CN103576242B - Manufacturing method for light-blocking type micro-electro-mechanical variable light attenuator - Google Patents
Manufacturing method for light-blocking type micro-electro-mechanical variable light attenuator Download PDFInfo
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- CN103576242B CN103576242B CN201310511425.4A CN201310511425A CN103576242B CN 103576242 B CN103576242 B CN 103576242B CN 201310511425 A CN201310511425 A CN 201310511425A CN 103576242 B CN103576242 B CN 103576242B
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Abstract
The invention discloses a manufacturing method for a light-blocking type micro-electro-mechanical variable light attenuator. The method is based on micro-nano machining technology, bulk silicon machining technology is adopted to manufacture a fixed light-blocking board and a movable light-blocking board of the variable light attenuator, light-blocking materials are deposited on the fixed light-blocking board and the movable light-blocking board, so that the blocking and limiting effects on light beams are achieved; a light-permeable hole is formed in the fixed light-blocking board and is used for constraining the size of a light spot and limiting the diffraction of light. Technologies such as photoetching and corrosion are used for manufacturing the movable light-blocking board of the light attenuator so as to enable the movable light-blocking board to be capable of carrying out linear motion under the action of external driving force, and accurate adjustment of transmitted optical energy is achieved through the control over the position of the movable light-blocking board; finally, wafer level bonding integrates the fixed light-blocking board and the movable light-blocking board of the variable light attenuator, and controllable adjustment of the transmitted optical energy is achieved. By means of the method, the ordinary micro-nano machining method is adopted, technologies are mature and reliable, manufacturing accuracy is high, cost can be greatly reduced, and the manufacturing method for the light-blocking type micro-electro-mechanical variable light attenuator is suitable for scale production.
Description
Technical field
The present invention relates to MEMS to manufacture and engineering field, particularly relate to a kind of method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator.
Background technology
Optical attenuator, as the components and parts in optical fiber communication, can, under external drive (machinery, electric power, magnetic force etc.) effect, by the change of optical element motion or optical states, realize regulating the intensity of light signal.Optical attenuator is one of optical passive component important in light communication system, controlled decay can be produced in optical-fiber network, realize that the gain of light is smooth well with other device matching, dynamic gain equalization and through-put power balanced, have very important application in fields such as optical-fibre communications, optical fiber analog signal transmission, optical sensor analog imaging and optical fiber measurements.
Variable optical attenuator damping capacity can change, can initiatively accurate balance luminous power, realizes process in real time to signal, and development comparatively has advantage.It is large that traditional variable optical attenuator also exists volume, and the shortcomings such as cost is high, not easy of integration, are generally only suitable for single channel damped manner.Along with application and the potential demand of Reconfigurable Optical Add/drop Multiplexer that can upgrade flexibly of the development of optical communication network, particularly wavelength-division multiplex technique, more and more need the variable optical attenuator that port number is many and volume is little.For meeting the demand of optical communication better, VOA is just integrated towards height, miniaturization, low cost future development.Traditional mechanical system can not address these problems, has thus occurred the MEMS variable optical attenuator based on micro-nano technology technology.In MEMS VOA performance except keeping the optical property of conventional art VOA, also have that attenuation range is large, driving voltage is low, volume is little, be easy to that hyperchannel is integrated, fast response time and cost performance advantages of higher, be with a wide range of applications.
Different according to optical attenuation mechanism, micromachine variable light attenuator can be divided into two types: reflective and light-barrier type.Reflective micromachine variable light attenuator is generally utilize electrostatic to drive mirror deflection or distortion that the luminous power reflexed in output optical fibre is changed, there are higher adjustable attenuation precision and reaction time faster, but its operating voltage is high, and dynamic attenuation range is little, and insertion loss is larger.
In addition, reflective micromachine variable light attenuator needs complicated optical fiber align light path.Light-barrier type variable light attenuator adopts miniature baffle plate to block transmitting optical signal to realize luminous energy decay, can realize dynamic attenuation on a large scale, low insertion loss.Light-barrier type variable light attenuator can adopt multiple micromachining technology to realize, at present both at home and abroad report mainly contain surface processing technique, LIGA technology etc., these process technology techniques are comparatively complicated, and the yield rate of device production is very low at present, realizes industrialization and also there is technical difficulty.Therefore develop a kind of technique simple, high make precision and yield rate, low cost the method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator to promoting the practical significant of MEMS variable optical attenuator.
