CN102928977A - Manufacturing method for micro electro mechanical system (MEMS) micromirror bistable state structure and optical switch - Google Patents
Manufacturing method for micro electro mechanical system (MEMS) micromirror bistable state structure and optical switch Download PDFInfo
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- CN102928977A CN102928977A CN2012104099835A CN201210409983A CN102928977A CN 102928977 A CN102928977 A CN 102928977A CN 2012104099835 A CN2012104099835 A CN 2012104099835A CN 201210409983 A CN201210409983 A CN 201210409983A CN 102928977 A CN102928977 A CN 102928977A
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Abstract
The invention discloses a manufacturing method for a micro electro mechanical system (MEMS) micromirror bistable state structure. The method comprises the following steps of: depositing a first-layer dielectric thin film material on the front of a high-impedance silicon slice and etching; evaporating a first-layer metal thin material and etching to form a metal layer; sputtering a second-layer metal film and etching to form a micromirror surface; performing deep silicon etching on the back of the silicon slice to form a cavity; performing deep silicon etching on the front of the high-impedance silicon slice; and after etching, cooling to room temperature to form the initial state of the bistable state structure. An optical switch which has the MEMS micromirror bistable state structure which is manufactured by the method comprises the bistable state structure and a drive structure; and the bistable state structure is arranged above the drive structure. The manufacturing process is simple and practicable; the micromirror surface, a straight beam drive arm, and a foundation are integrally formed; and high manufacturing accuracy can be guaranteed; and the optical switch is convenient to operate, high in response speed and reliability and low in energy consumption, and two states are switched by solenoid drive.
Description
Technical field
The invention belongs to the MEMS (micro electro mechanical system) field, relate to a kind of method for making of MEMS micro mirror bistable structure and comprise the photoswitch of bistable structure obtained by this method.
Background technology
MEMS(Micro-electro-mechanical systems), it is MEMS (micro electro mechanical system), to utilize the produced various microdevices of micro-processing technology or system, mainly comprise micro mechanism, microsensor, miniature actuator and corresponding treatment circuit etc., it is to merge multiple Micrometer-Nanometer Processing Technology, and the high-tech front subject that grows up on the basis of the newest fruits of application modern information technologies.With respect to traditional machinery, the MEMS device size is less, the maximum 1cm that is no more than, even only be several μ m; So adopt and the similar generation technique of integrated circuit (IC), utilize mature technology and technique in the IC production, to produce in batches, cost performance can increase substantially with respect to tradition " machinery " manufacturing technology.The MEMS device is by the semiconductor fabrication techniques of maturation, and the materials such as employing silicon promote the flourish of new microization sensor miscellaneous and driver as carrier.Along with the microminiaturization of device, the MEMS technology is widely used in micro projector, photoswitch, Variable Optical Attenuator, micro spectrometer, micro-optical probe etc.
Photoswitch wherein is a kind of one or more optional transmit pories that have, and is the light signal in optical transmission line or the integrated optical circuit is changed or the optical device of logical operation mutually.Along with the fast development of Networks of Fiber Communications, optical passive component is comprised the demand of photoswitch is increasing, wherein photoswitch is used for rearrangement of optical network or increase its reliability.At present research is used in the MEMS technology and makes above the photoswitch, can improve the performance of photoswitch, reduces simultaneously volume, the cost of device, and more of paramount importance is that it can be made in photoswitch on the silicon chip, can the large-scale integrated array of photoswitch.
At present photoswitch has two kinds of monostable and bistable states, wherein, the monostable photoswitch is that the state of photoswitch is switched to default channel all the time after the power supply of photoswitch cuts off, and the bistable state photoswitch is after cutting off the electricity supply, and the state of photoswitch rests on the passage before the outage; Comparatively speaking, the monostable photoswitch is more complicated than bistable state photoswitch principle, and power consumption is large.
