CN103528676B - A kind of semiconductor laser light intensity distribution testing method and device thereof - Google Patents
A kind of semiconductor laser light intensity distribution testing method and device thereof Download PDFInfo
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- CN103528676B CN103528676B CN201310508297.8A CN201310508297A CN103528676B CN 103528676 B CN103528676 B CN 103528676B CN 201310508297 A CN201310508297 A CN 201310508297A CN 103528676 B CN103528676 B CN 103528676B
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Abstract
The invention provides a kind of semiconductor laser light intensity distribution testing method, be that semiconductor laser is located, detected the laser intensity received through sampler by laser intensity measuring instrument; With laser instrument light-emitting area geometric center for initial point, if crossing initial point perpendicular to the normal direction of laser instrument light-emitting area is z-axis, be scanning datum line perpendicular to the straight line plane of z-axis being crossed initial point, the scanning breadth of sampler is perpendicular to scanning datum line, the present invention can the far-field intensity distribution of accurate measuring semiconductor laser instrument, the spot size of semiconductor laser can be obtained, the information such as far-field divergence angle by light distribution.
Description
Technical field
The present invention relates to a kind of semiconductor laser light intensity distribution testing method and device thereof.
Background technology
The asymmetry of far-field distribution is the exclusive feature of semiconductor laser, there is the larger fast axle angle of divergence and less slow axis divergence, the far-field spot of semiconductor laser is caused to be oval hot spot, seriously constrain the application of semiconductor laser in coupling fiber, optical system are integrated, the far-field intensity distribution that therefore accurately test characterizes semiconductor laser has great importance.
Summary of the invention
The invention provides a kind of semiconductor laser light intensity distribution testing method and device thereof, can the far-field intensity distribution of accurate measuring semiconductor laser instrument, the spot size of semiconductor laser can be obtained by light distribution, the information such as far-field divergence angle.
Technical scheme of the present invention is as follows:
Semiconductor laser light intensity distribution testing method, is located by semiconductor laser, is detected the laser intensity received through sampler by laser intensity measuring instrument; With laser instrument light-emitting area geometric center for initial point, if crossing initial point perpendicular to the normal direction of laser instrument light-emitting area is z-axis, perpendicular to the plane of z-axis being crossed the straight line of initial point for scanning datum line, the scanning breadth of sampler is perpendicular to scanning datum line;
Wherein, following link is comprised:
Sampler is in Current Scan breadth, be axle relative to semiconductor laser to scan datum line, rotate according to the sweep radius of setting and step-length, the angle θ of real time record sampler relative to scanning center and the light intensity I of correspondence, and record the vertical range of initial point to this scanning breadth; Complete the information record in Current Scan breadth;
Relative to semiconductor laser, sampler, along the axial stepping of scanning datum line, carries out scanning and record according to aforesaid operations again;
Finally complete on scanning datum line and all scan and record, draw out light intensity curved surface.The form of light intensity curved surface can adopt I-θ-y curved surface, and y represents that scanning center is to the distance of initial point on scanning datum line.
For multi-illuminating unit semiconductor laser, for ensureing that each luminescence unit in measuring position place should have contribution to light intensity, can set 50 times that sweep radius is at least greater than direction of scanning laser optical spot size, sampler glazed area is less than 1/50 of tested semiconductor laser spot size.
A kind of device in order to realize above-mentioned semiconductor laser light intensity distribution testing method, the sampler comprising semiconductor laser, rotary flat moving stage and be arranged in rotary flat moving stage, the light inlet of sampler is towards the exiting surface of semiconductor laser, and the light-emitting window of sampler is connected to laser intensity measuring instrument; Described rotary flat moving stage can move axially along described scanning datum line, can also with described scanning datum line for axle rotates.
Sampler can be photodetector or integrating sphere, is connected to laser intensity measuring instrument by optical patchcord.
The present invention has the following advantages:
The present invention can accurately, the far-field intensity distribution of measuring semiconductor laser instrument all sidedly, method of testing is simple, and testing efficiency is high, can carry out light distribution test to the semiconductor laser of different duty, multi-illuminating unit.
