CN103692564A - Method for reducing cutting thickness of solar polycrystalline silicon chip - Google Patents
Method for reducing cutting thickness of solar polycrystalline silicon chip Download PDFInfo
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- CN103692564A CN103692564A CN201310624157.7A CN201310624157A CN103692564A CN 103692564 A CN103692564 A CN 103692564A CN 201310624157 A CN201310624157 A CN 201310624157A CN 103692564 A CN103692564 A CN 103692564A
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Abstract
The invention discloses a method for reducing the cutting thickness of a solar polycrystalline silicon chip. The structure of a guide wire groove is improved by adopting a small-diameter special cutting steel wire, the cutting steel wire can be cooled, the groove distance of the guide wire groove can be shortened, silicon carbide particles in mortar are polygon bodies of which the particle diameter is 8.2-8.6 mum, and the thickness of the solar silicon chip is reduced by mating three technical schemes. According to the method disclosed by the invention, not only can the thickness of the silicon chip be reduced, but also the processing accuracy of the silicon chip can be increased, the chip obtaining rate can be increased to a large extent, the cutting steel wire cannot rupture even the diameter of the cutting steel wire is small, the cutting efficiency is high, the cutting gap is small, the mortar using amount is less, the cutting loss of a silicon bar can be reduced, the chip obtaining rate can be increased, the production cost can be reduced, and the economic benefit is very significant.
Description
Technical field:
The present invention relates to the microtomy of polysilicon, relate in particular to a kind of method that reduces polysilicon solar battery slice cutting thickness.
Background technology:
Silicon is a kind of important electronics, optical material; in wide fields such as information, communication, space flight, environmental protection, play an important role; the market demand is increasing, but the high of solar cell price is to affect the principal element that solar cell is applied.Solar silicon wafers is the basic material of solar battery sheet, solar energy silicon rod sheet rate on the low side be the main cause that causes silicon chip high cost, how to improve silicon single crystal rod or the sub-ingot of polycrystalline sheet rate be the technical problem that people pay close attention to the most.At present the processing method of silicon chip generally adopts multi-wire saw, and multi-wire saw is that the cutting steel wire by the high-speed mobile on slicer carries silicon-carbide particle in cutting mortar to the crystal bar cutting of polishing, thereby crystal bar is processed into silicon chip.According to steel wire incision principle, it is more that steel wire diameter carries more greatly mortar, the silicon-carbide particle that participates in cutting is just more, cutting efficiency is higher, but steel wire diameter is larger, and Cutting Drag is larger, cutting gap is larger, the utilization rate of silicon material is lower, silicon rod sheet rate is lower, and silicon chip obtains sheet rate height and has directly affected the utilization rate of silicon material and the economic benefit of enterprise.At present, the cutting thickness of solar energy polycrystalline silicon sheet is 200 ± 20 microns.The guided wheel slot that slicer uses is apart from being 350-355 micron, and steel wire diameter is 120 ± 1 microns, and in mortar, carborundum particle diameter is 9.8-10.3 micron.Applicant is through repetition test, found improve silicon rod sheet rate effective technical way:
The first, dwindle guided wheel slot distance;
The second, reduce cutting steel wire diameter;
Three, adopt small particle diameter multiple edge body silicon carbide abrasive.
If but dwindle simply on the basis of existing technology guided wheel slot apart from, reduce cutting steel wire diameter, the tensile strength of cutting steel wire is inadequate, between cutting steel wire and guide wheel owing to there being high-speed friction, add in cutting steel wire and guide wheel contact position, because the latter half of cutting steel wire does not have mortar cooling, easily friction produces high temperature, make steel wire occur upper low high temperature difference, thereby more easily there is steel wire breakage, simultaneously, because the resistance of steel wire cutting is excessive, meeting crushing silicon chip when silicon wafer thickness is too small, silicon chip qualification rate declines.
