CN105044839A - Preparing method for micro-electro-mechanical nitride adjustable optical waveguide device - Google Patents
Preparing method for micro-electro-mechanical nitride adjustable optical waveguide device Download PDFInfo
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- CN105044839A CN105044839A CN201510357762.1A CN201510357762A CN105044839A CN 105044839 A CN105044839 A CN 105044839A CN 201510357762 A CN201510357762 A CN 201510357762A CN 105044839 A CN105044839 A CN 105044839A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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Abstract
The invention provides a preparing method for a micro-electro-mechanical nitride adjustable optical waveguide device. The method is performed by a carrier of a high resistant silicon substrate nitride wafer. The wafer comprises a top nitride device layer and a silicon substrate layer. The upper face of the top nitride device layer is provided with an optical waveguide device and a micro-nano driving device structure. Combined with the aligning and deep silicon etching technology done at the back of the top nitride device layer, the method removes the silicone substrate layer under the nitride optical waveguide device and the micro-nano driving device structure to get a suspended nitride optical waveguide device. The method adopts a silicon etching technology at the back to get a separate nitride optical waveguide device and a micro-nano driving device. This method is capable of peeling away a high refraction rate silicon substrate layer and a nitride device layer and utilizes the refraction rate difference between the nitride device layer and air to restrict an optical field by a nitride optical waveguide device. The distance between two neighboring waveguide devices can also be regulated through a micro-electro-mechanical driving device. Due to the change in coupling distance, the optical performance of optical waveguide devices is regulated.
Description
Technical field
The present invention relates to the preparation method of micro electronmechanical adjustable nitride fiber waveguide device, belong to information material and device arts.
Background technology
Nitride material, particularly gallium nitride material, have excellent optical property near infrared and visible light wave range, application prospect is extensive.The nitride material of growth on HR-Si substrate, utilizes dark silicon etching technology, can solve the stripping problem of silicon substrate and nitride material, obtain unsettled nitride film; Utilize the high index of refraction difference of nitride material and air, stronger light field constraint can be realized, for the nitride fiber waveguide device of development near infrared and visible light wave range provides possibility.
The refractive index of silicon substrate is greater than the refractive index of nitride material, limits the development of silicon substrate nitride fiber waveguide device; In addition, because the thickness of silicon substrate nitride device layers is determined by growth conditions usually, thickness degree of freedom is less, for design nitride fiber waveguide device brings difficulty.
Utilize unsettled nitride film thinning technique behind, realize the separation between nitride fiber waveguide device and micro-nano driving element, for device regulation and control provide spatial degrees of freedom; Utilize HR-Si substrate can realize the insulation isolation of nitride device, play the electrostatic attraction between nitride device structure, in conjunction with the mechanical property that nitride material is excellent, development nitride micro-nano driving element; By electrostatic attraction, micro-nano driver produces physical displacement, utilizes spring structure, changes the coupling distance between adjacent nitride fiber waveguide device, realizes the regulation and control to nitride fiber waveguide device optical property.
Summary of the invention
The object of the invention achieves silicon substrate and peels off mutually with nitride device layers, utilizes the difference of nitride film and air refraction, develops unsettled nitride fiber waveguide device; Utilize the optical property of nitride material, nitride fiber waveguide device can be operated in visible ray and infrared band.
The invention provides a kind of its preparation process of micro electronmechanical adjustable nitride fiber waveguide device, it comprises the steps:
Step 1: it is thinning that first described silicon substrate nitride wafers carries out behind polishing, to utilize dark silicon etching technology behind, removes layer-of-substrate silicon;
Step 2: at top layer nitride device layers spin coating one deck electron beam resist of described silicon substrate nitride wafers;
Step 3: utilize electron beam exposure or photoetching technique to define fiber waveguide device and micro-nano driving element structure.Wherein, micro-nano driving element structure comprises fixed fingers, removable comb, spring structure and clamping waveguiding structure;
Step 4: adopt ion beam bombardment or reactive ion beam etching technique that the fiber waveguide device in step 2 and micro-nano driving element structure are transferred to top layer nitride device layers, etching depth depends on required thickness of detector;
Step 5: utilize oxygen plasma ashing method to remove remaining glue-line;
Step 6: adopt photoetching technique, definition device isolation channel, and adopt reactive ion beam etching technique etch nitride device layers to silicon substrate;
Step 7: device layer Coating glue protect, in conjunction with aiming at behind and dark silicon etching technology, removing the layer-of-substrate silicon below fiber waveguide device and micro-nano driving element structure, realizing unsettled nitride film;
Step 8: adopt nitride thining method behind, utilize ion beam bombardment or reactive ion beam etching technique, behind thinning nitride, obtain the fiber waveguide device and micro-nano driving element structure that are separated;
Step 9: utilize oxygen plasma ashing method to remove remaining glue-line, realize micro electronmechanical adjustable nitride fiber waveguide device.
