317内部，其使控温模块31维持于恒温状态，即维持于预定温度的状态，若温度传感器314感测控温模块31低于预定温度，则加热管312再度加热附加电路板318，直至恢复至预定温度。
S2：第一视觉模块410定位一位于晶圆盘载台200的晶圆，晶圆具有多个晶粒，该晶粒具有一基础温度，基础温度为一室温，基础温度小于上述的预定温度。
S3：承上的图2与图1，晶粒供应单元2依据第一视觉模块410所拍摄的影像，旋转模块201能够选择性将晶圆盘载台200转动一角度，或者第一轴向移动单元202能够选择性将晶圆盘载台200沿着第一轴向移动一距离，或者第二轴向移动单元203能够选择性将晶圆盘载台200沿着第二轴向移动一距离。
请配合参考图5所示，固晶单元4通过固晶单元Y轴向移动模块40、取放固晶模块Z轴向对位模块42与取放固晶模块X轴向移动43，以使取放固晶模块41移动至欲被吸取的晶粒的上方，晶粒顶出模块21则将欲被吸取的晶粒顶出，以使各晶粒吸嘴414得以依序吸取晶粒。
S4：如图6与图1所示，待取放固晶模块41已吸取有晶粒后，取放固晶模块41则朝向基板加热及冷却单元3方向移动，即取放固晶模块41先朝向Z轴向移动，即向上移动一距离，再朝向Y轴向移动，即朝向基板加热及冷却单元3方向移动，当取放固晶模块41通过第二视觉模块5的上方时，由下往上拍摄影像的第二视觉模块5拍摄位于各晶粒吸嘴414的晶粒的影像，若晶粒的位置有所偏移，角度对位模块415将晶粒吸嘴414转动一角度，以调整晶粒的位置；简而言之，角度对位模块415以第二视觉模块5所摄取的影像，以补偿晶粒的位置。
S5：取放固晶模块41持续移动至已被加热至预定温度的基板的上方，第一视觉模块410拍摄基板的影像，以补正晶粒位置与基板位置。
S6：如图7所示，当取放固晶模块41抵达基板上方时，取放固晶模块41再次沿着Z轴向移动，即下降一距离，取放固晶模块41则提供一下压推力，以将晶粒固晶于基板。
S7：如图3所示，控温模块31对基板进行冷却，冷却液导入附加电路板318内部，进而冷却基板，另一控温模块31则加热另一需要固晶的基板。
S8：请再配合参考图6所示，Y轴向移动模块30将具有已完成固晶的基板的控温模块31移动至一上下料位置，Y轴向移动模块30将另一具有该加热的基板的控温模块31移动至上述的固晶的位置，而且重复上述的步骤。
综合上述，本发明提供一加热基板，以使基板具有一预定温度，在将具有一基础温度的晶粒固晶于基板，再通过视觉模块，第一视觉模块与第二视觉模块，依序将多个晶粒固晶于基板，故本发明是整合晶粒取放与粘晶制作过程，并能缩短制作时间，以及简化繁复生产流程。
本发明仅需将晶粒从晶圆盘取出直接固晶于基板上；另一方面，本发明有多组晶粒取放固晶机构，可一次从晶圆盘取出多颗晶粒，缩短取放时间；最后，本发明拥有双固晶平台，在其中一平台进行固晶制作时，另一平台可进行冷却与上下料基板，可有效降低制程时间。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (19)