For realizing the bistable state of photoswitch, adopt a kind of elastic construction, elastic deformation occurs under external force, and external force is cancelled Shi Buhui and is returned back to original state, but is stabilized in the another one state, claims that this structure is bistable structure or bistable mechanism.This structure only need to be inputted the energy of finishing switching state, does not need to continue to input energy and just can maintain any one state in two states, thereby reach energy-conservation purpose.
The existing disclosed arc MEMS compliant bistable mechanism of patent documentation CN 101654216A, comprise Curved beam, flexure spring, lumped mass piece and pedestal, wherein, the lumped mass piece is fixedly installed on the center of Curved beam, the two ends of Curved beam link to each other with an end of the flexure spring of two same structures respectively, and the other end of two flexure springs links to each other with the pedestal of two same structures respectively.In this invention, it utilizes initial arc MEMS structure to realize original state in the bistable state, switches to another state position by external force.Although said structure also can be realized bi-stable effect, in handoff procedure, still need the booster action of external force just can completion status to switch, the operation relative complex, reliability is lower, also can affect the response speed of device.Simultaneously, the making of this bistable mechanism needs two mask plates, only is a bistable mechanism after the making, can not produce simultaneously the required minute surface of light path switch and pedestal, so that in use also need reprocessing or refill the operation such as to join, make troubles to use.
Summary of the invention
It is simple in structure that one of purpose of the present invention is to propose a kind of making, fast response time, the method for the MEMS micro mirror bistable structure that reliability is high, power consumption is low, this manufacture craft is simple, and micromirror and straight beam actuating arm, pedestal are one-body molded, and it is higher to make precision.
Two of purpose of the present invention is to propose a kind of photoswitch, and the bistable structure of this photoswitch is made by said method and obtained, and the photoswitch of this MEMS micro mirror bistable structure is easy to operate, need not the switching that External Force Acting can be realized two states, and energy consumption is low.
For reaching this purpose, the present invention by the following technical solutions:
A kind of method for making of MEMS micro mirror bistable structure may further comprise the steps:
Steps A: at the front of cleaned high-impedance state silicon chip deposition ground floor thin dielectric membrane material, and etching forms the first material structure layer in the actuating arm;
Step B: at the first material structure layer evaporation first layer metal membraneous material, and etching formation metal level, this metal level is the layer of material structure in pad and the actuating arm, the ground floor material structure layer that forms in this metal level and the steps A forms actuating arm;
Step C: sputter second layer metal film on the metal level that in step B, forms, and adopt etching or stripping technology to form micromirror;
Step D: as mask, carry out dark silicon etching at the back side of high-impedance state silicon chip with micromirror, and form a cavity, this cavity is positioned at the below of micromirror and actuating arm;
Step e: dark silicon etching is carried out in the front at the high-impedance state silicon chip, and need not its mask, to form the straight beam bistable structure;
Step F: after etching is finished, be cooled to room temperature, form the original state of bistable structure.
Further, the mode of the deposition in the described steps A is PECVD, and the method for etching is dry method or wet etching.
Further, the material of the ground floor thin dielectric film in the described steps A is SiO
2
Further, the metal level among the described step B is the conductor layer in pad and the actuating arm structure, and the material of this metal level is Al.
Further, the method for the etching among the described step B is dry etching.
Further, the material of the second layer metal film among the described step C is Au.
Further, the original state of the bistable structure that forms in the described step F is the first steady state (SS) of bistable structure, the elemental height of described bistable structure and the length ratio of bistable structure, and namely h/L is greater than 3.
Further, the elemental height of described bistable structure and the length ratio of bistable structure, namely h/L is greater than 6.
A kind of photoswitch with the MEMS micro mirror bistable structure that is obtained by the said method making comprises bistable structure and drives structure, and described bistable structure is arranged at the top of drives structure.
Further, the type of drive field drives of described drives structure or coil drive mode.
