CN104515595A - Testing device for far field intensity of semiconductor light source - Google Patents
Testing device for far field intensity of semiconductor light source Download PDFInfo
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- CN104515595A CN104515595A CN201410808513.5A CN201410808513A CN104515595A CN 104515595 A CN104515595 A CN 104515595A CN 201410808513 A CN201410808513 A CN 201410808513A CN 104515595 A CN104515595 A CN 104515595A
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Abstract
The invention provides a testing device for far field intensity of a semiconductor light source. The testing device is ingenious in structure and can avoid the problem of low system reliability due to interference on a double-arm machine. The device mainly comprises a first rotating shaft and a carrier that are fixed oppositely, as well as a second rotating shaft and a turning arm that are fixed oppositely, wherein the semiconductor light source to be tested is fixed on the carrier; a light emitting axis of the semiconductor light source to be tested is perpendicular to an axial lead of the first rotating shaft; the first rotating shaft is driven to be capable of driving the carrier to allow the semiconductor light source to be tested to swing by 180 degrees in a vertical plane; an optic probe is fixed on the turning arm; the mounting height is equivalent to a light path position of the semiconductor light source to be tested in a horizontal state; an axial lead of the second rotating shaft is located in a light emitting swing plane of the semiconductor light source to be tested; and the second rotating shaft is driven to be capable of driving the turning arm to allow an optic probe to horizontally rotate by 180 degrees by taking the second rotating shaft as an axis.
Description
Technical field
The invention belongs to semiconductor light sources technical field of measurement and test, relate to the far field space light intensity distributions on the fast axle of a kind of measuring semiconductor light source and slow-axis direction.
Background technology
Semiconductor light sources mainly comprises semiconductor laser light resource and LED light source.
High-power semiconductor laser has the advantages such as volume is little, lightweight, efficiency is high, the life-span is long, be widely used in Laser Processing, laser medicine, laser display and field of scientific study, become the comprehensive new and high technology that new century development is fast, achievement is many, Subject identity is wide, range of application is large.The far-field characteristic of semiconductor laser not only has importance in the homogeneity evaluating the long propagation of laser beam; May be used for analyzing semiconductor laser instrument internal failure mechanism, for development high-performance semiconductor laser instrument provides foundation simultaneously; Also be design passing through a collimating system, providing accurate angle of divergence data, is the important evidence improving optical fibre optical fibre coupling efficiency further.For this reason, accurately measuring semiconductor laser remote field characteristic seems particularly important rapidly.
The current measuring semiconductor laser remote field angle of divergence adopts dual-axis rotation spacescan method usually.Dual-axis rotation spacescan method (application publication number: CN101825517A; CN101929889A) adopting with semiconductor laser is the center of circle, and two scan arms are radius, and two-arm places detector, respectively the fast axle of probing semiconductor laser instrument and the far field space intensity distributions of slow-axis direction.The method truly can reflect the spatial intensity distribution of semiconductor laser, but semiconductor laser with detector in same scanning plane, very easily must occur in use procedure bell machines is interfered, cause system reliability low.
And for LED light source, the detection of current LED light source space distribution mainly adopts half circular sweep method (Chinese patent application 200810027632.1), in the method, photodetector is positioned on semicircle, just can be gathered the space distribution of LED light source by rotating semicircular ring.The LED intensity detector placed in the method is subject to own vol restriction, and Space Angle resolution is low, and the details caused in detected intensity distributions can not be differentiated fully.
Summary of the invention
The invention provides a kind of proving installation of the far field intensity for semiconductor light sources, delicate structure, and the problem that the system reliability can avoided bell machines is interfered and cause is low.
The object of the invention is to be achieved through the following technical solutions:
For the far field intensity proving installation of semiconductor light sources, comprise base, semiconductor light sources to be measured, light probe, wobble component and rotary components and corresponding drive motor, wherein wobble component and rotary components are all fixedly installed on described base; Described wobble component comprises relatively-stationary first turning axle and microscope carrier, semiconductor light sources to be measured is fixed on microscope carrier, the bright dipping optical axis of semiconductor light sources to be measured is vertical with the axial line of the first turning axle, drives the first turning axle that microscope carrier can be driven to make semiconductor light sources to be measured in perpendicular, swing 180 degree of scopes; Described rotary components comprises relatively-stationary second turning axle and turnover arm, second turning axle is positioned at the near-end of semiconductor light sources to be measured, light probe to be fixed on turnover arm and to be positioned at the far-end of semiconductor light sources to be measured, and the light path position when setting height(from bottom) of light probe and semiconductor light sources horizontality to be measured is suitable; The axial line of the second turning axle is positioned at the swinging plane of semiconductor light sources bright dipping to be measured; Drive the second turning axle that turnover arm can be driven to make light probe with the second turning axle for axle center horizontal rotary turnback scope.
" vertically ", " level " are relative concepts above.
Based on above scheme, the present invention also does following optimization further:
Described base is provided with the fixed head that a level is stretched out, described second rotational axis vertical is fixed by socket in described fixed head.
Above described fixed head, be provided with mounting bracket, mounting bracket and this fixed head or described base are directly fixed; Mounting bracket has two vertical back up pads, and described first rotational axis vertical is socketed on two back up pads, and microscope carrier is positioned at the inner side of two back up pads.
