CN103703088B - 化学相似衬底的暂时粘合 - Google Patents
化学相似衬底的暂时粘合 Download PDFInfo
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- CN103703088B CN103703088B CN201280036421.9A CN201280036421A CN103703088B CN 103703088 B CN103703088 B CN 103703088B CN 201280036421 A CN201280036421 A CN 201280036421A CN 103703088 B CN103703088 B CN 103703088B
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- 239000000758 substrate Substances 0.000 title abstract description 59
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 135
- 239000000203 mixture Substances 0.000 claims abstract description 72
- 230000003750 conditioning effect Effects 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 16
- 238000007711 solidification Methods 0.000 claims abstract description 14
- 230000008023 solidification Effects 0.000 claims abstract description 14
- -1 fatty acid ester Chemical class 0.000 claims description 59
- 239000002253 acid Substances 0.000 claims description 34
- 238000004132 cross linking Methods 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 12
- 238000009833 condensation Methods 0.000 claims description 10
- 230000005494 condensation Effects 0.000 claims description 10
- 150000002632 lipids Chemical class 0.000 claims description 7
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 6
- 239000000194 fatty acid Substances 0.000 claims description 6
- 229930195729 fatty acid Natural products 0.000 claims description 6
- 230000000717 retained effect Effects 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 description 38
- 235000012431 wafers Nutrition 0.000 description 33
- 239000000945 filler Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 17
- 150000001875 compounds Chemical class 0.000 description 16
- 229910000077 silane Inorganic materials 0.000 description 16
- 239000004205 dimethyl polysiloxane Substances 0.000 description 15
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 15
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000011230 binding agent Substances 0.000 description 12
- 229920001577 copolymer Polymers 0.000 description 12
- 239000003054 catalyst Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000003112 inhibitor Substances 0.000 description 10
- 239000000654 additive Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 229910052697 platinum Inorganic materials 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 7
- 238000000227 grinding Methods 0.000 description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 241000894007 species Species 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000000413 hydrolysate Substances 0.000 description 6
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 5
- 229920006037 cross link polymer Polymers 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000036961 partial effect Effects 0.000 description 5
- 238000002203 pretreatment Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 239000012763 reinforcing filler Substances 0.000 description 4
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 4
- 229960001866 silicon dioxide Drugs 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 4
- 229920001169 thermoplastic Polymers 0.000 description 4
- 239000004416 thermosoftening plastic Substances 0.000 description 4
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 4
- CUXYLFPMQMFGPL-BGDVVUGTSA-N (9Z,11E,13Z)-octadecatrienoic acid Chemical compound CCCC\C=C/C=C/C=C\CCCCCCCC(O)=O CUXYLFPMQMFGPL-BGDVVUGTSA-N 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 3
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 239000004902 Softening Agent Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000001311 chemical methods and process Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 3
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 3
- ZQPPMHVWECSIRJ-MDZDMXLPSA-N elaidic acid Chemical compound CCCCCCCC\C=C\CCCCCCCC(O)=O ZQPPMHVWECSIRJ-MDZDMXLPSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 3
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 3
- 238000006459 hydrosilylation reaction Methods 0.000 description 3
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 3
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 3
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- TUNFSRHWOTWDNC-UHFFFAOYSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001335 Galvanized steel Inorganic materials 0.000 description 2
- 235000021353 Lignoceric acid Nutrition 0.000 description 2