Summary of the invention
(1) technical issues that need to address
The shortcoming large for conventional variable optical attenuator volume, cost is high, not easy of integration, the problem that existing light-barrier type variable light attenuator processing technology is complicated, yield rate is low, the present invention proposes a kind of production program of light-barrier type micro-electro-mechanvariable variable optical attenuator, adopt micro-nano technology fabrication techniques, technique is simple, making precision is high, easy of integration.These technological breakthroughs substantially increase making precision and the yield rate of device, effectively reduce cost of manufacture, are conducive to large-scale production.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides a kind of method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator, the method comprises the bonding of the making of fixed barriers and active catch tabula rasa, fixed barriers and active catch tabula rasa;
Wherein, the making of fixed barriers comprises:
At front photoetching, the etching formation groove structure of substrate I;
The back-etching of substrate I forms light hole, and described light hole is connected with groove structure;
The front deposit light-locking material of substrate I, forms light shield layer, completes the making of fixed barriers;
The making of described active catch tabula rasa comprises:
The two-sided deposit dielectric film of substrate II;
The dielectric film at the etching substrate II back side, forms etched hole;
The front deposit light-locking material of substrate II, and etch light-locking material, form light-blocking structure and wire pattern;
According to described light-blocking structure and wire pattern etch media film and substrate II front successively, form active catch tabula rasa elastic construction;
The etched hole place at the back side of substrate II carries out wet etching, forms groove structure;
Etch bottom described groove structure and form light hole, make active catch tabula rasa elastic construction unsettled, complete the making of active catch tabula rasa;
The bonding of described fixed barriers and active catch tabula rasa comprises:
Respectively at the substrate II front deposit bonding material of the substrate I back side of the fixed barriers structure made and active catch light plate structure, bonding structure is formed by photoetching, etching technics, substrate I and substrate II are aimed at, make light hole in fixed barriers just to the light hole of active catch tabula rasa, then under certain bonding temperature, pressure, carry out bonding, complete the making of variable optical attenuator.
(3) beneficial effect
As can be seen from technique scheme, the invention has the beneficial effects as follows:
1. the invention provides a kind of method for making of light-barrier type variable light attenuator, whole making step only needs four pieces of mask plates, processing step is simple, what adopted is all conventional MEMS micro-nano processing method, does not need process equipment expensive consuming time, technology maturation, cost is low, making precision is high, is conducive to realizing high finished product rate and makes, be applicable to large-scale production.
2. the present invention adopts the integrated approach of fixing shadow shield and movable MEMS devices, effectively controls spot size, reduces device size, is conducive to cmos device integrated.
3. the present invention proposes and make groove structure in fixed barriers and movable light shield plate, be conducive to limit fibre, simplify and aim at and assembling, substantially increase yield rate.
Accompanying drawing explanation
Fig. 1 shows the structural drawing of a kind of light-barrier type micro-electro-mechanvariable variable optical attenuator that the present invention proposes;
Fig. 2 shows the vertical view of active catch tabula rasa elastic construction in the present invention;
Fig. 3 (a)-Fig. 3 (d) shows the method for making process chart of the fixed barriers of the light-barrier type micro-electro-mechanvariable variable optical attenuator that the present invention proposes;
Fig. 4 (a)-Fig. 4 (f) shows the process flow diagram of the method for making of the active catch tabula rasa of the light-barrier type micro-electro-mechanvariable variable optical attenuator that the present invention proposes.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Fig. 1 shows the structural drawing of a kind of light-barrier type micro-electro-mechanvariable variable optical attenuator that the present invention proposes.As shown in Figure 1, described light-barrier type micro-electro-mechanvariable variable optical attenuator specifically comprises: fixed barriers and active catch tabula rasa, described fixed barriers and active catch tabula rasa are made by substrate I and substrate II respectively, and fixed barriers and active catch tabula rasa bonding are made into variable optical attenuator.Described substrate I comprises silicon wafer, the SOI sheet of silicon oxide-containing middle layer and single-crystal silicon device layer, glass sheet or other conventional substrate base; Described substrate II comprises the SOI sheet of silicon wafer or silicon oxide-containing middle layer and single-crystal silicon device layer.