Beneficial effect of the present invention is: the method for making of a kind of MEMS micro mirror bistable structure that the present invention proposes, may further comprise the steps, steps A: at the front of cleaned high-impedance state silicon chip deposition ground floor thin dielectric membrane material, and etching forms the first material structure layer in the actuating arm; Step B: at the first material structure layer evaporation first layer metal membraneous material, and etching formation metal level, this metal level is the layer of material structure in pad and the actuating arm, the ground floor material structure layer that forms in this metal level and the steps A forms actuating arm; Step C: sputter second layer metal film on the metal level that in step B, forms, and adopt etching or stripping technology to form micromirror; Step D: as mask, carry out dark silicon etching at the back side of high-impedance state silicon chip with micromirror, and form a cavity, this cavity is positioned at the below of micromirror and actuating arm; Step e: dark silicon etching is carried out in the front at the high-impedance state silicon chip, and need not its mask, to form the straight beam bistable structure; Step F: after etching is finished, be cooled to room temperature, form the original state of bistable structure.The method is by one-body molded mode moulding bistable structure, micromirror and pedestal, and is easy and simple to handle, and working (machining) efficiency is high; The present invention also proposes a kind of photoswitch of being made the MEMS micro mirror bistable structure that obtains by said method that has, and comprises bistable structure and drives structure, and described bistable structure is arranged at the top of drives structure.Further, the type of drive field drives of described drives structure or coil drive mode.Wherein, adopt the different bi-material of expansivity on the Two-layer Beam structure, make the structure of its self-assembling formation the first steady state (SS) behind heating and cooling, keep its state without energy requirement, reduced power consumption; By adopting the mode of Electromagnetic Drive, realize the switching of photoswitch between the first steady state (SS) and the second steady state (SS), and based on electromagnetic drive mode, so that bistable structure component responds speed is fast, this is simple in structure, reliability is high, energy consumption is low; Utilize semiconductor batch production, the individual devices cost is low.
Description of drawings
Fig. 1 is the making process flow diagram of a kind of MEMS micro mirror of the present invention bistable structure;
Fig. 2 makes the MEMS micro mirror bistable structure that obtains by the method for Fig. 1;
Fig. 3 is the A-A sectional view of MEMS micro mirror bistable structure among Fig. 2;
Fig. 4 is optical switch construction synoptic diagram of the present invention.
Among the figure:
1, bistable structure; 2, substrate; 3, cavity; 4, the first steady state (SS); 5, the second steady state (SS); 6, making state; 7, drives structure; 11, actuating arm; 12, micromirror; The elemental height of h, bistable structure; The length of L, bistable structure.
Embodiment
Further specify technical scheme of the present invention below in conjunction with accompanying drawing and by embodiment.
Shown in Fig. 1～3, a kind of method for making of MEMS micro mirror bistable structure may further comprise the steps:
Steps A: at the front of cleaned high-impedance state silicon chip deposition ground floor thin dielectric membrane material, and etching forms the first material structure layer in the actuating arm 11;
Step B: at the first material structure layer evaporation first layer metal membraneous material, and etching formation metal level, this metal level is the layer of material structure in pad and the actuating arm 11, the ground floor material structure layer that forms in this metal level and the steps A forms actuating arm 11;
Step C: sputter second layer metal film on the metal level that in step B, forms, and adopt etching or stripping technology to form micromirror 12;
Step D: as mask, carry out dark silicon etching at the back side of high-impedance state silicon chip with micromirror 12, and form a cavity, this cavity is positioned at the below of micromirror 12 and actuating arm 11;
Step e: dark silicon etching is carried out in the front at the high-impedance state silicon chip, and need not its mask, to form the straight beam bistable structure;
Step F: after etching is finished, be cooled to room temperature, form the original state of bistable structure.
Wherein, the mode of the deposition in the described steps A is PECVD, and the method for etching is dry method or wet etching.
Wherein, the material of the ground floor thin dielectric film in the described steps A is SiO
2
Wherein, the metal level among the described step B is the conductor layer in pad and the actuating arm, and the material of this metal level is Al.
