CN106768116A - Micro electronmechanical mass flow sensor component and preparation method thereof - Google Patents
Micro electronmechanical mass flow sensor component and preparation method thereof Download PDFInfo
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- CN106768116A CN106768116A CN201710052327.7A CN201710052327A CN106768116A CN 106768116 A CN106768116 A CN 106768116A CN 201710052327 A CN201710052327 A CN 201710052327A CN 106768116 A CN106768116 A CN 106768116A
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000002161 passivation Methods 0.000 claims abstract description 38
- 239000012528 membrane Substances 0.000 claims abstract description 36
- 239000000945 filler Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 22
- 239000004020 conductor Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000003466 welding Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000005328 electron beam physical vapour deposition Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 230000003831 deregulation Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- -1 laminate Chemical compound 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/76—Devices for measuring mass flow of a fluid or a fluent solid material
- G01F1/86—Indirect mass flowmeters, e.g. measuring volume flow and density, temperature or pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F15/00—Details of, or accessories for, apparatus of groups G01F1/00 - G01F13/00 insofar as such details or appliances are not adapted to particular types of such apparatus
Abstract
The embodiment of the present invention provides micro electronmechanical mass flow sensor component and preparation method thereof.The micro electronmechanical mass flow sensor component includes：Sensor chip and carrier, the sensor chip include：Substrate；It is arranged on the support membrane and thermistor of the first surface of the substrate；It is arranged at least two sensing elements and heater on the support membrane；The through hole that described substrate one end is through to relative second surface by the first surface is arranged on, the side of the filler of the through hole is provided with the b contact of sensor chip；Being covered on the sensing element, heater and thermistor makes the sensing element, heater and thermistor be connected to the conductive layer of the filler of the through hole；It is covered in the passivation layer of the sensor chip upper surface；And, the carrier is connected by pad with the b contact of sensor chip.
Description
Technical field
The present invention relates to micro-electro-mechanical sensors field, in particular to a kind of micro electronmechanical mass flow sensor component
And preparation method thereof.
Background technology
Micro electronmechanical mass flow sensor is used for the detection of gas.In micro electronmechanical mass flow sensor of the prior art
All parts linked together by wire, the wire of some micro electronmechanical mass flow sensors is directly exposed to gas medium
In, and moisture, other conductive mist, particles that gas to be tested may contain etc. can cause wire short circuit.Prior art
In other micro electronmechanical mass flow sensors be to being sealed at conductor interface, but rosin joint, close of wire when welding
Leakage occur in the Stress Release of closure material and sealing can reduce the reliability of device.
The content of the invention
In view of this, the purpose of the embodiment of the present invention is to provide a kind of micro electronmechanical mass flow sensor component and its system
Make method.
The embodiment of the present invention provides a kind of micro electronmechanical mass flow sensor component, the micro electronmechanical mass flow sensor
Component includes：Sensor chip and carrier；
The sensor chip includes：
Substrate；
It is arranged on the support membrane and thermistor of the first surface of the substrate；
It is arranged at least two sensing elements and heater on the support membrane；
The through hole that described substrate one end is through to relative second surface by the first surface is arranged on, the through hole
The side of filler is provided with the b contact of sensor chip；
Being covered in makes the sensing element, heater and thermistor on the sensing element, heater and thermistor
It is connected to the conductive layer of the filler of the through hole；
It is covered in the passivation layer of the sensor chip upper surface；And
The carrier is connected by pad with the b contact of sensor chip.
Preferably, the first surface and second surface of the substrate of the sensor are provided with base passivation layer, the substrate
The thickness of passivation layer is 100 nanometers to 300 nanometers.
Preferably, be provided with thermistor on the base passivation layer of the first surface of the substrate, the thermistor with
The conductive layer is connected.
Preferably, the sensing element and heater are thermistor, the sensing element and the corresponding temperature-sensitive of heater
Resistance is 100 nanometers to 300 nanometers with the thickness of the thermistor being arranged on base passivation layer.