Summary of the invention:
The object of this invention is to provide a kind of method that reduces solar energy polycrystalline silicon sheet cutting thickness, adopt small-diameter specific cutting steel wire, improve the structure of guided wheel slot, make it cutting steel wire carry out cooling, dwindling silicon-carbide particle in the separation, mortar of guided wheel slot is that particle diameter is at the multiple edge body of 8.2-8.6 micron, by the thickness that supports the use to reduce solar silicon wafers of these three kinds of technical schemes, and can not make the tensile strength of cutting steel wire diminish, not easy fracture.
The technical scheme that the present invention takes is as follows:
A kind of method that reduces solar energy polycrystalline silicon sheet cutting thickness, it is characterized in that: cutting steel wire employing diameter is the abnormity cutting steel wire of 110～115 microns, on the outer surface of described abnormity cutting steel wire, be provided with non-round recessed, the separation of guide wheel upper block groove be in 320～330 microns, mortar silicon-carbide particle to adopt particle diameter be the multiple edge body of 8.2-8.6 micron, the shape of cross section of described guided wheel slot is isosceles trapezoid or equilateral triangle, and on the two sides of guided wheel slot, edge is circumferentially with excessive stock tank.
Further, described non-round recessed shape of cross section is triangle, trapezoidal or rectangle.
Further, described non-round recessed is arranged on the outer surface of steel wire in the shape of a spiral.
Further, described non-round recessed is set in qually spaced on the outer surface of steel wire.
Further, the shape of cross section of described excessive stock tank is isosceles trapezoid or equilateral triangle.
Due to some non-round recesseds being set on steel wire, when mortar is when steel wire in rapid movement contacts, multiple edge body silicon-carbide particle in mortar just falls in the non-round recessed that is distributed in steel wire surface, under the cohesive action of silicon-carbide particle glue in mortar, be engaged in comparatively securely in the non-round recessed on steel wire outer surface, because cutting steel wire is in high-speed motion state, therefore the multiple edge body silicon-carbide particle that is arranged in non-round recessed on steel wire outer surface just becomes the trickle sawtooth of cutting silicon rod, multiple edge body silicon-carbide particle is uniformly distributed along cutting steel wire simultaneously, this has just realized the multitool cutting to silicon rod, thereby can significantly reduce the Cutting Drag of steel wire, for reducing steel wire diameter, cutting steel wire provides technology space.Through reality cutting, produce checking, the steel wire that adopts surface to be provided with non-round recessed is cut into slices to silicon rod, steel wire diameter can be reduced to 110 microns, it is strong that this cutting steel wire carries in mortar the ability of silicon-carbide particle, be more conducive to the raising of silicon rod cutting efficiency, the thickness of silicon chip can be down to 170 microns, the end face crudy of silicon chip is better than prior art simultaneously, the roughness of silicon chip machined surface is less than 0.05 micron, flatness is less than 0.05 micron, the diameter of this cutting steel wire is little, Cutting Drag is little, steel wire is easy fracture not, cutting efficiency is high, cutting gap is little, silicon wafer thickness can further reduce, mortar consumption is few, can reduce silicon rod cutting loss, improve piece rate, at the some excessive stock tanks of being circumferentially with of guided wheel slot, mortar can flow to along the stock tank that overflows the bottom of guided wheel slot, fully contact with the latter half of cutting steel wire, it is cooling that the latter half of cutting steel wire also has mortar like this, can not rupture because friction produces high temperature.Through measuring and calculating, if the thickness of polysilicon chip is by 180 microns, steel wire diameter is by 115 microns, the piece rate of silicon ingot can improve more than 6%, according to 500 ten thousand slices/month of the existing output of applicant, and 6 yuan of calculating of every silicon chip price, applicant monthly only piece rate individual event can increase by 300,000 silicon chips, can increase economic benefit 1,800,000, the minimizing of steel wire and mortar consumption also can further reduce production costs more, and economic benefit is very remarkable.