- CQXMAMUUWHYSIY-UHFFFAOYSA-N Lignoceric acid Natural products CCCCCCCCCCCCCCCCCCCCCCCC(=O)OCCC1=CC=C(O)C=C1 CQXMAMUUWHYSIY-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- YZXBAPSDXZZRGB-DOFZRALJSA-N arachidonic acid Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O YZXBAPSDXZZRGB-DOFZRALJSA-N 0.000 description 2
- 239000001506 calcium phosphate Substances 0.000 description 2
- 229910000389 calcium phosphate Inorganic materials 0.000 description 2
- 235000011010 calcium phosphates Nutrition 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- DIXBSCZRIZDQGC-UHFFFAOYSA-N diaziridine Chemical compound C1NN1 DIXBSCZRIZDQGC-UHFFFAOYSA-N 0.000 description 2
- YFCVAZGXPLMNDG-UHFFFAOYSA-N dimethyl-bis[[methyl(diphenyl)silyl]oxy]silane Chemical class C=1C=CC=CC=1[Si](C)(C=1C=CC=CC=1)O[Si](C)(C)O[Si](C)(C=1C=CC=CC=1)C1=CC=CC=C1 YFCVAZGXPLMNDG-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 230000006353 environmental stress Effects 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
- FARYTWBWLZAXNK-WAYWQWQTSA-N ethyl (z)-3-(methylamino)but-2-enoate Chemical compound CCOC(=O)\C=C(\C)NC FARYTWBWLZAXNK-WAYWQWQTSA-N 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000008397 galvanized steel Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N pentadecanoic acid Chemical compound CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- CNVZJPUDSLNTQU-SEYXRHQNSA-N petroselinic acid Chemical compound CCCCCCCCCCC\C=C/CCCCC(O)=O CNVZJPUDSLNTQU-SEYXRHQNSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- IUTCEZPPWBHGIX-UHFFFAOYSA-N tin(2+) Chemical compound [Sn+2] IUTCEZPPWBHGIX-UHFFFAOYSA-N 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- VHOCUJPBKOZGJD-UHFFFAOYSA-N triacontanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O VHOCUJPBKOZGJD-UHFFFAOYSA-N 0.000 description 2
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- CUXYLFPMQMFGPL-UHFFFAOYSA-N (9Z,11E,13E)-9,11,13-Octadecatrienoic acid Natural products CCCCC=CC=CC=CCCCCCCCC(O)=O CUXYLFPMQMFGPL-UHFFFAOYSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- QXJSBBXBKPUZAA-CMDGGOBGSA-N (e)-octadec-10-enoic acid Chemical compound CCCCCCC\C=C\CCCCCCCCC(O)=O QXJSBBXBKPUZAA-CMDGGOBGSA-N 0.000 description 1
- KILURZWTCGSYRE-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]alumanyloxypent-3-en-2-one Chemical compound CC(=O)\C=C(\C)O[Al](O\C(C)=C/C(C)=O)O\C(C)=C/C(C)=O KILURZWTCGSYRE-LNTINUHCSA-K 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- FRPZMMHWLSIFAZ-UHFFFAOYSA-N 10-undecenoic acid Chemical compound OC(=O)CCCCCCCCC=C FRPZMMHWLSIFAZ-UHFFFAOYSA-N 0.000 description 1
- OXEDXHIBHVMDST-UHFFFAOYSA-N 12Z-octadecenoic acid Natural products CCCCCC=CCCCCCCCCCCC(O)=O OXEDXHIBHVMDST-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- LIZVXGBYTGTTTI-UHFFFAOYSA-N 2-[(4-methylphenyl)sulfonylamino]-2-phenylacetic acid Chemical compound C1=CC(C)=CC=C1S(=O)(=O)NC(C(O)=O)C1=CC=CC=C1 LIZVXGBYTGTTTI-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 1
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 description 1
- XDQWJFXZTAWJST-UHFFFAOYSA-N 3-triethoxysilylpropyl prop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C=C XDQWJFXZTAWJST-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- PIFPCDRPHCQLSJ-WYIJOVFWSA-N 4,8,12,15,19-Docosapentaenoic acid Chemical compound CC\C=C\CC\C=C\C\C=C\CC\C=C\CC\C=C\CCC(O)=O PIFPCDRPHCQLSJ-WYIJOVFWSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 235000021357 Behenic acid Nutrition 0.000 description 1
- DPUOLQHDNGRHBS-UHFFFAOYSA-N Brassidinsaeure Natural products CCCCCCCCC=CCCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-UHFFFAOYSA-N 0.000 description 1
- VBQICASFGLMAME-UHFFFAOYSA-N C=CC(C)=C.[O] Chemical compound C=CC(C)=C.[O] VBQICASFGLMAME-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- PIFPCDRPHCQLSJ-UHFFFAOYSA-N Clupanodonic acid Natural products CCC=CCCC=CCC=CCCC=CCCC=CCCC(O)=O PIFPCDRPHCQLSJ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001269238 Data Species 0.000 description 1
- IEPRKVQEAMIZSS-UHFFFAOYSA-N Di-Et ester-Fumaric acid Natural products CCOC(=O)C=CC(=O)OCC IEPRKVQEAMIZSS-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-WAYWQWQTSA-N Diethyl maleate Chemical compound CCOC(=O)\C=C/C(=O)OCC IEPRKVQEAMIZSS-WAYWQWQTSA-N 0.000 description 1
- URXZXNYJPAJJOQ-UHFFFAOYSA-N Erucic acid Natural products CCCCCCC=CCCCCCCCCCCCC(O)=O URXZXNYJPAJJOQ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Natural products OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 1