Preferably, the substrate be provided with the cavity that is extended to first surface from the second surface and by the cavity with
The dead slot of external world's connection, the dead slot is arranged on the sensing element side.
Preferably, the cavity be arranged on the sensing element and heater just to position, the width of the cavity is big
In the overall width that sensing element and heater occupy, 1.5 times of the overall width occupied less than the sensing element and heater.
Preferably, the package dimension of the micro electronmechanical mass flow sensor component is 1.5 × 1.5 millimeters to 2 × 2 millis
Rice.
Preferably, the micro electronmechanical mass flow sensor component also includes：For sealing the sensor chip and carrying
The sealer of the junction of body.
Preferably, it is additionally provided with control circuit on the carrier.
The present invention also provides a kind of method for making micro electronmechanical mass flow sensor component, and methods described includes：
One substrate is provided；
The through hole through the substrate is formed on the substrate；
Filler is filled in the through hole；
Support membrane is made in the first surface of the substrate；
The dead slot of insertion support membrane is made away from the side of substrate from the support membrane；
At least two sensing elements and heater are produced on the support membrane, thermistor are produced on described
On the first surface of substrate；
Formation is covered in makes the sensing element, heater and temperature-sensitive on the sensing element, heater and thermistor
Resistance is connected to the conductive layer of the filler of the through hole, to form multiple conductive paths；
It is blunt in the surface covering one of the conductive layer, at least two sensing elements, heater and thermistor side
Change layer；
In the cavity that the substrate fabrication is connected with the dead slot, the cavity is located under the sensing element and heater
Side；
One carrier is welded by pad with the sensor chip b contact of the side of the filler for being arranged on the through hole
It is connected together.
Compared with prior art, micro electronmechanical mass flow sensor component of the invention and preparation method thereof, by realizing
The conductive layer, the through hole, the filler, the b contact, eliminate the relevant configuration of wire welding, so that effectively
Avoid by breakdown of conducting wires cause it is short-circuit, unstable the problems such as.
To enable the above objects, features and advantages of the present invention to become apparent, preferred embodiment cited below particularly, and coordinate
Appended accompanying drawing, is described in detail below.
Brief description of the drawings
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below will be attached to what is used needed for embodiment
Figure is briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, thus be not construed as it is right
The restriction of scope, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to this
A little accompanying drawings obtain other related accompanying drawings.
The structural representation of the micro electronmechanical mass flow sensor component that Fig. 1 is provided for first embodiment of the invention.
Fig. 2-Figure 11 is to manufacture the corresponding structural representation of micro electronmechanical each step of mass flow sensor component.
The flow chart of the micro electronmechanical mass flow sensor assembly making method that Figure 12 is provided for second embodiment of the invention.
Icon：100- substrates；200- fillers；210- conductive layers；110- base passivations layer；111- base passivations layer；
120- support membranes；130- passivation layers；140- dead slots；141- dead slots；150- cavitys；310- thermistors；311- sensing elements；
312- heaters；313- sensing elements；400- carriers；410- controls circuit；420- insulating barriers；430- pads；401- through holes；
500- sealers.
Specific embodiment
Below in conjunction with accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Description, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Generally exist
The component of the embodiment of the present invention described and illustrated in accompanying drawing can be arranged and designed with a variety of configurations herein.Cause
This, the detailed description of the embodiments of the invention to providing in the accompanying drawings is not intended to limit claimed invention below
Scope, but it is merely representative of selected embodiment of the invention.Based on embodiments of the invention, those skilled in the art pay no
The every other embodiment obtained on the premise of going out creative work, belongs to the scope of protection of the invention.
It should be noted that：Identical label represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi accompanying drawing
In be defined, then it need not further be defined and is explained in subsequent accompanying drawing.Meanwhile, in description of the invention
In, term " first ", " second " etc. are only used for distinguishing description, and it is not intended that indicating or implying relative importance.
