CN103528676A - Light distribution test method of semiconductor laser and device of test method - Google Patents
Light distribution test method of semiconductor laser and device of test method Download PDFInfo
- Publication number
- CN103528676A CN103528676A CN201310508297.8A CN201310508297A CN103528676A CN 103528676 A CN103528676 A CN 103528676A CN 201310508297 A CN201310508297 A CN 201310508297A CN 103528676 A CN103528676 A CN 103528676A
- Authority
- CN
- China
- Prior art keywords
- scanning
- semiconductor laser
- sampler
- laser
- datum line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a light distribution test method of a semiconductor laser, which comprises the steps of positioning the semiconductor laser, allowing a laser intensity measuring instrument to detect received laser intensity via a sampling device, taking a geometric center of a luminous surface of the laser as an original point, setting a normal direction passing through the original point and perpendicular to the luminous surface of the laser as a z axis, and a straight line passing through the original point in a plane perpendicular to the z axis as a scanning reference line, and allowing scanning breadth of the sampling device to be perpendicular to the scanning reference line. The test method can accurately test far field light distribution of the semiconductor laser, and obtain information such as a spot size and a far field divergence angle of the semiconductor laser through the light distribution.
Description
Technical field
The present invention relates to a kind of semiconductor laser light intensity distribution testing method and device thereof.
Background technology
The asymmetry of far-field distribution is the exclusive feature of semiconductor laser, there is the larger fast axle angle of divergence and the less slow axis angle of divergence, the far-field spot that causes semiconductor laser is oval hot spot, seriously restricted the application of semiconductor laser in coupling fiber, optical system are integrated, the far-field intensity distribution that therefore accurately test characterizes semiconductor laser has great importance.
Summary of the invention
The invention provides a kind of semiconductor laser light intensity distribution testing method and device thereof, the accurate far-field intensity distribution of measuring semiconductor laser instrument, can obtain the spot size of semiconductor laser, the information such as far-field divergence angle by light distribution.
Technical scheme of the present invention is as follows:
Semiconductor laser light intensity distribution testing method, is by semiconductor laser location, is surveyed the laser intensity receiving through sampler by laser intensity measuring instrument; The laser instrument light-emitting area geometric center of take is initial point, and establishing initial point is z axle perpendicular to the normal direction of laser instrument light-emitting area, and the straight line of crossing initial point in the plane perpendicular to z axle is scanning datum line, and the scanning breadth of sampler is perpendicular to scanning datum line;
Wherein, comprise following link:
Sampler is in current scanning breadth, with respect to semiconductor laser, take scanning datum line as axle, according to the sweep radius of setting and step-length rotation, real time record sampler is with respect to the angle θ of scanning center and corresponding light intensity I, and records initial point to the vertical range of this scanning breadth; Complete the information recording in current scanning breadth;
With respect to semiconductor laser, sampler, along the axial stepping of scanning datum line, scans and record again according to aforesaid operations;
Finally complete on scanning datum line and all scan and record, draw out light intensity curved surface.The form of light intensity curved surface can adopt I-θ-y curved surface, and y is illustrated on scanning datum line scanning center to the distance of initial point.
For multi-illuminating unit semiconductor laser, for guaranteeing measuring position, locate each luminescence unit and should have contribution to light intensity, can set sweep radius and at least be greater than 50 times of direction of scanning laser optical spot size, sampler glazed area is less than 1/50 of tested semiconductor laser spot size.
A kind of in order to realize the device of above-mentioned semiconductor laser light intensity distribution testing method, comprise semiconductor laser, rotation translation stage and be arranged at the sampler on rotation translation stage, the light inlet of sampler is towards the exiting surface of semiconductor laser, and the light-emitting window of sampler is connected to laser intensity measuring instrument; Described rotation translation stage can move axially along described scanning datum line, can also take described scanning datum line as axle rotation.
Sampler can be photodetector or integrating sphere, by optical patchcord, is connected to laser intensity measuring instrument.
The present invention has the following advantages:
The present invention can be accurately, the far-field intensity distribution of measuring semiconductor laser instrument all sidedly, and method of testing is simple, and testing efficiency is high, can carry out light distribution test to the semiconductor laser of different duty, multi-illuminating unit.
By the distribution of light intensity, can measure accurately the information such as the fast and slow axis angle of divergence, spot size of semiconductor laser.
The present invention can be directly used in the test of extensive bulk article, has measuring speed fast, measuring accuracy advantages of higher.
