CN103728832B - 电子器件、光掩模以及显示装置的制造方法 - Google Patents

电子器件、光掩模以及显示装置的制造方法 Download PDF

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Publication number
CN103728832B
CN103728832B CN201310475805.7A CN201310475805A CN103728832B CN 103728832 B CN103728832 B CN 103728832B CN 201310475805 A CN201310475805 A CN 201310475805A CN 103728832 B CN103728832 B CN 103728832B
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China
Prior art keywords
pattern
photomask
film
transfer
resist
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CN201310475805.7A
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Chinese (zh)
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CN103728832A (zh
Inventor
山口昇
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Hoya Corp
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Hoya Corp
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Priority to CN201610307797.9A priority Critical patent/CN105892226B/zh
Priority to CN201910348874.9A priority patent/CN110147029B/zh
Publication of CN103728832A publication Critical patent/CN103728832A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201310475805.7A 2012-10-12 2013-10-12 电子器件、光掩模以及显示装置的制造方法 Active CN103728832B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201610307797.9A CN105892226B (zh) 2012-10-12 2013-10-12 电子器件、光掩模和显示装置的制造方法
CN201910348874.9A CN110147029B (zh) 2012-10-12 2013-10-12 光掩模和光掩模的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012227309A JP6157832B2 (ja) 2012-10-12 2012-10-12 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
JP2012-227309 2012-10-12

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CN201910348874.9A Division CN110147029B (zh) 2012-10-12 2013-10-12 光掩模和光掩模的制造方法
CN201610307797.9A Division CN105892226B (zh) 2012-10-12 2013-10-12 电子器件、光掩模和显示装置的制造方法

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CN103728832A CN103728832A (zh) 2014-04-16
CN103728832B true CN103728832B (zh) 2017-07-14

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CN201310475805.7A Active CN103728832B (zh) 2012-10-12 2013-10-12 电子器件、光掩模以及显示装置的制造方法
CN201610307797.9A Active CN105892226B (zh) 2012-10-12 2013-10-12 电子器件、光掩模和显示装置的制造方法
CN201910348874.9A Active CN110147029B (zh) 2012-10-12 2013-10-12 光掩模和光掩模的制造方法

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CN201610307797.9A Active CN105892226B (zh) 2012-10-12 2013-10-12 电子器件、光掩模和显示装置的制造方法
CN201910348874.9A Active CN110147029B (zh) 2012-10-12 2013-10-12 光掩模和光掩模的制造方法

Country Status (4)

Country Link
JP (1) JP6157832B2 (enExample)
KR (1) KR101560452B1 (enExample)
CN (3) CN103728832B (enExample)
TW (1) TWI512391B (enExample)

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* Cited by examiner, † Cited by third party
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JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法
JP6718225B2 (ja) * 2015-12-02 2020-07-08 株式会社エスケーエレクトロニクス フォトマスクおよびその製造方法
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
TW201823855A (zh) * 2016-09-21 2018-07-01 日商Ｈｏｙａ股份有限公司 光罩之製造方法、光罩、及顯示裝置之製造方法
KR101918380B1 (ko) 2017-01-06 2018-11-13 가부시키가이샤 에스케이 일렉트로닉스 얼라이먼트 패턴을 갖는 포토 마스크 블랭크 및 이를 이용한 포토 마스크 및 그 제조 방법
JP6744955B2 (ja) * 2019-06-19 2020-08-19 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP7261709B2 (ja) * 2019-09-13 2023-04-20 Hoya株式会社 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法
CN112526818B (zh) * 2020-12-02 2024-12-20 北海惠科光电技术有限公司 半色调掩膜版和薄膜晶体管阵列基板制造方法

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CN101546117A (zh) * 2008-03-27 2009-09-30 Hoya株式会社 多色调光掩模和使用该多色调光掩模的图案转印方法
CN101963753A (zh) * 2009-07-23 2011-02-02 Hoya株式会社 多色调光掩模、多色调光掩模的制造方法和图案转印方法
CN102262354A (zh) * 2010-05-24 2011-11-30 Hoya株式会社 多色调光掩模的制造方法和图案转印方法

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JP2001083688A (ja) * 1999-07-13 2001-03-30 Matsushita Electronics Industry Corp フォトマスク、レジストパターンの形成方法、アライメント精度計測方法及び半導体装置の製造方法
JP3586647B2 (ja) * 2000-12-26 2004-11-10 Ｈｏｙａ株式会社 グレートーンマスク及びその製造方法
KR100815679B1 (ko) * 2001-11-27 2008-03-20 호야 가부시키가이샤 하프톤형 위상 시프트 마스크 블랭크, 하프톤형 위상시프트 마스크 및 그 제조방법
US7160649B2 (en) * 2002-07-11 2007-01-09 Hitachi Via Mechanics, Ltd. Gray level imaging masks, optical imaging apparatus for gray level imaging masks and methods for encoding mask and use of the masks
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP4443873B2 (ja) * 2003-08-15 2010-03-31 Ｈｏｙａ株式会社 位相シフトマスクの製造方法
KR101018567B1 (ko) * 2004-06-22 2011-03-03 호야 가부시키가이샤 그레이 톤 마스크 블랭크, 그레이 톤 마스크 및 그 제조방법과 액정 표시 장치의 제조 방법
JP2006084507A (ja) 2004-09-14 2006-03-30 Matsushita Electric Ind Co Ltd 位相シフトマスク及び位相シフトマスクの製造方法
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JP2009229893A (ja) * 2008-03-24 2009-10-08 Hoya Corp 多階調フォトマスクの製造方法及びパターン転写方法
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JP2011081326A (ja) * 2009-10-10 2011-04-21 Hoya Corp 多階調フォトマスクの製造方法及び多階調フォトマスク用ブランク、並びに電子デバイスの製造方法
TWI502623B (zh) * 2010-01-07 2015-10-01 Hoya Corp 光罩之製造方法、光罩、及顯示裝置之製造方法
JP2012008545A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法

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CN101114119A (zh) * 2006-07-28 2008-01-30 三星电子株式会社 多色调光掩模及其制法和基于此的薄膜晶体管基底的制法
CN101546117A (zh) * 2008-03-27 2009-09-30 Hoya株式会社 多色调光掩模和使用该多色调光掩模的图案转印方法
CN101963753A (zh) * 2009-07-23 2011-02-02 Hoya株式会社 多色调光掩模、多色调光掩模的制造方法和图案转印方法
CN102262354A (zh) * 2010-05-24 2011-11-30 Hoya株式会社 多色调光掩模的制造方法和图案转印方法

Also Published As

Publication number Publication date
CN105892226A (zh) 2016-08-24
KR101560452B1 (ko) 2015-10-14
TWI512391B (zh) 2015-12-11
CN103728832A (zh) 2014-04-16
CN110147029A (zh) 2019-08-20
CN110147029B (zh) 2022-06-07
JP2014081409A (ja) 2014-05-08
KR20140047534A (ko) 2014-04-22
JP6157832B2 (ja) 2017-07-05
TW201415160A (zh) 2014-04-16
CN105892226B (zh) 2019-08-02

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