- IECPWNUMDGFDKC-UHFFFAOYSA-N Fusicsaeure Natural products C12C(O)CC3C(=C(CCC=C(C)C)C(O)=O)C(OC(C)=O)CC3(C)C1(C)CCC1C2(C)CCC(O)C1C IECPWNUMDGFDKC-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OWIKHYCFFJSOEH-UHFFFAOYSA-N Isocyanic acid Chemical compound N=C=O OWIKHYCFFJSOEH-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- PDNNQADNLPRFPG-UHFFFAOYSA-N N.[O] Chemical compound N.[O] PDNNQADNLPRFPG-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 239000005643 Pelargonic acid Substances 0.000 description 1
- CNVZJPUDSLNTQU-UHFFFAOYSA-N Petroselaidic acid Natural products CCCCCCCCCCCC=CCCCCC(O)=O CNVZJPUDSLNTQU-UHFFFAOYSA-N 0.000 description 1
- 239000005922 Phosphane Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 1
- HXWJFEZDFPRLBG-UHFFFAOYSA-N Timnodonic acid Natural products CCCC=CC=CCC=CCC=CCC=CCCCC(O)=O HXWJFEZDFPRLBG-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 1
- TUKNJUVZUHUEOX-UHFFFAOYSA-N [dimethyl(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silyl]oxy-dimethyl-(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](C)(C)O[Si](C)(C)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F TUKNJUVZUHUEOX-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-M acetoacetate Chemical compound CC(=O)CC([O-])=O WDJHALXBUFZDSR-UHFFFAOYSA-M 0.000 description 1
- RRUDCFGSUDOHDG-UHFFFAOYSA-N acetohydroxamic acid Chemical compound CC(O)=NO RRUDCFGSUDOHDG-UHFFFAOYSA-N 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- JAZBEHYOTPTENJ-JLNKQSITSA-N all-cis-5,8,11,14,17-icosapentaenoic acid Chemical compound CC\C=C/C\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O JAZBEHYOTPTENJ-JLNKQSITSA-N 0.000 description 1
- CUXYLFPMQMFGPL-SUTYWZMXSA-N all-trans-octadeca-9,11,13-trienoic acid Chemical compound CCCC\C=C\C=C\C=C\CCCCCCCC(O)=O CUXYLFPMQMFGPL-SUTYWZMXSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 159000000013 aluminium salts Chemical class 0.000 description 1
- 229910000329 aluminium sulfate Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical group 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-N anhydrous cyanic acid Natural products OC#N XLJMAIOERFSOGZ-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000021342 arachidonic acid Nutrition 0.000 description 1
- 229940114079 arachidonic acid Drugs 0.000 description 1
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229940116226 behenic acid Drugs 0.000 description 1
- 125000002511 behenyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- FSIJKGMIQTVTNP-UHFFFAOYSA-N bis(ethenyl)-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C=C)C=C FSIJKGMIQTVTNP-UHFFFAOYSA-N 0.000 description 1
- ZPOLOEWJWXZUSP-AATRIKPKSA-N bis(prop-2-enyl) (e)-but-2-enedioate Chemical compound C=CCOC(=O)\C=C\C(=O)OCC=C ZPOLOEWJWXZUSP-AATRIKPKSA-N 0.000 description 1
- ZPOLOEWJWXZUSP-WAYWQWQTSA-N bis(prop-2-enyl) (z)-but-2-enedioate Chemical compound C=CCOC(=O)\C=C/C(=O)OCC=C ZPOLOEWJWXZUSP-WAYWQWQTSA-N 0.000 description 1
- MFWYAJVOUCTAQI-UHFFFAOYSA-N bis[[ethenyl(dimethyl)silyl]oxy]-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C=C MFWYAJVOUCTAQI-UHFFFAOYSA-N 0.000 description 1
- NPNZYNKHFZFEBR-UHFFFAOYSA-N bis[[ethenyl(dimethyl)silyl]oxy]-methyl-(3,3,3-trifluoropropyl)silane Chemical compound C=C[Si](C)(C)O[Si](C)(CCC(F)(F)F)O[Si](C)(C)C=C NPNZYNKHFZFEBR-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229930188620 butyrolactone Natural products 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 159000000007 calcium salts Chemical class 0.000 description 1
- KHAVLLBUVKBTBG-UHFFFAOYSA-N caproleic acid Natural products OC(=O)CCCCCCCC=C KHAVLLBUVKBTBG-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 125000003901 ceryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- YQHLDYVWEZKEOX-UHFFFAOYSA-N cumene hydroperoxide Chemical compound OOC(C)(C)C1=CC=CC=C1 YQHLDYVWEZKEOX-UHFFFAOYSA-N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- HPBHEIQGPWTWPS-UHFFFAOYSA-N diethoxy-ethyl-(7-oxabicyclo[4.1.0]heptan-6-yl)silane Chemical compound C1CCCC2OC21[Si](CC)(OCC)OCC HPBHEIQGPWTWPS-UHFFFAOYSA-N 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- LDCRTTXIJACKKU-ARJAWSKDSA-N dimethyl maleate Chemical compound COC(=O)\C=C/C(=O)OC LDCRTTXIJACKKU-ARJAWSKDSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 235000020673 eicosapentaenoic acid Nutrition 0.000 description 1
