CN103635612B - 由冶金级硅或精炼冶金级硅制造基于硅的纳米颗粒的方法 - Google Patents

由冶金级硅或精炼冶金级硅制造基于硅的纳米颗粒的方法 Download PDF

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Publication number
CN103635612B
CN103635612B CN201280022365.3A CN201280022365A CN103635612B CN 103635612 B CN103635612 B CN 103635612B CN 201280022365 A CN201280022365 A CN 201280022365A CN 103635612 B CN103635612 B CN 103635612B
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China
Prior art keywords
substrate
silicon
metallurgical
ppm
weight
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CN201280022365.3A
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English (en)
Chinese (zh)
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CN103635612A (zh
Inventor
V.莱森科
J.克莱姆
M.梅德加奥伊
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Irons Co
Centre National de la Recherche Scientifique CNRS
Institut National des Sciences Appliquees de Lyon
Original Assignee
Centre National de la Recherche Scientifique CNRS
Apollon Solar SAS
Institut National des Sciences Appliquees de Lyon
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
    • C01B3/06—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen, e.g. water, acids, bases, ammonia, with inorganic reducing agents
    • C01B3/10—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen, e.g. water, acids, bases, ammonia, with inorganic reducing agents by reaction of water vapour with metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Composite Materials (AREA)
  • Electrochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
CN201280022365.3A 2011-03-09 2012-03-09 由冶金级硅或精炼冶金级硅制造基于硅的纳米颗粒的方法 Active CN103635612B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1151926A FR2972461B1 (fr) 2011-03-09 2011-03-09 Procede de fabrication de nanoparticules semi-conductrices
FR1151926 2011-03-09
PCT/EP2012/054124 WO2012120117A1 (fr) 2011-03-09 2012-03-09 Procede de fabrication de nanoparticules a base de silicium a partir de silicium de grade metallurgique ou de grade metallurgique ameliore

Publications (2)

Publication Number Publication Date
CN103635612A CN103635612A (zh) 2014-03-12
CN103635612B true CN103635612B (zh) 2017-07-11

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CN201280022365.3A Active CN103635612B (zh) 2011-03-09 2012-03-09 由冶金级硅或精炼冶金级硅制造基于硅的纳米颗粒的方法

Country Status (7)

Country Link
US (1) US9352969B2 (enExample)
EP (1) EP2683856B1 (enExample)
JP (1) JP6117118B2 (enExample)
CN (1) CN103635612B (enExample)
CA (1) CA2829147C (enExample)
FR (1) FR2972461B1 (enExample)
WO (1) WO2012120117A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017112772A1 (en) * 2015-12-21 2017-06-29 William Marsh Rice University Electrochemical etching of multiple silicon materials
DE102017000623A1 (de) 2016-09-29 2018-03-29 Renate Fleuren Arbeitssicherheitsgerüst
CN115443139A (zh) * 2020-04-02 2022-12-06 博斯凯矽剂科技株式会社 氧化应激抑制剂和抗氧化剂
CA3173940A1 (en) * 2020-04-02 2021-10-07 Yuki Kobayashi Composite material
CN116008368B (zh) * 2022-03-30 2024-12-20 武汉维尔博生物科技有限公司 金电极、非酶葡萄糖传感器及其构筑方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997006550A1 (en) * 1995-08-03 1997-02-20 Massachusetts Institute Of Technology Method for producing semiconductor particles
CN101296625A (zh) * 2005-07-27 2008-10-29 Psi医疗有限公司 含硅的食品

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4124410A (en) * 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates
JPH0459601A (ja) * 1990-06-26 1992-02-26 Asahi Chem Ind Co Ltd 水素の製造方法
US5208001A (en) * 1991-06-20 1993-05-04 Texas Instruments Incorporated Method for silicon purification
US5445718A (en) * 1994-01-24 1995-08-29 General Motors Corporation Electrochemical etch-stop on n-type silicon by injecting holes from a shallow p-type layer
ATE215626T1 (de) * 1997-07-28 2002-04-15 Nft Nanofiltertechnik Gmbh Verfahren zur herstellung eines filters
US6585947B1 (en) * 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles
US6743406B2 (en) * 1999-10-22 2004-06-01 The Board Of Trustees Of The University Of Illinois Family of discretely sized silicon nanoparticles and method for producing the same
US6819845B2 (en) * 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US6992298B2 (en) 2001-11-21 2006-01-31 The Board Of Trustees Of The University Of Illinois Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making
JP2004115349A (ja) * 2002-09-30 2004-04-15 Honda Motor Co Ltd 水素発生方法
JP2004307328A (ja) * 2003-03-25 2004-11-04 Sanyo Electric Co Ltd 水素製造方法、水素製造装置およびこれを備えた発動機
FR2858313B1 (fr) * 2003-07-28 2005-12-16 Centre Nat Rech Scient Reservoir d'hydrogene a base de nano-structures de silicium
US20070202029A1 (en) * 2003-12-04 2007-08-30 Gary Burns Method Of Removing Impurities From Metallurgical Grade Silicon To Produce Solar Grade Silicon
JP2005285380A (ja) * 2004-03-26 2005-10-13 Quantum 14:Kk ダイオード素子およびそれを用いた装置
CN101218168A (zh) * 2005-06-30 2008-07-09 开普敦大学 表面改性的半导体纳米粒子
JP4837465B2 (ja) * 2006-07-11 2011-12-14 日揮触媒化成株式会社 シリコン微粒子含有液の製造方法およびシリコン微粒子の製造方法
US8920625B2 (en) * 2007-04-27 2014-12-30 Board Of Regents Of The University Of Texas System Electrochemical method of making porous particles using a constant current density
NZ583120A (en) * 2007-07-10 2012-03-30 Univ California Materials and methods for delivering compositions to selected tissues
GB0713898D0 (en) * 2007-07-17 2007-08-29 Nexeon Ltd A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997006550A1 (en) * 1995-08-03 1997-02-20 Massachusetts Institute Of Technology Method for producing semiconductor particles
CN101296625A (zh) * 2005-07-27 2008-10-29 Psi医疗有限公司 含硅的食品

Also Published As

Publication number Publication date
JP6117118B2 (ja) 2017-04-19
CA2829147C (en) 2019-04-30
CA2829147A1 (en) 2012-09-13
WO2012120117A1 (fr) 2012-09-13
EP2683856A1 (fr) 2014-01-15
CN103635612A (zh) 2014-03-12
JP2014518535A (ja) 2014-07-31
US20130341234A1 (en) 2013-12-26
FR2972461A1 (fr) 2012-09-14
EP2683856B1 (fr) 2017-08-09
FR2972461B1 (fr) 2021-01-01
US9352969B2 (en) 2016-05-31

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Effective date of registration: 20220707

Address after: Villeurbanne, France

Patentee after: INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON

Patentee after: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

Patentee after: Irons Co.

Address before: Villeurbanne, France

Patentee before: INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON

Patentee before: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

Patentee before: APOLLON SOLAR