CN107285269A - Mems device and preparation method thereof - Google Patents
Mems device and preparation method thereof Download PDFInfo
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- CN107285269A CN107285269A CN201710488194.8A CN201710488194A CN107285269A CN 107285269 A CN107285269 A CN 107285269A CN 201710488194 A CN201710488194 A CN 201710488194A CN 107285269 A CN107285269 A CN 107285269A
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- hole
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- mems device
- function film
- anchor point
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
- B81B1/002—Holes characterised by their shape, in either longitudinal or sectional plane
- B81B1/004—Through-holes, i.e. extending from one face to the other face of the wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of mems device, including substrate and function film layer, the substrate includes first surface, second surface and back of the body through hole, the first surface and the second surface are relative, the function film layer is set on the first surface, the back of the body through hole runs through the first surface and the second surface, and the function film layer has multiple first through hole, and the first through hole is connected with the back of the body through hole.The invention also discloses a kind of preparation method of mems device.Mems device cost in the present invention is low, and available for the device such as fluid sensor and biological molecular sieve is made, its substrate uses common silicon chip, step of preparation process is few, is easy to optimized device performance, reaches higher yield, performed etching using dry process, with preferable compatibility.
Description
Technical field
The present invention relates to MEMS (MEMS) devices field, more particularly to a kind of mems device and its preparation
Method.
Background technology
Micro electronmechanical (MEMS) includes multiple functional units, is related to subject and application field is quite varied, one is done to it is
The classification of system is relatively difficult.Different according to the function of component units, MEMS can substantially be divided into microsensor, micro- execution
Device, micro-structural and include the integrated system of multiple units.According to the materials classification of processing, MEMS process technologies mainly include silicon
Two kinds of process technologies of base and non-silicon-based.Present MEMS has much surmounted the concept of " machine " and " electricity ", will handle it is hot,
The structures such as light, magnetic, chemistry, biology and device are manufactured on chip by micro-nano technology technique, and by with circuit it is integrated very
To it is mutual it is integrated construct complicated miniature system, it is different according to application field, MEMS is applied to communication, optics, biology
The fields such as medical science, the energy, just generate RF MEMS, Optical MEMS, BIOMEMS and Power MEMS etc. respectively.Wherein flow
Body is the important basic science and application direction in MEMS fields, including gas sensor, biochip, fluid sensor etc..
Silicon substrate MEMS process technologies mainly include bulk silicon MEMS process technology and surface MEMS process technologies.Bulk silicon MEMS adds
The deep etching being mainly characterized by silicon substrate material of work technology, can obtain larger longitudinal size movable microstructure.Surface MEMS
Process technology is mainly by completing the system of MEMS in plural layers such as grown above silicon silica, silicon nitride, polysilicons
Make.The longitudinal size of the movable microstructure obtained using surface treatment is smaller, but with the compatibility of IC techniques more preferably, easily and circuit
Realize single-chip integration.Bulk silicon technological main at present includes wet method SOG (silicon-on-glass) technique, dry method SOG techniques, front body silicon
Technique, SOI (silicon-on-insulator) technique.Compared with other techniques, SOI technology uses complete silicon structure, passes through silicon-silicon bonding skill
Art bonds together silicon with silicon chip, due to being complete silicon structure, therefore is not present due to the stress influence that thermal coefficient of expansion is brought,
Laminate construction thickness has higher machining accuracy up to 80 μm, it is easy to circuit single-chip integration.SOI technology has and IC techniques
More preferably compatibility the characteristics of, it is adaptable to the manufacture of more MEMSs, available for make MEMS inertia devices (including gyro,
Accelerometer, vibrating sensor etc.), MEMS optics (including photoswitch, attenuator etc.), Bio-MEMS, fluid MEMS etc.
A variety of MEMSs, with wider array of applicability, can be achieved batch machining demand, are a current mainstream machining processes and hair
Exhibition trend.
