CN103715175B - 半导体器件、半导体器件制造方法以及固体摄像装置 - Google Patents

半导体器件、半导体器件制造方法以及固体摄像装置 Download PDF

Info

Publication number
CN103715175B
CN103715175B CN201310429001.3A CN201310429001A CN103715175B CN 103715175 B CN103715175 B CN 103715175B CN 201310429001 A CN201310429001 A CN 201310429001A CN 103715175 B CN103715175 B CN 103715175B
Authority
CN
China
Prior art keywords
electrode
semiconductor
layer
element layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310429001.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN103715175A (zh
Inventor
横山孝司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to CN201710447901.9A priority Critical patent/CN107275354B/zh
Publication of CN103715175A publication Critical patent/CN103715175A/zh
Application granted granted Critical
Publication of CN103715175B publication Critical patent/CN103715175B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/8034—Bonding interfaces of the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/8034—Bonding interfaces of the bonding area
    • H01L2224/80357—Bonding interfaces of the bonding area being flush with the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
    • H01L2224/80895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
    • H01L2224/80896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/953—Detector using nanostructure
    • Y10S977/954—Of radiant energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201310429001.3A 2012-09-28 2013-09-18 半导体器件、半导体器件制造方法以及固体摄像装置 Expired - Fee Related CN103715175B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710447901.9A CN107275354B (zh) 2012-09-28 2013-09-18 半导体器件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-218000 2012-09-28
JP2012218000A JP6074985B2 (ja) 2012-09-28 2012-09-28 半導体装置、固体撮像装置、および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710447901.9A Division CN107275354B (zh) 2012-09-28 2013-09-18 半导体器件

Publications (2)

Publication Number Publication Date
CN103715175A CN103715175A (zh) 2014-04-09
CN103715175B true CN103715175B (zh) 2017-06-09

Family

ID=50384336

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201310429001.3A Expired - Fee Related CN103715175B (zh) 2012-09-28 2013-09-18 半导体器件、半导体器件制造方法以及固体摄像装置
CN201710447901.9A Expired - Fee Related CN107275354B (zh) 2012-09-28 2013-09-18 半导体器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201710447901.9A Expired - Fee Related CN107275354B (zh) 2012-09-28 2013-09-18 半导体器件

Country Status (3)

