CN103619774A - 碱金属阻挡层 - Google Patents
碱金属阻挡层 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 229910052796 boron Inorganic materials 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 14
- 238000013508 migration Methods 0.000 claims abstract description 9
- 230000005012 migration Effects 0.000 claims abstract description 9
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 61
- 230000000903 blocking effect Effects 0.000 claims description 33
- 239000005357 flat glass Substances 0.000 claims description 29
- 125000004429 atom Chemical group 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 239000002585 base Substances 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 238000003475 lamination Methods 0.000 claims description 10
- 239000002346 layers by function Substances 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 4
- 238000006555 catalytic reaction Methods 0.000 claims description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000002209 hydrophobic effect Effects 0.000 abstract description 2
- 230000001699 photocatalysis Effects 0.000 abstract description 2
- 230000003667 anti-reflective effect Effects 0.000 abstract 1
- 239000011734 sodium Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052728 basic metal Inorganic materials 0.000 description 3
- 150000003818 basic metals Chemical class 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000002091 cationic group Chemical class 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000005348 self-cleaning glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
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Abstract
本发明涉及一种玻璃板,包括玻璃基材,和位于玻璃基材至少一部分表面上的叠层,叠层中包括阻挡层,形成对所述基材内所包含离子迁移的阻挡,这些离子特别是碱金属Na+或K+,所述阻挡层在叠层之中,位于所述基材的表面和至少一个顶层之间,在所述玻璃板之上的顶层具有防阳光、低发射、抗反射、光催化、疏水性及其它功能。所述阻挡层基本上由氧化硅或氮氧化硅组成,所述玻璃板的特征在于,所述氧化硅或氧氮化物还包括一种或多种选自由Al、Ga或B组成的组中的元素,并且特征还在于,在所述阻挡层中Si/X的原子比严格地低于92/8,X是所述元素,即Al、Ga和B的原子份额总和。
Description
本发明涉及包含玻璃基材的玻璃板(vitrage),包括叠层,该叠层在基材的至少部分表面上,其中叠层包括阻挡层,该阻挡层阻挡所述基材中含有的钠Na+,钾K+等类型碱金属离子的迁移。所述层与玻璃基材相邻(contigüe),或者被放置直接紧接玻璃基材,保护上层。
该玻璃板,特别地包括一个或多个具有防太阳(antisolaire)、低发射(low-e)、抗反射、光催化(自清洁玻璃板)或疏水性功能类型的功能层,即一层或一系列的层赋予玻璃板上述特殊性能。因此,还发现了其在回收利用太阳能的设备中的应用,包括如TCO(透明导电氧化物)类型的层,特别是在光伏电池(cellules)或太阳能收集器(collecteurs solaires)领域之中。