The information such as the fast and slow axis angle of divergence, spot size of semiconductor laser can be measured accurately by the distribution of light intensity.
The present invention can be directly used in the test of extensive bulk article, has measuring speed fast, measuring accuracy advantages of higher.
Accompanying drawing explanation
Fig. 1 is proving installation theory diagram of the present invention.Sampler in figure and laser intensity measuring instrument can integrate, and also can connect with optical patchcord.Can rotating semiconductor laser instrument during test light distribution, or rotary sampling device and laser intensity measuring instrument, therefore rotary flat moving stage can act on semiconductor laser, or acts on sampler and laser intensity measuring instrument.
In figure: 1-semiconductor laser; 2-driving power; 3-rotary flat moving stage; 4-sampler; 5-laser intensity measuring instrument; 6-scanning datum line; 7-sampler.
Fig. 2 is light distribution proving installation schematic diagram of the present invention.
Fig. 3 is the light distribution schematic diagram of one embodiment of the invention.
Embodiment
Proving installation of the present invention with laser instrument light-emitting area geometric center for initial point, if crossing initial point perpendicular to the normal direction of laser instrument light-emitting area is z-axis, be scanning datum line perpendicular to the straight line plane of z-axis being crossed initial point, the scanning breadth of sampler is perpendicular to scanning datum line; Scanning stepping is changed along scanning datum line, by sweep radius and the step-length of setting, rotary sampling device or rotation measured laser device, record each scanning plane on scanning datum line apart from the Distance geometry sampler of initial point relative to the angle θ of scanning center and respective light intensities I, draw out light intensity curved surface (I-θ-y curved surface), be the light distribution of semiconductor laser.
Concrete test process can carry out according to following steps:
A) set up proving installation according to Fig. 1, first laser level is fixed;
B) with light-emitting area geometric center for initial point, the normal direction set perpendicular to light-emitting area is z-axis, sets up cartesian coordinate system (three-dimensional system of coordinate), sees Fig. 2;
C) be scanning datum line perpendicular to the straight line plane of z-axis being crossed initial point, the scanning breadth of sampler is perpendicular to scanning datum line, by the sweep radius of setting, rotary sampling device or rotate measured laser device, on scanning datum line, certain some place scanning breadth carries out scanning (each scanning to scan datum line carry out two-dimensional scan for axle rotation);
D) after completing the scanning of a scanning breadth, along scanning datum line to set step-length stepping, complete successively on scanning datum line and all scan;
For ensureing that each luminescence unit in measuring position place should have contribution to light intensity, for the semiconductor laser of multiple luminous point, sweep radius is at least greater than 50 times of direction of scanning laser optical spot size, and sampler glazed area should be less than 1/50 of tested semiconductor laser spot size;
E) each scanning plane distance apart from initial point on scanning datum line is recorded;
F) sampler is recorded relative to the angle θ of scanning center and respective light intensities I, draw out light intensity curved surface (I-θ-y curved surface), see Fig. 3, y direction represents the light intensity moving the diverse location of certain step-length record along scanning datum line, θ represents the angle of sampler scanning in scanning plane, and I represents the light intensity at diverse location place in scanning plane.
Claims (4)
1. semiconductor laser light intensity distribution testing method, is located by semiconductor laser, is detected the laser intensity received through sampler by laser intensity measuring instrument; With laser instrument light-emitting area geometric center for initial point, if crossing initial point perpendicular to the normal direction of laser instrument light-emitting area is z-axis, perpendicular to the plane of z-axis being crossed the straight line of initial point for scanning datum line, the scanning breadth of sampler is perpendicular to scanning datum line;
Wherein, following link is comprised:
Sampler is in Current Scan breadth, be axle relative to semiconductor laser to scan datum line, rotate according to the sweep radius of setting and step-length, the angle θ of real time record sampler relative to scanning center and the light intensity I of correspondence, and record the vertical range of initial point to this scanning breadth; Complete the information record in Current Scan breadth;
Relative to semiconductor laser, sampler, along the axial stepping of scanning datum line, carries out scanning and record according to aforesaid operations again;
Finally complete on scanning datum line and all scan and record, draw out light intensity curved surface.