Process provided by the invention adopts electron beam exposure or photoetching technique to define fiber waveguide device and micro-nano driving element structure; Micro-nano driving element structure comprises fixed fingers, removable comb, spring structure and clamping waveguiding structure; And adopting ion beam bombardment or reactive ion beam etching (RIBE) method, device architecture is transferred to nitride device layers, and etching depth depends on the thickness of concrete device layout requirement; Corresponding film forming and lithographic technique can be adopted, define and realize fiber waveguide device and micro-nano driving element, then adopt ion beam bombardment or reactive ion beam etching (RIBE) method, obtain nitride fiber waveguide device and the micro-nano driving element of desired thickness; In conjunction with lithography alignment technology, definition isolation channel, and adopt reactive ion beam technology etch nitride device layers to silicon substrate, realize device isolation groove; In conjunction with aiming at behind and dark silicon etching technology, removing nitride fiber waveguide device and micro-nano driving element underlying silicon substrate layer, obtaining unsettled nitride fiber waveguide device and micro-nano driving element; Adopt nitride thinning lithographic technique behind, obtain the nitride fiber waveguide device and micro-nano driving element that are separated; Change the coupling distance between adjacent waveguide device by micro electronmechanical driver, realize the regulation and control to fiber waveguide device optical property; Utilize thinning technique behind, realize being separated of nitride fiber waveguide device and micro-nano driving element, obtain unsettled nitride micro-nano electrostatic actuator and fiber waveguide device; And integrated by micro electromechanical structure and fiber waveguide device, realize the controlled of fiber waveguide device coupling distance, thus change the optical property of fiber waveguide device.
The carrier that realizes of the present invention is HR-Si substrate nitride wafers, and this wafer is made up of top layer nitride device layers and layer-of-substrate silicon; Realize the stripping of high index of refraction layer-of-substrate silicon and nitride device layers, utilize the refractive index difference of nitride device layers and air, realize unsettled nitride fiber waveguide device; Distance between adjacent waveguide device can be regulated and controled by micro electronmechanical driver, due to the change of coupling distance, thus realizes the regulation and control to fiber waveguide device optical property.Wherein, nitride micro-nano driving element comprises fixed fingers, removable comb, spring structure and clamping waveguiding structure.By on-load voltage on electrode, removable comb will move to fixed fingers direction under the effect supported, and pulls semi-girder to move up.In fiber waveguide device, by optical fiber by above optical signal to grating, enter optical waveguide.Like this under the pulling of semi-girder, optical waveguide is near annulus, and light signal changes.So by changing the coupling distance of nitride fiber waveguide device, thus the optical property of fiber waveguide device can be changed.
The present invention also provides a kind of micro electronmechanical adjustable nitride fiber waveguide device, its structure is by electrode, supporting construction, removable comb, fixed fingers, semi-girder, removable waveguide, annulus, grating, oval supporting construction composition, Electrode connection fixed fingers, fixed fingers and removable comb cross arrangement, removable comb is connected with supporting construction, semi-girder is connected with the supporting construction other end, the other end of semi-girder is connected with oval supporting construction, the oval other two ends of supporting construction are connected with removable waveguide, the other end of removable waveguide is mutually close with the grating on both sides, annulus is mutually close with removable waveguide.This device can also comprise driver, waveguide-coupled.Its device material is made up of high index of refraction layer-of-substrate silicon and nitride device layers; Driver is made up of electrode, fixed fingers, removable comb, supporting construction, spring; Fixed fingers and removable comb are all rectangular configuration; The waveguide two ends of this device have coupling grating, and grating is linear structure.
Usefulness of the present invention is:
1. the present invention defines fiber waveguide device and micro-nano driving element structure, carved by mask layer lithographic technique and wear mask layer to nitride device layers, then adopt ion beam bombardment or reactive ion beam etching (RIBE) method, obtain nitride fiber waveguide device and micro-nano driving element structure.
2. the present invention is in conjunction with micro electronmechanical adjustable nitride device and fiber waveguide device, realizes micro electronmechanical adjustable nitride fiber waveguide device, is regulated by micro electro mechanical device to fiber waveguide device, realize the regulation and control to optical property.
3. the present invention combines thinning technique behind, utilizes the difference of different materials physical characteristics, realizes being separated of micro electronmechanical driver and fiber waveguide device.