But SOI technology has following several shortcomings：1st, cost is high, and the cost of soi wafer is higher than common silicon chip；2nd, technique control
System is difficult, and with the increase of processing step, technology difficulty can increase therewith, and yield rate, performance for device etc. can all cause shadow
Ring；3rd, compatibility is poor, and for integrated multiple devices or the device of formation array, its processing compatibility is poor；With limitation,
It can only be processed for total silicon material.
The content of the invention
In view of prior art exist deficiency, the invention provides a kind of MEMS applied to fluid and one kind it is low into
Originally, the method that technique simply prepares MEMS.
In order to realize above-mentioned purpose, present invention employs following technical scheme：
A kind of mems device, including substrate and function film layer, the substrate include first surface, second surface
With back of the body through hole, the first surface and the second surface are relative, and the function film layer is set on the first surface, institute
State back of the body through hole and run through the first surface and the second surface, function film layer has multiple first through hole, described the
One through hole is connected with the back of the body through hole.
Preferably, the mems device also includes electrode layer, and the electrode layer is arranged on the function film layer
On, the electrode layer has multiple second through holes, and it is just right that second through hole is corresponded with the first through hole.
Preferably, the mems device also includes anchor point material layer, and the anchor point material layer is arranged on the electricity
On the layer of pole, the anchor point material layer has multiple third through-holes, and it is just right that the third through-hole is corresponded with second through hole.
Preferably, the anchor point material layer through the electrode layer and the function film layer, with the substrate contact.
Present invention also offers a kind of preparation method of mems device, including：
A substrate is provided, the substrate includes relative first surface and second surface；
Make over the substrate and form function film layer；
Patterned process is carried out to function film layer, to form multiple first through hole in function film layer；
The substrate is performed etching along from the first surface to the direction of the second surface, with formed with it is described
The back of the body through hole of multiple first through hole connections.
Preferably, before patterned process is carried out to function film layer, the making of the mems device
Method also includes：
Made on function film layer and form electrode layer；
Patterned process is carried out to the electrode layer, to form multiple second through holes, described second in the electrode layer
It is just right that through hole is corresponded with the first through hole.
Preferably, make over the substrate before forming function film layer, the making side of the mems device
Method also includes：Make over the substrate and form buffer medium layer.
Preferably, after patterned process is carried out to the electrode layer, the preparation method of the mems device
Also include：Made on the electrode layer and form anchor point material layer, the anchor point material layer extends to second through hole and institute
State in first through hole, to be contacted with buffer medium layer；
It is described micro- along after being performed etching from the second surface to the direction of the first surface to the substrate
The preparation method of Mechatronic Systems device also includes：The anchor point material layer of the bottom of the first through hole and the buffering are situated between
Matter layer etching is removed.
Preferably, patterned process is being carried out to function film layer, to form multiple in function film layer
While first through hole, the preparation method of the mems device also includes：First is formed in function film layer
Anchor point through hole；
Patterned process, while to form multiple second through holes in the electrode layer, institute are carried out to the electrode layer
Stating the preparation method of mems device also includes：Formed in the electrode layer with the first anchor point through hole just to the
Two anchor point through holes；
While making forms anchor point material layer on the electrode layer, the preparation method of the mems device is also
Including：The anchor point material layer is extended in the first anchor point through hole and the second anchor point through hole, to be situated between with the buffering
Matter layer contact.
Mems device cost in the present invention is low, available for the making device such as fluid sensor and biological molecular sieve
Part, its substrate uses common silicon chip, and step of preparation process is few, is easy to optimized device performance, reaches higher yield, adopt
Performed etching with dry process, with preferable compatibility.
Brief description of the drawings
Fig. 1 to Fig. 6 is the mems device preparation method flow chart of the embodiment of the present invention one.
Fig. 7 to Figure 12 is the mems device preparation method flow chart of the embodiment of the present invention two.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further described.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and without
It is of the invention in limiting.