Wherein, the front of substrate I is manufactured with fixed gear tabula rasa groove structure 4, the bottom of groove structure 4 has fixed barriers light hole 7, extends to the back side of substrate I; In the front of described substrate I, the surface coverage of the surface of groove structure 4 and light hole 7 has one deck shading film layer 8, and it is light-locking material.
Substrate II comprises body silicon 22 from bottom to up successively, buried oxide layer 21 and top layer silicon 20, and body silicon 22 lower surface has groove structure 17, and the bottom of groove structure 17 has light hole 18, and it extends to the lower surface of top layer silicon 20; Top layer silicon 20 is etched with active catch tabula rasa elastic construction 14, active catch tabula rasa elastic construction 14 is by the folded beam Structure composing with light-blocking structure, active catch tabula rasa elastic construction 14 is deposited with film 2 and light shield layer 8, film 2 is for the insulation between light shield layer 8 and active catch tabula rasa elastic construction 14.
Fig. 2 shows the vertical view of the tabula rasa of active catch described in the present invention elastic construction.As shown in Figure 2, described active catch tabula rasa elastic construction is folded beam version, and Fig. 1 is the sectional view through dotted line shown in Fig. 2.After the buried oxide layer 21 of described active catch tabula rasa elastic construction 14 lower surface is corroded, described active catch tabula rasa elastic construction 14 relative to mask oxide layer 21 and body silicon 22 unsettled, be specially folded beam structure, and it just has a light-blocking structure 9 to place above light hole 18, supported by folded beam part, under the driving of external force, can translation be there is in this light-blocking structure 9, namely aim at light hole 18 or offset from light hole 18, it is when aiming at light hole 18, the light hole 7 of fixed barriers lower surface covers by light shield layer 8 on light-blocking structure 9 completely, to block the light entered in the input optical fibre of light hole 7, when it is from after translation directly over light hole 18, light hole 7 can be opened, make the light in input optical fibre be incident to light hole 18 by light hole 7, and then enter the output optical fibre of light hole 18 opposite side.
Visible, described active catch tabula rasa elastic construction, under external force drives, moves into or shifts out, passing through of all or part of blocking-up transmission light between input optical fibre and output optical fibre, regulates the transmission light energy entering output optical fibre.
The present invention proposes a kind of light-barrier type micro-electro-mechanvariable variable optical attenuator method for making.Utilize fixed barriers and the active catch tabula rasa of micro-nano technology fabrication techniques variable optical attenuator,
Fig. 3 (a) ~ Fig. 3 (d) shows the method for making process chart of the fixed barriers of the light-barrier type micro-electro-mechanvariable variable optical attenuator proposed in the present invention.As shown in Fig. 3 (a) ~ Fig. 3 (d), this concrete manufacturing process comprises:
Fixed barriers prepared by step 1, selection substrate 1, substrate 1 can be silicon wafer, the SOI sheet of silicon oxide-containing middle layer and single-crystal silicon device layer, glass sheet or other conventional substrate base, at the LPCVD of the low-pressure chemical vapor phase deposition on the front and back dielectric film 2 of substrate 1, dielectric film 2 can be silicon nitride film or silicon oxide film, as the mask of insulation course and wet etching substrate II, and dielectric film 2 to silicon chip 1 front carries out photoetching, dry etching forms etched hole, as shown in Fig. 3 (a);
Step 2, adopt the method for the corrosion of KOH or TMAH anisotropic wet or anisotropy reacting ion dry etching to etch substrate I in described etched hole, form groove structure 4, for aiming at, restriction and fixing input optical fibre, as shown in Fig. 3 (b);
Step 3, in the surface of groove structure 4 and silicon chip 1 front remaining film 2 front electron beam evaporation layer of metal 5, metal 5 can be aluminium or chromium, be in the light as back-etching the cutoff layer in hole, and play conductive force simultaneously, to ensure that wafer can be effectively cooled in etching process, as shown in Fig. 3 (c);
Step 4, the film 2 at substrate 1 back side carried out to photoetching, etching forms etched hole, adopt dry etching method, silicon chip 1 back side of exposing from described etched hole etches, until etch into the metal level 5 in silicon chip 1 front, formed light hole 7, this light hole 7 for controlling spot size, diffraction-limited effect, and for aiming at limit fibre, convenient for assembly; As shown in Fig. 3 (c);
Step 5, removal metal level 5 and two-side film membrane 2;
Step 6, on the substrate 1 deposition film form light blocking layer 8, light blocking layer 8 can be the metals such as metal oxide, aluminium, gold such as indium tin oxide target film (ITO) or other to incident light, there is the membraneous material of high reflectance, for blocking input light, as shown in Fig. 3 (d), complete the making of fixed barriers.
