CN103624886A - Solar silicon wafer cutting steel wire - Google Patents
Solar silicon wafer cutting steel wire Download PDFInfo
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- CN103624886A CN103624886A CN201310625386.0A CN201310625386A CN103624886A CN 103624886 A CN103624886 A CN 103624886A CN 201310625386 A CN201310625386 A CN 201310625386A CN 103624886 A CN103624886 A CN 103624886A
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- steel wire
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- cutting steel
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- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention relates to a solar silicon wafer cutting steel wire which comprises a steel wire body and non-circle grooves formed in the outer surface of the steel wire body. The non-circle grooves are evenly formed in the outer surface of the steel wire body at equal interval, and the non-circle grooves are in prism shapes. The multiple non-circle grooves are formed in the steel wire body, the capacity of the cutting steel wire to carry silicon carbide particles in mortar is high, the cutting resistance to the cutting steel wire is greatly reduced, the silicon rod cutting efficiency is easily improved, technical space is provided for reducing the steel wire diameter of the cutting steel wire, the cutting efficiency is high, a cutting gap is small, the thickness of a silicon wafer can be further reduced, the using amount of the mortar is less, the silicon rod cutting losses can be reduced, and the wafer discharging rate is improved.
Description
Technical field:
The present invention relates to metal wire rod processing technique field, relate in particular to solar silicon wafers cutting steel wire.
Background technology:
Solar energy polycrystalline silicon sheet is the main raw material of solar battery sheet, and the conventional production method of polysilicon chip is multi-wire saw.Guide wheel by slicer during multi-wire saw rotates and drives cutting steel wire to carry out rapid movement, and cutting steel wire carries silicon-carbide particle in mortar to the crystal bar cutting of polishing when rapid movement, thereby crystal bar is processed into silicon chip.The cutting steel wire using is at present the copper-plated straight line steel wire of smooth surface, steel wire diameter is larger, the ability of carrying carborundum is stronger, more be conducive to the cutting of silicon chip, yet the increase of steel wire diameter not only can increase cutting gap, reduce the piece rate of silicon rod, and Cutting Drag is large, the mortar consuming is many, the minimum diameter of existing cutting steel wire is 120 microns, the tensile strength of less cutting steel wire can be on the low side, during cutting, easily break, with the minimum thickness of this specification steel wire institute cutting silicon wafer, it is 200 microns, the again little Cutting Drag crushing that will be cut steel wire of thickness, in order further to reduce the production cost of silicon chip, improve piece rate, reduce silicon wafer thickness, the diameter that reduces cutting steel wire is the technological development direction that the industry is recognized altogether.
Summary of the invention:
The object of this invention is to provide a kind of solar silicon wafers cutting steel wire, it can further reduce steel wire diameter, can improve stock-removing efficiency again, reduces mortar consumption, improves solar silicon wafers and obtains sheet rate.
The technical scheme that the present invention takes is as follows:
A solar silicon wafers cutting steel wire, comprises steel wire body, it is characterized in that: on the outer surface of steel wire body, be provided with some non-round recesseds.
Further, the cross sectional shape of described non-round recessed is triangle, trapezoidal or rectangle.
Further, described non-round recessed is arranged on the outer surface of steel wire body in the shape of a spiral.
Further, described non-round recessed is set in qually spaced on the outer surface of steel wire body.