Embodiment one
As shown in fig. 6, the mems device that the embodiment of the present invention one is provided, it includes substrate 10, function film layer
20, substrate 10 includes first surface 10a, second surface 10b and back of the body through hole 11, and first surface 10a and second surface 10b are set relatively
Put, back of the body through hole 11 runs through first surface 10a and second surface 10b, function film layer 20 is covered in back of the body through hole 11 top and separately set
There is first through hole 21, first through hole 21 and fourth hole 61 are just right, form fluid path.
In order to prevent function film layer from 20 coming off, the part that function film layer 20 is located on first surface 10a offers the
Anchor point material layer 40 is provided with one anchor point through hole 22, the first anchor point through hole 22 and its in the partial function film layer 20 of surrounding,
Function film layer 20 is further secured on substrate 10 by anchor point material layer 40.The mems device of the present embodiment one can use
Make cellular elements sieve chip, at this moment the making material of function film layer 20 is preferably the thin-film material with biocompatibility.
Fig. 1 to Fig. 6 sequentially show the technological process of the preparation method of the mems device of the present embodiment 1, the system
Preparation Method specifically includes following steps：
Step S01, one substrate 10 of offer, make form function film layer 20 over the substrate 10
Specifically, substrate 10 uses the common naked silicon chip of semiconductor, with the first surface 10a and the second table being oppositely arranged
Face 10b.As described in Figure 1 in order to which defencive function film layer 20 is not destroyed in subsequent preparation process, function film layer is being formed
Before 20, the somatomedin material on first surface 10a forms buffer medium layer 50.As shown in Fig. 2 then in buffer medium layer
Made on 50 and form function film layer 20, thin-film material is the material with specific function, such as with the thin of biocompatibility
Membrane material, the thickness of function film layer 20 is 2 μm~50 μm.
Step S02,20 processing is patterned to function film layer, it is logical to form multiple first on function film layer 20
Hole 21.
Specifically, using dry etch process to function film 20 graphical treatment of layer, according to mems device
Different purposes, form the different graphical membrane structure of structure, are specifically to have special pattern in function film layer 20 plus one layer
Mask plate so that first through hole 21 in figure be distributed, to realize difference in functionality.
While forming multiple first through hole 21 on function film layer 20, the first anchor point is formed on function film layer 20
Through hole 22, the first anchor point through hole 22 and its around partial function film layer 20 on grow anchor point material, formed anchor point material
Layer 40, function film layer 20 is fixed on buffer medium layer 50.
Step S03, along from second surface 10b to the direction of the first surface 10a substrate 10 is performed etching, with shape
Into the back of the body through hole 11 connected with multiple first through hole 21.
Specifically, corresponding mask plate is added in the second face 10b of substrate 10, shape is performed etching using dry etch process
Into back of the body through hole 11, the depth of back of the body through hole 11 is the thickness of substrate 10.After back of the body through hole 11 is formed, buffer medium layer 50 is then removed
It is upper with first through hole 21 just to part so that the back of the body through hole 11 of multiple connections of first through hole 21, so just form fluid road
Footpath.
Mems device cost in the present embodiment one is low, is used as substrate, preparation technology using common silicon chip
Step is few, it is easier to optimized device performance, reaches higher yield, is performed etching using dry process, with preferably simultaneous
Capacitive.
Embodiment two
As shown in figure 12, electrode layer is also included from the mems device of the present embodiment two unlike embodiment one
30, electrode layer 30 covers the part of first through hole 21 between function film layer 20 and anchor point material layer 40 on electrode layer 30
The part for offering covering first through hole 21 in the second through hole 31, anchor point material layer 40 offers third through-hole 41, first through hole
21st, the second through hole 31, third through-hole 41 and back of the body through hole 11 constitute fluid path.The mems device master of the present embodiment two
It is used for fluid sensor, such as gas flow sensor, gas is contacted and vented liquid path with electrode layer 30, electrode layer 30
Electrically connected with external circuit, when gas flow changes, the generation electric signal of electrode layer 30, the electric signal is delivered in external circuit
Detected.