First embodiment
As shown in figure 1, the structure of micro electronmechanical mass flow sensor component that Fig. 1 is provided for present pre-ferred embodiments is shown
It is intended to.The micro electronmechanical mass flow sensor component of the present embodiment includes：Sensor chip and carrier 400.
In the present embodiment, the material of the substrate 100 can be silicon.In one embodiment, the substrate 100 is to lead
Electricity, i.e., other materials are doped with silicon base, for example, phosphorus or boron etc., wherein, preferably dopant is boron.In another kind
In implementation method, the substrate 100 is non-conductive, the silicon base of the other materials that such as undope.
In the present embodiment, the substrate 100 includes first surface and the second surface set relative to the first surface.Such as
Shown in Fig. 2, the first surface and second surface of the substrate 100 are respectively arranged with base passivation layer 110,111.
In one embodiment, when the material of substrate 100 is silicon, low pressure can be passed through in first surface and second surface
Cvd silicon nitride is passivated treatment, generates the base passivation layer 110,111.Further, the substrate
The thickness of passivation layer 110,111 can be between 100 nanometers to 300 nanometers.Preferably, base passivation layer 110,111
Thickness is set to 200 nanometers.
In the present embodiment, one end of the substrate 100 offers the through hole 401 through the substrate 100 (such as Fig. 3 institutes
Show), for adding filler 200.The through hole 401 can be made in the embodiment of the present invention by following several techniques：Can be with
Directly the substrate 100 is got through to second surface from the first surface forms the through hole for running through；Can also be first by described first
The half of the substrate 100 is got through on surface to second surface, then again will be remaining in the through hole by chemical-mechanical planarization
Base part removal.Further, the width of the through hole 401 can be between 50 nanometers to 2000 nanometers, it is preferable that institute
The width for stating through hole 401 is 1000 nanometers.
In one embodiment, the substrate 100 is non-conductive, and the filler 200 of addition is in the through hole 401
Conductive material.The conductive material can be the metals such as nickel and iron-nickel alloy, the conductive polysilicon of high doped, poly- pyrene and gather
The conductive polymer such as carbazole.In another embodiment, when the substrate 100 is highly conductive, the through hole 401 should be opened
The filler 200 added in it for the groove of ring-type is insulating materials.The insulating materials can be silica or non-conductive
Polymer such as polyimides.The width of the dead ring preferably between 100 nanometers to 500 nanometers, but most preferably 300 nanometers.
Further, Supported film 120 is set on the first surface of the substrate 100.The support membrane 120 be used for every
Heat.The material of the support membrane 120 should be while inherent strain be small with enough mechanical strengths.The support membrane 120
Material can be silicon nitride, or polyimides.Preferably, the support membrane 120 can be using thickness at 1000 nanometers
Polyimides between 10000 nanometers.Further, the thickness of the support membrane 120 is preferably 3000 nanometers.A kind of real
Apply in mode, when the material of the support membrane 120 is silicon nitride, silicon nitride support can be made using low-pressure chemical vapor deposition
Film.In another embodiment, when the material of the support membrane 120 is polyimides, polyamides can be made by spin-coating method
Imines support membrane.
The support membrane 120 is etched to the shape of uniqueness to place sensing element and heater.In a kind of implementation method
In, the support membrane 120 can be processed by dry etching or other possible techniques such as wet etching.On the support membrane 120
It is provided with least two sensing elements (two sensing elements 311,313 shown in Fig. 7) and heater 312.
Further, the heater 312 is arranged between described two sensing elements 311,313.In an example,
Gasmetry is carried out using the micro electronmechanical mass flow sensor component, gas is by the micro electronmechanical mass flow sensor group
(one end of sensing element 313 is such as flowed to by the one end of sensing element 311) when one end of part flows to the other end, the sensing element 311
The temperature before the gas heating is detected, the gas that the heater 312 pairs is flowed through is heated, the sensing element
Gas after 313 pairs of heating carries out temperature detection.The gas temperature difference detected by sensing element 311,313, it is possible to
Calculate the mass flow of the gas for flowing through.
