CN103682058B - 基板、显示面板和显示装置 - Google Patents

基板、显示面板和显示装置 Download PDF

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Publication number
CN103682058B
CN103682058B CN201310412888.5A CN201310412888A CN103682058B CN 103682058 B CN103682058 B CN 103682058B CN 201310412888 A CN201310412888 A CN 201310412888A CN 103682058 B CN103682058 B CN 103682058B
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China
Prior art keywords
light
substrate
pixels
gap
wiring substrate
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CN201310412888.5A
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English (en)
Chinese (zh)
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CN103682058A (zh
Inventor
小堀勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Publication of CN103682058A publication Critical patent/CN103682058A/zh
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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02—Combinations of only two kinds of elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
CN201310412888.5A 2012-09-21 2013-09-11 基板、显示面板和显示装置 Active CN103682058B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-208128 2012-09-21
JP2012208128A JP6017904B2 (ja) 2012-09-21 2012-09-21 実装基板、表示パネルおよび表示装置

Publications (2)

Publication Number Publication Date
CN103682058A CN103682058A (zh) 2014-03-26
CN103682058B true CN103682058B (zh) 2017-06-16

Family

ID=50318942

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310412888.5A Active CN103682058B (zh) 2012-09-21 2013-09-11 基板、显示面板和显示装置

Country Status (3)

Country Link
US (1) US8872415B2 (enExample)
JP (1) JP6017904B2 (enExample)
CN (1) CN103682058B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2531357Y2 (ja) 1990-08-03 1997-04-02 日之出水道機器株式会社 取付け金具を有する転落防止体
TWI576798B (zh) 2015-06-22 2017-04-01 宏齊科技股份有限公司 顯示面板與應用其之複合式顯示面板
DE102016108776A1 (de) * 2016-05-12 2017-11-16 Osram Opto Semiconductors Gmbh Optische Anordnung und Anzeigegerät
KR102740814B1 (ko) * 2016-12-20 2024-12-09 엘지디스플레이 주식회사 표시 장치와 이를 포함하는 멀티 스크린 표시 장치
JP2021506108A (ja) 2017-12-04 2021-02-18 トンシュー グループ カンパニー リミテッドＴｕｎｇｈｓｕ Ｇｒｏｕｐ Ｃｏ．， Ｌｔｄ． マイクロｌｅｄデバイス用上部基板、マイクロｌｅｄデバイス及びマイクロｌｅｄ表示装置
US10839740B2 (en) * 2018-04-18 2020-11-17 Innolux Corporation Panel and tiled device thereof
CN110390886A (zh) * 2018-04-18 2019-10-29 群创光电股份有限公司 面板及其拼接装置
JP2020053447A (ja) * 2018-09-25 2020-04-02 日亜化学工業株式会社 発光モジュール
CN115327815B (zh) 2020-01-21 2025-03-28 京东方科技集团股份有限公司 发光板、线路板以及显示装置
JP7530795B2 (ja) * 2020-10-05 2024-08-08 株式会社東海理化電機製作所 表示装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101262724A (zh) * 2007-03-07 2008-09-10 精工爱普生株式会社 发光装置及其制造方法以及电子设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH067300B2 (ja) * 1985-08-13 1994-01-26 松下電器産業株式会社 発光ダイオ−ドデイスプレイ装置
JPH118070A (ja) * 1997-06-17 1999-01-12 Casio Comput Co Ltd 表示装置
JP2002270365A (ja) 2001-03-12 2002-09-20 Nippon Hoso Kyokai <Nhk> Ｅｌ素子
JP2003162229A (ja) 2001-09-14 2003-06-06 Sony Corp 画像表示装置用フィルタ及び画像表示装置、並びに画像表示装置の製造方法
US20060244371A1 (en) * 2005-05-02 2006-11-02 Eastman Kodak Company OLED device having improved lifetime and output
US20070103056A1 (en) * 2005-11-08 2007-05-10 Eastman Kodak Company OLED device having improved light output
US7710026B2 (en) * 2005-12-08 2010-05-04 Global Oled Technology Llc LED device having improved output and contrast
JP4479827B2 (ja) 2008-05-12 2010-06-09 ソニー株式会社 発光ダイオード表示装置及びその製造方法
JP5609878B2 (ja) * 2009-09-07 2014-10-22 凸版印刷株式会社 有機ｅｌ表示装置、カラーフィルタ基板、及び有機ｅｌ表示装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101262724A (zh) * 2007-03-07 2008-09-10 精工爱普生株式会社 发光装置及其制造方法以及电子设备

Also Published As

Publication number Publication date
JP6017904B2 (ja) 2016-11-02
JP2014063033A (ja) 2014-04-10
US20140084775A1 (en) 2014-03-27
CN103682058A (zh) 2014-03-26
US8872415B2 (en) 2014-10-28

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Effective date of registration: 20160907

Address after: Kanagawa, Japan

Applicant after: SONY semiconductor solutions

Address before: Tokyo, Japan

Applicant before: Sony Corp

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