2. semiconductor laser light intensity distribution testing method according to claim 1, it is characterized in that: setting sweep radius is at least greater than 50 times of direction of scanning laser optical spot size, and sampler glazed area is less than 1/50 of tested semiconductor laser spot size.
3. one kind in order to realize the proving installation of semiconductor laser light intensity distribution testing method described in claim 1, the sampler comprising semiconductor laser, rotary flat moving stage and be arranged in rotary flat moving stage, the light inlet of sampler is towards the exiting surface of semiconductor laser, and the light-emitting window of sampler is connected to laser intensity measuring instrument; Described rotary flat moving stage can move axially along described scanning datum line, can also with described scanning datum line for axle rotates.
4. proving installation according to claim 3, is characterized in that: sampler adopts photodetector or integrating sphere, is connected to laser intensity measuring instrument by optical patchcord.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310508297.8A CN103528676B (en) | 2013-10-24 | 2013-10-24 | A kind of semiconductor laser light intensity distribution testing method and device thereof |
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| CN201310508297.8A CN103528676B (en) | 2013-10-24 | 2013-10-24 | A kind of semiconductor laser light intensity distribution testing method and device thereof |
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| CN103528676A CN103528676A (en) | 2014-01-22 |
| CN103528676B true CN103528676B (en) | 2015-07-29 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105510004B (en) * | 2015-12-31 | 2018-03-06 | 深圳市亚派光电器件有限公司 | For detecting the detection method of laser diode performance |
| CN105466669B (en) * | 2015-12-31 | 2018-04-03 | 深圳市亚派光电器件有限公司 | For detecting the detection device of laser diode performance |
| WO2020114001A1 (en) * | 2018-12-07 | 2020-06-11 | 南昌欧菲生物识别技术有限公司 | Detection system and detection method for detecting light power of light emitting module |
| CN109668516A (en) * | 2018-12-29 | 2019-04-23 | 中国电子科技集团公司第四十研究所 | A kind of optical fiber far-field scanning instrument based on worm and gear |
| CN111795806B (en) * | 2020-06-30 | 2022-10-04 | 雄芯光电科技有限责任公司 | Laser divergence angle measuring system and measuring method |
| CN111981988B (en) * | 2020-09-16 | 2021-11-30 | 广州天域科技有限公司 | Handheld laser scanner |
| CN112945521B (en) * | 2021-01-27 | 2023-06-20 | 广东天讯达资讯科技股份有限公司 | Laser divergence angle testing device based on camera two-point testing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19528198A1 (en) * | 1995-08-01 | 1997-02-06 | Blz Gmbh | Laser beam intensity distribution method for materials processing - uses parallel sensor strips across cross section of beam and takes advantage of predetermined symmetry properties of intensity distribution |
| JP2002094163A (en) * | 2000-09-14 | 2002-03-29 | Ricoh Co Ltd | Emitted-light intensity distribution measuring device |
| CN101067572A (en) * | 2005-12-23 | 2007-11-07 | 上海无线电设备研究所 | Laser far field light intensity distribution state testing device |
| CN101929889A (en) * | 2010-05-17 | 2010-12-29 | 西安炬光科技有限公司 | Semiconductor laser remote field testing method and device |
| CN102109571B (en) * | 2010-12-16 | 2013-01-02 | 西安炬光科技有限公司 | Characteristic testing system of semiconductor laser |
| CN203629679U (en) * | 2013-10-24 | 2014-06-04 | 西安炬光科技有限公司 | Semiconductor laser light intensity distribution test device |
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Address after: 710077 high power semiconductor laser Industrial Park, Shaanxi, Xi'an, Shaanxi Province, No. 86, No. 56 Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710119 high tech Zone, Shaanxi, Xi'an new industrial park information Avenue, building 17, building three, floor 10 Patentee before: Xi'an Focuslight Technology Co., Ltd. |