Fig. 7 to Figure 12 sequentially show the technological process of the preparation method of the mems device of the present embodiment 2, the system
Preparation Method specifically includes following steps：
Step S01, this step are identical with the step S01 in embodiment one, will not be repeated here.
Step S02, the formation electrode layer 30 on function film layer 20.
Specifically, as shown in Figure 9 and Figure 10, after forming electrode layer 30 on function film layer 20, the first mask plate is utilized
Processing is patterned to electrode layer 30 so that multiple second through holes 31 are formed on electrode layer 30.Form multiple on electrode layer 30
After second through hole 21, function film layer 20 is handled using the second mask plate so that function film layer 20 forms multiple the
One through hole 21, first through hole 21 is just right one by one with the second through hole 31.
Further, the second anchor point through hole 32 is formed while multiple second through hole 31 are formed on electrode layer 30, is made
Obtain while function film layer 20 forms multiple first through hole 21 and form the first anchor point through hole 22, the first anchor point through hole 22 and second
Anchor point through hole is just right.
Step S03, on electrode layer 30 make form anchor point material layer 40.
Specifically, as shown in figure 11, anchor point material formation anchor point material layer 40, anchor point material layer are grown on electrode layer 30
40 extend in the second through hole 31 and first through hole 21, to be contacted with buffer medium layer 50, electrode material is wrapped, guarantor is played
Shield is acted on.
Further, anchor point material layer 40 extends in the first anchor point through hole 22 and the second anchor point through hole 32, anchor point material layer
40 contact buffer medium layers 50 so that function film layer 20 and electrode layer 30 are fixed on buffer medium layer 50.
Step S04, along from second surface 10b to first surface 10a direction the substrate 10 is performed etching, with shape
Into the back of the body through hole 11 connected with the multiple first through hole 21.
Specifically, corresponding mask plate is added in the second face 10b of substrate 10 as shown in figure 12, utilizes dry etch process
Perform etching to form back of the body through hole 11, the depth of back of the body through hole 11 is the thickness of substrate 10.Further, after back of the body through hole 11 is formed,
Then remove buffer medium layer 50 and anchor point material layer 40 on first through hole 21 just to part so that multiple first through hole
21st, the second through hole 31 connection back of the body through hole 11, so just forms fluid path.
Described above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (9)
1. a kind of mems device, it is characterised in that including substrate (10) and function film layer (20), the substrate (10)
Including first surface (10a), second surface (10b) and back of the body through hole (11), the first surface (10a) and the second surface
(10b) relatively, the function film layer is arranged on the first surface (10a), and the back of the body through hole (11) runs through described first
Surface (10a) and the second surface (10b), the function film layer (20) have multiple first through hole (21), described first
Through hole (21) is connected with the back of the body through hole (11).
2. mems device according to claim 1, it is characterised in that the mems device also includes electricity
Pole layer (30), the electrode layer (30) is arranged on the function film layer (20), and the electrode layer (30) has multiple second
Through hole (31), it is just right that second through hole (31) corresponds with the first through hole (21).
3. mems device according to claim 2, it is characterised in that the mems device also includes anchor
Point material layer (40), the anchor point material layer (40) is arranged on the electrode layer (30), and the anchor point material layer (40) has
Multiple third through-holes (41), it is just right that the third through-hole (41) corresponds with second through hole (21).
4. mems device according to claim 3, it is characterised in that the anchor point material layer (40) is through described
Electrode layer (30) and the function film layer (20), with the substrate contact.