Accompanying drawing explanation
Fig. 1 is proving installation theory diagram of the present invention.Sampler in figure and laser intensity measuring instrument can integrate, and also can connect with optical patchcord.During test light distribution, can rotate semiconductor laser, or rotation sampler and laser intensity measuring instrument, therefore rotating translation stage can act on semiconductor laser, or acts on sampler and laser intensity measuring instrument.
In figure: 1-semiconductor laser; 2-driving power; 3-rotation translation stage; 4-sampler; 5-laser intensity measuring instrument; 6-scanning datum line; 7-sampler.
Fig. 2 is light distribution proving installation schematic diagram of the present invention.
Fig. 3 is the light distribution schematic diagram of one embodiment of the invention.
Embodiment
It is initial point that proving installation of the present invention be take laser instrument light-emitting area geometric center, if crossing initial point is z axle perpendicular to the normal direction of laser instrument light-emitting area, the straight line of crossing initial point in the plane perpendicular to z axle is scanning datum line, and the scanning breadth of sampler is perpendicular to scanning datum line; Along scanning datum line, change scanning stepping, by sweep radius and the step-length set, rotation sampler or rotation measured laser device, record each scanning plane on scanning datum line apart from the distance of initial point and sampler angle θ and the respective light intensities I with respect to scanning center, draw out light intensity curved surface (I-θ-y curved surface), be the light distribution of semiconductor laser.
Concrete test process can carry out according to following steps:
A) according to Fig. 1, set up proving installation, first laser level is fixed;
B) take light-emitting area geometric center as initial point, the normal direction of setting perpendicular to light-emitting area is z axle, sets up cartesian coordinate system (three-dimensional system of coordinate), sees Fig. 2;
C) straight line of crossing initial point in the plane perpendicular to z axle is for scanning datum line, the scanning breadth of sampler is perpendicular to scanning datum line, by the sweep radius of setting, rotation sampler or rotation measured laser device, on scanning datum line, certain some place scanning breadth scans (each scanning take scanning datum line carry out two-dimensional scan as axle rotates);
D) complete after the scanning of a scanning breadth, along scanning datum line, to set step-length stepping, complete successively all scanning on scanning datum line;
For guaranteeing measuring position, locate each luminescence unit and should have contribution to light intensity, semiconductor laser for a plurality of luminous points, sweep radius is at least greater than 50 times of direction of scanning laser optical spot size, and sampler glazed area should be less than 1/50 of tested semiconductor laser spot size;
E) record each scanning plane distance apart from initial point on scanning datum line;
F) record sampler with respect to angle θ and the respective light intensities I of scanning center, draw out light intensity curved surface (I-θ-y curved surface), see Fig. 3, y direction indication moves the light intensity of the diverse location of certain step-length record along scanning datum line, θ is illustrated in the angle of sampler scanning in scanning plane, and I is illustrated in the light intensity at diverse location place in scanning plane.
Claims (4)
1. semiconductor laser light intensity distribution testing method, is by semiconductor laser location, is surveyed the laser intensity receiving through sampler by laser intensity measuring instrument; The laser instrument light-emitting area geometric center of take is initial point, and establishing initial point is z axle perpendicular to the normal direction of laser instrument light-emitting area, and the straight line of crossing initial point in the plane perpendicular to z axle is scanning datum line, and the scanning breadth of sampler is perpendicular to scanning datum line;
Wherein, comprise following link:
Sampler is in current scanning breadth, with respect to semiconductor laser, take scanning datum line as axle, according to the sweep radius of setting and step-length rotation, real time record sampler is with respect to the angle θ of scanning center and corresponding light intensity I, and records initial point to the vertical range of this scanning breadth; Complete the information recording in current scanning breadth;
With respect to semiconductor laser, sampler, along the axial stepping of scanning datum line, scans and record again according to aforesaid operations;
Finally complete on scanning datum line and all scan and record, draw out light intensity curved surface.
2. semiconductor laser light intensity distribution testing method according to claim 1, it is characterized in that: setting sweep radius is at least greater than 50 times of direction of scanning laser optical spot size, and sampler glazed area is less than 1/50 of tested semiconductor laser spot size.