- 229960005135 eicosapentaenoic acid Drugs 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000007786 electrostatic charging Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- DPUOLQHDNGRHBS-KTKRTIGZSA-N erucic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-KTKRTIGZSA-N 0.000 description 1
- HIHIPCDUFKZOSL-UHFFFAOYSA-N ethenyl(methyl)silicon Chemical compound C[Si]C=C HIHIPCDUFKZOSL-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical group CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- DFMSLVWGNLNJOG-UHFFFAOYSA-N ethyl-dimethoxy-(7-oxabicyclo[4.1.0]heptan-6-yl)silane Chemical compound C1CCCC2OC21[Si](OC)(OC)CC DFMSLVWGNLNJOG-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- IECPWNUMDGFDKC-MZJAQBGESA-N fusidic acid Chemical compound O[C@@H]([C@@H]12)C[C@H]3\C(=C(/CCC=C(C)C)C(O)=O)[C@@H](OC(C)=O)C[C@]3(C)[C@@]2(C)CC[C@@H]2[C@]1(C)CC[C@@H](O)[C@H]2C IECPWNUMDGFDKC-MZJAQBGESA-N 0.000 description 1
- 229960004675 fusidic acid Drugs 0.000 description 1
- VZCCETWTMQHEPK-UHFFFAOYSA-N gamma-Linolensaeure Natural products CCCCCC=CCC=CCC=CCCCCC(O)=O VZCCETWTMQHEPK-UHFFFAOYSA-N 0.000 description 1
- VZCCETWTMQHEPK-QNEBEIHSSA-N gamma-linolenic acid Chemical compound CCCCC\C=C/C\C=C/C\C=C/CCCCC(O)=O VZCCETWTMQHEPK-QNEBEIHSSA-N 0.000 description 1
- 235000020664 gamma-linolenic acid Nutrition 0.000 description 1
- 229960002733 gamolenic acid Drugs 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XWHJQTQOUDOZGR-UHFFFAOYSA-N hex-1-enyl(trimethoxy)silane Chemical compound CCCCC=C[Si](OC)(OC)OC XWHJQTQOUDOZGR-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 150000002432 hydroperoxides Chemical class 0.000 description 1
- PQPVPZTVJLXQAS-UHFFFAOYSA-N hydroxy-methyl-phenylsilicon Chemical compound C[Si](O)C1=CC=CC=C1 PQPVPZTVJLXQAS-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 125000002463 lignoceryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229960004232 linoleic acid Drugs 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- CUMCLKHSZZGALD-UHFFFAOYSA-N methyl-oxo-(3,3,3-trifluoropropyl)silane Chemical compound C[Si](=O)CCC(F)(F)F CUMCLKHSZZGALD-UHFFFAOYSA-N 0.000 description 1
- 230000001617 migratory effect Effects 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 125000002819 montanyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001802 myricyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- YWWVWXASSLXJHU-WAYWQWQTSA-N myristoleic acid group Chemical class C(CCCCCCC\C=C/CCCC)(=O)O YWWVWXASSLXJHU-WAYWQWQTSA-N 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000021290 n-3 DPA Nutrition 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000001196 nonadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- ONTCPNMXIFJGRE-KOZLPYOZSA-N octadeca-9,11,13-trienoic acid;(9z,11e,13e)-octadeca-9,11,13-trienoic acid Chemical compound CCCCC=CC=CC=CCCCCCCCC(O)=O.CCCC\C=C\C=C\C=C/CCCCCCCC(O)=O ONTCPNMXIFJGRE-KOZLPYOZSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- AHBPBADERZDJKT-UHFFFAOYSA-N pentane-2,3-dione zirconium Chemical compound [Zr].C(C)C(=O)C(=O)C AHBPBADERZDJKT-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229910000064 phosphane Inorganic materials 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000006069 physical mixture Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000438 poly[methyl(3,3,3-trifluoropropyl)siloxane] polymer Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920005594 polymer fiber Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- AXLMPTNTPOWPLT-UHFFFAOYSA-N prop-2-enyl 3-oxobutanoate Chemical compound CC(=O)CC(=O)OCC=C AXLMPTNTPOWPLT-UHFFFAOYSA-N 0.000 description 1
- KVIKMJYUMZPZFU-UHFFFAOYSA-N propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)O KVIKMJYUMZPZFU-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 235000003441 saturated fatty acids Nutrition 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000013599 spices Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- AQWHMKSIVLSRNY-UHFFFAOYSA-N trans-Octadec-5-ensaeure Natural products CCCCCCCCCCCCC=CCCCC(O)=O AQWHMKSIVLSRNY-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000005809 transesterification reaction Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- CUXYLFPMQMFGPL-UYWAGRGNSA-N trichosanic acid Natural products CCCCC=C/C=C/C=CCCCCCCCC(=O)O CUXYLFPMQMFGPL-UYWAGRGNSA-N 0.000 description 1