Fig. 4 (a) ~ Fig. 4 (f) shows the process flow diagram of the method for making of the active catch tabula rasa of the light-barrier type micro-electro-mechanvariable variable optical attenuator proposed in the present invention.As shown in Fig. 4 (a) ~ Fig. 4 (f), the concrete manufacture craft of this active catch tabula rasa comprises:
Step 1, using (100) crystal orientation SOI sheet as the substrate II preparing movable light shield plate, comprise top layer silicon 20, buried oxide layer 21 and body silicon 22, at SOI sheet low-pressure chemical vapor phase deposition LPCVD dielectric film 2 on the front and back, film 2 can be silicon dioxide or silicon nitride, photoetching, etching are carried out to the dielectric film 2 at the SOI sheet back side, forms etched hole, as shown in Fig. 4 (a);
Step 2, on the film 2 in SOI sheet front electron beam evaporation metal level 8, this metal level can be Cr/Au; Then be mask with photoresist, wet etching metal level 8 forms light-blocking structure and wire pattern 13, and described light-blocking structure figure is used for reflection and blocks incident ray, and wire pattern is used for realizing electric interconnects, as shown in Fig. 4 (b);
Step 3, carry out photoetching, successively etch nitride silicon thin film 2, top layer silicon 20, buried oxide layer 21 according to described light-blocking structure and wire pattern 13 pairs of SOI sheet fronts, form active catch tabula rasa elastic construction 14, as shown in Fig. 4 (c); Described active catch tabula rasa elastic construction 14 is folded beam version, and this folded beam just has light-blocking structure 9 to light hole place;
Step 4, SOI sheet front formed active catch tabula rasa elastic construction 14 on electron beam evaporation layer of metal 5, metal 5 can be aluminium or chromium, as the cutoff layer of back-etching light hole, and play conductive force, to ensure that wafer can be effectively cooled in etching process simultaneously;
The method of step 5, employing KOH wet etching, exposes the position etching body silicon 22 of body silicon 22, forms groove structure 17, for aiming at, limiting and fixing output optical fibre, as shown in Fig. 4 (d) after etching certain hour from the SOI sheet back side;
Step 6, from the groove structure 17 dry etching body silicon 22 at the SOI sheet back side until metal level 5, form light hole 18, as shown in Fig. 4 (e);
Step 7, employing HF remove the buried oxide layer 21 active catch tabula rasa elastic construction 14 from the back side, remove cutoff layer metal 5 from front, releasing structure makes active catch tabula rasa elastic construction unsettled, forms folded beam, as shown in Fig. 4 (f), complete the making of active catch tabula rasa.Utilize MEMS technology releasing sacrificial layer in this step, make structural sheet unsettled, thus become movable physical construction, figure is folded beam, and folded beam end two ends are connected to the non-etched portions of top layer silicon, and be sectional view here, figure opposite side coupling part does not draw.Make active catch tabula rasa unsettled by release, form movable structure, under driving in external force, move between input optical fibre and output optical fibre, passing through of all or part of blocking-up transmission light, regulate the transmission light energy entering output optical fibre.