3. one kind in order to realize the proving installation of semiconductor laser light intensity distribution testing method described in claim 1, comprise semiconductor laser, rotation translation stage and be arranged at the sampler on rotation translation stage, the light inlet of sampler is towards the exiting surface of semiconductor laser, and the light-emitting window of sampler is connected to laser intensity measuring instrument; Described rotation translation stage can move axially along described scanning datum line, can also take described scanning datum line as axle rotation.
4. proving installation according to claim 3, is characterized in that: sampler adopts photodetector or integrating sphere, by optical patchcord, is connected to laser intensity measuring instrument.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310508297.8A CN103528676B (en) | 2013-10-24 | 2013-10-24 | A kind of semiconductor laser light intensity distribution testing method and device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310508297.8A CN103528676B (en) | 2013-10-24 | 2013-10-24 | A kind of semiconductor laser light intensity distribution testing method and device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103528676A true CN103528676A (en) | 2014-01-22 |
| CN103528676B CN103528676B (en) | 2015-07-29 |
Family
ID=49930871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310508297.8A Active CN103528676B (en) | 2013-10-24 | 2013-10-24 | A kind of semiconductor laser light intensity distribution testing method and device thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103528676B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105466669A (en) * | 2015-12-31 | 2016-04-06 | 深圳市亚派光电器件有限公司 | Detection device for detecting performance of laser diode |
| CN105510004A (en) * | 2015-12-31 | 2016-04-20 | 深圳市亚派光电器件有限公司 | Method for detecting performance of laser diode |
| CN109668516A (en) * | 2018-12-29 | 2019-04-23 | 中国电子科技集团公司第四十研究所 | A kind of optical fiber far-field scanning instrument based on worm and gear |
| WO2020114001A1 (en) * | 2018-12-07 | 2020-06-11 | 南昌欧菲生物识别技术有限公司 | Detection system and detection method for detecting light power of light emitting module |
| CN111795806A (en) * | 2020-06-30 | 2020-10-20 | 雄芯光电科技有限责任公司 | Laser divergence angle measuring system and measuring method |
| CN111981988A (en) * | 2020-09-16 | 2020-11-24 | 广州天域科技有限公司 | Handheld laser scanner |
| CN112945521A (en) * | 2021-01-27 | 2021-06-11 | 广东天讯达资讯科技股份有限公司 | Laser device divergence angle testing device based on camera two-point testing method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19528198A1 (en) * | 1995-08-01 | 1997-02-06 | Blz Gmbh | Laser beam intensity distribution method for materials processing - uses parallel sensor strips across cross section of beam and takes advantage of predetermined symmetry properties of intensity distribution |
| JP2002094163A (en) * | 2000-09-14 | 2002-03-29 | Ricoh Co Ltd | Emitted-light intensity distribution measuring device |
| CN101067572A (en) * | 2005-12-23 | 2007-11-07 | 上海无线电设备研究所 | Laser far field light intensity distribution state testing device |
| CN101929889A (en) * | 2010-05-17 | 2010-12-29 | 西安炬光科技有限公司 | Semiconductor laser remote field testing method and device |
| CN102109571A (en) * | 2010-12-16 | 2011-06-29 | 西安炬光科技有限公司 | Characteristic testing system of semiconductor laser |
| CN203629679U (en) * | 2013-10-24 | 2014-06-04 | 西安炬光科技有限公司 | Semiconductor laser light intensity distribution test device |
-
2013
- 2013-10-24 CN CN201310508297.8A patent/CN103528676B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19528198A1 (en) * | 1995-08-01 | 1997-02-06 | Blz Gmbh | Laser beam intensity distribution method for materials processing - uses parallel sensor strips across cross section of beam and takes advantage of predetermined symmetry properties of intensity distribution |
| JP2002094163A (en) * | 2000-09-14 | 2002-03-29 | Ricoh Co Ltd | Emitted-light intensity distribution measuring device |
| CN101067572A (en) * | 2005-12-23 | 2007-11-07 | 上海无线电设备研究所 | Laser far field light intensity distribution state testing device |
| CN101929889A (en) * | 2010-05-17 | 2010-12-29 | 西安炬光科技有限公司 | Semiconductor laser remote field testing method and device |
| CN102109571A (en) * | 2010-12-16 | 2011-06-29 | 西安炬光科技有限公司 | Characteristic testing system of semiconductor laser |
| CN203629679U (en) * | 2013-10-24 | 2014-06-04 | 西安炬光科技有限公司 | Semiconductor laser light intensity distribution test device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105466669A (en) * | 2015-12-31 | 2016-04-06 | 深圳市亚派光电器件有限公司 | Detection device for detecting performance of laser diode |