Country Link
US (6) US9093575B2 (enExample)
JP (1) JP6074985B2 (enExample)
CN (2) CN103715175B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6074985B2 (ja) 2012-09-28 2017-02-08 ソニー株式会社 半導体装置、固体撮像装置、および半導体装置の製造方法
JP2014194976A (ja) * 2013-03-28 2014-10-09 Nippon Hoso Kyokai <Nhk> 設計装置、設計方法及びプログラム
KR101729378B1 (ko) * 2014-05-30 2017-04-21 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스 및 반도체 디바이스 제조 방법
WO2016025451A1 (en) * 2014-08-11 2016-02-18 Massachusetts Institute Of Technology Interconnect structures for assembly of multi-layer semiconductor devices
WO2016185883A1 (ja) * 2015-05-18 2016-11-24 ソニー株式会社 半導体装置および撮像装置
WO2017038403A1 (ja) * 2015-09-01 2017-03-09 ソニー株式会社 積層体
US10020336B2 (en) 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
EP3439039B1 (en) * 2016-03-31 2023-08-02 Nikon Corporation Imaging element and imaging device
US10277227B2 (en) * 2016-05-31 2019-04-30 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device layout
JP2018101699A (ja) 2016-12-20 2018-06-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
WO2018150830A1 (en) * 2017-02-17 2018-08-23 Canon Kabushiki Kaisha Liquid discharge head substrate, method of manufacturing the same, liquid discharge head, and liquid discharge apparatus
JP2019160833A (ja) 2018-03-07 2019-09-19 東芝メモリ株式会社 半導体装置
JP7221286B2 (ja) * 2018-06-21 2023-02-13 株式会社半導体エネルギー研究所 撮像装置及びその動作方法、並びに電子機器
JP7186540B2 (ja) * 2018-08-06 2022-12-09 キヤノン株式会社 液体吐出ヘッド用基板、液体吐出ヘッド、および、液体吐出装置
US11437376B2 (en) * 2019-05-31 2022-09-06 Tokyo Electron Limited Compact 3D stacked-CFET architecture for complex logic cells
WO2021001719A1 (ja) 2019-07-04 2021-01-07 株式会社半導体エネルギー研究所 撮像装置および電子機器
CN115136312A (zh) * 2020-03-17 2022-09-30 索尼半导体解决方案公司 成像装置和电子设备
JP2023016007A (ja) 2021-07-20 2023-02-01 株式会社半導体エネルギー研究所 表示装置および電子装置
CN114093973B (zh) * 2021-10-15 2024-09-06 华南理工大学 一种火焰修饰碳纳米管/氧化镍/砷化镓太阳电池及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939568A (en) * 1986-03-20 1990-07-03 Fujitsu Limited Three-dimensional integrated circuit and manufacturing method thereof
US20100055805A1 (en) * 2008-08-28 2010-03-04 Fujitsu Microelectronics Limited Semiconductor device manufacturing method
US20120018729A1 (en) * 2003-03-14 2012-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102668098A (zh) * 2009-12-28 2012-09-12 株式会社半导体能源研究所 制造半导体装置的方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130059A (ja) * 1984-07-20 1986-02-12 Nec Corp 半導体装置の製造方法
JP2879894B2 (ja) * 1996-10-08 1999-04-05 川崎製鉄株式会社 アンチフューズ素子を具備した半導体集積回路装置及びその製造方法
US6489952B1 (en) * 1998-11-17 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Active matrix type semiconductor display device
JP2003060056A (ja) * 2001-08-10 2003-02-28 Seiko Epson Corp 半導体集積回路の製造方法及びレチクル及び半導体集積回路装置
JP2005056985A (ja) * 2003-08-01 2005-03-03 Seiko Epson Corp 半導体装置の製造方法、半導体装置および電子機器
US7868957B2 (en) * 2003-12-02 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device and liquid crystal display device and method for manufacturing the same
JP2005268662A (ja) 2004-03-19 2005-09-29 Seiko Epson Corp ３次元デバイスの製造方法
US20060292823A1 (en) * 2005-06-28 2006-12-28 Shriram Ramanathan Method and apparatus for bonding wafers
US20070145367A1 (en) * 2005-12-27 2007-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional integrated circuit structure
JP5512102B2 (ja) * 2007-08-24 2014-06-04 本田技研工業株式会社 半導体装置
US8044464B2 (en) * 2007-09-21 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7872357B2 (en) * 2008-03-05 2011-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Protection for bonding pads and methods of formation
WO2010109746A1 (ja) * 2009-03-27 2010-09-30 パナソニック株式会社 半導体装置及びその製造方法
WO2011065183A1 (en) * 2009-11-24 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
US8759166B2 (en) * 2009-12-14 2014-06-24 Sharp Kabushiki Kaisha Method for manufacturing thin film transistor device
CN102668081B (zh) * 2009-12-26 2016-02-03 佳能株式会社 固态图像拾取装置和图像拾取系统
US8859390B2 (en) * 2010-02-05 2014-10-14 International Business Machines Corporation Structure and method for making crack stop for 3D integrated circuits
JP2011210744A (ja) * 2010-03-26 2011-10-20 Toshiba Corp 半導体装置及びその製造方法
US9329443B2 (en) * 2010-03-29 2016-05-03 Seiko Epson Corporation Liquid crystal display device having first and second dielectric films with different thicknesses
JP5651986B2 (ja) * 2010-04-02 2015-01-14 ソニー株式会社 固体撮像装置とその製造方法、並びに電子機器及びカメラモジュール
JP2012054321A (ja) * 2010-08-31 2012-03-15 Sony Corp 固体撮像素子及びその製造方法、並びに固体撮像装置及び撮像装置
JP2012064657A (ja) * 2010-09-14 2012-03-29 Toshiba Corp 半導体装置
US8921976B2 (en) * 2011-01-25 2014-12-30 Stmicroelectronics, Inc. Using backside passive elements for multilevel 3D wafers alignment applications
JP5291746B2 (ja) 2011-03-22 2013-09-18 株式会社荏原製作所 研磨装置
JP6074985B2 (ja) * 2012-09-28 2017-02-08 ソニー株式会社 半導体装置、固体撮像装置、および半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939568A (en) * 1986-03-20 1990-07-03 Fujitsu Limited Three-dimensional integrated circuit and manufacturing method thereof
US20120018729A1 (en) * 2003-03-14 2012-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100055805A1 (en) * 2008-08-28 2010-03-04 Fujitsu Microelectronics Limited Semiconductor device manufacturing method
CN102668098A (zh) * 2009-12-28 2012-09-12 株式会社半导体能源研究所 制造半导体装置的方法

Also Published As

Publication number Publication date
US9577005B2 (en) 2017-02-21
US20170125475A1 (en) 2017-05-04
US9093575B2 (en) 2015-07-28
US10930697B2 (en) 2021-02-23
CN107275354B (zh) 2020-11-17
US20190280035A9 (en) 2019-09-12
US20150287754A1 (en) 2015-10-08
US20200227463A1 (en) 2020-07-16
CN107275354A (zh) 2017-10-20
US20140091321A1 (en) 2014-04-03
US10615214B2 (en) 2020-04-07
JP2014072418A (ja) 2014-04-21
US20190035841A1 (en) 2019-01-31
US20180204871A1 (en) 2018-07-19
JP6074985B2 (ja) 2017-02-08
US10319775B2 (en) 2019-06-11
CN103715175A (zh) 2014-04-09
US9947710B2 (en) 2018-04-17

Similar Documents

Publication Publication Date Title
CN103715175B (zh) 半导体器件、半导体器件制造方法以及固体摄像装置
US20200152685A1 (en) Semiconductor Device and Method of Manufacturing the Same, and Electronic Apparatus
KR102158394B1 (ko) 반도체 장치 및 제조 방법
CN104009054B (zh) 半导体装置、其制造方法以及电子设备
US11908879B2 (en) Semiconductor device
TW201246520A (en) Semiconductor device, manufacturing method thereof, and electronic apparatus
JP2018170471A (ja) 半導体装置および機器
CN113711338A (zh) 摄像装置
US8476699B2 (en) Method for producing semiconductor device and semiconductor device
JP7565814B2 (ja) 積層型半導体装置及びその製造方法
CN121057328A (zh) 层叠型图像感测装置及其制造方法
JP2011210908A (ja) Ｃｃｄ型固体撮像素子及びその製造方法並びに撮像装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170609