The sensing element 311,313 and heater 312 are thermistor.The material of the thermistor is preferably temperature
Coefficient material high (such as conductive polycrystalline silicon of platinum, gold, nickel, permalloy and doping), by electron beam evaporation or physical vapor
Deposition is made.Further, the thickness of each thermistor can be between 100 nanometers to 300 nanometers, it is preferable that institute
The thickness for stating thermistor is 200 nanometers.
Further, Fig. 7 is referred to, a single thermistor 310 is additionally provided with the base passivation layer 110.
The thermistor 310 is used for measuring environment temperature and the environment temperature is fed back into the de-regulation degree of heat of heater 312,
To set up a temperature field for stabilization.Further, the material of the thermistor 310 is preferably also temperature coefficient material high
(such as conductive polycrystalline silicon of platinum, gold, nickel, permalloy and doping), is made up of electron beam evaporation or physical vapour deposition (PVD).
In the present embodiment, also covered on described two sensing elements 311 and 313, heater 312 and thermistor 310
Having makes described two sensing elements 311 and 313, heater 312 and thermistor 310 be respectively connecting to the filler 200
Conductive layer 210.Wherein described heater 312 and thermistor 310 form single galvanic circle with the filler 200 respectively
(conductive layer 210 on the heater 312 and thermistor 310 is covered in not shown in figure).In one embodiment, institute
It is non-conductive to state substrate 100, and when the filler 200 of addition is conductive material in the through hole 401, the conductive layer 210 will sense
Element 311 and 313, heater 312 and thermistor 310 is answered to be respectively connecting to form conductive path at the filler 200.
In one example, before the operation of the conductive layer 210 is generated, should first make the two ends gold of the conductive material for penetrating substrate 100
The categoryization connection good with the conductive layer 210 to ensure the conductive material.In another embodiment, the substrate
100 is highly conductive, and the through hole 401 is the groove of ring-type, when filler 200 of addition is insulating materials in it, the conduction
Layer 210 covering in the circular substrate 100 of through hole ring 401, made the sensing element 311 and 313, heater 312 and
Thermistor 310 is connected to and is formed conductive path in the circular substrate 100 of through hole ring 401.
The conductive layer 210 makes two sensing elements 311,313 be connected to the filler 200, makes described two sensings
Element 311,313 forms shunt circuit.The conductive layer 210 makes the heater 312 be connected to the filler 200 to be formed solely
Stand on the loop of sensing element.It is possible to further set what multiple was filled by the filler 200 in the substrate 100
Through hole (only shows one) in figure.
The conductive layer 210 can pass through electron beam evaporation or physical vapour deposition (PVD) system by gold or the conductive polycrystalline silicon of doping
Into.The thickness of the conductive layer 210 can be between 100 nanometers to 300 nanometers, conductive layer 210 described in preferred example
Thickness is 200 nanometers.
The upper surface of the sensor chip is additionally provided with passivation layer 130.Preferably, the passivation layer 130 should cover completely
Cover the sensor chip upper surface.The material of the passivation layer 130 can be heat conduction.Preferably, the passivation layer 130
Material is by the silicon nitride or carborundum of plasma enhanced chemical vapor deposition.In the present embodiment, the passivation layer 130
Between 100 nanometers to 500 nanometers, the thickness of passivation layer 130 described in a preferred example is 300 nanometers to thickness.It is logical
The upper surface setting passivation layer 130 crossed in the sensor chip can prevent micro electronmechanical mass flow sensor to be subject to sensing element
Between 311 and 313, heater 312, thermistor 310 and conductive layer 210 surface short circuit influence and damage.