Accompanying drawing explanation:
Fig. 1 is the structural representation of abnormity cutting steel wire;
Fig. 2 is the A-A cutaway view in Fig. 1;
Fig. 3 is a kind of structural representation of guide wheel upper block groove;
Fig. 4 is that the B of Fig. 3 is to view;
Fig. 5 is the structural representation that abnormity cutting steel wire is combined with guided wheel slot;
In figure, 1-steel wire; The non-round recessed of 11-; 2-guide wheel; 21-guided wheel slot; The 22-stock tank that overflows.
The specific embodiment:
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described:
A kind of method that reduces solar energy polycrystalline silicon sheet cutting thickness, as shown in Fig. 1～Fig. 5, cutting steel wire employing diameter is the abnormity cutting steel wire 1 of 110～115 microns, the separation of guide wheel 2 upper block grooves 21 is 320～330 microns, in mortar, silicon-carbide particle employing particle diameter is the multiple edge body of 8.2-8.6 micron, on the outer surface of described abnormity cutting steel wire 1, be provided with non-round recessed 11, the shape of cross section of described guided wheel slot 21 is isosceles trapezoid, on the two sides of guided wheel slot 21, edge is circumferentially provided with the stock tank 22 that overflows equally spacedly, the shape of cross section of excessive stock tank 22 is isosceles trapezoid, described non-round recessed 11 shape of cross sections are triangle, described non-round recessed 11 is set in qually spaced on the outer surface of steel wire 1, cutting technique parameter is same as the prior art.
Claims (5)
1. a method that reduces solar energy polycrystalline silicon sheet cutting thickness, it is characterized in that: cutting steel wire employing diameter is the abnormity cutting steel wire (1) of 110～115 microns, on the outer surface of described abnormity cutting steel wire (1), be provided with non-round recessed (11), the separation of guide wheel (2) upper block groove (21) be in 320～330 microns, mortar silicon-carbide particle to adopt particle diameter be the multiple edge body of 8.2-8.6 micron, the shape of cross section of described guided wheel slot (21) is isosceles trapezoid or equilateral triangle, and on the two sides of guided wheel slot (21), edge is circumferentially with excessive stock tank (22).
2. reduce according to claim 1 the method for solar energy polycrystalline silicon sheet cutting thickness, it is characterized in that: the shape of cross section of described non-round recessed (11) is triangle, trapezoidal or rectangle.
3. reduce according to claim 1 the method for solar energy polycrystalline silicon sheet cutting thickness, it is characterized in that: described non-round recessed (11) is arranged on the outer surface of steel wire (1) in the shape of a spiral.
4. reduce according to claim 1 the method for solar energy polycrystalline silicon sheet cutting thickness, it is characterized in that: described non-round recessed (11) is set in qually spaced on the outer surface of steel wire (1).
5. reduce according to claim 1 the method for solar energy polycrystalline silicon sheet cutting thickness, it is characterized in that: the shape of cross section of described excessive stock tank (22) is isosceles trapezoid or equilateral triangle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310624157.7A CN103692564A (en) | 2013-11-28 | 2013-11-28 | Method for reducing cutting thickness of solar polycrystalline silicon chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310624157.7A CN103692564A (en) | 2013-11-28 | 2013-11-28 | Method for reducing cutting thickness of solar polycrystalline silicon chip |
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| CN103692564A true CN103692564A (en) | 2014-04-02 |
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| CN201310624157.7A Pending CN103692564A (en) | 2013-11-28 | 2013-11-28 | Method for reducing cutting thickness of solar polycrystalline silicon chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104802220A (en) * | 2015-04-27 | 2015-07-29 | 深圳市远达明反光器材有限公司 | Machining method of flexible solar panel, equipment and solar spike |
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2013
- 2013-11-28 CN CN201310624157.7A patent/CN103692564A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104802220A (en) * | 2015-04-27 | 2015-07-29 | 深圳市远达明反光器材有限公司 | Machining method of flexible solar panel, equipment and solar spike |
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Application publication date: 20140402 |