CN101196595A - Production method for electric-controlled adjustable optical attenuator chip - Google Patents
Production method for electric-controlled adjustable optical attenuator chip Download PDFInfo
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- CN101196595A CN101196595A CNA2007100433991A CN200710043399A CN101196595A CN 101196595 A CN101196595 A CN 101196595A CN A2007100433991 A CNA2007100433991 A CN A2007100433991A CN 200710043399 A CN200710043399 A CN 200710043399A CN 101196595 A CN101196595 A CN 101196595A
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Abstract
A preparation method for tunable optical attenuator clip controlled by electricity is provided, which comprises the steps of oxidation, photolithography, cauterization and electrode making. The method is to form a cantilever section on upper electrode and form a cavum section of lower electrode. The electric controlled tunable optical attenuator clip made by the method in the invention adopts SOI (Silicon on Insulator) technique to make a cantilever electric controlled reflector, which can be a moving component instead of silicon nitride membrane cavum. Compared with silicon nitride material, SOI material has higher fatigue resistivity, which can enforce the reliability of the apparatus. The invention adopts reflector movement to attenuate the deflection of light out of light path and replaces the former Fabry-Perot interferometer structure, which has easier structure and more controllable technics. The method in the invention is characterized by simple approach and easy control.
Description
Technical field
The present invention relates to a kind of preparation method's of optical attenuator, particularly a kind of electric adjustable optical attenuator chip preparation method, belong to microelectron-mechanical and optical communication device technical field.
Background technology
Adjustable optical attenuator (Variable Optical Attenuator is called for short VOA) is a kind of core devices in the modern broadband light net. in wavelength-division multiplex optical networking network (WDM Fiber Optical Networks), be used for adjusting the power of each channel signal. can also be used for simultaneously the dynamic range of long Distance Transmission of analog optical fiber or detected transmission system. traditional opto-mechanical VOA attenuation range wide (＞50db), but volume is big, response time long (1 second), power are big, so limited its application prospect.In recent years, the report of relevant micromechanics adjustable optical attenuator is extremely many, wherein mainly utilize the deflection of catoptron and make in the majority that the luminous power that reflexes to output optical fibre changes, this VOA has realized that volume is little, but the response time (Millisecond) awaits to improve.As according to IEEE, in September, 1998, people such as B.Barber developed a kind of micromechanics optical attenuator with static driven, and its principle is to rely on the displacement of catoptron to realize optical attenuation, and disadvantage has been this structural limitations its response time.Chinese patent 00127939.4 report one Electromagnetic Drive microcomputer variable light attenuator, this attenuator adopts light barrier and Electromagnetic Drive loop construction, and its shortcoming is that the response time is long, reaches Millisecond.Chinese patent 02288433.5 disclosed electric adjustable optical attenuator, it comprises the two optical fiber of input and output single mode, collimation lens, the titanium platinum electrode, silicon nitride film, the silicon dioxide support arm, the heavily doped silicon substrate, the cavitation attack pit, cavity, the optical window transmitting film, bonding agent, quartzy pedestal, extraction electrode, fixed cover, shell, quartzy pipe box 17, deposit the silicon dioxide support arm on the heavily doped silicon substrate, the central authorities of silicon dioxide support arm are cavitys, the silicon nitride film of cavity top constitutes the optical window reflectance coating, the optical window reflectance coating is with the titanium platinum electrode outward, optical window reflectance coating and titanium platinum electrode constitute the movable film that is suspended in the cavity top, equally distributed cavitation attack pit on titanium platinum electrode and the silicon nitride film, titanium platinum electrode and heavily doped silicon substrate are electrically connected, the heavily doped silicon substrate, the silicon dioxide support arm, silicon nitride film, the titanium platinum electrode, cavity and cavitation attack pit constitute electric adjustable optical attenuator chip, the electricity adjustable optical attenuator chip is bonded on the quartzy pedestal, two extraction electrodes become to be electrically connected with the titanium platinum electrode