- UMFJXASDGBJDEB-UHFFFAOYSA-N triethoxy(prop-2-enyl)silane Chemical compound CCO[Si](CC=C)(OCC)OCC UMFJXASDGBJDEB-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
- UOKUUKOEIMCYAI-UHFFFAOYSA-N trimethoxysilylmethyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)COC(=O)C(C)=C UOKUUKOEIMCYAI-UHFFFAOYSA-N 0.000 description 1
- OVFFWUHKSNMAOJ-UHFFFAOYSA-N tris(ethenyl)-[ethenyl(dimethyl)silyl]oxysilane Chemical compound C=C[Si](C)(C)O[Si](C=C)(C=C)C=C OVFFWUHKSNMAOJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 125000005065 undecenyl group Chemical group C(=CCCCCCCCCC)* 0.000 description 1
- 229960002703 undecylenic acid Drugs 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/76—Making non-permanent or releasable joints
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2483/00—Presence of polysiloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Laminated Bodies (AREA)
Abstract
一种粘合剂用于将两种化学相似的衬底暂时粘合，尤其用于将硅晶片粘合至硅衬底的用途，其中，该粘合剂是可交联的硅酮组合物，其特征在于，它包含至少一种粘合调节剂(A)，其选自由粘合促进剂或脱模剂或它们的组合组成的组中，条件是，在DIN ISO813下测量时，粘合调节剂(A)以使得固化的粘合剂和一种衬底之间的粘合力比固化的粘合剂和另一种衬底之间的粘合力大至少0.5N/mm的量存在，并且在粘合分离过程中，固化的粘合剂可以在至少80％的面积上仅从一种衬底粘合分离。
Description
本发明涉及基于可交联的硅酮组合物的粘合剂用于两种化学相似衬底的暂时粘结的用途。术语“暂时粘结”是指在所期望的时间点衬底可以再次彼此分离。当将粘结分离时，粘合剂层几乎完全保留在两种衬底中的一种上，并因此，随后极少或没有粘合剂层物质需要通过机械或化学方法从另一种衬底除去。
在工业操作中，需要用于两种化学相似衬底之间且在使用之后再次尤其从期望的衬底分离的暂时粘合剂。在此，给予优选的是衬底和粘合剂层之间的粘合剂断裂。迄今为止，使用的配制物能够粘结两种相似的衬底，而没有优选一种衬底。根据现有技术，到目前为止，已经能够通过物理或化学方法仅通过预处理各衬底而有意调节粘合力。物理方法的实例是表面研磨、UV照射、火焰处理、电晕处理、或等离子体处理。使用这些种类的预处理步骤，活化了衬底材料的表面或近表面层，即形成了主要为极性基团的官能团。化学方法的实例是用粘合促进添加剂(也称为引物)的预处理或用防止粘合的物质(也称为脱模剂)的预处理。
半导体元件的制造者对于要制造的芯片的市场需求要求更低的总高度。用于减少成形元件的总高度的一种选择是使晶片更薄。可以在形状单一化前或后进行研磨操作(切割)。
由于晶片变得越来越大并且越来越薄，因此降低了晶片的结构强度。因此，当用通常使用的设备和材料如现在使用的切割用胶带时，例如，由于不足的机械支撑，使得大、薄的晶片可能破裂。此外，不可能通过目前使用的粘合剂膜(胶带)将突出了上达至100μm以上的晶片结构(隆起块)完全封闭而没有任何空隙，因此，通常，在真空操作过程中，保留的空隙可以导致薄晶片的破坏或损害。
此问题的一种可能的技术方案是通过暂时粘合剂层将晶片粘结至硬质衬底(例如，粘结至另一个晶片，或例如，粘结至晶片载体如玻璃)，以增加机械强度，然后进行期望的工序，最后将此时具有仅10μm-100μm的厚度的晶片从衬底再次分离。在此，在研磨和下游工序的过程中，将通过粘合剂连接的衬底用作机械增强物。
对于变薄的晶片的后续研究还包括通过等离子体蚀刻的抗力结构(resistant structures)的形成以及例如，如金属喷镀和残余物清洗的操作。
用于将半导体晶片固定在载体上的一种可能性由胶带表示。EP0838086B1描述了由用于半导体晶片加工的热塑性弹性体嵌段共聚物组成的胶带，然而，当使用具有表面结构(隆起晶片)的晶片时，材料的有限弹性导致多个问题。此外，材料的热塑性能导致降低的热稳定性，该稳定性是薄化晶片(背面研磨)之后的背面操作(等离子体处理，CVD等)所必须的。
WO2009／003029A2要求保护用作晶片和载体之间的暂时粘合剂的热塑性有机聚合物(酰亚胺、酰胺酰亚胺、以及酰胺酰亚胺-硅氧烷)。
WO2009／094558A2描述了晶片和载体的暂时粘结，该粘结不是在整个面积上而是仅在边缘区域中发生。研磨操作和可能的背面操作之后，粘结被化学地、光化学地、热地、或热机械地破坏。
EP0603514A2描述了用于薄化半导体晶片的方法，其中，使用的粘合材料适合于至多200℃的温度。
美国申请US2004／0121618A1描述了适用于旋涂操作并且由热塑性聚氨酯以及作为主要组分的二甲基乙酰胺和丙二醇单甲醚组成的液体粘合剂。
EP1089326B1要求保护由用防尘膜覆盖的硅酮弹性体组成的用于晶片的载体，薄膜和硅酮层之间的脱模力为5g／25mm至500g／25mm(根据JIS K6854)。还描述了用于生产晶片载体的方法。
WO2004／051708A2描述了用于晶片的操作的方法，其中，将脱模层施加在晶片的正面和载体层(＝粘合剂)之间。该脱模层的生产代表了生产链中的附加步骤，导致延长的操作时间并导致较高的生产成本。
主要问题是：在一方面，使用粘合剂层，将相似的物质在这种情况下如预先处理的在其表面上还可以包括除了硅之外的物质的硅晶片牢固连接至同样由硅组成的载体，而在另一方面，例如，在常用于晶片加工如晶片研磨或薄化、涂覆等的步骤之后，在晶片表面将它们极其简单并选择性地分离。
迄今为止，由于使用的聚合物的高温稳定性不够，使得例如对于某些处理技术如二氧化硅或高温介质的热沉积而言，所使用的根据现有技术的系统不能令人满意。此外，除了上达至超过300℃的必要的温度稳定性之外，相对于机械参数(在研磨晶片背面的过程中)的配制品的适当的平衡和优化、相对于常用于芯片加工中的各种化学品的化学稳定性、挥发性次级产物(污染风险)的最小释放、以及未固化的粘合剂(在应用至晶片的过程中)的粘度是开发夹层系统中的合适物质所考虑的重要目标。
因此，尤其在半导体工业中，存在对用于两种化学相似衬底暂时粘结的选择性粘合的粘合剂的需要。通过工业上可行的处理(例如，喷涂、印刷、浸渍、旋转涂覆)，粘合剂必须适合于应用，并且通过合适的方法在期望的时间点必须能够从期望的衬底分离而没有残留。此外，除了支撑结合(坚固结合至衬底)之外，粘合剂还具有某些弹性性能。
这些要求尤其适用于晶片粘结过程。粘合剂的性能将使得能够加工晶片而不破坏或损害后者，此外，并且还能够以支撑的方式围绕晶片的正面结构。
出乎意料地，已经发现，根据本发明，通过使用粘合剂实现了此目的，即，在没有用粘合剂预处理的情况下，在两种化学相似的衬底暂时或同时选择性粘结。
粘合剂是可交联的硅酮组合物，其特征在于：它包含选自包括粘合促进剂或脱模剂或它们的组合的组中的至少一种粘合调节剂(A)，
条件是，根据DIN ISO813测量时，粘合调节剂(A)以使得固化粘合剂和一种衬底之间的粘合力或剥离强度比固化粘合剂和另一种衬底之间的粘合力大至少0.5N／mm的量存在，并且当粘结分离时，固化粘合剂可以在至少80％的面积上仅从一种衬底粘合分离。
可交联的硅酮组合物优先选自包括缩合交联、加成交联、以及过氧化交联的硅酮组合物的组中。
特别有利的特征是，根据本发明，使用可交联的硅酮组合物作为粘合剂使得能够在两种化学相似的衬底之间构建选择性粘合的组件，而不需要预处理待粘结的衬底。
根据本发明，使用可交联的硅酮组合物作为粘合剂允许暂时的晶片粘结过程而没有晶片破坏或损害。由于在期望的时间点粘结剂从晶片无残留分离，使得其可以容易地应用在工业过程(例如，喷涂、印刷、浸渍、旋转涂覆)中。此外，粘结剂粘结表现出支撑粘结(＝坚固地粘结至衬底)的期望的机械性能和弹性，并且能够以支撑方式围绕晶片的正面结构。
作为根据本发明使用的粘合剂的物理基础原则上可以是基于任何期望的交联机理的任何可固化的硅酮组合物。例如，通过暴露于电磁辐射(例如，微波、UV光、X射线、或γ射线)或高能量粒子(例如，电子、质子、α粒子)，可以实现将后者转化成硅酮弹性体的硅酮组合物的固化。虽然意图还包括工业实践中较不熟悉的交联机理，实例是通过脱水缩合、硫醇-烯反应、以及“点击(click)”反应的交联，但优选通过技术人员熟知的缩合交联、加成交联、或过氧化交联发生硅酮组合物的固化。其中，硅酮组合物是热塑性硅酮组合物，在这种情况下，可以通过预先熔融硅酮物质实现衬底的粘结，换句话说，将“固化”理解为是指在其熔点以下冷却硅酮物质(物理交联)。还可以通过上述如由UV引发、铂催化的氢化硅烷化反应的交联可能性的组合实现固化。
固化粘合剂的力学特性(机械特性，mechanical characteristic)(硬度、模量、对撕裂延续部分的耐性、拉伸强度、回弹弹性(rebound elasticity))在现有技术已知的范围内。根据交联系统，本发明的粘合剂可以采取单组分或多组分配制品的形式，配制品的粘度适合于应用过程(例如，旋涂、注塑等)并且在现有技术已知的范围内。优选考虑0.01Pa·s至100Pa·s的范围，并且特别优选0.1Pa·s至10Pa·s的范围。