Accompanying drawing explanation
Fig. 1 is the structural representation of micro electronmechanical adjustable nitride fiber waveguide device.
Description of reference numerals: 1-electrode; 2-supporting construction; The removable comb of 3-; 4-fixed fingers; 5-semi-girder; The removable waveguide of 6-; 7-annulus; 8-grating; The oval supporting construction of 9-.
Fig. 2 is the process chart of micro electronmechanical adjustable nitride fiber waveguide device preparation method.
Embodiment
Below in conjunction with Figure of description, the invention is described in further detail.
Embodiment one
As shown in Figure 1, the invention provides a kind of micro electronmechanical adjustable nitride fiber waveguide device, its structure is by electrode 1, supporting construction 2, removable comb 3, fixed fingers 4, semi-girder 5, removable waveguide 6, annulus 7, grating 8, oval supporting construction 9 forms, electrode 1 is connected to fixed fingers 4, removable comb 3 is connected with supporting construction 2, semi-girder 5 is connected with supporting construction 2 other end, the other end of semi-girder 5 is connected with oval supporting construction 9, the oval other two ends of supporting construction are connected with removable waveguide 6, the other end of removable waveguide 6 is mutually close with the grating 8 on both sides, annulus 7 is mutually close with removable waveguide 6.The carrier that realizes of the present invention is HR-Si substrate nitride wafers, and this wafer is made up of top layer nitride device layers and layer-of-substrate silicon; Realize the stripping of high index of refraction layer-of-substrate silicon and nitride device layers, utilize the refractive index difference of nitride device layers and air, realize unsettled nitride fiber waveguide device; Distance between adjacent waveguide device can be regulated and controled by micro electronmechanical driver, due to the change of coupling distance, thus realizes the regulation and control to fiber waveguide device optical property.Wherein, nitride micro-nano driving element comprises fixed fingers, removable comb, spring structure and clamping waveguiding structure.
The object of the invention achieves silicon substrate and peels off mutually with nitride device layers, utilizes the difference of nitride film and air refraction, develops unsettled nitride fiber waveguide device; Utilize the optical property of nitride material, nitride fiber waveguide device can be operated in visible ray and infrared band.
Micro electronmechanical adjustable nitride fiber waveguide device of the present invention, by on-load voltage on electrode, removable comb will move to fixed fingers direction under the effect supported, and pulls semi-girder to move up.In fiber waveguide device, by optical fiber by above optical signal to grating, enter optical waveguide.Like this under the pulling of semi-girder, optical waveguide is near annulus, and light signal changes.So by changing the coupling distance of nitride fiber waveguide device, thus the optical property of fiber waveguide device can be changed.Realize the regulation and control to the optical property of fiber waveguide device.
Process provided by the invention adopts electron beam exposure or photoetching technique to define fiber waveguide device and micro-nano driving element structure; Micro-nano driving element structure comprises fixed fingers, removable comb, spring structure and clamping waveguiding structure; And adopting ion beam bombardment or reactive ion beam etching (RIBE) method, device architecture is transferred to nitride device layers, and etching depth depends on the thickness of concrete device layout requirement; Can in conjunction with nitride mask lithographic technique, adopt silicon dioxide or hafnia film, as etching mask layer, corresponding film forming and lithographic technique can be adopted, define and realize fiber waveguide device and micro-nano driving element, then adopt ion beam bombardment or reactive ion beam etching (RIBE) method, obtain nitride fiber waveguide device and the micro-nano driving element of desired thickness; In conjunction with lithography alignment technology, definition isolation channel, and adopt reactive ion beam technology etch nitride device layers to silicon substrate, realize device isolation groove; In conjunction with aiming at behind and dark silicon etching technology, removing nitride fiber waveguide device and micro-nano driving element underlying silicon substrate layer, obtaining unsettled nitride fiber waveguide device and micro-nano driving element; Adopt nitride thinning lithographic technique behind, obtain the nitride fiber waveguide device and micro-nano driving element that are separated; Change the coupling distance between adjacent waveguide device by micro electronmechanical driver, realize the regulation and control to fiber waveguide device optical property; Utilize thinning technique behind, realize being separated of nitride fiber waveguide device and micro-nano driving element, obtain unsettled nitride micro-nano electrostatic actuator and fiber waveguide device; And integrated by micro electromechanical structure and fiber waveguide device, realize the controlled of fiber waveguide device coupling distance, thus change the optical property of fiber waveguide device.
