CN103630967A - MEMS adjustable nitride optical waveguide device and method for preparing same - Google Patents
MEMS adjustable nitride optical waveguide device and method for preparing same Download PDFInfo
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- CN103630967A CN103630967A CN201310107095.2A CN201310107095A CN103630967A CN 103630967 A CN103630967 A CN 103630967A CN 201310107095 A CN201310107095 A CN 201310107095A CN 103630967 A CN103630967 A CN 103630967A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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Abstract
The invention provides a MEMS adjustable nitride optical waveguide device and a method for preparing the same. A carrier for realizing the device is a high-resistance silicon substrate nitride wafer. The wafer comprises a top layer nitride device layer and a silicon substrate layer. An upper surface of the top layer nitride device layer is provided with an optical waveguide device and a micro-nano driving device structure, and through combining a back alignment technology and a deep silicon etching technology, the silicon substrate layer under the nitride optical waveguide device and the micro-nano driving device is removed, and a suspended nitride optical waveguide device is obtained. A nitride back reduction etching technology is used to obtain the separated nitride optical waveguide device and the micro-nano driving device, so that constraint of the nitride optical waveguide device on an optical field is realized. A distance between adjacent waveguide devices can be regulated and controlled by a MEMS driver. Since changes of a coupling distance, regulation for optical properties of the optical waveguide device is realized.
Description
Technical field
The present invention relates to micro electronmechanical adjustable nitride fiber waveguide device and preparation method thereof, belong to information material and device technology field.
Background technology
Nitride material, particularly gallium nitride material, have good optical property near infrared and visible light wave range, and application prospect is extensive.Be grown in the nitride material on HR-Si substrate, utilize dark silicon etching technology, can solve the problem of peeling off of silicon substrate and nitride material, obtain unsettled nitride film; Utilize the high index of refraction difference of nitride material and air, can realize stronger light field constraint, for developing the nitride fiber waveguide device of near infrared and visible light wave range, provide possibility.
The refractive index of silicon substrate is greater than the refractive index of nitride material, has limited the development of silicon substrate nitride fiber waveguide device; In addition, because the thickness of silicon substrate nitride device layer is determined by growth conditions conventionally, thickness degree of freedom is less, for design nitride fiber waveguide device brings difficulty.
Utilize unsettled nitride film thinning technique behind, realize the separation between nitride fiber waveguide device and micro-nano driving element, for device regulation and control provide spatial degrees of freedom; Utilize HR-Si substrate can realize the insulation isolation of nitride device, the electrostatic attraction between performance nitride device structure, in conjunction with the good mechanical property of nitride material, development nitride micro-nano driving element; By electrostatic attraction, micro-nano driver produces physical displacement, utilizes spring structure, changes the coupling distance between adjacent nitride fiber waveguide device, realizes the regulation and control to nitride fiber waveguide device optical property.
Summary of the invention
The object of the invention has realized silicon substrate and has peeled off mutually with nitride device layer, utilizes the difference of nitride film and air refraction, develops unsettled nitride fiber waveguide device; Utilize the optical property of nitride material, nitride fiber waveguide device can be operated in visible ray and infrared band.
The invention provides a kind of micro electronmechanical adjustable nitride fiber waveguide device, its structure is by electrode, supporting construction, removable broach, fixed fingers, semi-girder, removable waveguide, annulus, grating, oval supporting construction forms, electrode is connecting fixed fingers, fixed fingers and removable broach cross arrangement, removable broach is connected with supporting construction, semi-girder is connected with the supporting construction other end, the other end of semi-girder is connected with oval supporting construction, the other two ends of oval supporting construction are connected with removable waveguide, the other end of removable waveguide is mutually close with the grating on both sides, annulus is mutually close with removable waveguide.This device can also comprise driver, waveguide-coupled.Its device material is comprised of high index of refraction layer-of-substrate silicon and nitride device layer; Driver is comprised of electrode, fixed fingers, removable broach, supporting construction, spring; Fixed fingers and removable broach are all rectangular configuration; The waveguide two ends of this device have coupling grating, and grating is linear structure.