合适的缩合交联的硅酮组合物是迄今为止在现有技术中已知的所有硅酮组合物。这组化合物的典型代表是可以在技术文献中在RTV-1(室温硫化；1-组分)和RTV-2(2-组分)标识下发现的缩合交联的硅酮组合物。在一种组分中，RTV-2物质通常包括具有末端硅烷醇基团的至少一种有机聚硅氧烷以及另外的组分如填料和增塑剂。第二组分(固化剂)包括与加速缩合反应的催化剂结合以及可选地与另外的组分如增塑剂结合的交联剂硅烷或硅氧烷。具体地，分别用作交联剂硅烷或硅氧烷的是具有至少三个可水解基团的硅烷或硅氧烷。那些优选的是三-或四官能的烷氧基硅烷、它们的部分水解产物、或烷氧基硅氧烷。确定为有效的缩合催化剂的化合物包括有机锡化合物，实例是二羧酸二烷基锡(dialkyltin dicarboxylates)和二羧酸锡(II)(tin(II)dicarboxylates)，以及有机钛化合物。在大气水分的入口上固化硅酮弹性体，消除水解产物的缩合交联的RTV-1物质是基于能够用包括多个可水解基团的交联剂端基封闭硅烷醇末端的有机硅氧烷而同时没有引发交联的可能性。使用的交联剂可以是具有至少三个可水解基团的所有硅烷或是这些硅烷的部分水解产物。根据可水解基团的性质，例如，在乙酰氧基、肟、烷氧、异戊二烯氧(isoprenoxy)、酰胺、胺、以及氨氧交联系统之间做出了区分，其与乙酸、肟、乙醇、丙酮、酰胺、胺或羟胺的消除交联。为了获得足够高的交联速率，大多数RTV-1物质包括缩合催化剂，优选使用有机锡和有机钛化合物。
合适的加成交联硅酮组合物是迄今为止在现有技术中已知的所有硅酮组合物。在最简单的情况下，它们包含分子中具有至少两种脂肪族不饱和基团(例如，Si结合的乙烯基)的至少一种有机聚硅氧烷、以及分子中具有两种或多种SiH基团的至少一种有机氢聚硅氧烷、以及促进Si结合的氢加入脂肪族重键的至少一种催化剂，这种催化剂也被称为氢化硅烷化催化剂。例如，虽然Rh的络合物、Pd的络合物、以及Ru的络合物也表现出高催化活性，但优选的氢化硅烷化催化剂是铂的化合物。一种特别优选的Pt催化剂是Karstedt催化剂(Pt(0)-二乙烯基四甲基二硅氧烷络合物)。加成可交联硅酮物质的其他组分包括如填料、抑制剂(用于设置适当的处理寿命和交联速率)、颜料、粘合促进剂、热稳定剂等。
合适的过氧化交联硅酮组合物是迄今为止在现有技术中已知的所有过氧化物诱导的自由基交联硅酮组合物。在最简单的情况下，例如，它们包含每分子中具有至少2种可交联的基团如甲基基团或乙烯基基团的至少一种有机聚硅氧烷以及至少一种合适的有机过氧化物。
根据本发明，使用的粘合剂包括优选0.01wt％至10wt％、更优选0.1wt％(重量百分数)至5wt％(重量百分数)、并且更加优选0.5wt％(重量百分数)至3wt％(重量百分数)的量的粘合调节剂(A)。
当使用的粘合调节剂(A)是粘合促进剂时，原则上可以使用根据现有技术被认为是硅酮组合物中的粘合促进剂的所有化合物。此类粘合促进剂的实例是具有可水解基团和SiC结合的乙烯基、丙烯酰氧基、甲基丙烯酰氧基、环氧基、酸酐基、酸基、酯基、或醚基的硅烷，以及它们的部分水解产物和共水解产物，给予优选的是具有乙烯基的硅烷和具有环氧基并且包括乙氧基或乙酰氧基基团作为可水解基团的硅烷，特别优选的实例是乙烯基三乙氧基硅烷、乙烯基三乙酰氧基硅烷、环氧丙基三乙氧基硅烷、缩水甘油基氧基丙基三甲氧基硅烷、甲基丙烯酰氧基甲基三甲氧基硅烷，以及它们的部分水解产物和共水解产物。
在包括以下列出的那些的文本中明确公开了这些种类的粘合促进剂，其中，它们用作使得得到的硅酮弹性体能够自粘合至各种衬底的非交联硅酮物质的部分。例如，欧洲申请公开说明书EP0875536A2描述了环氧官能的烷氧基硅烷和／或烷氧硅氧烷作为粘合促进剂。专利说明书US4,257,936参见了丙烯酰三烷氧基硅烷与环状氢聚硅氧烷(hydrogenpolysiloxane)的加成物作为粘合促进剂。US4,011,247公开了氢聚硅氧烷的环氧加成物，同时专利说明书US3,510,001公开了异氰酸三烯丙基酯的烷氧硅烷加成物。US5,312,855描述了与具有两种或更多种烯丙酯基团的有机化合物结合的具有SiH和烷氧硅烷基或缩水甘油基基团的硅氧烷化合物作为粘合改进剂。DE102006 022 097A1和DE103 38 478A1描述了为了提高硅酮弹性体的粘附力的目的的特定的含Si-H的交联剂。
作为粘合促进剂的另一组物质是过渡金属醇盐(alkoxide)和过渡金属螯合物，尤其是金属钛和锆的那些。例如，通过可水解、可缩合的基团，它们能够发挥它们的促粘作用，或作为酯交换催化剂(更具体地，结合烷氧基官能化的硅烷和羟基官能化的聚有机硅氧烷)。它们的实例是烯丙基乙酰乙酸三异丙氧基钛(titanium allylacetoacetate triisopropoxide)、钛酸四正丁基酯、二异丙氧基(双-2，4-戊二酮)钛(titanium diisopropoxide(bis-2，4-pentanedionate))、钛酸四辛基酯、钛酸甲酚酯、乙酰乙酸氧钛(titanyl acetoacetate)、乙酰丙酮锆、以及正丙醇锆(zirconiumn-propoxide)。同样，铝螯合物如乙酰丙酮铝(aluminum acetylacetonate)可以用作粘合促进剂。使用上述化合物的组合还可以有利于促粘作用。用于制备这些粘合促进剂的方法是现有技术。
此外，可以使用不饱和或环氧官能的化合物作为粘合促进剂，实例是3-缩水甘油基氧基丙基-烷氧基-烷基硅烷或(环氧环己基)-乙基-烷氧基-烷基硅烷。同样，适合于此目的的是带有有机基团的不饱和硅烷如，例如3-甲基丙烯酰氧基丙基烷氧基硅烷、3-丙烯酰氧基丙基烷氧基硅烷、以及乙烯基-、烯丙基-、己烯基-或十一碳烯基烷氧基硅烷。环氧官能的硅烷的实例是3-缩水甘油基氧基丙基三甲氧基硅烷、3-缩水甘油基氧基丙基三乙氧基硅烷、(环氧环己基)乙基二甲氧基硅烷、(环氧环己基)乙基二乙氧基硅烷、以及它们的组合。合适的不饱和烷氧基硅烷的实例包括乙烯基三甲氧基硅烷、烯丙基三甲氧基硅烷、烯丙基三乙氧基硅烷、己烯基三甲氧基硅烷、十一碳烯基三甲氧基硅烷、3-甲基丙烯酰氧基丙基三甲氧基硅烷、3-甲基丙烯酰氧基丙基三乙氧基硅烷、3-丙烯酰氧基丙基三甲氧基硅烷、3-丙烯酰氧基丙基三乙氧基硅烷、以及它们的组合。
官能的硅氧烷同样可以用作粘合促进剂。硅氧烷相应于羟基封端的聚有机硅氧烷与一种或多种以上描述的烷氧基硅烷或羟基封端的聚有机硅氧烷和一种或多种上述官能的硅烷的混合物的反应产物。例如，可以使用3-缩水甘油基氧基丙基三甲氧基硅烷和羟基封端的甲基乙烯基硅氧烷与3-缩水甘油基氧基丙基三甲氧基硅烷的反应产物的混合物。
还可以以物理混合物而不是反应产物的形式使用这些组分。
此外，以上描述的官能硅烷的部分水解产物可以用作粘合促进剂。通常，或者通过硅烷与水反应，并且随后制备混合物，或者通过制备混合物，随后部分水解来制备它们。
如果使用的粘合调节剂(A)是脱模剂，那么原则上可以使用根据现有技术已知的所有化合物作为脱模剂。
合适的脱模剂是非官能的称为硅酮流体的聚二甲基硅氧烷、含苯基的聚二甲基硅氧烷、含氟化或部分氟化基团的聚二甲基硅氧烷、脂肪酸及它们的金属盐、饱和或不饱和脂肪酸的脂肪酸酯、聚卤代烯烃如，例如，聚四氟乙烯，或无机化合物(例如，磷酸钙、氮化钛、氮化硼)。
作为脱模剂的苯基取代的聚二甲基硅氧烷的实例如下：
二苯基硅氧烷-二甲基硅氧烷共聚物：CAS[68083-14-7]
苯基甲基硅氧烷-二甲基硅氧烷共聚物：CAS[63148-52-7]
苯基甲基硅氧烷均聚物：CAS[9005-12-3]
苯基甲基硅氧烷-二苯基硅氧烷共聚物
1，1，5，5-四苯基-1，3，3，5-四甲基三硅氧烷：CAS[3982-82-9]
1，1，3，5，5-五苯基-1，3，5-三甲基三硅氧烷：CAS3390-61-2
烷基甲基硅氧烷-芳烷基甲基硅氧烷共聚物：CAS[68037-77-4]，[68952-01-2]，[68440-89-1]，[68037-76-3]
乙烯基封端的二苯基硅氧烷-二甲基硅氧烷共聚物：CAS[68951-96-2]
乙烯基封端的聚苯基甲基硅氧烷：CAS[225927-21-9]
乙烯基苯基甲基封端的乙烯基苯基-苯基甲基硅氧烷共聚物：CAS[8027-82-1]
聚乙基氢硅氧烷：CAS[24979-95-1]
SiH-封端的甲基氢-苯基甲基硅氧烷共聚物：CAS[115487-49-5]
Me3-Si封端的甲基氢-苯基甲基硅氧烷共聚物
甲基氢-苯基甲基-二甲基硅氧烷共聚物
硅烷醇封端的二苯基硅氧烷-二甲基硅氧烷共聚物：CAS[68951-93-9]，[68083-14-7]
硅烷醇封端的聚二苯基硅氧烷：CAS[63148-59-4]
特别合适的脱模剂的实例是包含氟化或部分氟化基团以及除了含氟基团之外可以包括另外的官能性如乙烯基基团或Si-H基团的聚二甲基硅氧烷。在本发明的意义上，包含芳基基团的聚二甲基硅氧烷同样是脱模剂。给予优选的是包括苯基基团并且可以包括其他官能团如乙烯基基团或Si-H基团的聚二甲基硅氧烷。同样用作脱模剂的是称为脂肪酸的有机单羧酸及其金属盐。饱和有机单羧酸的实例是己酸、庚酸、辛酸、壬酸或天竺葵酸、癸酸或发酸、十二烷酸或月桂酸、十四烷酸或肉豆蔻酸、十五烷酸、十六烷酸或棕榈酸、十七烷酸或珍珠酸、十八烷酸或硬脂酸、十九烷酸、二十烷酸或花生酸、二十二烷酸或山嵛酸、二十四烷酸或木蜡酸、二十六烷酸或蜡酸、二十八烷酸或褐霉酸、三十烷酸或蜂花酸。不饱和有机脂肪酸的实例是(10Z)-十一-10-烯酸或十一碳烯酸、(9Z)-十四-9-烯酸或肉豆蔻烯酸、(9Z)-十六-9-烯酸或棕榈油酸、(6Z)-十八-9-烯酸或岩芹酸、(9Z)-十八-9-烯酸或油酸、(9E)-十八-9-烯酸或反油酸、(11E)-十八-11-烯酸或异油酸、(13Z)-二十二-13-烯酸或芥酸、(9Z，12Z)-十八-9，12-二烯酸或亚油酸、(9Z，12Z，15Z)-十八-9，12，15-三烯酸或α-亚麻酸、(6Z，9Z，12Z)-十八-6，9，12-三烯酸或γ-亚麻酸、(8E，10E，12Z)-十八-8，10，12-三烯酸或十八碳三烯酸、(9Z，11E，13Z)-十八-9，11，13-三烯酸或石榴酸、(9Z，11E，13E)-十八-9，11，13-三烯酸或α-桐油酸(eleostearic acid)、(9E，11E，13E)-十八-9，11，13-三烯酸或β-桐油酸、(5Z，8Z，11Z，14Z)-二十-5，8，11，14-四烯酸或花生四烯酸、(5Z，8Z，11Z，14Z，17Z)-二十-5，8，11，14，17-五烯酸或二十碳五烯酸、(7Z，10Z，13Z，16Z，19Z)-二十二-7，10，13，16，19-五烯酸或鱼泡酸。
作为脱模剂的含氟聚二甲基硅氧烷的实例如下：
聚(3，3，3-三氟丙基甲基硅氧烷)：CAS[63148-56-1]