Embodiment two
As shown in Figure 2, present invention also offers a kind of its preparation process of micro electronmechanical adjustable nitride fiber waveguide device, it comprises the steps:
Step 1: it is thinning that first described silicon substrate nitride wafers carries out behind polishing, to utilize dark silicon etching technology behind, removes layer-of-substrate silicon;
Step 2: at top layer nitride device layers spin coating one deck electron beam resist of described silicon substrate nitride wafers;
Step 3: utilize electron beam exposure or photoetching technique to define fiber waveguide device and micro-nano driving element structure, micro-nano driving element structure comprises fixed fingers, removable comb, spring structure and clamping waveguiding structure;
Step 4: adopt ion beam bombardment or reactive ion beam etching technique that the fiber waveguide device in step 2 and micro-nano driving element structure are transferred to top layer nitride device layers, etching depth depends on required thickness of detector;
Step 5: utilize oxygen plasma ashing method to remove remaining glue-line;
Step 6: adopt photoetching technique, definition device isolation channel, and adopt reactive ion beam etching technique etch nitride device layers to silicon substrate;
Step 7: device layer Coating glue protect, in conjunction with aiming at behind and dark silicon etching technology, removing the layer-of-substrate silicon below fiber waveguide device and micro-nano driving element structure, realizing unsettled nitride film;
Step 8: adopt nitride thining method behind, utilize ion beam bombardment or reactive ion beam etching technique, behind thinning nitride, obtain the fiber waveguide device and micro-nano driving element structure that are separated;
Step 9: utilize oxygen plasma ashing method to remove remaining glue-line, realize micro electronmechanical adjustable nitride fiber waveguide device.
Claims (1)
1. a preparation method for micro electronmechanical adjustable nitride fiber waveguide device, is characterized in that, described method comprises the steps:
Step 1: it is thinning that first described silicon substrate nitride wafers carries out behind polishing, to utilize dark silicon etching technology behind, removes layer-of-substrate silicon;
Step 2: at top layer nitride device layers spin coating one deck electron beam resist of described silicon substrate nitride wafers;
Step 3: utilize electron beam exposure or photoetching technique to define fiber waveguide device and micro-nano driving element structure, micro-nano driving element structure comprises fixed fingers, removable comb, spring structure and clamping waveguiding structure;
Step 4: adopt ion beam bombardment or reactive ion beam etching technique that the fiber waveguide device in step 2 and micro-nano driving element structure are transferred to top layer nitride device layers, etching depth depends on required thickness of detector;
Step 5: utilize oxygen plasma ashing method to remove remaining glue-line;
Step 6: adopt photoetching technique, definition device isolation channel, and adopt reactive ion beam etching technique etch nitride device layers to silicon substrate;
Step 7: device layer Coating glue protect, in conjunction with aiming at behind and dark silicon etching technology, removing the layer-of-substrate silicon below fiber waveguide device and micro-nano driving element structure, realizing unsettled nitride film;
Step 8: adopt nitride thining method behind, utilize ion beam bombardment or reactive ion beam etching technique, behind thinning nitride, obtain the fiber waveguide device and micro-nano driving element structure that are separated;
Step 9: utilize oxygen plasma ashing method to remove remaining glue-line, realize micro electronmechanical adjustable nitride fiber waveguide device.
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| CN201310107095.2A CN103630967A (en) | 2013-03-29 | 2013-03-29 | MEMS adjustable nitride optical waveguide device and method for preparing same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110291434A (en) * | 2016-09-12 | 2019-09-27 | 麦斯卓微有限公司 | MEMS actuating system and method |
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| CN109243663B (en) * | 2018-09-16 | 2020-10-02 | 马鞍山金瓦格机械科技有限公司 | Adjustable waveguide system for X-ray nanoscale focusing |
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- 2013-03-29 CN CN201510357762.1A patent/CN105044839A/en active Pending
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| JP2001337242A (en) * | 2000-05-25 | 2001-12-07 | Minolta Co Ltd | Method for manufacturing optical coupling circuit |
| WO2002082140A1 (en) * | 2001-04-04 | 2002-10-17 | Galayor Inc. | Optical microring resonator, optical multiplexer and optical switching apparatus using deformable waveguide segments |
| KR100559645B1 (en) * | 2002-07-02 | 2006-03-10 | 오므론 가부시키가이샤 | Optical Waveguide Device and Manufacturing Method Thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110291434A (en) * | 2016-09-12 | 2019-09-27 | 麦斯卓微有限公司 | MEMS actuating system and method |
| CN110291434B (en) * | 2016-09-12 | 2021-11-05 | 麦斯卓有限公司 | MEMS actuation system and method |
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