TWI542951B - 用於光阻淋洗溶液之全氟烷基磺醯胺界面活性劑 - Google Patents

用於光阻淋洗溶液之全氟烷基磺醯胺界面活性劑 Download PDF

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Publication number
TWI542951B
TWI542951B TW101128804A TW101128804A TWI542951B TW I542951 B TWI542951 B TW I542951B TW 101128804 A TW101128804 A TW 101128804A TW 101128804 A TW101128804 A TW 101128804A TW I542951 B TWI542951 B TW I542951B
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TW
Taiwan
Prior art keywords
solution
photoresist
photoresist material
aqueous
ionic surfactant
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TW101128804A
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English (en)
Chinese (zh)
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TW201314373A (zh
Inventor
傑森 麥克 奇瑞恩
派翠西亞 瑪莉 沙維
馬修 詹姆士 皮諾
Original Assignee
３Ｍ新設資產公司
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Publication of TW201314373A publication Critical patent/TW201314373A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
TW101128804A 2011-08-10 2012-08-09 用於光阻淋洗溶液之全氟烷基磺醯胺界面活性劑 TWI542951B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161522057P 2011-08-10 2011-08-10

Publications (2)

Publication Number Publication Date
TW201314373A TW201314373A (zh) 2013-04-01
TWI542951B true TWI542951B (zh) 2016-07-21

Family

ID=47669161

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101128804A TWI542951B (zh) 2011-08-10 2012-08-09 用於光阻淋洗溶液之全氟烷基磺醯胺界面活性劑

Country Status (7)

Country Link
US (1) US9551936B2 (enExample)
EP (1) EP2742523B1 (enExample)
JP (1) JP6101693B2 (enExample)
KR (1) KR102000800B1 (enExample)
CN (1) CN103717706B (enExample)
TW (1) TWI542951B (enExample)
WO (1) WO2013022673A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102171621B1 (ko) 2013-01-29 2020-10-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 계면활성제, 그의 제조 방법 및 사용 방법
KR101530606B1 (ko) * 2014-03-18 2015-07-01 주식회사 스노젠 인산 및 황산계 과불소화알킬 에스테르 계면 활성제와 이를 함유하는 크롬 식각액 및 저온 공정용 소핑제
KR102462889B1 (ko) 2014-09-11 2022-11-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 플루오르화 계면활성제를 함유하는 조성물
JP7039865B2 (ja) * 2017-05-26 2022-03-23 大日本印刷株式会社 パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム
CN111386332B (zh) 2017-11-28 2025-05-23 巴斯夫欧洲公司 用于清洁或清洗产品的包含一级和二级表面活性剂的组合物
US11762297B2 (en) * 2019-04-09 2023-09-19 Tokyo Electron Limited Point-of-use blending of rinse solutions to mitigate pattern collapse
CN114788527B (zh) * 2022-05-10 2024-03-01 广西产研院生物制造技术研究所有限公司 一种碘酸混合溶液消毒剂、制备方法及其在生猪圈舍消毒中的应用

Family Cites Families (20)

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US2567011A (en) 1949-01-10 1951-09-04 Minnesota Mining & Mfg Fluorocarbon acids and derivatives
DE2024909B2 (de) 1970-05-22 1977-09-29 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von n-hydroxyalkyl-perfluoralkansulfonamiden und einige n,n-bis-(hydroxyalkyl)-perfluor-alkansulfonamide
US4089804A (en) 1976-12-30 1978-05-16 Ciba-Geigy Corporation Method of improving fluorinated surfactants
DE2921142A1 (de) 1979-05-25 1980-12-11 Bayer Ag Verwendung von perfluoralkansulfonamid- salzen als tenside
JP3217116B2 (ja) * 1992-03-06 2001-10-09 日産化学工業株式会社 低表面張力洗浄用組成物
JP4075275B2 (ja) * 1999-03-25 2008-04-16 大日本インキ化学工業株式会社 感光性組成物、印刷版原版及び画像形成方法
DE60021459T2 (de) * 1999-03-25 2006-04-20 Dainippon Ink And Chemicals, Inc. Flachdruckplatte und Bebilderungsverfahren
US20040029395A1 (en) * 2002-08-12 2004-02-12 Peng Zhang Process solutions containing acetylenic diol surfactants
WO2001030873A1 (en) 1999-10-27 2001-05-03 3M Innovative Properties Company Fluorochemical sulfonamide surfactants
US7169323B2 (en) * 2002-11-08 2007-01-30 3M Innovative Properties Company Fluorinated surfactants for buffered acid etch solutions
US6890452B2 (en) 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
JP4493393B2 (ja) 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
JP4767829B2 (ja) * 2006-01-11 2011-09-07 東京応化工業株式会社 リソグラフィー用洗浄剤及びそれを用いたレジストパターン形成方法
JP2007219009A (ja) * 2006-02-14 2007-08-30 Az Electronic Materials Kk レジスト基板用処理液とそれを用いたレジスト基板の処理方法
US20080299487A1 (en) * 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
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JP5089422B2 (ja) * 2008-02-15 2012-12-05 岡本化学工業株式会社 感光性組成物およびそれを用いた平版印刷版用原版
US20100155657A1 (en) 2008-12-23 2010-06-24 3M Innovative Properties Company Aqueous composition containing fluorinated sulfonamide and sulfonamidate compounds
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JP5624753B2 (ja) * 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法

Also Published As

Publication number Publication date
US20140154632A1 (en) 2014-06-05
WO2013022673A3 (en) 2013-06-06
KR102000800B1 (ko) 2019-07-16
CN103717706A (zh) 2014-04-09
WO2013022673A2 (en) 2013-02-14
TW201314373A (zh) 2013-04-01
EP2742523A2 (en) 2014-06-18
EP2742523A4 (en) 2015-01-21
EP2742523B1 (en) 2020-09-23
JP6101693B2 (ja) 2017-03-22
CN103717706B (zh) 2015-09-23
KR20140052010A (ko) 2014-05-02
US9551936B2 (en) 2017-01-24
JP2014527200A (ja) 2014-10-09

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