CN103700727B - 光电耦合器的封装方法 - Google Patents
光电耦合器的封装方法 Download PDFInfo
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- CN103700727B CN103700727B CN201310734171.2A CN201310734171A CN103700727B CN 103700727 B CN103700727 B CN 103700727B CN 201310734171 A CN201310734171 A CN 201310734171A CN 103700727 B CN103700727 B CN 103700727B
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- 239000011248 coating agent Substances 0.000 claims abstract description 15
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 238000001723 curing Methods 0.000 claims description 11
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- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001746 injection moulding Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 6
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- 239000004305 biphenyl Substances 0.000 claims description 4
- 235000010290 biphenyl Nutrition 0.000 claims description 4
- 239000005011 phenolic resin Substances 0.000 claims description 4
- 229920001568 phenolic resin Polymers 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- VOOLKNUJNPZAHE-UHFFFAOYSA-N formaldehyde;2-methylphenol Chemical compound O=C.CC1=CC=CC=C1O VOOLKNUJNPZAHE-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
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- 239000007924 injection Substances 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- AICMYQIGFPHNCY-UHFFFAOYSA-J methanesulfonate;tin(4+) Chemical compound [Sn+4].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O AICMYQIGFPHNCY-UHFFFAOYSA-J 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000004593 Epoxy Substances 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310734171.2A CN103700727B (zh) | 2013-12-27 | 2013-12-27 | 光电耦合器的封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310734171.2A CN103700727B (zh) | 2013-12-27 | 2013-12-27 | 光电耦合器的封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103700727A CN103700727A (zh) | 2014-04-02 |
CN103700727B true CN103700727B (zh) | 2016-01-20 |
Family
ID=50362197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310734171.2A Active CN103700727B (zh) | 2013-12-27 | 2013-12-27 | 光电耦合器的封装方法 |
Country Status (1)
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CN (1) | CN103700727B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105355607A (zh) * | 2015-11-06 | 2016-02-24 | 常州顶芯半导体技术有限公司 | 一种直插式集成电路封装体 |
CN106910721A (zh) * | 2017-03-08 | 2017-06-30 | 东莞市佳骏电子科技有限公司 | 一种二极管及其封装工艺流程 |
CN107634135A (zh) * | 2017-08-17 | 2018-01-26 | 芜湖晶鑫光电照明有限公司 | 一种led灯盘封装工艺流程 |
CN110774528A (zh) * | 2020-01-02 | 2020-02-11 | 四川立泰电子有限公司 | 一种低应力高导热功率器件的塑封工艺 |
CN112397495B (zh) * | 2020-11-18 | 2023-11-07 | 珠海市大鹏电子科技有限公司 | 一种高灵敏小型化光电耦合器及其高灵敏处理方法 |
CN114141760A (zh) * | 2022-01-06 | 2022-03-04 | 北京华芯微半导体有限公司 | 一种软包封光电耦合器方法及软包封光电耦合器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201467091U (zh) * | 2009-05-08 | 2010-05-12 | 常州银河世纪微电子有限公司 | 光耦驱动保护器件 |
CN201838584U (zh) * | 2010-09-30 | 2011-05-18 | 常州银河世纪微电子有限公司 | 封装三极管 |
CN202487575U (zh) * | 2012-02-10 | 2012-10-10 | 常州银河世纪微电子有限公司 | 一种复合二极管结构 |
-
2013
- 2013-12-27 CN CN201310734171.2A patent/CN103700727B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201467091U (zh) * | 2009-05-08 | 2010-05-12 | 常州银河世纪微电子有限公司 | 光耦驱动保护器件 |
CN201838584U (zh) * | 2010-09-30 | 2011-05-18 | 常州银河世纪微电子有限公司 | 封装三极管 |
CN202487575U (zh) * | 2012-02-10 | 2012-10-10 | 常州银河世纪微电子有限公司 | 一种复合二极管结构 |
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CN103700727A (zh) | 2014-04-02 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 213022 Changzhou, North New District, Jiangsu Yangtze River Road, No. 19 Patentee after: CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD. Address before: 213022 Changzhou, North New District, Jiangsu Yangtze River Road, No. 19 Patentee before: CHANGZHOU GALAXY CENTURY MICRO-ELECTRONICS Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240902 Address after: 213022 No. 208, Chaohu Road, Xinbei District, Jiangsu, Changzhou Patentee after: Changzhou Galaxy Optoelectronics Technology Co.,Ltd. Country or region after: China Address before: 213022 No.19, Changjiang North Road, Xinbei District, Changzhou City, Jiangsu Province Patentee before: CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD. Country or region before: China |