In addition, the substrate 100 is additionally provided with described in the cavity 150 and general extended from the second surface to first surface
The dead slot 140 and 141 that the in the vertical direction of cavity 150 is in communication with the outside.The dead slot 140 and 141 is arranged on the sensing unit
The side of part 311 and 313, and support membrane 120 described in insertion and base passivation layer 110.In an example, the dead slot
140 and 141 can be made using dry etching.The dead slot 140 and 141 can penetrate the support membrane 120 and substrate is blunt
Change the hole of the arbitrary shape of layer 110, preferably rectangular or circular hole.Fluid media (medium) can be made by the dead slot 140 and 141
Beneath cavity 150 is promptly filled, so that the top of support membrane 120 is equal with the pressure of the lower section of base passivation layer 110, with true
Protecting support membrane 120 and base passivation layer 110 when micro electronmechanical mass flow sensor is measured will not deform, so as to reduce micro electronmechanical matter
Measure the measurement error of flow sensor.In addition, the dead slot 140 and 141 is arranged on around the heater 312, measure
When heater 312 produce temperature field will be isolated, just can obtain more preferable Measurement Resolution and/or sensitivity.
Further, the cavity 150 is in the underface of sensing element 311,313 and heater 312.Using described micro-
During electromechanical mass flow sensor component measurement gas, the gas fills the cavity 150 by the dead slot 140 and 141,
The gas phase in gas and external environment condition inside substrate 100 is same, realizes that the inside of substrate 100 is close with the pressure of outside.Institute
State cavity 150 to be thermally isolated to provide by by fluid media (medium) (single or mixed gas) filling, it is possible to ensure described micro electronmechanical
The sensitivity of mass flow sensor component and resolution ratio.The cavity 150 can carry out deep reactive ion quarter by substrate 100
Erosion using chemical agents such as potassium hydroxide, TMAHs carries out wet chemical etch and makes.
Preferably, the width of the cavity 150 is more than the beam overall that the sensing element 311,313 and heater 312 occupy
Degree, and 1.5 times of overall width that no more than described sensing element 311,313 and heater 312 occupy.
In other embodiments, those skilled in the art can also set more thermistors.In the present embodiment,
The micro electronmechanical mass flow sensor component only needs to use 4 thermistors 311,313,312 of minimal amount when measuring
And 310, then the package dimension of micro electronmechanical mass flow sensor component can be 1.5 × 1.5 millimeters；If wherein described micro-
Electromechanical mass flow sensor component needs to use if 7 thermistors, then the micro electronmechanical mass flow sensor group
Part package dimension can expand to 2 × 2 millimeters.
In the present embodiment, the material of the carrier 400 can be the ceramic or traditional printed circuit board material such as silicon nitride,
Such as laminate, B b stage resin bs impregnated cloth or other copper-based materials.The thickness of the carrier 400 should be different according to different application, this
The technical staff in field can set according to demand.
Further, the carrier 400 can include the control circuit 410 being arranged on the carrier 400.The control
Circuit 410 can be the copper-based material of surface gold-plating.The need for the control circuit 410 is according to different application, can be by simple
Connecting line be connected with carrier, or directly using the carrier with pre-designed control electronics as control circuit 410.It is described
The surface of carrier 400 is provided with insulating barrier 420.The insulating barrier 420 can be used to prevent any contact short circuit being likely to occur.
As shown in figure 11, the sensing of the micro electronmechanical mass flow sensor component that Figure 11 is provided for present pre-ferred embodiments
Device chip be connected with carrier 400 before view.The upper surface of the carrier 400 is provided with pad 430.A kind of real
Apply in mode, when the filler 200 is conductive material, the side away from the first surface under the conductive material is set
There is b contact.Further, the b contact should be processed with gold or aluminium makes it metallize, preferably with gold.The carrier
400 are connected with the direct welding of the b contact by the pad 430 with the sensor chip.
Further, referring to Fig. 1, the micro electronmechanical mass flow sensor component also includes being arranged on the biography
The sealer 500 of the junction of sensor chip and carrier 400.The sealer 500 can be epoxy or similar material
Material.The sealer 500 should be able to prevent the contact short circuit or failure that cause (in the presence of if any vapor) because leaking electricity to sensor
The damage that component is caused.Sealer 500 is set by the junction of the sensor chip and carrier 400, makes the microcomputer
Electricity quality flow sensor assembly can also realize measurement under with the presence of the varying environment such as vapor or conductor fluid medium.