respectively, the two optical fiber of input and output single mode by bonding agent with after collimation lens links to each other, be encapsulated in the quartzy pipe box quartzy pipe box and interior collimation lens thereof, two optical fiber of input and output single mode and quartzy pedestal and on electric adjustable optical attenuator chip, extraction electrode by the integrated encapsulation of fixed cover in the enclosure.The power supply feedback is added between two extraction electrodes, and movable film makes the thickness of cavity change under the electrostatic attraction effect.Monochromatic light converges to the optical window reflectance coating from the two optical fiber inputs of input and output single mode through collimation lens, and reflected light enters the two optical fiber of input and output single mode, and from the two optical fiber outputs of input and output single mode.When supply voltage when 0 volt increases continuously 24V, the thickness of cavity reduces to 1/2 λ (λ is a lambda1-wavelength) gradually from 3/4 λ, and the reflectivity of optical window reflectance coating is changed, and has realized the continuous decay of reflected light from 3db to 30db.Because it adopts the silicon nitride film cavity as movable element, fatigue resistence is poor, therefore causes the reliability of device relatively poor.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of preparation method of electric adjustable optical attenuator chip, electric adjustable optical attenuator chip by this method preparation adopts the SOI technology, make the automatically controlled catoptron of cantilevered, replace the silicon nitride film cavity as movable element.Adopt mirror motion to make light deflect away from light path and reach decay, replace former Fabry-Perot interferometer structure, structure is simpler, the easier control of technology.
Technical matters to be solved by this invention can be achieved through the following technical solutions:
The preparation method of electricity adjustable optical attenuator chip comprises the steps:
1, oxidation: select a SOI (silicon on the insulation course) sheet,, each oxidation of lower surface goes out the layer of silicon dioxide layer thereon; Middle layer of silicon dioxide layer is divided into upper and lower two parts with the SOI sheet, so that the upper and lower electrode of moulding, the process conditions of oxidation are 1180 ℃ of temperature, dried oxygen 10min, wet oxygen 80min, dried oxygen 15min;
2, photoetching:
A, be coated with positive glue, on the silicon dioxide layer of upper surface, erode away corrosion hole and bracketed part by photoetching in the silicon dioxide layer front of upper surface; The photoetching process parameter is reticle 1N, post bake 20min, and exposure 40s, 7 ‰ NaOH that develop, water cleans then; Remove photoresist with 6%NaOH at last, water cleans again;
B, be coated with positive glue, on the silicon dioxide layer of upper surface, erode away the cavity part by photoetching in the silicon dioxide layer front of lower surface; The photoetching process parameter is reticle 1N, post bake 20min, and exposure 40s, 7 ‰ NaOH that develop, water cleans then; Remove photoresist with 6%NaOH at last, water cleans again;
3, corrosion
The silicon layer of a, corrosion top electrode part: the back-protective of SOI sheet is got up, put into 25% Tetramethylammonium hydroxide, be heated to 85 ℃, corrosion 16min is to erode away corrosion hole and bracketed part on the silicon layer of top electrode part;
The silicon layer of b, corrosion bottom electrode part: the front protecting of SOI sheet is got up, put into 25% Tetramethylammonium hydroxide, be heated to 85 ℃, corrosion 16min is to erode away cavity on the silicon layer of bottom electrode part.
Silicon dioxide layer in the middle of c, the corrosion: chip is put into hydrofluoric acid aqueous solution, and the silicon dioxide layer of one deck in the middle of the corrosion corrodes the back that finishes and cleans, oven dry, and the ratio of hydrofluoric acid aqueous solution is: hydrofluorite: water=1: 1;
4, do electrode: the tow sides at the chip of finishing steam gold, form upper and lower electrode.
The electric adjustable optical attenuator chip that adopts the inventive method to make, it adopts SOI (silicon on the insulation course) technology, makes the automatically controlled catoptron of cantilevered, replaces the silicon nitride film cavity as movable element.SOI material and silicon nitride material relatively have higher fatigue resistence, have increased the reliability of device.Adopt mirror motion to make light deflect away from light path and reach decay, replace former Fabry-Perot interferometer structure, structure is simpler, the easier control of technology.It is simple that method of the present invention has step, manageable characteristics.