在玻璃板领域之中,所述玻璃板具有如上所述功能的层或者叠层,长期以来众所周知,可在玻璃基材表面和功能层之间加入至少一层所谓“阻挡”碱金属的层,其中,该功能层特别赋予玻璃板以所期望的性能。已知,所述层可以限制最初存在于玻璃基材之中的阳离子(尤其是碱金属型的阳离子),在整个使用寿命之中或者在玻璃板的加热阶段时,向上层(尤其是向功能层)迁移的扩散。已知,这种阳离子的迁移是人们熟知的导致功能层性能改变和退化的主要原因。
为了防止这种离子的迁移,氧化硅层、氮化硅层或氮氧化硅层得到了广泛的应用,因为它们十分有效而且利用起来不会很昂贵。如可参考专利申请US2009/0084438,其中公开了由氧化硅、氮化硅或氮氧化硅组成的层(特别见0048段),以达到阻止玻璃基材中的碱金属向TCO或银类型的活性上层迁移的目的。
然而,在大多数情况下,尤其是在玻璃板经受剧烈加热(淬火(trempe)、弯曲等),或者暴露在潮湿区域的情况下,为了使阻挡层在使用寿命期间内具有阻挡效果,唯一的方法就是在基材和受保护的上层之间沉积相当厚度的材料。例如,现在可以计算出,在功能性玻璃板经受大约620℃温度退火10分钟的处理之后,为了确保叠层中TiO2外层的光催化性能,必须通过常规溅射技术沉积的SiO2阻挡层的实际厚度应该是大约50nm。
考虑到氧化硅、氮化硅或氮氧化硅层的相对较低的沉积速度,具有更好的阻挡性能并且沉积厚度更薄的阻挡层是十分有利的。
本发明的目的是提供具有阻挡层的玻璃板,其中阻挡层具有上述性质。
更具体地,本发明涉及具有玻璃基材的玻璃板,包括在基材的至少部分表面上的叠层,其中包括阻挡层,该阻挡层阻挡所述基材内所含离子的迁移,特别是碱金属型离子Na+或K+的迁移,所述阻挡层置于叠层之中,位于所述基材的表面和至少一个顶层之间,所述顶层赋予所述玻璃板以防阳光、低发射、抗反射、光催化或疏水性等类型功能,所述阻挡层主要由氧化硅或由氮氧化硅组成,所述玻璃板的特征在于,所述氧化硅或氧氮化硅还包括一种或多种选自由Al、Ga或B组成的组中的元素,并且特征还在于Si/X的原子比严格地低于92/8,X是所述Al、Ga和B元素的原子份额总和。
根据本发明的优选方案,任选,其在合适的情况下明显地可以互相结合下述:
-Si/X原子比率低于92/8,高于70/30,优选大于80/20,
-其中Si/X原子比率低于90/10,优选低于88/12,
-元素X是铝,
-元素X是镓,
-元素X是硼,
-阻挡层包括至少两种选自硼、镓和铝的元素,
-阻挡层是氧化硅,
-阻挡层是氮氧化硅,
-阻挡层是氮氧化硅,其中N/O原子比率大于10/90,优选大于20/80。
本发明还涉及一种玻璃板,其还具有一个与前述第一阻挡层相同的第二层,但是位于所述功能层的上方。
所述第二层的可能的实施方案:
-实质上由氧化硅或氮氧化硅组成,包括一种或多种选自由Al,Ga或B组成的组中的元素,其中Si/X原子比率严格低于92/8,
-所述第二层的Si/X原子比率低于90/10,优选低于88/12,
-Si/X原子比率低于90/10,优选大于88/12,
-Si/X原子比率大于80/20,
-元素X是铝,
-元素X是镓,
-元素X是硼,
-第二层包括至少两种选自硼、镓和铝的元素,
-第二层是氧化硅,
-第二层是氮氧化硅,例如,其中N/O原子比率大于10/90,优选大于20/80。
实施例
准备用作阴极的2个靶材,其中一个由SiO2,另一个由Al2O3或B2O3制成,在室中通过氩气等离子体共溅射。根据本领域的现有技术,在沉积之前,在室内形成真空,直到余值达到0.5毫帕(mPa)。
用于靶材溅射的气体的流速和压力,以及应用在每一靶材上的功率,如下表1所示。
表1
SiAlO表示硅和铝的氧化物的阻挡层,SiBO表示硅和硼的氧化物的阻挡层。SiXO表示硅和元素X的氧化物的阻挡层,X是铝或硼。
由于在基材表面的各点之间的变化,以及两个靶材之间的区别(一个是由SiO2制成,另一个由Al2O3或B2O3制成),Si/X的比率在基材的长度范围上变化。
调整沉积时间以达到大约100纳米的层厚度。
在第一阻挡层上,根据传统方法在磁控(磁控管)溅射室中沉积AZO型透明导电氧化物(TCO)功能层,其由铝掺杂ZnO(2wt%氧化铝)构成。所述功能层的厚度为大约200nm。
下表2总结了各种实施的实施例。
实施例 | 叠层 | X | Si/X(原子) | Si/X(重量) |
1 | 玻璃SiXO/AZO | - | - | - |
2 | 玻璃/AZO/SiXO | Al | 96/4 | 96/4 |
3 | 玻璃/AZO/SiXO | Al | 82/18 | 82/18 |
4 | 玻璃/AZO/SiXO | B | 95.5/4.5 | 98.5/1.5 |
5 | 玻璃/AZO/SiXO | B | 87/13 | 95.5/4.5 |
表2
覆有由阻挡层和TCO层组成的叠层的基材随后在600℃经受1小时的热处理,以校准各种合成阻挡层的性能。