3，3，3-三氟丙基甲基硅氧烷-二甲基硅氧烷共聚物：CAS[115361-68-7]
双(十三氟辛基)四甲基硅氧烷：CAS[71363-70-7]
乙烯基封端的三氟丙基甲基硅氧烷-二甲基硅氧烷共聚物：CAS[68951-98-4]
乙烯基封端的二乙基硅氧烷-二甲基硅氧烷共聚物
3，3，3-三氟丙基甲基硅氧烷-甲基氢硅氧烷共聚物
3，3，3-三氟丙基甲基硅氧烷-甲基氢硅氧烷-二甲基硅氧烷共聚物
硅烷醇封端的聚三氟丙基甲基硅氧烷：CAS[68607-77-2]
作为脱模剂的脂肪酸的盐的实例是上述脂肪酸的锂、钠、钾、镁、钙、锶、钡、锌，或铝盐。优选的是脂肪酸的钙盐和锌盐。
合适的脂肪酸酯的实例是上述酸的甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二烷基、十四烷基、十五烷基、十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十二烷基、二十四烷基、二十六烷基、二十八烷基、或三十烷基酯。不饱和或支链脂肪酸酯也适用于该应用。
优选的脂肪酸酯是包含10至60个之间的碳原子，并且更优选10至40个之间的碳原子的那些。
在本发明的意义上，适合作为脱模剂的物质的其他组是聚卤代烯烃如，例如，聚四氟乙烯，或无机金属盐如，例如，磷酸钙、氮化钛、氮化硼等。
优选用作脱模剂的是苯基取代的硅酮流体或脂肪酸酯。进一步地优选是连接那些不会不利地影响本发明的粘合剂组合物的交联反应的那些脱模剂。
在用作粘合剂的可交联硅酮组合物中，以上列出的作为粘合调节剂(A)的脱模剂和粘合促进剂各自具有特定的溶解度和可混合性行为。该行为可以在宽限值内变化。例如，粘合调节剂可以完全溶解在粘合剂中，相当于分子水平上均匀的混合物。然而，通常，由于其理化性质，使得粘合调节剂(A)在粘合剂组合物中将具有降低的溶解度，即使用肉眼观察，粘合调节剂也可以均匀分散或混合在粘合剂组合物中。粘合调节剂(A)也可以与粘合剂组合物完全不相容，例如，从快速开始的相分离、非可分散性，或风化和／或渗出效果的实例显而易见。因此，根据粘合调节剂(A)与粘合剂的硅酮基体的不相容的程度，粘合调节剂(A)易于迁移至硅酮物质的表面，或形成具有微相分离的混合物。
出乎意料地，已经发现，即使在由粘合调节剂(A)和非交联的硅酮组合物(＝粘合剂)组成的均相混合物的情况下，根据加入的粘合调节剂(A)的选择，即使当第一和第二衬底在物理化学术语中完全相同时，也可以将粘合剂和第一衬底之间发展的粘着调节至比粘合剂粘合至第二衬底发展的粘着更大或更弱。已经观察到，将从衬底1、粘合剂层、以及衬底2形成的组件的三维位置对粘合的发展起重要的作用。在不希望限制专利申请的保护范围的情况下，显而易见的推测是通过使用的硅酮组合物和粘合调节剂(A)之间的密度差所起的决定性的作用。对于其中粘合调节剂是粘合促进剂的情况：例如，如果粘合调节剂(A)的密度(ρAR)大于硅酮组合物的密度(ρS)，则粘合优选发展至底部衬底；如果粘合调节剂(A)的密度(ρAR)低于硅酮组合物的密度(ρS)，则粘合优选发展至顶部衬底。同样地，对于其中粘合调节剂(A)是脱模剂，换句话说，降低粘着力的物质的情况下，显而易见的推测是：如果粘合调节剂(A)的密度低于硅酮组合物的密度，则掺和的粘合调节剂(A)降低顶部衬底的粘着。如果在粘合调节剂(A)的密度高于硅酮组合物的密度的情况下，则减小对底部衬底的粘合力。
至少一种粘合促进剂和至少一种脱模剂的组合也可以用作粘合调节剂(A)以获得选择性粘合的期望效果。在这种情况下，例如，有利的是，粘合促进剂具有比硅酮组合物高的密度而脱模剂具有比硅酮组合物低的密度，或者脱模剂具有比硅酮组合物高的密度而粘合促进剂具有比硅酮组合物低的密度。认为粘合调节剂(A)和硅酮组合物之间的最小密度差为约0.10g／cm3。
由存在的任何填料的性质和量关键性地改变粘合剂的密度(并且通常是增加)。如果所讨论的填料是非常细分的填料，那么由该填料引起的密度变化实际上导致改变的粘合行为。另一方面，如果填料是非常粗糙的微粒，那么事实上它们确实造成肉眼可见的密度变化，但是没有显著影响基于硅酮组合物和粘合调节剂(A)的流体组分之间的密度差的粘合性能。因此，在没有限制保护范围的情况下，在该意义上，可以在约1μm的平均粒径下接近细分的填料和粗糙的微粒之间的限值。
此外，通过在填料表面上吸收或吸附粘合调节剂(A)，存在的任何填料可以影响组成粘合行为基础的粘合调节剂(A)的迁移行为。然而，可以通过选择合适的填料避免这种不希望的效果。
所描述的硅酮组合物可以可选地包含迄今为止也已经使用的所有其他佐剂以产生可交联的硅酮组合物。可以用作本发明的硅酮组合物中的组分的增强填料的实例是具有至少50m2／g的BET表面积的发烟或沉淀的二氧化硅以及碳黑和活性炭如炉黑和乙炔黑，给予优选的是具有至少50m2／g的BET表面积的气相(煅制)和沉淀的二氧化硅。所述的二氧化硅填料在性能上可以是亲水的，或可以已经通过已知的方法疏水化(憎水化，hydrophobized)。如果混合亲水填料，那么有必要加入疏水剂(憎水剂，hydrophobizing agent)。本发明的可交联的组合物中的活性增强填料的量在0至70wt％的范围内、优选在0至50wt％。
作为组分，本发明的硅酮组合物可以作为选择的物质以上达至70wt％、优选0.0001wt％至40wt％的分数包含另外的添加剂。例如，这些添加剂可以是惰性填料、不同于交联的聚硅氧烷的树脂的聚有机硅氧烷、增强和非增强填料、杀菌剂、香料、流变添加剂、腐蚀抑制剂、抗氧化剂、光稳定剂、阻燃剂、以及用于影响电学性能的试剂、分散助剂、溶剂、颜料、染料、增塑剂、有机聚合物、热稳定剂等。它们包括添加剂如精细磨碎的石英、硅藻土、粘土、滑石、白垩、锌钡白、碳黑、石墨、金属氧化物、金属碳酸盐、金属硫酸盐、羧酸的金属盐、金属粉尘、纤维(如玻璃纤维、聚合纤维、聚合粉)、染料、颜料等。
此外，这些填料可以是导热或导电的。导热填料的实例是氮化铝、氧化铝、钛酸钡、氧化铍、氮化硼、金刚石、石墨、氧化镁、微粒金属(如，例如，铜、金、镍、或银)、碳化硅、碳化钨、氧化锌、以及它们的组合。导热填料在现有技术中是已知并且可从商业上购得。例如，CB-A20S和Al-43-Me是商业上可从Showa-Denko购得的各种颗粒尺寸的氧化铝填料，以及AA-04、AA-2以及AAl8是商业上可从Sumitomo化学公司购得的氧化铝填料。银填料商业上可从美国Attleboro，Massachusetts的Metalor科技美国公司(Metalor Technologies U.S.A.Corp.)购得。氮化硼填料商业上可从美国俄亥俄州克利夫兰现代陶瓷公司(Advanced Ceramics Corporation，Cleveland，Ohio，U.S.A)。增强填料包括二氧化硅和短纤维如，例如可以使用具有不同颗粒尺寸和不同颗粒尺寸分布的填料的组合。
粘合剂可以进一步包含一种或多种可选的组分，经受的条件是，可选的组分对于本发明的方法过程中的粘合剂配制品的固化不具有不利后果。连同其他一起，可选的组分的实例包括一种或多种溶剂、一种或多种抑制剂、隔离物。
当粘合剂包含溶剂时，就整体而言，应当确保溶剂对系统不具有有害影响。合适的溶剂在现有技术中是已知并且可商业上购得。例如，溶剂可以是具有3至20个碳原子的有机溶剂。溶剂的实例包括脂肪族烃如庚烷、辛烷、异辛烷、壬烷、癸烷、十一烷、以及十二烷；芳香烃如，例如，均三甲苯、二甲苯、以及甲苯；酯如，例如乙酸乙酯和丁内酯；醚如，例如正丁醚和聚乙二醇单甲醚；酮如，例如甲基异丁基酮和甲基戊基酮；硅酮流体如，例如直链、支链以及环状聚二甲基硅氧烷；以及这些溶剂的组合。通过常规实验可以容易地确定粘合剂配制品中特定溶剂的最适浓度。根据该化合物的重量，溶剂的量可以在0％至95％之间或在1％至95％之间。
当包含抑制剂和稳定剂时，它们起针对性的调整处理寿命、起始温度、以及本发明的硅酮组合物的交联速率的作用。在加成交联组合物领域中非常熟知这些抑制剂和稳定剂。常用的抑制剂的实例是炔醇如1-乙炔基-1-环己醇、2-甲基-3-丁炔-2-醇、以及3，5-二甲基-1-己炔-3-醇、3-甲基-1-十二炔-3-醇；聚甲基乙烯基环硅氧烷如1，3，5，7-四乙烯基四甲基四环硅氧烷；具有甲基乙烯基-SiO1／2基团和／或R2乙烯基SiO1／2端基的低分子量的硅酮流体如二乙烯基四甲基二硅氧烷、四乙烯基二甲基二硅氧烷；氰尿酸三烷基酯，马来酸烷基酯如马来酸二烯丙酯、马来酸二甲酯、以及马来酸二乙酯；富马酸烷基酯如富马酸二烯丙酯和富马酸二乙酯；有机氢过氧化物如异丙苯过氧化氢(cumene hydroperoxide)、叔丁基过氧化氢、以及蒎烷过氧化氢；有机过氧化物；有机亚砜；有机胺、二胺和酰胺；磷烷(phosphane和亚磷酸盐(酯)；腈；三唑；二氮杂环丙烷(diaziridine)；以及肟。这些抑止剂添加剂的效果取决于它们的化学结构，因此必须各自确定浓度。基于混合物的总重量，优选以0.00001％至5％、更优选0.00005％至2％、并且非常优选0.0001％至1％的比例加入抑制剂和抑制剂混合物。
如果包含隔离物，则它们可以由有机颗粒、无机颗粒、或它们的组合组成。隔离物可以是导热的、导电的、或者既导电又导热的。隔离物可以具有至少25微米上达至250微米的颗粒尺寸。隔离物可以包括单分散珠。隔离物的实例包括聚苯乙烯、玻璃、全氟烃聚合物、以及它们的组合。可以除填料或它们的部分之外，或代替填料或它们的部分加入隔离物。
使用根据本发明的可交联的粘合剂具有优点：可以使用容易获得的原料以简单方法生产粘合剂，从而是经济的。根据本发明，使用的粘合剂具有的另外的优点：作为单组分配制品，在25℃和环境压力下它们具有良好的贮藏寿命，并且仅在升高的温度下快速交联。根据本发明，使用的粘合剂具有优点：在两组分配制品的情况下，在混合两组分之后，它们产生可交联的硅酮物质，在25℃和环境压力下在长时间周期内，保留了该硅酮物质的可加工性，因此表现出非常长的贮存期，并且仅在升高的温度下快速交联。
本发明的另一个主题是用于将两种化学相似的衬底暂时粘结的方法，其特征在于
a)将粘合剂施加至衬底1，
b)观察10秒至120分钟的等待时间，
c)在上述的等待时间b)的过程中除去存在的任何溶剂，
d)将衬底2与该粘合剂接触，
e)进行所述粘合剂的固化，
f)在衬底1和／或衬底2上执行进一步的操作步骤，
g)将衬底分离，其中固化的粘合剂保留在两种衬底中的一种上，
