CN103560067B - 用于tem的改进相位板 - Google Patents
用于tem的改进相位板 Download PDFInfo
- Publication number
- CN103560067B CN103560067B CN201310194422.2A CN201310194422A CN103560067B CN 103560067 B CN103560067 B CN 103560067B CN 201310194422 A CN201310194422 A CN 201310194422A CN 103560067 B CN103560067 B CN 103560067B
- Authority
- CN
- China
- Prior art keywords
- phase
- film
- plate
- ctf
- phase shift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000006872 improvement Effects 0.000 title claims description 10
- 230000010363 phase shift Effects 0.000 claims abstract description 74
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 51
- 229910052799 carbon Inorganic materials 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/263—Contrast, resolution or power of penetration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/2614—Holography or phase contrast, phase related imaging in general, e.g. phase plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2802—Transmission microscopes
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12168997.0 | 2012-05-23 | ||
| EP20120168997 EP2667399A1 (en) | 2012-05-23 | 2012-05-23 | Improved phase plate for a TEM |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103560067A CN103560067A (zh) | 2014-02-05 |
| CN103560067B true CN103560067B (zh) | 2018-05-15 |
Family
ID=46149231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310194422.2A Active CN103560067B (zh) | 2012-05-23 | 2013-05-23 | 用于tem的改进相位板 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8772716B2 (enExample) |
| EP (1) | EP2667399A1 (enExample) |
| JP (1) | JP6027942B2 (enExample) |
| CN (1) | CN103560067B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2667399A1 (en) * | 2012-05-23 | 2013-11-27 | FEI Company | Improved phase plate for a TEM |
| EP2690648B1 (en) * | 2012-07-26 | 2014-10-15 | Fei Company | Method of preparing and imaging a lamella in a particle-optical apparatus |
| TWI544513B (zh) * | 2012-12-18 | 2016-08-01 | 中央研究院 | 可釋出電荷的晶片式薄膜哲尼克相位板及用其觀察有機材料的方法 |
| JP6286270B2 (ja) | 2013-04-25 | 2018-02-28 | エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ | 透過型電子顕微鏡内で位相版を用いる方法 |
| DE102013019297A1 (de) | 2013-11-19 | 2015-05-21 | Fei Company | Phasenplatte für ein Transmissionselektronenmikroskop |
| EP2881970A1 (en) * | 2013-12-04 | 2015-06-10 | Fei Company | Method of producing a freestanding thin film of nano-crystalline carbon |
| CN106104744B (zh) * | 2014-01-21 | 2019-04-16 | 拉莫特特拉维夫大学有限公司 | 用于调节粒子波束的方法与装置 |
| JP2016110767A (ja) * | 2014-12-04 | 2016-06-20 | 日本電子株式会社 | 荷電粒子ビーム装置および画像取得方法 |
| JP2016170951A (ja) * | 2015-03-12 | 2016-09-23 | 日本電子株式会社 | 位相板およびその製造方法、ならびに電子顕微鏡 |
| US10109453B2 (en) * | 2015-03-18 | 2018-10-23 | Battelle Memorial Institute | Electron beam masks for compressive sensors |
| US10170274B2 (en) | 2015-03-18 | 2019-01-01 | Battelle Memorial Institute | TEM phase contrast imaging with image plane phase grating |
| US10580614B2 (en) | 2016-04-29 | 2020-03-03 | Battelle Memorial Institute | Compressive scanning spectroscopy |
| CN108885963B (zh) * | 2016-08-22 | 2020-02-18 | 株式会社日立高新技术 | 电子显微镜以及观察方法 |