Wherein, the method for the etching among the described step B is dry etching.
Wherein, the material of the second layer metal film among the described step C is Au.
Wherein, the original state of the bistable structure 1 that forms in the described step F is the first steady state (SS) 4 of bistable structure 1, the length ratio of the elemental height of described bistable structure 1 and bistable structure 1, and namely h/L is greater than 3.
Preferably, the length ratio of the elemental height of described bistable structure 1 and bistable structure 1, namely h/L is greater than 6.
Further, the operating process of described steps A and step B can be changed, and namely makes first metal level, deposits ground floor thin dielectric membrane material again, and etching is to form actuating arm 11, so that operating process is easier.
Concrete, the actuating arm 11 of bistable structure 1 is that ground floor thin dielectric membrane material and the first layer metal membraneous material among the step B in the steps A forms, and this first layer metal film is Al, and ground floor thin dielectric membrane material is SiO
2, the thermal expansivity of above-mentioned bi-material is different, and when the actuating arm 11 of the bistable structure that heating is double-deck cooled off again, double-decker will shrink towards the high side of thermal expansivity, shrank just to form stress.And bistable structure 1 is higher than room temperature owing to make temperature in the process of making, and in the manufacturing process, the making state 6 of bistable structure is straight beam structure, can accurately control the thickness of evaporation and sputtered film, and also so that easy to operate, cost of manufacture is low; When being cooled to room temperature when completing, the actuating arm 11 of bistable structure will shrink towards the high side of thermal expansivity and form stress, this stress so that a state among bistable structure self-assembling formation the first steady state (SS) 4 and the second steady state (SS) 5 need not to apply external force and finish; And the length ratio of elemental height and bistable structure by the control bistable structure is greater than 6, so that the switching of bistable structure between the first steady state (SS) 4 and the second steady state (SS) 5 is easy, and the assurance response speed.
Above-mentioned manufacturing process is passed through the processing steps such as deposition, evaporation, sputter, dark silicon etching, the actuating arm 11 of one-body molded bistable structure, micromirror 12 and substrate 2, so that easy and simple to handle, working (machining) efficiency is high, and further improves machining precision.
As shown in Figure 4, a kind of photoswitch with the MEMS micro mirror bistable structure that is obtained by the said method making comprises bistable structure 1 and drives structure 7, and described bistable structure 1 is arranged at the top of drives structure 7.Because the actuating arm 11 of bistable structure is connected with its integrated substrate, and below actuating arm 11 and micromirror 12, be made into a cavity structure, drives structure 7 is arranged on this cavity and substrate below, actuating arm 11 can be out of shape by the space contraction above drives structure 7, realizes the switching between two stable states.
Wherein, the type of drive field drives of described drives structure 7 or coil drive mode.
As a kind of optimal way of the present invention, the type of drive of drives structure 7 is the field drives mode, and is preferred, this drives structure 7 is permanent magnet, and permanent magnet is arranged at the below of bistable structure 1, when switching on to bistable structure, because the magnetic action of permanent magnet produces magnetic field force F, under the effect of magnetic field force F, generation is perpendicular to the power downward or upward of bistable structure, structure is deformed, switch to the second steady state (SS) 5, after stopping to switch on, structure remains on this state, finishes switching.When switching to the first steady state (SS) 4 such as need, only need to change sense of current, and then change the direction of magnetic field force, so that structure stress switches to the first steady state (SS) 4.No matter be that this structure all need not the support of external force can keep its state, greatly reduces power consumption in the first steady state (SS) 4 or the second steady state (SS) 5.
As another kind of optimal way of the present invention, the type of drive of drives structure 7 is the coil drive mode, with coil be arranged at bistable structure 1 around, the back side at this bistable structure arranges magnetic material, preferably, this magnetic material can be combined with bistable structure by assembling mode assembling or electroplating technology, and magnetic material is magnetized; Can realize two switchings between the stable state by changing by the direction of current of coil.