所述粘合剂是可交联的硅酮组合物，其特征在于：它包含选自包括粘合促进剂或脱模剂或它们的组合的组中的至少一种粘合调节剂(A)，
条件是，根据DIN ISO813测量时，粘合调节剂(A)以使得固化的粘合剂和一种衬底之间的粘合力比固化的粘合剂和另一种衬底之间的粘合力至少大0.5N／mm的量存在，并且当粘结分离时，固化的粘合剂仅可以在至少80％的面积上从一种衬底粘合分离。
在一个优选的实施方式中，衬底1是硅晶片并且衬底2是硅载体。
在未硫化状态中，本发明的粘合剂具有0.01Pa·s至50Pa·s之间的粘度。
以10K／min的加热速率加热至300℃的热重分析(TGA)中的粘合剂的量的差不超过0.5wt％。
粘合剂配制品的具有6mm厚度的固化的粘合剂的标准试样具有10至95之间、优选30至90之间、并且更优选40至80之间的肖氏A硬度。
如果必需要，合适的添加剂可以降低固化的粘合剂的电阻以防止分层过程中的静电充电和放电。为了此目的，可以使用现有技术的抗静电剂和提高导电性的添加剂。在室温下，使用的固化的粘合剂的电阻率小于1*1015Ωcm、优选小于1*1014Ωcm。
在室温以及1s-1的剪切率下，未固化的粘合剂的动力粘度在50mPa·s和10 000mPa·s之间。
在室温下在1s-1和100s-1的剪切率下使用的未固化的粘合剂的动力粘度的比率小于3、优选小于2、并且更优选小于1.2。
使用的粘合剂的优点是，可以通过传统技术将其磨碎。
实施例：
在以下描述的实施例中，对于份数和百分数的所有数据，除非另有说明，否则是指重量。除非另有说明，否则以下实施例在环境大气压力(即在约1000hPa)和室温(即在约20℃)下，或在当在没有额外的加热或冷却的情况下反应物在室温下结合时所确定的温度下进行。以下所有粘度数据是指25℃的温度。随后说明本发明的实施例在上下文中不具有任何限制作用。
根据DIN ISO813测定粘合力并以N／mm显示。使用以下符号评估分离模式：
R在弹性体中分离(粘合断裂)
D在弹性体和支撑板之间分离(在至少80％的面积上粘合断裂)
使用以下缩写：
Cat. 铂催化剂
Ex. 实施例
No. 序号
ρS 硅酮组合物的密度
ρHR 粘合调节剂的密度
PDMS 聚二甲基硅氧烷
AR 粘合调节剂
n.i. 非发明的(非本发明的)
实施例1：硅酮类组合物1
100份具有约220的平均链长的乙烯基封端的PDMS
3份能够完全交联聚合物的SiH交联剂
100ppm的1-乙炔基环己醇
基于金属的10ppm的铂催化剂
密度：0.97g／cm3
实施例2：硅酮类组合物2
100份具有约220的平均链长的乙烯基封端的PDMS
40份具有约300m2／g的BET表面积的预先疏水化的气相二氧化硅
3份能够完全交联聚合物的SiH交联剂
100ppm的1-乙炔基环己醇
基于金属的10ppm的铂催化剂
密度：1.12g／cm3
实施例3：硅酮类组合物3
100份具有约220的平均链长的乙烯基封端的PDMS
50份具有25μm的平均粒径的球形氧化铝
3份能够完全交联聚合物的SiH交联剂
100ppm的1-乙炔基环己醇
基于金属的10ppm的铂催化剂
密度：0.97g／cm3(忽视(不考虑)Al氧化物)
实施例4：硅酮类组合物4
100份包含乙烯基基团的MQ树脂
30份具有约100的平均链长的乙烯基封端的PDMS
3份能够完全交联聚合物的SiH交联剂
100ppm的1-乙炔基环己醇
基于金属的10ppm的铂催化剂
密度：1.08g／cm3
实施例5：硅酮类组合物5
100份包含乙烯基基团的MQ树脂
50份具有约100的平均链长的乙烯基封端的PDMS
7份能够完全交联聚合物的SiH交联剂
100ppm的1-乙炔基环己醇
基于金属的10ppm的铂催化剂
密度：1.07g／cm3
以下列表示出了用作添加剂的粘合调节剂，基于硅酮组合物，其以3wt％的浓度加入：
表1至表4示出了实施例6至90。它们示出了哪一种粘合调节剂混合在哪一种硅酮类组合物中并且检测了它们的粘合力。然而，为了实现所描述的效果，还可以使用所述物质的混合物。用作衬底1的是抛光的硅晶片，衬底2代表了镀锌钢(galvanized steel)；以及衬底3是铝板。在交联过程中(在165℃下15分钟)，一方面，衬底被送到硅酮组合物以下(相当于粘合力底部(底部粘合力))，并且在另一方面，衬底被放置在硅酮组合物之上(相当于粘合力顶部(顶部粘合力))。
Claims (3)
1.一种粘合剂用于将硅晶片暂时粘结至硅载体的用途，
所述粘合剂是可交联的硅酮组合物，其特征在于，它包含至少0.01wt％至10wt％的粘合调节剂(A)，所述粘合调节剂(A)选自包括以下项的组中：
脱模剂，选自以下项的组中：
脂肪酸以及它们的金属盐、饱和或不饱和的脂肪酸的脂肪酸酯、或它们的组合，
条件是，
-根据DIN ISO 813测量时，所述粘合调节剂(A)与所述硅酮组合物的密度相比具有至少0.10g/cm3的密度差，并且因此固化的粘合剂与所述硅载体之间的粘合力比所固化的粘合剂与所述硅晶片之间的粘合力大至少0.5N/mm，
-并且当所述粘结分离时，所固化的粘合剂能够在至少80％的面积上仅从所述硅晶片粘合分离。
2.根据权利要求1所述的粘合剂的用途，所述可交联的硅酮组合物选自包括缩合交联、加成交联、以及过氧化交联的硅酮组合物的组中。
3.一种用于将硅晶片暂时粘结至硅载体的方法，其特征在于，
a)将权利要求1或2中所述的粘合剂施加至所述硅晶片，
b)观察10秒至120分钟的等待时间，
c)在上述的等待时间b)的过程中除去存在的任何溶剂，
d)将所述硅载体与所述粘合剂接触，
e)进行所述粘合剂的固化，
f)在所述硅晶片和/或所述硅载体上执行进一步的操作步骤，
g)将所述硅晶片和所述硅载体分离，其中所固化的粘合剂保留在所述硅载体上。
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| DE102011079687A DE102011079687A1 (de) | 2011-07-22 | 2011-07-22 | Temporäre Verklebung von chemisch ähnlichen Substraten |
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| US9315696B2 (en) | 2013-10-31 | 2016-04-19 | Dow Global Technologies Llc | Ephemeral bonding |
| JP6378516B2 (ja) * | 2014-03-27 | 2018-08-22 | 日東電工株式会社 | シリコーン系粘着テープ |
| TWI661935B (zh) * | 2014-06-13 | 2019-06-11 | 日商富士軟片股份有限公司 | 暫時接著用積層體、暫時接著用積層體的製造方法以及帶有元件晶圓的積層體 |
| CN104130738B (zh) * | 2014-07-08 | 2017-01-04 | 浙江汇杰有机硅股份有限公司 | 一种对不锈钢粘接良好的酸性硅酮密封胶及其制备方法 |
| US10141216B2 (en) * | 2014-10-22 | 2018-11-27 | Promerus, Llc | Room temperature debondable and thermally curable compositions |
| WO2016101129A1 (en) * | 2014-12-23 | 2016-06-30 | Henkel (China) Company Limited | 1k high temperature debondable adhesive |
| US9644118B2 (en) | 2015-03-03 | 2017-05-09 | Dow Global Technologies Llc | Method of releasably attaching a semiconductor substrate to a carrier |
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| JP6589766B2 (ja) * | 2015-08-18 | 2019-10-16 | 信越化学工業株式会社 | ウエハ加工用接着材、ウエハ積層体及び薄型ウエハの製造方法 |
| WO2017073507A1 (ja) * | 2015-10-29 | 2017-05-04 | 東レ株式会社 | 仮貼り用積層体フィルム、仮貼り用積層体フィルムを用いた基板加工体および積層基板加工体の製造方法、ならびにこれらを用いた半導体装置の製造方法 |
| CN108699421B (zh) * | 2016-02-23 | 2021-10-29 | 美国陶氏有机硅公司 | 选择性粘附硅橡胶 |
| SG11201811340VA (en) * | 2016-06-22 | 2019-01-30 | Nissan Chemical Corp | Adhesive containing polydimethyl siloxane |
| WO2018216732A1 (ja) * | 2017-05-24 | 2018-11-29 | 日産化学株式会社 | エポキシ変性ポリシロキサンを含有する仮接着剤 |
| WO2019009365A1 (ja) * | 2017-07-06 | 2019-01-10 | 日産化学株式会社 | フェニル基含有ポリシロキサンを含有する仮接着剤 |
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| CN103703088A (zh) | 2014-04-02 |
| JP5774219B2 (ja) | 2015-09-09 |
| US20140150972A1 (en) | 2014-06-05 |
| EP2734594A2 (de) | 2014-05-28 |
| DE102011079687A1 (de) | 2013-01-24 |
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| US9034139B2 (en) | 2015-05-19 |
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