在所有的实施例之中,各种样品从表面向下到玻璃基材依次为表面/AZO(200mm)/SiXO(100nm)/玻璃的钠离子浓度分布曲线,是通过常规的二次离子质谱法(SIMS)测量。
各种样品得到的结果展示在附图1(X=Al)和附图2(X=B)中。
从这些附图中可见,在根据本发明的氧化硅阻挡层包括大量的铝或硼(特别是铝或硼的原子含量,相对于阻挡层中硅原子的总量,高于8%、9%或甚至10%)的情况下,沉积在叠层表面的AZO层被保护免受碱金属侵蚀的作用更好。特别地,根据从实施例获得的曲线,相对于现在使用的由SiO2制成的阻挡层,可能估计利用本发明的保护层之后在AZO功能层中钠的浓度可以除以10。
在以相同方式掺杂的由氮氧化硅(N/O原子比率接近1)组成的阻挡层进行同样的附加实验,取得了实质上相同的结果。
在前面实施例中详细说明了本发明。应该理解的是,本领域技术人员能够对本发明进行各种变化,而不脱离权利要求所限定的本专利的范围。
Claims (14)
1.具有玻璃基材的玻璃板,包括在基材的至少部分表面上的叠层,其中包括阻挡层,该阻挡层阻挡所述基材内所含离子的迁移,特别是碱金属型离子Na+或K+,所述阻挡层置于叠层之中,位于所述基材的表面和至少一个顶层之间,所述顶层赋予所述玻璃板以防阳光、低发射、抗反射、光催化或疏水性等类型功能,所述阻挡层基本上由氧化硅或由氮氧化硅组成,所述玻璃板的特征在于,所述氧化硅或氧氮化硅还包括一种或多种选自由Al、Ga或B组成的组中的元素,并且特征在于在所述阻挡层中Si/X的原子比严格地低于92/8,X是所述Al、Ga和B元素的原子份额总和。
2.如权利要求1的玻璃板,其中Si/X原子比率低于92/8且高于80/20。
3.如权利要求1或2的玻璃板,其中Si/X原子比率低于90/10,优选低于88/12。
4.如之前权利要求之一的玻璃板,其中元素X是铝。
5.如权利要求1-3之一的玻璃板,其中元素X是镓。
6.如权利要求1-3之一的玻璃板,其中元素X是硼。
7.如权利要求1-3之一的玻璃板,包括至少两种选自硼、镓和铝的元素。
8.如之前权利要求之一的玻璃板,其中阻挡层是氧化硅。
9.如权利要求1-7之一的玻璃板,其中阻挡层是氮氧化硅。
10.如之前权利要求9的玻璃板,其中阻挡层是氮氧化硅,其中N/O原子比率大于10/90,优选大于20/80。
11.如之前权利要求之一的玻璃板,还包括位于所述功能层的上方的覆盖层,覆盖层基本上由氧化硅或由氮氧化硅组成,包括一种或多种选自由Al、Ga或B组成的组中的元素,其中Si/X原子比率严格低于92/8。
12.如权利要求11的玻璃板,其中Si/X原子比率低于90/10,优选低于88/12。
13.如权利要求11或12的玻璃板,其中覆盖层是氧化硅。
14.如权利要求11或12的玻璃板,其中覆盖层是氮氧化硅。
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FR1154698A FR2975989B1 (fr) | 2011-05-30 | 2011-05-30 | Couche barriere aux alcalins |
FR1154698 | 2011-05-30 | ||
PCT/FR2012/051166 WO2012164206A1 (fr) | 2011-05-30 | 2012-05-24 | Couche barriere aux alcalins |
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EP (1) | EP2714609B1 (zh) |
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US20140199552A1 (en) | 2014-07-17 |
EA201391770A1 (ru) | 2014-03-31 |
EP2714609B1 (fr) | 2018-01-10 |
EA024228B1 (ru) | 2016-08-31 |
FR2975989B1 (fr) | 2014-04-25 |
BR112013029198B1 (pt) | 2020-09-15 |
WO2012164206A1 (fr) | 2012-12-06 |
EP2714609A1 (fr) | 2014-04-09 |
BR112013029198A2 (pt) | 2017-04-18 |
PL2714609T3 (pl) | 2018-06-29 |
KR101968777B1 (ko) | 2019-04-12 |
FR2975989A1 (fr) | 2012-12-07 |
KR20140026539A (ko) | 2014-03-05 |
US8828564B2 (en) | 2014-09-09 |
JP2014516909A (ja) | 2014-07-17 |
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