The carrier of realizing of the present invention is HR-Si substrate nitride wafers, and this wafer is comprised of top layer nitride device layer and layer-of-substrate silicon; Realize peeling off of high index of refraction layer-of-substrate silicon and nitride device layer, utilize the refractive index difference of nitride device layer and air, realize unsettled nitride fiber waveguide device; Distance between adjacent waveguide device can regulate and control by micro electronmechanical driver, due to the change of coupling distance, thereby realizes the regulation and control to fiber waveguide device optical property.Wherein, nitride micro-nano driving element comprises fixed fingers, removable broach, spring structure and clamping waveguiding structure.By on-load voltage on electrode, removable broach will move to fixed fingers direction under the effect of supporting, and pulls semi-girder to move up.In fiber waveguide device, by optical fiber, light signal is coupled to above grating, enter optical waveguide.Under the pulling of semi-girder, optical waveguide is near annulus like this, and light signal changes.So can pass through to change the coupling distance of nitride fiber waveguide device, thereby change the optical property of fiber waveguide device.
Process provided by the invention adopts electron beam exposure or photoetching technique definition fiber waveguide device and micro-nano driving element structure; Micro-nano driving element structure comprises fixed fingers, removable broach, spring structure and clamping waveguiding structure; And adopt ion beam bombardment or reactive ion beam etching (RIBE) method, and device architecture is transferred to nitride device layer, etching depth depends on the thickness of concrete device designing requirement; Can adopt corresponding film forming and lithographic technique, define and realize fiber waveguide device and micro-nano driving element, then adopt ion beam bombardment or reactive ion beam etching (RIBE) method, obtain nitride fiber waveguide device and the micro-nano driving element of desired thickness; In conjunction with lithography alignment technology, definition isolation channel, and adopt reactive ion beam technology etching nitride device layer to silicon substrate, realize device isolation groove; In conjunction with aiming at behind and dark silicon etching technology, remove nitride fiber waveguide device and micro-nano driving element below layer-of-substrate silicon, obtain unsettled nitride fiber waveguide device and micro-nano driving element; Adopt nitride attenuate lithographic technique behind, obtain separated nitride fiber waveguide device and micro-nano driving element; By micro electronmechanical driver, change the coupling distance between adjacent waveguide device, realize the regulation and control to fiber waveguide device optical property; Utilize thinning technique behind, realize the separated of nitride fiber waveguide device and micro-nano driving element, obtain unsettled nitride micro-nano electrostatic actuator and fiber waveguide device; And integrated by micro electromechanical structure and fiber waveguide device, realize the controlled of fiber waveguide device coupling distance, thereby change the optical property of fiber waveguide device.
The present invention also provides a kind of its preparation process of micro electronmechanical adjustable nitride fiber waveguide device, and it comprises the steps:
Step 1: first described silicon substrate nitride wafers carries out behind polishing attenuate, to utilize dark silicon etching technology behind, removes layer-of-substrate silicon;
Step 2: at top layer nitride device layer spin coating one deck electron beam resist of described silicon substrate nitride wafers;
Step 3: utilize electron beam exposure or photoetching technique definition fiber waveguide device and micro-nano driving element structure.Wherein, micro-nano driving element structure comprises fixed fingers, removable broach, spring structure and clamping waveguiding structure;
Step 4: adopt ion beam bombardment or reactive ion beam etching technique that the fiber waveguide device in step 2 and micro-nano driving element structure are transferred to top layer nitride device layer, etching depth depends on desired thickness of detector;
Step 5: utilize oxygen plasma ashing method to remove remaining glue-line;
Step 6: adopt photoetching technique, definition device isolation groove, and adopt reactive ion beam etching technique etching nitride device layer to silicon substrate;
Step 7: device layer Coating glue protect, in conjunction with aiming at and dark silicon etching technology, remove the layer-of-substrate silicon of fiber waveguide device and micro-nano driving element structure below behind, realize unsettled nitride film;
Step 8: adopt nitride thining method behind, utilize ion beam bombardment or reactive ion beam etching technique, attenuate nitride, obtains separated fiber waveguide device and micro-nano driving element structure behind;
Step 9: utilize oxygen plasma ashing method to remove remaining glue-line, realize micro electronmechanical adjustable nitride fiber waveguide device.
