CN103688355B - 使用硅穿孔的集成电路设计 - Google Patents

使用硅穿孔的集成电路设计 Download PDF

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Publication number
CN103688355B
CN103688355B CN201280032257.4A CN201280032257A CN103688355B CN 103688355 B CN103688355 B CN 103688355B CN 201280032257 A CN201280032257 A CN 201280032257A CN 103688355 B CN103688355 B CN 103688355B
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tsv
tsvs
circuit element
die
active circuit
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CN103688355A (zh
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阿利弗·瑞曼
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Xilinx Inc
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Xilinx Inc
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    • HELECTRICITY
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201280032257.4A 2011-06-27 2012-01-16 使用硅穿孔的集成电路设计 Active CN103688355B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/170,020 2011-06-27
US13/170,020 US8560982B2 (en) 2011-06-27 2011-06-27 Integrated circuit design using through silicon vias
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