5. a kind of preparation method of mems device, it is characterised in that including：
A substrate (10) is provided, the substrate (10) includes relative first surface (10a) and second surface (10b)；
Make over the substrate and form function film layer (20)；
Patterned process is carried out to function film layer (20), led to forming multiple first in function film layer (20)
Hole (21)；
The substrate (10) is performed etching along from the second surface (10b) to the direction of the first surface (10a), with
Form the back of the body through hole (11) connected with the multiple first through hole (21).
6. the preparation method of mems device according to claim 5, it is characterised in that to the function film
Layer (20) is carried out before patterned process, and the preparation method of the mems device also includes：
Made on function film layer (20) and form electrode layer (30)；
Patterned process is carried out to the electrode layer (30), to form multiple second through holes (31) in the electrode layer (30),
It is just right that second through hole (31) corresponds with the first through hole (21).
7. the preparation method of mems device according to claim 6, it is characterised in that on the substrate (10)
Making is formed before the function film layer (20), and the preparation method of the mems device also includes：In the substrate
(10) made on and form buffer medium layer (50).
8. the preparation method of mems device according to claim 7, it is characterised in that to the electrode layer
(30) carry out after patterned process, the preparation method of the mems device also includes：On the electrode layer (30)
Making forms anchor point material layer (40), and the anchor point material layer (40) extends to second through hole (31) and the first through hole
(21) in, to be contacted with buffer medium layer (50)；
The substrate (10) is performed etching along from the second surface (10b) to the direction of the first surface (10a)
Afterwards, the preparation method of the mems device also includes：By the anchor point material of the bottom of the first through hole (21)
The bed of material (40) and buffer medium layer (50) etching are removed.
9. the preparation method of mems device according to claim 8, it is characterised in that to the function film
Layer (20) carries out patterned process, described while to form multiple first through hole (21) in function film layer (20)
The preparation method of mems device also includes：The first anchor point through hole (22) is formed in function film layer (20)；
Patterned process is carried out to the electrode layer (30), to form multiple second through holes (31) in the electrode layer (30)
Meanwhile, the preparation method of the mems device also includes：Formed and first anchor point in the electrode layer (30)
Through hole (22) just to the second anchor point through hole (32)；
While making forms anchor point material layer (40) on the electrode layer (30), the making side of the mems device
Method also includes：The anchor point material layer (40) extends to the first anchor point through hole (22) and the second anchor point through hole (32)
In, to be contacted with buffer medium layer (50).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710488194.8A CN107285269A (en) | 2017-06-23 | 2017-06-23 | Mems device and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710488194.8A CN107285269A (en) | 2017-06-23 | 2017-06-23 | Mems device and preparation method thereof |
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| Publication Number | Publication Date |
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| CN107285269A true CN107285269A (en) | 2017-10-24 |
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ID=60098185
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| WO2016100504A2 (en) * | 2014-12-17 | 2016-06-23 | Robert Bosch Gmbh | A mems gas chromatograph and method of forming a separator column for a mems gas chromatograph |
| CN106768116A (en) * | 2017-01-23 | 2017-05-31 | 卓度计量技术（深圳）有限公司 | Micro electronmechanical mass flow sensor component and preparation method thereof |
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2017
- 2017-06-23 CN CN201710488194.8A patent/CN107285269A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102625224A (en) * | 2012-03-31 | 2012-08-01 | 歌尔声学股份有限公司 | Chip and method for integrating capacitance silicon microphone and integrated circuit chip |
| CN202591100U (en) * | 2012-05-29 | 2012-12-12 | 中国电子科技集团公司第三十八研究所 | Molecular sieve filter |
| CN103576242A (en) * | 2013-10-25 | 2014-02-12 | 中国科学院半导体研究所 | Manufacturing method for light-blocking type micro-electro-mechanical variable light attenuator |
| WO2016100504A2 (en) * | 2014-12-17 | 2016-06-23 | Robert Bosch Gmbh | A mems gas chromatograph and method of forming a separator column for a mems gas chromatograph |
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Application publication date: 20171024 |