Usefulness of the present invention is:
1. the present invention defines fiber waveguide device and micro-nano driving element structure, by mask layer lithographic technique, carve and wear mask layer to nitride device layer, then adopt ion beam bombardment or reactive ion beam etching (RIBE) method, obtain nitride fiber waveguide device and micro-nano driving element structure.
2. the present invention, in conjunction with micro electronmechanical adjustable nitride device and fiber waveguide device, realizes micro electronmechanical adjustable nitride fiber waveguide device, by micro electro mechanical device, fiber waveguide device is regulated, and realizes the regulation and control to optical property.
3. the present invention, in conjunction with behind thinning technique, utilizes the difference of different materials physical characteristics, realizes the separated of micro electronmechanical driver and fiber waveguide device.
Accompanying drawing explanation
Fig. 1 is the structural representation of micro electronmechanical adjustable nitride fiber waveguide device.
Description of reference numerals: 1-electrode; 2-supporting construction; The removable broach of 3-; 4-fixed fingers; 5-semi-girder; The removable waveguide of 6-; 7-annulus; 8-grating; The oval supporting construction of 9-.
Fig. 2 is micro electronmechanical adjustable nitride fiber waveguide device preparation method's process chart.
Embodiment
Below in conjunction with Figure of description, the invention is described in further detail.
embodiment mono-
As shown in Figure 1, the invention provides a kind of micro electronmechanical adjustable nitride fiber waveguide device, its structure is by electrode 1, supporting construction 2, removable broach 3, fixed fingers 4, semi-girder 5, removable waveguide 6, annulus 7, grating 8, oval supporting construction 9 forms, electrode 1 is connecting fixed fingers 4, removable broach 3 is connected with supporting construction 2, semi-girder 5 is connected with supporting construction 2 other ends, the other end of semi-girder 5 is connected with oval supporting construction 9, the other two ends of oval supporting construction are connected with removable waveguide 6, the other end of removable waveguide 6 is mutually close with the grating on both sides 8, annulus 7 is mutually close with removable waveguide 6.The carrier of realizing of the present invention is HR-Si substrate nitride wafers, and this wafer is comprised of top layer nitride device layer and layer-of-substrate silicon; Realize peeling off of high index of refraction layer-of-substrate silicon and nitride device layer, utilize the refractive index difference of nitride device layer and air, realize unsettled nitride fiber waveguide device; Distance between adjacent waveguide device can regulate and control by micro electronmechanical driver, due to the change of coupling distance, thereby realizes the regulation and control to fiber waveguide device optical property.Wherein, nitride micro-nano driving element comprises fixed fingers, removable broach, spring structure and clamping waveguiding structure.
The object of the invention has realized silicon substrate and has peeled off mutually with nitride device layer, utilizes the difference of nitride film and air refraction, develops unsettled nitride fiber waveguide device; Utilize the optical property of nitride material, nitride fiber waveguide device can be operated in visible ray and infrared band.
Micro electronmechanical adjustable nitride fiber waveguide device of the present invention, by on-load voltage on electrode, removable broach will move to fixed fingers direction under the effect of supporting, and pulls semi-girder to move up.In fiber waveguide device, by optical fiber, light signal is coupled to above grating, enter optical waveguide.Under the pulling of semi-girder, optical waveguide is near annulus like this, and light signal changes.So can pass through to change the coupling distance of nitride fiber waveguide device, thereby change the optical property of fiber waveguide device.The regulation and control of realization to the optical property of fiber waveguide device.