Respectively at the substrate I back side and substrate II front deposit bonding material, annular bonding structure 23 is formed with peripheral corresponding position, substrate II front by photoetching, etching technics are peripheral at the substrate I back side, litho machine is aimed at substrate I and substrate II, make light hole in fixed barriers just to the light hole of active catch tabula rasa, then bonder is put into, under certain bonding temperature, pressure conditions, carry out bonding, complete the making of variable optical attenuator.Described bonding material is epoxy resin, photoresist, gold or tin, and described bonding temperature, pressure are determined by selected bonding material.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a method for making for light-barrier type micro-electro-mechanvariable variable optical attenuator, the method comprises the bonding of the making of fixed barriers and active catch tabula rasa, fixed barriers and active catch tabula rasa;
Wherein, the making of fixed barriers comprises:
At front photoetching, the etching formation groove structure of substrate I;
The back-etching of substrate I forms light hole, and described light hole is connected with groove structure;
The front deposit light-locking material of substrate I, forms light shield layer, completes the making of fixed barriers;
The making of described active catch tabula rasa comprises:
The two-sided deposit dielectric film of substrate II;
The dielectric film at the etching substrate II back side, forms etched hole;
The front deposit light-locking material of substrate II, and etch light-locking material, form light-blocking structure and wire pattern;
Etch dielectric film and the substrate II front in substrate II front according to described light-blocking structure and wire pattern successively, form active catch tabula rasa elastic construction;
The etched hole place at the back side of substrate II carries out wet etching, forms groove structure;
Form light hole bottom the described groove structure of the back side formation of etching substrate II, make active catch tabula rasa elastic construction unsettled, complete the making of active catch tabula rasa;
The bonding of described fixed barriers and active catch tabula rasa comprises:
Respectively at the substrate II front deposit bonding material of the substrate I back side of the fixed barriers structure made and active catch light plate structure, bonding structure is formed by photoetching, etching technics, substrate I and substrate II is aimed at, make light hole in fixed barriers just to the light hole of active catch tabula rasa, then under certain bonding temperature, pressure, carry out bonding, complete the making of variable optical attenuator.
2. the method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator according to claim 1, is characterized in that, described substrate I comprises silicon wafer, the SOI sheet of silicon oxide-containing middle layer and single-crystal silicon device layer or glass sheet; Described substrate II comprises the SOI sheet of silicon wafer or silicon oxide-containing middle layer and single-crystal silicon device layer.
3. the method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator according to claim 1, is characterized in that, when making fixed barriers, adopts the corrosion of KOH or TMAH anisotropic wet or anisotropy reacting ion dry etching to form groove structure; Described light hole adopts dry etching to be formed, and it is for controlling spot size, diffraction-limited effect and aiming at limit fibre.
4. the method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator according to claim 1, is characterized in that, during creative activity light barrier, adopts the method for HF wet etching or anisotropy reacting ion dry etching, the dielectric film at the etching substrate II back side; Adopt peel off, the method for wet etching or dry etching, etch described light-locking material, form light-blocking structure and wire pattern; Adopt dielectric film and substrate II front described in anisotropy reacting ion dry etching, form active catch tabula rasa elastic construction; Adopt KOH or the TMAH anisotropic wet corrosion substrate II back side, form groove structure; Adopt bottom anisotropy reacting ion dry etching groove structure, form light hole.
5. the method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator according to claim 1, is characterized in that, described dielectric film is silicon nitride film or silicon oxide film, as the mask of insulation course and wet etching substrate II.
6. the method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator according to claim 1, is characterized in that, described light-locking material is metal oxide or metal.
7. the method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator according to claim 1, is characterized in that: described bonding material is epoxy resin, photoresist, gold or tin.
8. the method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator according to claim 1, is characterized in that: described bonding temperature, pressure are determined by selected bonding material.
9. the method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator according to claim 1, is characterized in that: described active catch tabula rasa elastic construction can issue life in external force driving and move, to block or to open the light hole in fixed barriers.
10. the method for making of light-barrier type micro-electro-mechanvariable variable optical attenuator as claimed in claim 1, it is characterized in that: described active catch tabula rasa elastic construction is the folded beam structure with light-blocking structure, and described light-blocking structure is in fixed barriers on light hole and active catch tabula rasa between light hole.
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| CN105058367B (en) * | 2015-08-20 | 2017-03-01 | 宁波大学 | A kind of processing technology of four-degree-of-freedom piezoelectric microgripper |
| JP6814076B2 (en) * | 2017-03-14 | 2021-01-13 | 浜松ホトニクス株式会社 | Optical module |
| CN107285269A (en) * | 2017-06-23 | 2017-10-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Mems device and preparation method thereof |
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| US6351329B1 (en) * | 1999-10-08 | 2002-02-26 | Lucent Technologies Inc. | Optical attenuator |
| KR100393193B1 (en) * | 2001-09-29 | 2003-07-31 | 삼성전자주식회사 | Variable optical attenuator having waveguides and MEMS actuator |
| JP3673947B2 (en) * | 2002-06-27 | 2005-07-20 | 日本航空電子工業株式会社 | Micro movable device |
| CN101196595A (en) * | 2007-07-03 | 2008-06-11 | 华东师范大学 | Production method for electric-controlled adjustable optical attenuator chip |
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