| US10295677B2 (en) | 2017-05-08 | 2019-05-21 | Battelle Memorial Institute | Systems and methods for data storage and retrieval |
| JP7051591B2 (ja) * | 2018-06-05 | 2022-04-11 | 株式会社日立製作所 | 透過電子顕微鏡 |
| WO2020243268A1 (en) | 2019-05-28 | 2020-12-03 | The Board Of Trustees Of The Leland Stanford Junior University | Optically-addressed phase modulator for electron beams |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3773389B2 (ja) * | 2000-03-27 | 2006-05-10 | 日本電子株式会社 | 位相差電子顕微鏡用薄膜位相板並びに位相差電子顕微鏡及び位相板帯電防止法 |
| JP4328044B2 (ja) * | 2001-09-25 | 2009-09-09 | 日本電子株式会社 | 差分コントラスト電子顕微鏡および電子顕微鏡像のデータ処理方法 |
| DE10200645A1 (de) * | 2002-01-10 | 2003-07-24 | Leo Elektronenmikroskopie Gmbh | Elektronenmikroskop mit ringförmiger Beleuchtungsapertur |
| US7737412B2 (en) * | 2004-07-12 | 2010-06-15 | The Regents Of The University Of California | Electron microscope phase enhancement |
| JP4625317B2 (ja) * | 2004-12-03 | 2011-02-02 | ナガヤマ アイピー ホールディングス リミテッド ライアビリティ カンパニー | 位相差電子顕微鏡用位相板及びその製造方法並びに位相差電子顕微鏡 |
| DE102005040267B4 (de) * | 2005-08-24 | 2007-12-27 | Universität Karlsruhe | Verfahren zum Herstellen einer mehrschichtigen elektrostatischen Linsenanordnung, insbesondere einer Phasenplatte und derartige Phasenplatte |
| EP2091062A1 (en) | 2008-02-13 | 2009-08-19 | FEI Company | TEM with aberration corrector and phase plate |
| EP2131385A1 (en) * | 2008-06-05 | 2009-12-09 | FEI Company | Hybrid phase plate |
| US7977633B2 (en) | 2008-08-27 | 2011-07-12 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. | Phase plate, in particular for an electron microscope |
| JP4896106B2 (ja) * | 2008-09-30 | 2012-03-14 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡 |
| EP2400522A1 (en) | 2010-06-24 | 2011-12-28 | Fei Company | Blocking member for use in the diffraction plane of a TEM |
| EP2593958B1 (en) | 2010-07-14 | 2019-02-20 | FEI Company | Improved contrast for scanning confocal electron microscope |
| EP2485239A1 (en) * | 2011-02-07 | 2012-08-08 | FEI Company | Method for centering an optical element in a TEM comprising a contrast enhancing element |
| EP2667399A1 (en) * | 2012-05-23 | 2013-11-27 | FEI Company | Improved phase plate for a TEM |
| EP2704178B1 (en) | 2012-08-30 | 2014-08-20 | Fei Company | Imaging a sample in a TEM equipped with a phase plate |
-
2012
- 2012-05-23 EP EP20120168997 patent/EP2667399A1/en not_active Withdrawn
-
2013
- 2013-05-15 JP JP2013102688A patent/JP6027942B2/ja active Active
- 2013-05-16 US US13/896,103 patent/US8772716B2/en active Active
- 2013-05-23 CN CN201310194422.2A patent/CN103560067B/zh active Active
-
2014
- 2014-05-07 US US14/271,828 patent/US9006652B2/en active Active
Non-Patent Citations (1)
| Title |
|---|
| Phase plates for electron microscopes;Mueller K;《OPTIK》;19760131;第45卷(第1期);摘要、第74页第4段-第83页第1段，附图1-6 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103560067A (zh) | 2014-02-05 |
| EP2667399A1 (en) | 2013-11-27 |
| US20130313428A1 (en) | 2013-11-28 |
| JP6027942B2 (ja) | 2016-11-16 |
| US9006652B2 (en) | 2015-04-14 |
| JP2013247113A (ja) | 2013-12-09 |
| US8772716B2 (en) | 2014-07-08 |
| US20140326878A1 (en) | 2014-11-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |