CN103717706B - 用于光致抗蚀剂冲洗剂溶液的全氟烷基磺酰胺表面活性剂 - Google Patents

用于光致抗蚀剂冲洗剂溶液的全氟烷基磺酰胺表面活性剂 Download PDF

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Publication number
CN103717706B
CN103717706B CN201280038836.XA CN201280038836A CN103717706B CN 103717706 B CN103717706 B CN 103717706B CN 201280038836 A CN201280038836 A CN 201280038836A CN 103717706 B CN103717706 B CN 103717706B
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China
Prior art keywords
solution
surfactant solution
photoresist
ionic surfactant
aqueous
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Chinese (zh)
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CN103717706A (zh
Inventor
J·M·科伦
P·M·萨伍
M·J·皮诺
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
CN201280038836.XA 2011-08-10 2012-08-01 用于光致抗蚀剂冲洗剂溶液的全氟烷基磺酰胺表面活性剂 Active CN103717706B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161522057P 2011-08-10 2011-08-10
US61/522,057 2011-08-10
PCT/US2012/049158 WO2013022673A2 (en) 2011-08-10 2012-08-01 Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions

Publications (2)

Publication Number Publication Date
CN103717706A CN103717706A (zh) 2014-04-09
CN103717706B true CN103717706B (zh) 2015-09-23

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CN201280038836.XA Active CN103717706B (zh) 2011-08-10 2012-08-01 用于光致抗蚀剂冲洗剂溶液的全氟烷基磺酰胺表面活性剂

Country Status (7)

Country Link
US (1) US9551936B2 (enExample)
EP (1) EP2742523B1 (enExample)
JP (1) JP6101693B2 (enExample)
KR (1) KR102000800B1 (enExample)
CN (1) CN103717706B (enExample)
TW (1) TWI542951B (enExample)
WO (1) WO2013022673A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2951217B1 (en) * 2013-01-29 2017-08-16 3M Innovative Properties Company Surfactants and methods of making and using same
KR101530606B1 (ko) * 2014-03-18 2015-07-01 주식회사 스노젠 인산 및 황산계 과불소화알킬 에스테르 계면 활성제와 이를 함유하는 크롬 식각액 및 저온 공정용 소핑제
CN106715485B (zh) 2014-09-11 2019-11-12 3M创新有限公司 包含氟化表面活性剂的组合物
JP7039865B2 (ja) * 2017-05-26 2022-03-23 大日本印刷株式会社 パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム
JP7349985B2 (ja) 2017-11-28 2023-09-25 ビーエーエスエフ ソシエタス・ヨーロピア 製品を洗浄するまたはすすぐための、第一の界面活性剤および第二の界面活性剤を含む組成物
US11762297B2 (en) * 2019-04-09 2023-09-19 Tokyo Electron Limited Point-of-use blending of rinse solutions to mitigate pattern collapse
CN114788527B (zh) * 2022-05-10 2024-03-01 广西产研院生物制造技术研究所有限公司 一种碘酸混合溶液消毒剂、制备方法及其在生猪圈舍消毒中的应用

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
US2567011A (en) 1949-01-10 1951-09-04 Minnesota Mining & Mfg Fluorocarbon acids and derivatives
DE2024909B2 (de) 1970-05-22 1977-09-29 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von n-hydroxyalkyl-perfluoralkansulfonamiden und einige n,n-bis-(hydroxyalkyl)-perfluor-alkansulfonamide
US4089804A (en) 1976-12-30 1978-05-16 Ciba-Geigy Corporation Method of improving fluorinated surfactants
DE2921142A1 (de) 1979-05-25 1980-12-11 Bayer Ag Verwendung von perfluoralkansulfonamid- salzen als tenside
JP3217116B2 (ja) 1992-03-06 2001-10-09 日産化学工業株式会社 低表面張力洗浄用組成物
DE60021459T2 (de) * 1999-03-25 2006-04-20 Dainippon Ink And Chemicals, Inc. Flachdruckplatte und Bebilderungsverfahren
JP4075275B2 (ja) * 1999-03-25 2008-04-16 大日本インキ化学工業株式会社 感光性組成物、印刷版原版及び画像形成方法
US20040029395A1 (en) * 2002-08-12 2004-02-12 Peng Zhang Process solutions containing acetylenic diol surfactants
JP4855616B2 (ja) * 1999-10-27 2012-01-18 スリーエム イノベイティブ プロパティズ カンパニー フルオロケミカルスルホンアミド界面活性剤
US7169323B2 (en) * 2002-11-08 2007-01-30 3M Innovative Properties Company Fluorinated surfactants for buffered acid etch solutions
US6890452B2 (en) 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
JP4493393B2 (ja) 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
JP4767829B2 (ja) 2006-01-11 2011-09-07 東京応化工業株式会社 リソグラフィー用洗浄剤及びそれを用いたレジストパターン形成方法
JP2007219009A (ja) 2006-02-14 2007-08-30 Az Electronic Materials Kk レジスト基板用処理液とそれを用いたレジスト基板の処理方法
US20080299487A1 (en) * 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
US20080280230A1 (en) 2007-05-10 2008-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process including a chemical rinse
JP5089422B2 (ja) * 2008-02-15 2012-12-05 岡本化学工業株式会社 感光性組成物およびそれを用いた平版印刷版用原版
WO2010074878A1 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Aqueous composition containing fluorinated sulfonamide and sulfonamidate compounds
WO2010074877A1 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Method of making a composition and aqueous composition preparable thereby
JP5624753B2 (ja) 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法

Also Published As

Publication number Publication date
EP2742523A2 (en) 2014-06-18
KR102000800B1 (ko) 2019-07-16
US20140154632A1 (en) 2014-06-05
WO2013022673A3 (en) 2013-06-06
EP2742523B1 (en) 2020-09-23
CN103717706A (zh) 2014-04-09
WO2013022673A2 (en) 2013-02-14
JP2014527200A (ja) 2014-10-09
TW201314373A (zh) 2013-04-01
US9551936B2 (en) 2017-01-24
EP2742523A4 (en) 2015-01-21
TWI542951B (zh) 2016-07-21
KR20140052010A (ko) 2014-05-02
JP6101693B2 (ja) 2017-03-22

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