In the present invention, the first steady state (SS) 4 is different from the position of the second steady state (SS) 5 corresponding micromirror 12, will form different light paths, and then realizes the different-effect of Push And Release.
This bistable state photoswitch adopts magnetic field or coil drive, so that photoswitch response speed piece is simple in structure, reliability is high; Utilize the semiconductor batch production technology, the individual devices cost is low.
Know-why of the present invention has below been described in conjunction with specific embodiments.These are described just in order to explain principle of the present invention, and can not be interpreted as by any way limiting the scope of the invention.Based on explanation herein, those skilled in the art does not need to pay performing creative labour can associate other embodiment of the present invention, and these modes all will fall within protection scope of the present invention.
Claims (10)
1. the method for making of a MEMS micro mirror bistable structure is characterized in that, may further comprise the steps:
Steps A: at the front of cleaned high-impedance state silicon chip deposition ground floor thin dielectric membrane material, and etching forms the first material structure layer in the actuating arm;
Step B: at the first material structure layer evaporation first layer metal membraneous material, and etching formation metal level, this metal level is the layer of material structure in pad and the actuating arm, the ground floor material structure layer that forms in this metal level and the steps A forms actuating arm;
Step C: sputter second layer metal film on the metal level that in step B, forms, and adopt etching or stripping technology to form micromirror;
Step D: as mask, carry out dark silicon etching at the back side of high-impedance state silicon chip with micromirror, and form a cavity, this cavity is positioned at the below of micromirror and actuating arm;
Step e: dark silicon etching is carried out in the front at the high-impedance state silicon chip, and need not its mask, to form the straight beam bistable structure;
Step F: after etching is finished, be cooled to room temperature, form the original state of bistable structure.
2. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1 is characterized in that, the mode of the deposition in the described steps A is PECVD, and the method for etching is dry method or wet etching.
3. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1 is characterized in that, the material of the ground floor thin dielectric film in the described steps A is SiO
2
4. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1 is characterized in that, the metal level among the described step B is the conductor layer in pad and the actuating arm, and the material of this metal level is Al.
5. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1 is characterized in that, the method for the etching among the described step B is dry etching.
6. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1 is characterized in that, the material of the second layer metal film among the described step C is Au.
7. the method for making of a kind of MEMS micro mirror bistable structure according to claim 1, it is characterized in that, the original state of the bistable structure that forms in the described step F is the first steady state (SS) of bistable structure, the elemental height of described bistable structure and the length ratio of bistable structure, namely h/L is greater than 3.
8. the method for making of a kind of MEMS micro mirror bistable structure according to claim 7 is characterized in that, the elemental height of described bistable structure and the length ratio of bistable structure, and namely h/L is greater than 6.
9. one kind has the photoswitch of being made the MEMS micro mirror bistable structure that obtains by claim 1 to 8 either method, it is characterized in that comprise bistable structure and drives structure, described bistable structure is arranged at the top of drives structure.
10. photoswitch according to claim 9 is characterized in that, the type of drive field drives of described drives structure or coil drive mode.
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| CN103133580A (en) * | 2013-02-27 | 2013-06-05 | 大连理工大学 | Variable-thickness plate based multi-stable variant structure |
| CN104007549A (en) * | 2014-05-05 | 2014-08-27 | 深圳市盛喜路科技有限公司 | Large-displacement MEMS optical switch with self-locked state |
| CN106481964A (en) * | 2015-08-27 | 2017-03-08 | 香港城市大学 | Multistable configuration and preparation method thereof |
| CN109799606A (en) * | 2017-11-16 | 2019-05-24 | 罗伯特·博世有限公司 | Micro-mechanical component and manufacturing method for micro-mechanical component |
| CN113292038A (en) * | 2021-07-05 | 2021-08-24 | 美满芯盛(杭州)微电子有限公司 | MEMS (micro-electromechanical system) enhanced mass block inertial device and preparation method thereof |
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