Micro electronmechanical mass flow sensor component in above-described embodiment, by setting the conductive layer, described logical
Hole, the filler and the b contact come eliminate wire welding relevant configuration, drawn by breakdown of conducting wires so as to be prevented effectively from
Rise it is short-circuit, unstable the problems such as.
Second embodiment
The embodiment of the present invention provides a kind of micro electronmechanical mass flow sensor assembly making method.Method in the present embodiment
Micro electronmechanical mass flow sensor component for making above-described embodiment offer.As shown in figure 12, methods described includes following
Step：
S101 a, there is provided substrate 100, forms the through hole 401 through the substrate in the substrate 100.
Specifically, base passivation layer 110,111 is respectively provided with the relative first surface of the substrate 100 and second surface,
As shown in Figure 2.The through hole 401 run through to the second surface from the first surface is opened up in the substrate 100, such as Fig. 3
It is shown.
S102, the filling filler in the through hole 401, as shown in Figure 4.
In the present embodiment, the filler can be conductive material, or non-conducting material.
S103, is made support membrane 120, as shown in Figure 5 in the first surface of the substrate 100.
S104, etches away from the side of substrate 100 from the support membrane 120 and is deep to 110 nearly base of the base passivation layer
The dead slot 140,141 of the side of bottom 100, and the unnecessary part of the support membrane 120 is etched away, as shown in Figure 6.
S105, two sensing elements 311,313 and heater 312 is produced on the support membrane 120, by one
Single thermistor 310 is produced on the surface of the base passivation layer 110, as shown in Figure 7.
In other embodiments, it is also possible to which multiple sensing elements are set.The present embodiment is described as a example by two.
S106, formation is covered in the sensing element 311 and 313, heater 312 and thermistor 310 and extends to institute
The conductive layer 210 that the position of through hole 401 contacts with the filler is stated, as shown in Figure 8.
When the filler be conductive material when, by the conductive layer 210 make described two sensing elements 311 and 313,
Heater 312 and thermistor 310 are connected with the conductive material respectively, form multiple conductive paths.
S107, where 210, two sensing elements 311 and 313, heater 312 of the conductive layer and thermistor 310
The surface of side covers a passivation layer 130, as shown in Figure 9.
S108, the cavity 150 extended to first surface from the second surface, the cavity are made in the substrate 100
150 connect and below sensing element 311,313 and heater 312 with the dead slot 140 and 141, as shown in Figure 10.
In detail, because the span of the cavity 150 is larger, the base passivation layer 110, support membrane 120, sensing element
311 and 313, heater 312 and passivation layer 130 material must while high mechanical strength inherent strain it is minimum, to prevent
The base passivation layer 110, support membrane 120, sensing element 311 and 313, heater 312 and passivation layer 130 are in the cavity
Collapsed after 150 formation.
S109, pad 430 and the sensor chip of the filler side for being arranged on the through hole 401 are passed through by a carrier
B contact is welded directly together, as shown in figure 11.
The description of the making generation type of the micro electronmechanical mass flow sensor component on the present embodiment can be further
Ground will not be repeated here with reference to the description of first embodiment combination Fig. 1.
According to the micro electronmechanical mass flow sensor group that above-mentioned micro electronmechanical mass flow sensor assembly making method makes
Part, the correlation of wire welding is eliminated by setting the conductive layer, the through hole, the filler and the b contact
Configuration, so as to be prevented effectively from by breakdown of conducting wires cause it is short-circuit, unstable the problems such as.
The preferred embodiments of the present invention are the foregoing is only, is not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.It is all within the spirit and principles in the present invention, made any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.It should be noted that：Identical label is following
Similar terms is represented in accompanying drawing, therefore, once be defined in a certain Xiang Yi accompanying drawing, then need not be to it in subsequent accompanying drawing
Further defined and explained.
The above, specific embodiment only of the invention, but protection scope of the present invention is not limited thereto, and it is any
Those familiar with the art the invention discloses technical scope in, the change or replacement that can be readily occurred in, all should
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be with the scope of the claims
It is accurate.