Description of drawings
Fig. 1 is the chip structure synoptic diagram of preparation method's oxidation step formation of the present invention's electricity adjustable optical attenuator chip.
Fig. 2 is the chip synoptic diagram of a step gluing in preparation method's lithography step of the present invention's electricity adjustable optical attenuator chip.
The chip synoptic diagram of Fig. 3 after for a step photoetching in preparation method's lithography step of the present invention electricity adjustable optical attenuator chip.
Fig. 4 is the chip synoptic diagram after a step is removed photoresist in preparation method's lithography step of the present invention's electricity adjustable optical attenuator chip.
Fig. 5 is the chip synoptic diagram of b step gluing in preparation method's lithography step of the present invention's electricity adjustable optical attenuator chip.
The chip synoptic diagram of Fig. 6 after for b step photoetching in preparation method's lithography step of the present invention electricity adjustable optical attenuator chip.
Fig. 7 is the chip synoptic diagram after a step is corroded in preparation method's corrosion step of the present invention's electricity adjustable optical attenuator chip.
Fig. 8 is the chip synoptic diagram after a step is removed photoresist in preparation method's corrosion step of the present invention's electricity adjustable optical attenuator chip.
Fig. 9 is the chip synoptic diagram after the b step is corroded in preparation method's corrosion step of the present invention's electricity adjustable optical attenuator chip.
Figure 10 is the chip synoptic diagram after the c step is corroded in preparation method's corrosion step of the present invention's electricity adjustable optical attenuator chip.
Figure 11 is the chip synoptic diagram after the preparation method of the present invention's electricity adjustable optical attenuator chip does the electrode step.
Embodiment
For technological means, creation characteristic that the present invention is realized, reach purpose and effect is easy to understand, below in conjunction with embodiment, further set forth the present invention.
The preparation method of electricity adjustable optical attenuator chip comprises the steps:
1, oxidation: referring to Fig. 1, select a SOI sheet,, lower surface and middle each oxidation go out layer of silicon dioxide layer 1,2,3 thereon; Middle layer of silicon dioxide layer 3 is divided into upper and lower two parts 4,5 with the SOI sheet, so that the upper and lower electrode of moulding, the process conditions of oxidation are 1180 ℃ of temperature, dried oxygen 10min, wet oxygen 80min, dried oxygen 15min;
2, photoetching:
A, referring to Fig. 2, Fig. 3 and Fig. 4, be coated with positive glue 6 in silicon dioxide layer 1 front of upper surface, on this silicon dioxide layer 1, erode away corrosion hole 7 and bracketed part 8 by photoetching; The photoetching process parameter is reticle 1N, post bake 20min, and exposure 40s, 7 ‰ NaOH that develop, water cleans then; Remove photoresist with 6%NaOH at last, water cleans again;
B, referring to Fig. 5, Fig. 6 and Fig. 7, be coated with positive glue 9 in silicon dioxide layer 2 fronts of lower surface, on this silicon dioxide layer 2, erode away cavity part 10 by photoetching; The photoetching process parameter is reticle 1N, post bake 20min, and exposure 40s, 7 ‰ NaOH that develop, water cleans then; Remove photoresist with 6%NaOH at last, water cleans again;
3, corrosion
A, referring to Fig. 8, the silicon layer 4 of corrosion top electrode part: the back-protective of SOI sheet is got up, put into 25% Tetramethylammonium hydroxide, be heated to 85 ℃, corrosion 16min is to erode away corrosion hole 11 and bracketed part 12 on the silicon layer 4 of top electrode part;
B, referring to Fig. 9, the silicon layer 5 of corrosion bottom electrode part: the front protecting of SOI sheet is got up, put into 25% Tetramethylammonium hydroxide, be heated to 85 ℃, corrosion 16min is to erode away cavity 13 on the silicon layer 5 of bottom electrode part.