| CN105510004A (en) * | 2015-12-31 | 2016-04-20 | 深圳市亚派光电器件有限公司 | Method for detecting performance of laser diode |
| CN105510004B (en) * | 2015-12-31 | 2018-03-06 | 深圳市亚派光电器件有限公司 | For detecting the detection method of laser diode performance |
| CN105466669B (en) * | 2015-12-31 | 2018-04-03 | 深圳市亚派光电器件有限公司 | For detecting the detection device of laser diode performance |
| WO2020114001A1 (en) * | 2018-12-07 | 2020-06-11 | 南昌欧菲生物识别技术有限公司 | Detection system and detection method for detecting light power of light emitting module |
| CN109668516A (en) * | 2018-12-29 | 2019-04-23 | 中国电子科技集团公司第四十研究所 | A kind of optical fiber far-field scanning instrument based on worm and gear |
| CN111795806A (en) * | 2020-06-30 | 2020-10-20 | 雄芯光电科技有限责任公司 | Laser divergence angle measuring system and measuring method |
| CN111981988A (en) * | 2020-09-16 | 2020-11-24 | 广州天域科技有限公司 | Handheld laser scanner |
| CN111981988B (en) * | 2020-09-16 | 2021-11-30 | 广州天域科技有限公司 | Handheld laser scanner |
| CN112945521A (en) * | 2021-01-27 | 2021-06-11 | 广东天讯达资讯科技股份有限公司 | Laser device divergence angle testing device based on camera two-point testing method |
| CN112945521B (en) * | 2021-01-27 | 2023-06-20 | 广东天讯达资讯科技股份有限公司 | Laser divergence angle testing device based on camera two-point testing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103528676B (en) | 2015-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103528676B (en) | A kind of semiconductor laser light intensity distribution testing method and device thereof | |
| CN206594292U (en) | A kind of laser radar range precision automatic checkout system | |
| CN103376068B (en) | The acquisition methods of laser three-D pattern proving installation and object plane three-dimensional information thereof | |
| CN102944188B (en) | A kind of spot scan three dimensional shape measurement system scaling method | |
| CN103017690A (en) | Method for measuring straightness of super-long guide rail | |
| CN102589455B (en) | Standing wood diameter detection device based on laser and visual technology | |
| CN204313798U (en) | A kind of laser beam in-situ calibration device | |
| CN107121095A (en) | A kind of method and device of accurate measurement super-large curvature radius | |
| CN103852035B (en) | Hollow thread thin bar linearity or the measuring mechanism of axiality and use this mechanism to realize the measuring method of linearity or axiality | |
| CN102589492B (en) | A kind of large-scale curved flexible detection device | |
| CN103758017A (en) | Detection method and detection system for three-dimensional pavement elevation grid numerical value | |
| CN102735191B (en) | Device for determining verticality of honeycomb ceramics | |
| CN104515595A (en) | Testing device for far field intensity of semiconductor light source | |
| CN101788272A (en) | Method for precisely measuring inner diameter of multi-direction shaft hole based on laser triangulation method | |
| CN105444673A (en) | Device and method for determining center of optical element according to rotating translation absolute detection method | |
| CN104535300A (en) | Large-diameter parallel light pipe wavefront and image surface position calibration device and method | |
| CN103033344B (en) | Optical system focal distance detection method | |
| CN104596639B (en) | Far-field three-dimensional strength representation device for semiconductor light source | |
| CN203053678U (en) | Detection calibration apparatus for multi-optical axis dynamic consistency | |
| CN102095388B (en) | System and method for automatically measuring best matching angle of crystals | |
| CN106767926B (en) | Calibration method of digital calibration system of demarcation device | |
| CN100590382C (en) | Large sized platform deflection amount photoelectric measuring method | |
| CN102841097B (en) | High-accuracy resetting technology-based damage threshold measuring method and device | |
| CN203629679U (en) | Semiconductor laser light intensity distribution test device | |
| CN204359512U (en) | A kind of heavy caliber parallel light tube wavefront and image planes position label means |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 710077 high power semiconductor laser Industrial Park, Shaanxi, Xi'an, Shaanxi Province, No. 86, No. 56 Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710119 high tech Zone, Shaanxi, Xi'an new industrial park information Avenue, building 17, building three, floor 10 Patentee before: Xi'an Focuslight Technology Co., Ltd. |