Claims (10)
1. a kind of micro electronmechanical mass flow sensor component, it is characterised in that the micro electronmechanical mass flow sensor component bag
Include：Sensor chip and carrier；
The sensor chip includes：
Substrate；
It is arranged on the support membrane and thermistor of the first surface of the substrate；
It is arranged at least two sensing elements and heater on the support membrane；
It is arranged on the through hole that described substrate one end is through to relative second surface by the first surface, the filling of the through hole
The side of thing is provided with the b contact of sensor chip；
Being covered on the sensing element, heater and thermistor connects the sensing element, heater and thermistor
To the conductive layer of the filler of the through hole；
It is covered in the passivation layer of the sensor chip upper surface；And
The carrier is connected by pad with the b contact of sensor chip.
2. micro electronmechanical mass flow sensor component as claimed in claim 1, it is characterised in that the substrate of the sensor
First surface and second surface are provided with base passivation layer, and the thickness of the base passivation layer is 100 nanometers to 300 nanometers.
3. micro electronmechanical mass flow sensor component as claimed in claim 2, it is characterised in that the first surface of the substrate
Base passivation layer on be provided with thermistor, the thermistor is connected with the conductive layer.
4. micro electronmechanical mass flow sensor component as claimed in claim 3, it is characterised in that the sensing element and heating
Device is thermistor, the sensing element and the corresponding thermistor of heater and the thermistor being arranged on base passivation layer
Thickness be 100 nanometers to 300 nanometers.
5. micro electronmechanical mass flow sensor component as claimed in claim 1, it is characterised in that the substrate is provided with by institute
The cavity that second surface extends to first surface and the dead slot that the cavity is in communication with the outside are stated, the dead slot is arranged on described
Sensing element side.
6. micro electronmechanical mass flow sensor component as claimed in claim 5, it is characterised in that the cavity is arranged on described
Sensing element and heater just to position, the width of the cavity is small more than the overall width that sensing element and heater occupy
1.5 times of the overall width occupied in the sensing element and heater.
7. micro electronmechanical mass flow sensor component as claimed in claim 1, it is characterised in that the micro electronmechanical mass flow
The package dimension of sensor cluster is 1.5 × 1.5 millimeters to 2 × 2 millimeters.
8. the micro electronmechanical mass flow sensor component as described in claim 1-7 any one, it is characterised in that also include：
Sealer for sealing the sensor chip and the junction of carrier.
9. micro electronmechanical mass flow sensor component as claimed in claim 1, it is characterised in that be additionally provided with the carrier
Control circuit.
10. a kind of method for making micro electronmechanical mass flow sensor component, it is characterised in that methods described includes：
One substrate is provided；
The through hole through the substrate is formed on the substrate；
Filler is filled in the through hole；
Support membrane is made in the first surface of the substrate；
The dead slot of insertion support membrane is made away from the side of substrate from the support membrane；
At least two sensing elements and heater are produced on the support membrane, thermistor is produced on the substrate
First surface on；
Formation is covered in makes the sensing element, heater and thermistor on the sensing element, heater and thermistor
The conductive layer of the filler of the through hole is connected to, to form multiple conductive paths；
A passivation layer is covered on the surface of the conductive layer, at least two sensing elements, heater and thermistor side；
In the cavity that the substrate fabrication is connected with the dead slot, the cavity is located at the sensing element and heater lower section；
One carrier is welded on by pad with the sensor chip b contact of the side of the filler for being arranged on the through hole
Together.
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| CN201710052327.7A CN106768116A (en) | 2017-01-23 | 2017-01-23 | Micro electronmechanical mass flow sensor component and preparation method thereof |
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| CN111964742A (en) * | 2020-07-29 | 2020-11-20 | 矽翔微机电(杭州)有限公司 | MEMS flow sensing chip, manufacturing method thereof and flow sensor |
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Application publication date: 20170531 |