C, referring to the silicon dioxide layer 3 of Figure 10 in the middle of corroding: chip is put into hydrofluoric acid aqueous solution, the silicon dioxide layer 3 of one deck in the middle of the corrosion, the corrosion back that finishes is cleaned, oven dry, the ratio of hydrofluoric acid aqueous solution is: hydrofluorite: water=1: 1;
4, do electrode: steam gold referring to Figure 11 at the tow sides of the chip of finishing, form upper and lower electrode 14,15.
More than show and described ultimate principle of the present invention, principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; that describes in the foregoing description and the instructions just illustrates principle of the present invention; the present invention also has various changes and modifications without departing from the spirit and scope of the present invention, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (1)
1. the preparation method of electric adjustable optical attenuator chip is characterized in that, comprises the steps:
1), oxidation: select a SOI sheet,, lower surface and middle each oxidation go out the layer of silicon dioxide layer thereon; Middle layer of silicon dioxide layer is divided into upper and lower two parts with the SOI sheet, so that the upper and lower electrode of moulding, the process conditions of oxidation are 1180 ℃ of temperature, dried oxygen 10min, wet oxygen 80min, dried oxygen 15min;
2), photoetching:
A, be coated with positive glue, on the silicon dioxide layer of upper surface, erode away corrosion hole and bracketed part by photoetching in the silicon dioxide layer front of upper surface; The photoetching process parameter is reticle 1N, post bake 20min, and exposure 40s, 7 ‰ NaOH that develop, water cleans then; Remove photoresist with 6%NaOH at last, water cleans again;
B, be coated with positive glue, on the silicon dioxide layer of upper surface, erode away the cavity part by photoetching in the silicon dioxide layer front of lower surface; The photoetching process parameter is reticle 1N, post bake 20min, and exposure 40s, 7 ‰ NaOH that develop, water cleans then; Remove photoresist with 6%NaOH at last, water cleans again;
3), corrosion
The silicon layer of a, corrosion top electrode part: the back-protective of SOI sheet is got up, put into 25% Tetramethylammonium hydroxide, be heated to 85 ℃, corrosion 16min is to erode away corrosion hole and bracketed part on the silicon layer of top electrode part;
The silicon layer of b, corrosion bottom electrode part: the front protecting of SOI sheet is got up, put into 25% Tetramethylammonium hydroxide, be heated to 85 ℃, corrosion 16min is to erode away cavity on the silicon layer of bottom electrode part.
Silicon dioxide layer in the middle of c, the corrosion: chip is put into hydrofluoric acid aqueous solution, and the silicon dioxide layer of one deck in the middle of the corrosion corrodes the back that finishes and cleans, oven dry, and the ratio of hydrofluoric acid aqueous solution is: hydrofluorite: water=1: 1;
4), do electrode: the tow sides at the chip of finishing steam gold, form upper and lower electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100433991A CN101196595A (en) | 2007-07-03 | 2007-07-03 | Production method for electric-controlled adjustable optical attenuator chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100433991A CN101196595A (en) | 2007-07-03 | 2007-07-03 | Production method for electric-controlled adjustable optical attenuator chip |
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| CN101196595A true CN101196595A (en) | 2008-06-11 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103412416A (en) * | 2013-08-09 | 2013-11-27 | 深圳供电局有限公司 | Temperature regulation type high-precision optical attenuation device |
| CN103576242A (en) * | 2013-10-25 | 2014-02-12 | 中国科学院半导体研究所 | Manufacturing method for light-blocking type micro-electro-mechanical variable light attenuator |
-
2007
- 2007-07-03 CN CNA2007100433991A patent/CN101196595A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103412416A (en) * | 2013-08-09 | 2013-11-27 | 深圳供电局有限公司 | Temperature regulation type high-precision optical attenuation device |
| CN103576242A (en) * | 2013-10-25 | 2014-02-12 | 中国科学院半导体研究所 | Manufacturing method for light-blocking type micro-electro-mechanical variable light attenuator |
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