CN103579323B - 一种宽元胞绝缘栅双极型晶体管 - Google Patents
一种宽元胞绝缘栅双极型晶体管 Download PDFInfo
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- CN103579323B CN103579323B CN201310568187.0A CN201310568187A CN103579323B CN 103579323 B CN103579323 B CN 103579323B CN 201310568187 A CN201310568187 A CN 201310568187A CN 103579323 B CN103579323 B CN 103579323B
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- igbt
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- bipolar transistor
- gate bipolar
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310568187.0A CN103579323B (zh) | 2013-11-14 | 2013-11-14 | 一种宽元胞绝缘栅双极型晶体管 |
Applications Claiming Priority (1)
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CN201310568187.0A CN103579323B (zh) | 2013-11-14 | 2013-11-14 | 一种宽元胞绝缘栅双极型晶体管 |
Publications (2)
Publication Number | Publication Date |
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CN103579323A CN103579323A (zh) | 2014-02-12 |
CN103579323B true CN103579323B (zh) | 2016-01-20 |
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CN201310568187.0A Active CN103579323B (zh) | 2013-11-14 | 2013-11-14 | 一种宽元胞绝缘栅双极型晶体管 |
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CN (1) | CN103579323B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110752257B (zh) * | 2019-10-29 | 2020-11-27 | 电子科技大学 | 一种mos栅控晶闸管及其制造方法 |
CN114005743B (zh) * | 2021-10-13 | 2022-08-30 | 华中科技大学 | 一种方片半导体脉冲功率开关及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5451531A (en) * | 1992-03-18 | 1995-09-19 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating an insulated gate semiconductor device |
JP3586193B2 (ja) * | 1998-04-27 | 2004-11-10 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CN101728382A (zh) * | 2008-10-21 | 2010-06-09 | 北大方正集团有限公司 | 一种功率器件芯片 |
CN103066104A (zh) * | 2012-12-28 | 2013-04-24 | 上海贝岭股份有限公司 | 具有终端保护结构的半导体功率器件 |
-
2013
- 2013-11-14 CN CN201310568187.0A patent/CN103579323B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5451531A (en) * | 1992-03-18 | 1995-09-19 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating an insulated gate semiconductor device |
JP3586193B2 (ja) * | 1998-04-27 | 2004-11-10 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CN101728382A (zh) * | 2008-10-21 | 2010-06-09 | 北大方正集团有限公司 | 一种功率器件芯片 |
CN103066104A (zh) * | 2012-12-28 | 2013-04-24 | 上海贝岭股份有限公司 | 具有终端保护结构的半导体功率器件 |
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CN103579323A (zh) | 2014-02-12 |
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Owner name: INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERIN Effective date: 20140730 |
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Effective date of registration: 20140730 Address after: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant after: University of Electronic Science and Technology of China Applicant after: Institute of Electronic and Information Engineering In Dongguan, UESTC Address before: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant before: University of Electronic Science and Technology of China |
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