CA2829147C - Process for manufacturing silicon-based nanoparticles from metallurgical-grade silicon or refined metallurgical-grade silicon - Google Patents

Process for manufacturing silicon-based nanoparticles from metallurgical-grade silicon or refined metallurgical-grade silicon Download PDF

Info

Publication number
CA2829147C
CA2829147C CA2829147A CA2829147A CA2829147C CA 2829147 C CA2829147 C CA 2829147C CA 2829147 A CA2829147 A CA 2829147A CA 2829147 A CA2829147 A CA 2829147A CA 2829147 C CA2829147 C CA 2829147C
Authority
CA
Canada
Prior art keywords
silicon
substrate
metallurgical
process according
ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CA2829147A
Other languages
English (en)
French (fr)
Other versions
CA2829147A1 (en
Inventor
Volodymyr Lysenko
Jed Kraiem
Mahdi MEDJAOUI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique
Institut National des Sciences Appliquées de Lyon
Yxens SAS
Original Assignee
Centre National de la Recherche Scientifique
Apollon Solar SAS
Institut National des Sciences Appliquées de Lyon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique, Apollon Solar SAS, Institut National des Sciences Appliquées de Lyon filed Critical Centre National de la Recherche Scientifique
Publication of CA2829147A1 publication Critical patent/CA2829147A1/en
Application granted granted Critical
Publication of CA2829147C publication Critical patent/CA2829147C/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen; Reversible storage of hydrogen
    • C01B3/02—Production of hydrogen; Production of gaseous mixtures containing hydrogen
    • C01B3/06—Production of hydrogen; Production of gaseous mixtures containing hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen with inorganic reducing agents
    • C01B3/08—Production of hydrogen; Production of gaseous mixtures containing hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen with inorganic reducing agents by reaction of inorganic compounds with metals
    • C01B3/10—Production of hydrogen; Production of gaseous mixtures containing hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen with inorganic reducing agents by reaction of inorganic compounds with metals by reaction of water vapour with metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Composite Materials (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
CA2829147A 2011-03-09 2012-03-09 Process for manufacturing silicon-based nanoparticles from metallurgical-grade silicon or refined metallurgical-grade silicon Active CA2829147C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1151926 2011-03-09
FR1151926A FR2972461B1 (fr) 2011-03-09 2011-03-09 Procede de fabrication de nanoparticules semi-conductrices
PCT/EP2012/054124 WO2012120117A1 (fr) 2011-03-09 2012-03-09 Procede de fabrication de nanoparticules a base de silicium a partir de silicium de grade metallurgique ou de grade metallurgique ameliore

Publications (2)

Publication Number Publication Date
CA2829147A1 CA2829147A1 (en) 2012-09-13
CA2829147C true CA2829147C (en) 2019-04-30

Family

ID=45811514

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2829147A Active CA2829147C (en) 2011-03-09 2012-03-09 Process for manufacturing silicon-based nanoparticles from metallurgical-grade silicon or refined metallurgical-grade silicon

Country Status (7)

Country Link
US (1) US9352969B2 (enExample)
EP (1) EP2683856B1 (enExample)
JP (1) JP6117118B2 (enExample)
CN (1) CN103635612B (enExample)
CA (1) CA2829147C (enExample)
FR (1) FR2972461B1 (enExample)
WO (1) WO2012120117A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017112772A1 (en) * 2015-12-21 2017-06-29 William Marsh Rice University Electrochemical etching of multiple silicon materials
DE102017000623A1 (de) 2016-09-29 2018-03-29 Renate Fleuren Arbeitssicherheitsgerüst
CN115443139A (zh) * 2020-04-02 2022-12-06 博斯凯矽剂科技株式会社 氧化应激抑制剂和抗氧化剂
CN115397773A (zh) * 2020-04-02 2022-11-25 博斯凯矽剂科技株式会社 复合材料
CN116008368B (zh) * 2022-03-30 2024-12-20 武汉维尔博生物科技有限公司 金电极、非酶葡萄糖传感器及其构筑方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4124410A (en) * 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates
JPH0459601A (ja) * 1990-06-26 1992-02-26 Asahi Chem Ind Co Ltd 水素の製造方法
US5208001A (en) * 1991-06-20 1993-05-04 Texas Instruments Incorporated Method for silicon purification
US5445718A (en) * 1994-01-24 1995-08-29 General Motors Corporation Electrochemical etch-stop on n-type silicon by injecting holes from a shallow p-type layer
US5690807A (en) * 1995-08-03 1997-11-25 Massachusetts Institute Of Technology Method for producing semiconductor particles
CA2297077A1 (en) * 1997-07-28 1999-02-04 N F T Nanofiltertechnik Gesellschaft Mit Beschrankter Haftung Method for producing a filter
US6585947B1 (en) * 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles
US6743406B2 (en) 1999-10-22 2004-06-01 The Board Of Trustees Of The University Of Illinois Family of discretely sized silicon nanoparticles and method for producing the same
US6819845B2 (en) * 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US6992298B2 (en) * 2001-11-21 2006-01-31 The Board Of Trustees Of The University Of Illinois Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making
JP2004115349A (ja) * 2002-09-30 2004-04-15 Honda Motor Co Ltd 水素発生方法
JP2004307328A (ja) * 2003-03-25 2004-11-04 Sanyo Electric Co Ltd 水素製造方法、水素製造装置およびこれを備えた発動機
FR2858313B1 (fr) * 2003-07-28 2005-12-16 Centre Nat Rech Scient Reservoir d'hydrogene a base de nano-structures de silicium
JP2007513048A (ja) * 2003-12-04 2007-05-24 ダウ・コーニング・コーポレイション 太陽電池グレードのケイ素を生産するための、冶金グレードのケイ素から不純物を除去する方法
JP2005285380A (ja) * 2004-03-26 2005-10-13 Quantum 14:Kk ダイオード素子およびそれを用いた装置
ZA200800436B (en) * 2005-06-30 2009-09-30 Univ Cape Town Semiconducting nanoparticles with surface modification
GB0515353D0 (en) * 2005-07-27 2005-08-31 Psimedica Ltd Food
JP4837465B2 (ja) * 2006-07-11 2011-12-14 日揮触媒化成株式会社 シリコン微粒子含有液の製造方法およびシリコン微粒子の製造方法
US8920625B2 (en) * 2007-04-27 2014-12-30 Board Of Regents Of The University Of Texas System Electrochemical method of making porous particles using a constant current density
US20100196435A1 (en) * 2007-07-10 2010-08-05 The Regents Of The University Of California Materials and methods for delivering compositions to selected tissues
GB0713898D0 (en) * 2007-07-17 2007-08-29 Nexeon Ltd A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries

Also Published As

Publication number Publication date
FR2972461A1 (fr) 2012-09-14
EP2683856B1 (fr) 2017-08-09
JP6117118B2 (ja) 2017-04-19
CN103635612B (zh) 2017-07-11
FR2972461B1 (fr) 2021-01-01
CA2829147A1 (en) 2012-09-13
US9352969B2 (en) 2016-05-31
CN103635612A (zh) 2014-03-12
EP2683856A1 (fr) 2014-01-15
US20130341234A1 (en) 2013-12-26
JP2014518535A (ja) 2014-07-31
WO2012120117A1 (fr) 2012-09-13

Similar Documents

Publication Publication Date Title
JP4580939B2 (ja) 太陽電池用のシリコン供給原料
US9352969B2 (en) Process for manufacturing silicon-based nanoparticles from metallurgical-grade silicon or refined metallurgical-grade silicon
CN101495681A (zh) 用于生产半导体级硅的装置和方法
US9362015B2 (en) Silicon-based solar cell with eutectic composition
CA2587222A1 (en) Process for producing a polycrystalline silicon ingot
Zhilkashinova et al. Structure and properties of metallurgical-grade silicon
KR101074304B1 (ko) 금속 실리콘과 그 제조 방법
EP1485956B2 (en) Process of producing multicrystalline silicon substrate
CN102312292A (zh) 一种掺杂的直拉单晶硅
Kraiem et al. High performance solar cells made from 100% UMG silicon obtained via the PHOTOSIL process
Murugesan et al. Investigation of phosphoric acid-catalyzed silver-assisted chemical etching for upgrading metallurgical grade silicon to solar grade silicon
CN102312290A (zh) 一种掺杂的铸造多晶硅及制备方法
Lee et al. A study on the fabrication of polycrystalline Si wafer by direct casting for solar cell substrate
JP5173013B1 (ja) シリコンの精製方法、結晶シリコン材料の製造方法、および、太陽電池の製造方法
JP5173014B1 (ja) シリコンの精製方法、結晶シリコン材料の製造方法、および、太陽電池の製造方法
Wan et al. Low-Cost Multicystalline Silicon Wafers by Purifying Metallurgical Grade Silicon with Tin Solution
JP5118268B1 (ja) 高純度シリコンの製造方法および高純度シリコン
NO320217B1 (no) Silisiumsubstratmateriale for epitaksibelegning for fremstilling av solceller
Moro et al. Low-cost solar-grade silicon: Purification and consolidation of silicon fines from wafering
Civiero Sodium hydroxide chemical etching of silicon surfaces from end-of-life solar panels
Yu SINGLE CRYSTAL SILICON SUBSTRATE PREPARED BY VAPOUR-LIQUID INTERFACE GROWTH
Azarenkov et al. Monocrystalline structure formation of doped perfect silicon crystals
Degoulange et al. Dopant specifications for p-type UMG silicon: mono-c vs multi-c
Coletti et al. Impact of iron, nickel and chromium in feedstock on multicrystalline silicon solar cell properties
Roy et al. A New Process For Diamond Synthesis at Low Pressures is a Potential Route to the Growth of Large Single Crystal Diamond

Legal Events

Date Code Title Description
EEER Examination request

Effective date: 20170130

MPN Maintenance fee for patent paid

Free format text: FEE DESCRIPTION TEXT: MF (PATENT, 13TH ANNIV.) - STANDARD

Year of fee payment: 13

U00 Fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U00-U101 (AS PROVIDED BY THE NATIONAL OFFICE); EVENT TEXT: MAINTENANCE REQUEST RECEIVED

Effective date: 20250305

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-U102 (AS PROVIDED BY THE NATIONAL OFFICE); EVENT TEXT: MAINTENANCE FEE PAYMENT DETERMINED COMPLIANT

Effective date: 20250305

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-U102 (AS PROVIDED BY THE NATIONAL OFFICE); EVENT TEXT: MAINTENANCE FEE PAYMENT PAID IN FULL

Effective date: 20250305

MPN Maintenance fee for patent paid

Free format text: FEE DESCRIPTION TEXT: MF (PATENT, 14TH ANNIV.) - STANDARD

Year of fee payment: 14

U00 Fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U00-U101 (AS PROVIDED BY THE NATIONAL OFFICE); EVENT TEXT: MAINTENANCE REQUEST RECEIVED

Effective date: 20260305

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-U102 (AS PROVIDED BY THE NATIONAL OFFICE); EVENT TEXT: MAINTENANCE FEE PAYMENT PAID IN FULL

Effective date: 20260305