Process provided by the invention adopts electron beam exposure or photoetching technique definition fiber waveguide device and micro-nano driving element structure; Micro-nano driving element structure comprises fixed fingers, removable broach, spring structure and clamping waveguiding structure; And adopt ion beam bombardment or reactive ion beam etching (RIBE) method, and device architecture is transferred to nitride device layer, etching depth depends on the thickness of concrete device designing requirement; Can be in conjunction with nitride mask lithographic technique, adopt silicon dioxide or hafnia film, as etch mask layer, can adopt corresponding film forming and lithographic technique, define and realize fiber waveguide device and micro-nano driving element, then adopt ion beam bombardment or reactive ion beam etching (RIBE) method, obtain nitride fiber waveguide device and the micro-nano driving element of desired thickness; In conjunction with lithography alignment technology, definition isolation channel, and adopt reactive ion beam technology etching nitride device layer to silicon substrate, realize device isolation groove; In conjunction with aiming at behind and dark silicon etching technology, remove nitride fiber waveguide device and micro-nano driving element below layer-of-substrate silicon, obtain unsettled nitride fiber waveguide device and micro-nano driving element; Adopt nitride attenuate lithographic technique behind, obtain separated nitride fiber waveguide device and micro-nano driving element; By micro electronmechanical driver, change the coupling distance between adjacent waveguide device, realize the regulation and control to fiber waveguide device optical property; Utilize thinning technique behind, realize the separated of nitride fiber waveguide device and micro-nano driving element, obtain unsettled nitride micro-nano electrostatic actuator and fiber waveguide device; And integrated by micro electromechanical structure and fiber waveguide device, realize the controlled of fiber waveguide device coupling distance, thereby change the optical property of fiber waveguide device.
embodiment bis-
As shown in Figure 2, the present invention also provides a kind of its preparation process of micro electronmechanical adjustable nitride fiber waveguide device, and it comprises the steps:
Step 1: first described silicon substrate nitride wafers carries out behind polishing attenuate, to utilize dark silicon etching technology behind, removes layer-of-substrate silicon;
Step 2: at top layer nitride device layer spin coating one deck electron beam resist of described silicon substrate nitride wafers;
Step 3: utilize electron beam exposure or photoetching technique definition fiber waveguide device and micro-nano driving element structure, micro-nano driving element structure comprises fixed fingers, removable broach, spring structure and clamping waveguiding structure;
Step 4: adopt ion beam bombardment or reactive ion beam etching technique that the fiber waveguide device in step 2 and micro-nano driving element structure are transferred to top layer nitride device layer, etching depth depends on desired thickness of detector;
Step 5: utilize oxygen plasma ashing method to remove remaining glue-line;
Step 6: adopt photoetching technique, definition device isolation groove, and adopt reactive ion beam etching technique etching nitride device layer to silicon substrate;
Step 7: device layer Coating glue protect, in conjunction with aiming at and dark silicon etching technology, remove the layer-of-substrate silicon of fiber waveguide device and micro-nano driving element structure below behind, realize unsettled nitride film;
Step 8: adopt nitride thining method behind, utilize ion beam bombardment or reactive ion beam etching technique, attenuate nitride, obtains separated fiber waveguide device and micro-nano driving element structure behind;
Step 9: utilize oxygen plasma ashing method to remove remaining glue-line, realize micro electronmechanical adjustable nitride fiber waveguide device.
Claims (10)
1. the invention provides a kind of micro electronmechanical adjustable nitride fiber waveguide device and preparation method thereof, it is characterized in that: its structure is by electrode (1), supporting construction (2), removable broach (3), fixed fingers (4), semi-girder (5), removable waveguide (6), annulus (7), grating (8), oval supporting construction (9) forms, electrode (1) is connecting one end of fixed fingers (4), one end of removable broach (3) is connected with supporting construction (2), semi-girder (5) is connected with the other end of supporting construction (2), the other end of semi-girder (5) is connected with oval supporting construction (9), the other two ends of oval supporting construction (9) are connected with removable waveguide (6), the other end of removable waveguide (6) is mutually close with the grating (8) on both sides, annulus (7) is mutually close with removable waveguide (6).
2. micro electronmechanical adjustable nitride fiber waveguide device according to claim 1 and preparation method thereof, is characterized in that: the carrier of realizing of this device is HR-Si substrate nitride wafers.
3. micro electronmechanical adjustable nitride fiber waveguide device according to claim 1 and preparation method thereof, is characterized in that: this device material is comprised of high index of refraction layer-of-substrate silicon and nitride device layer.