1.一种粘晶方法，其特征在于，其步骤包含有：
将一基板加热至一预定温度；
吸取至少一晶粒；
将该至少一晶粒固晶于该基板；
冷却已固晶的基板；以及
将该已固晶的基板移至一上下料位置，加热另一基板至该预定温度，并重复上述的步骤。
2.如权利要求1所述的粘晶方法，其中该预定温度为85至200℃。
3.如权利要求1所述的粘晶方法，其中该基板被一基板加热及冷却单元加热至该预定温度，并且该基板被该基板加热及冷却单元所冷却。
4.如权利要求1所述的粘晶方法，其中该至少一晶粒由一晶粒供应单元所提供。
5.如权利要求4所述的粘晶方法，其中该晶粒供应单元可供一具有多个晶粒的晶圆设置，该晶粒供应单元能够选择性将该晶圆转动一角度，该晶粒供应单元能选择性将该晶圆沿着一X轴向或一Y轴向移动一距离。
6.如权利要求1所述的粘晶方法，其中该至少一晶粒的吸取与固晶由一固晶单元所执行。
7.如权利要求1所述的粘晶方法，其特征在于，其进一步具有一第一视觉模块拍摄该至少一晶粒的影像，以供吸取该至少一晶粒。
8.如权利要求7所述的粘晶方法，其中该第一视觉模块拍摄该基板的影像，以补正该至少一晶粒的位置与该基板的位置。
9.如权利要求1所述的粘晶方法，其特征在于，其进一步具有一第二视觉模块由下往上拍摄该至少一晶粒的影像，以调整该至少一晶粒的位置。
10.一种粘晶装置，其特征在于，其包含有：
一基台；
一晶粒供应单元，其设于该基台的一端；
一基板加热及冷却单元，其设于该基台的另一端；以及
一固晶单元，其设于该基台的顶端，并且能够于该晶粒供应单元与该基板加热及冷却单元之间移动。
11.如权利要求10所述的粘晶装置，其中该基板加热及冷却单元具有至少一控温模块与至少一Y轴向移动模块，该控温模块设于该Y轴向移动模块。
12.如权利要求11所述的粘晶装置，其中该控温模块具有一附加电路板、一恒温板与一温度传感器，该附加电路板具有至少一冷却液流入管、至少一冷却液流出管、至少一加热管，该温度传感器设于该附加电路板与该恒温板之间，该恒温板具有至少一恒温液入管与一恒温液出管。
13.如权利要求12所述的粘晶装置，其中该控温模块进一步具有至少一支撑座，该至少一支撑座设于该附加电路板与该恒温板之间，该附加电路板的底部进一步具有一隔热板。
14.如权利要求10所述的粘晶装置，其中该固晶单元具有一固晶单元Y轴向移动模块、一取放固晶模块、一取放固晶模块Z轴向对位模块与一取放固晶模块X轴向移动模块，该固晶单元Y轴向移动模块设于该基台的两侧，该取放固晶模块Z轴向对位模块耦接该取放固晶模块，该取放固晶模块X轴向移动模块耦接该取放固晶模块与该固晶单元Y轴向移动模块。
15.如权利要求14所述的粘晶装置，其中该取放固晶模块具有多个晶粒吸嘴、多个角度对位模块、多个真空吸放转接器与多个可调整加压模块，各晶粒吸嘴耦接各角度对位模块，各真空吸放转接器耦接各晶粒吸嘴，各可调整加压模块耦接各真空吸放转接器。
16.如权利要求10所述的粘晶装置，其特征在于，其进一步具有一第一视觉模块设于该取放固晶模块。
17.如权利要求10所述的粘晶装置，其特征在于，其进一步具有一第二视觉模块，其设于该基台的顶端，并且位于该晶粒供应单元与该基板加热及冷却单元之间。
18.如权利要求10所述的粘晶装置，其中该晶粒供应单元具有一晶圆工作台与一晶粒顶出模块，该晶粒顶出模块设于该晶圆工作台的底端。
19.如权利要求18所述的粘晶装置，其中该晶圆工作台具有一晶圆盘载台、一旋转模块、一工作台X轴向移动单元与一工作台Y轴向移动单元，该晶圆盘载台设于该旋转模块的顶端，该工作台X轴向移动单元与该工作台Y轴向移动单元设于该晶圆盘载台的底端。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113299577A (zh) * 2020-02-21 2021-08-24 均华精密工业股份有限公司 粘晶机
CN114883223A (zh) * 2022-05-23 2022-08-09 江苏新智达新能源设备有限公司 一种半导体共晶焊的封装装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9093549B2 (en) 2013-07-02 2015-07-28 Kulicke And Soffa Industries, Inc. Bond heads for thermocompression bonders, thermocompression bonders, and methods of operating the same
JP6584234B2 (ja) * 2015-08-31 2019-10-02 ファスフォードテクノロジ株式会社 ダイボンダ、ボンディング方法および半導体装置の製造方法
US10500661B2 (en) * 2015-11-06 2019-12-10 Toyota Motor Engineering & Manufacturing North America, Inc. Methods and apparatuses for high temperature bonding controlled processing and bonded substrates formed therefrom
CN105390593A (zh) * 2015-12-17 2016-03-09 叶志伟 采用异方向导电胶封装的led热压机及热压工艺
CN107134422A (zh) * 2016-02-29 2017-09-05 上海微电子装备（集团）股份有限公司 芯片键合装置及方法
KR101901028B1 (ko) * 2016-11-28 2018-11-08 세메스 주식회사 본딩 헤드 및 이를 포함하는 다이 본딩 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4627151A (en) * 1984-03-22 1986-12-09 Thomson Components-Mostek Corporation Automatic assembly of integrated circuits
US20050045914A1 (en) * 2003-07-09 2005-03-03 Newport Corporation Flip chip device assembly machine
CN101334447A (zh) * 2007-05-31 2008-12-31 未来产业 处理机、及其测试托盘转送方法和封装芯片制造方法
US20100047962A1 (en) * 2008-08-19 2010-02-25 Silverbrook Research Pty Ltd Multi-chip printhead assembler
US20100105172A1 (en) * 2008-10-27 2010-04-29 Ming Li Direct die attach utilizing heated bond head

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4627151A (en) * 1984-03-22 1986-12-09 Thomson Components-Mostek Corporation Automatic assembly of integrated circuits
US20050045914A1 (en) * 2003-07-09 2005-03-03 Newport Corporation Flip chip device assembly machine
CN101334447A (zh) * 2007-05-31 2008-12-31 未来产业 处理机、及其测试托盘转送方法和封装芯片制造方法
US20100047962A1 (en) * 2008-08-19 2010-02-25 Silverbrook Research Pty Ltd Multi-chip printhead assembler
US20100105172A1 (en) * 2008-10-27 2010-04-29 Ming Li Direct die attach utilizing heated bond head

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113299577A (zh) * 2020-02-21 2021-08-24 均华精密工业股份有限公司 粘晶机
CN114883223A (zh) * 2022-05-23 2022-08-09 江苏新智达新能源设备有限公司 一种半导体共晶焊的封装装置
CN114883223B (zh) * 2022-05-23 2023-09-05 江苏新智达新能源设备有限公司 一种半导体共晶焊的封装装置

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