Due to some non-round recesseds being set on steel wire body, when mortar is when steel wire body in rapid movement contacts, multiple edge body silicon-carbide particle in mortar just falls in the non-round recessed being distributed on steel wire body surface, under the cohesive action of silicon-carbide particle glue in mortar, be engaged in comparatively securely in the non-round recessed on steel wire body, because cutting steel wire is in high-speed motion state, therefore the multiple edge body silicon-carbide particle that is arranged in non-round recessed on steel wire body just becomes the trickle sawtooth of cutting silicon rod, multiple edge body silicon-carbide particle is uniformly distributed along cutting steel wire cutting simultaneously, this has just realized the multitool cutting to silicon rod, thereby can significantly reduce the Cutting Drag of steel wire, for reducing steel wire diameter, cutting steel wire provides technology space.Through reality cutting, produce checking, the cutting steel wire that adopts surface to be provided with non-round recessed is cut into slices to silicon rod, steel wire diameter can be reduced to 110 microns, it is strong that this cutting steel wire carries in mortar the ability of silicon-carbide particle, be more conducive to the raising of silicon rod cutting efficiency, the thickness of silicon chip can be down to 170 microns, the end face crudy of silicon chip is better than prior art simultaneously, the roughness of silicon chip machined surface is less than 0.05 micron, flatness is less than 0.05 micron, the diameter of the steel wire body of this cutting steel wire is little, Cutting Drag is little, steel wire body is easy fracture not, cutting efficiency is high, cutting gap is little, silicon wafer thickness can further reduce, mortar consumption is few, can reduce silicon rod cutting loss, improve piece rate, through measuring and calculating, if the thickness of polysilicon chip is by 180 microns, steel wire diameter is by 115 microns, the piece rate of silicon ingot can improve more than 6%, according to 500 ten thousand slices/month of the existing output of applicant, 6 yuan of calculating of every silicon chip price, applicant monthly only piece rate individual event can increase by 300,000 silicon chips, can increase economic benefit 1,800,000 more, the minimizing of steel wire and mortar consumption also can further reduce production costs, economic benefit is very remarkable.
Accompanying drawing explanation:
Fig. 1 is structural representation of the present invention;
Fig. 2 is the A-A cutaway view of Fig. 1;
In figure, 1-steel wire body; The non-round recessed of 2-.
The specific embodiment:
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described:
Embodiment 1: a kind of solar silicon wafers cutting steel wire, as shown in Figure 1 and Figure 2, comprise steel wire body 1 and be arranged on the non-round recessed 2 on steel wire body 1 outer surface, non-round recessed 2 is equidistantly evenly distributed on steel wire body 1 outer surface, described non-round recessed 2 be shaped as prismatic, prismatoidal full-size is 6 microns, and the degree of depth is 3～4 microns.During cutting, the silicon-carbide particle in mortar enters in the non-round recessed 2 of prismatic of steel wire body 1, and the silicon-carbide particle being attached on steel wire body 1 carries out multitool polishing cutting to crystal bar when steel wire body 1 rapid movement, thereby fast crystal bar is processed into silicon chip.
In implementation process of the present invention, the cross sectional shape of non-round recessed 2, size as far as possible with supported the use mortar in the shape and size of silicon-carbide particle match, it is better that the depth dimensions of non-round recessed 2 is got 1/2～2/3 cutting effect of silicon-carbide particle particle diameter.
Claims (4)
1. a solar silicon wafers cutting steel wire, comprises steel wire body (1), it is characterized in that: on the outer surface of steel wire body (1), be provided with some non-round recesseds (2).
2. solar silicon wafers cutting steel wire according to claim 1, is characterized in that: the cross sectional shape of described non-round recessed (2) is triangle, trapezoidal or rectangle.
3. solar silicon wafers cutting steel wire according to claim 1, is characterized in that: described non-round recessed (2) is arranged on the outer surface of steel wire body (1) in the shape of a spiral.
4. solar silicon wafers cutting steel wire according to claim 1, is characterized in that: described non-round recessed (2) is set in qually spaced on the outer surface of steel wire body (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310625386.0A CN103624886A (en) | 2013-11-28 | 2013-11-28 | Solar silicon wafer cutting steel wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310625386.0A CN103624886A (en) | 2013-11-28 | 2013-11-28 | Solar silicon wafer cutting steel wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103624886A true CN103624886A (en) | 2014-03-12 |
Family
ID=50206520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310625386.0A Pending CN103624886A (en) | 2013-11-28 | 2013-11-28 | Solar silicon wafer cutting steel wire |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103624886A (en) |
-
2013
- 2013-11-28 CN CN201310625386.0A patent/CN103624886A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Deming Inventor after: Yang Fang Inventor after: Tan Jun Inventor after: Wang Qingfeng Inventor after: Chen Yuanfeng Inventor before: Yang Fang Inventor before: Tan Jun Inventor before: Wang Deming Inventor before: Meng Weiming Inventor before: Ding Haitao Inventor before: Zhang Lifeng Inventor before: Chou Dingyi |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: YANG FANG TAN JUN WANG DEMING MENG WEIMING DING HAITAO ZHANG LIFENG CHOU DINGYI TO: WANG DEMING YANG FANG TAN JUN WANG QINGFENG CHEN YUANFENG |
|
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140312 |