4. micro electronmechanical adjustable nitride fiber waveguide device according to claim 1 and preparation method thereof, is characterized in that: this device also comprises driver, waveguide-coupled and supporting construction.
5. micro electronmechanical adjustable nitride fiber waveguide device according to claim 1 and preparation method thereof, is characterized in that: this device driver is comprised of electrode (1), fixed fingers (4), removable broach (3), supporting construction (2), spring.
6. micro electronmechanical adjustable nitride fiber waveguide device according to claim 1 and preparation method thereof, is characterized in that: fixed fingers (4) and removable broach (3) cross arrangement.
7. micro electronmechanical adjustable nitride fiber waveguide device according to claim 1 and preparation method thereof, is characterized in that: fixed fingers (4) and removable broach (3) are all rectangular configuration.
8. micro electronmechanical adjustable nitride fiber waveguide device according to claim 1 and preparation method thereof, is characterized in that: the waveguide two ends of this device have coupling grating (8), and grating (8) is linear structure.
9. micro electronmechanical adjustable nitride fiber waveguide device according to claim 1 and preparation method thereof, it is characterized in that: supporting construction (2) is for linear rectangular, at upper and lower and two ends, left and right, have ten, left and right two end supports is thicker than upper lower support structure, is connected respectively with semi-girder (5).
10. a preparation method for micro electronmechanical adjustable nitride fiber waveguide device, is characterized in that, comprises the steps:
Step 1: first described silicon substrate nitride wafers carries out behind polishing attenuate, to utilize dark silicon etching technology behind, removes layer-of-substrate silicon;
Step 2: at top layer nitride device layer spin coating one deck electron beam resist of described silicon substrate nitride wafers;
Step 3: utilize electron beam exposure or photoetching technique definition fiber waveguide device and micro-nano driving element structure, micro-nano driving element structure comprises fixed fingers, removable broach, spring structure and clamping waveguiding structure;
Step 4: adopt ion beam bombardment or reactive ion beam etching technique that the fiber waveguide device in step 2 and micro-nano driving element structure are transferred to top layer nitride device layer, etching depth depends on desired thickness of detector;
Step 5: utilize oxygen plasma ashing method to remove remaining glue-line;
Step 6: adopt photoetching technique, definition device isolation groove, and adopt reactive ion beam etching technique etching nitride device layer to silicon substrate;
Step 7: device layer Coating glue protect, in conjunction with aiming at and dark silicon etching technology, remove the layer-of-substrate silicon of fiber waveguide device and micro-nano driving element structure below behind, realize unsettled nitride film;
Step 8: adopt nitride thining method behind, utilize ion beam bombardment or reactive ion beam etching technique, attenuate nitride, obtains separated fiber waveguide device and micro-nano driving element structure behind;
Step 9: utilize oxygen plasma ashing method to remove remaining glue-line, realize micro electronmechanical adjustable nitride fiber waveguide device.
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| CN201510357762.1A CN105044839A (en) | 2013-03-29 | 2013-03-29 | Preparing method for micro-electro-mechanical nitride adjustable optical waveguide device |
| CN201310107095.2A CN103630967A (en) | 2013-03-29 | 2013-03-29 | MEMS adjustable nitride optical waveguide device and method for preparing same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109243663A (en) * | 2018-09-16 | 2019-01-18 | 王维维 | The adjustable waveguides system that a kind of pair of X-ray nanoscale focuses |
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| WO2018049161A1 (en) * | 2016-09-12 | 2018-03-15 | Mems Drive, Inc. | Mems actuation systems and methods |
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| JP2001337242A (en) * | 2000-05-25 | 2001-12-07 | Minolta Co Ltd | Method for manufacturing optical coupling circuit |
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| CN1576920A (en) * | 2003-06-25 | 2005-02-09 | 三星电机株式会社 | Mems variable optical attenuator having movable optical waveguide and method for operating movable optical waveguide |
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| CN109243663A (en) * | 2018-09-16 | 2019-01-18 | 王维维 | The adjustable waveguides system that a kind of pair of X-ray nanoscale focuses |
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Application publication date: 20140312 |