Described turnover arm is L-type arm, the two ends of the long portion of L-type arm respectively with the short portion vertical connection of the second turning axle, L-type arm, light probe is installed in described short portion.Here, " long portion ", " short portion " also can exchange, but consider far-field measurement demand and installing space, preferably using " short portion " as far-end.
Certain turnover arm is also not limited to this L-type, and so-called " turnover " is mainly emphasized that " arm " not extends along the second turning axle and obtained, but has the turnover of an angle, thus can realize level 180 degree scanning.More simplify such as: from the straight-arm of the oblique extension of the second turning axle, straight-arm is arranged described light probe.
Semiconductor light sources to be measured is installed on front end face or the upper surface of microscope carrier.
Described microscope carrier has straight table top, and semiconductor light sources to be measured is parallel to be fixed on table top.
Adopt above-mentioned proving installation to realize the method for semiconductor light sources far field intensity measurement, comprise the following steps:
(1) adjust microscope carrier to be horizontal, namely keep the horizontal bright dipping of semiconductor light sources to be measured; Drive the second turning axle to rotate, turnover arm straps is moved photodetector and is revolved turnback in the horizontal direction, obtains the intensity distributions of slow-axis direction;
(2) keep the bright dipping orientation of turnover arm and semiconductor light sources just right, drive the first turning axle to rotate, microscope carrier drives semiconductor light sources to be measured to rotate 180 degree towards photodetector at vertical direction, obtains the intensity distributions of quick shaft direction.
Light probe alleged in the present invention can be the light collector of the concrete form such as optical fiber, photoconductive tube, only when carrying out opto-electronic conversion and measuring, the light that light collector is collected need be imported in the device of other energy measured intensity.Will be appreciated that, directly adopt power meter, photodetector be arranged on turnover arm on, also should belong to protection scope of the present invention.
The present invention has the following advantages:
(1) far-field characteristic test can be carried out to comprising single tube, the bar polytype semiconductor laser such as bar or LED light source;
(2) physical construction is simple and clear, and reliability is high, is suitable for practicality, can eliminate mutual interference between pivot arm.
Accompanying drawing explanation
Fig. 1 is principle schematic of the present invention.
Fig. 2 is structural representation of the present invention.
1-base, 2-semiconductor laser to be measured, 3-light probe (photodetector), 4-first turning axle, 5-microscope carrier, 6-second turning axle, 7-L arm, 8-mounting bracket, 9-fixed head, 10-wobble component, 11-rotary components.
Embodiment
Test for the far field intensity of semiconductor laser below, introduce the present invention in detail.
As shown in Figure 1, the present invention passes through structural design, realize the relative photodetector of semiconductor laser to be measured 180 degree of swings (drive sweep quick shaft direction), photodetector towards semiconductor laser to be measured 180 degree rotation (active scan slow-axis direction), thus completes the far field space light intensity distributions on fast axle and slow-axis direction.
As shown in Figure 2, this device mainly comprises base 1, semiconductor laser to be measured 2, photodetector 3, wobble component and rotary components.
Wobble component 10 comprises relatively-stationary first turning axle 4 and microscope carrier 5, and microscope carrier 5 has straight table top, and semiconductor laser 2 to be measured is parallel to be fixed on table top.The bright dipping optical axis of semiconductor laser 2 to be measured is vertical with the axial line of the first turning axle 4, drives the first turning axle 4 that microscope carrier 5 can be driven to make semiconductor laser 2 to be measured in perpendicular, swing 180 degree of scopes.
Rotary components 11 comprises relatively-stationary second turning axle 6 and L-type arm 7, and fixed head 9, second turning axle 6 that a level that base 1 is provided with is stretched out vertically is socketed and is fixed on this fixed head.The top of fixed head is provided with mounting bracket 8, and mounting bracket 8 is directly fixed with this fixed head 9 or described base 1; Mounting bracket 8 has two vertical back up pads 12, and above-mentioned first turning axle 4 vertical sleeve is connected to two back up pads 12, and microscope carrier 5 is positioned at the inner side of two back up pads 12.
The two ends of the long portion of L-type arm 7 respectively with the short portion vertical connection of the second turning axle 6, L-type arm 7, photodetector 3 is installed in short portion.Second turning axle 6 is positioned at the near-end of semiconductor laser 2 to be measured, photodetector 3 to be fixed on turnover arm 7 and to be positioned at the far-end of semiconductor laser 2 to be measured, and the light path position when setting height(from bottom) of photodetector 3 and semiconductor laser 2 horizontality to be measured is suitable.The axial line of the second turning axle 6 is positioned at the swinging plane of semiconductor laser 2 to be measured bright dipping; Drive the second turning axle 6 that turnover arm 7 can be driven to make photodetector 3 with the second turning axle 6 for axle center horizontal rotary turnback scope.
Test process example:
(1) adjust microscope carrier 5 to be horizontal, namely keep the horizontal bright dipping of semiconductor laser 2 to be measured; Drive second turning axle rotate 6, L-type arm 7 drive photodetector 3 in the horizontal direction (slow-axis direction) revolve turnback, detection slow-axis direction intensity distributions.
Rotary course can be scan 180 degree from 0 degree, also can be the initial position using the bright dipping orientation of semiconductor laser 2 to be measured as L-type arm, rotate forward 90 degree, then return, negative sense 90-degree rotation.
(2) keep the bright dipping orientation of L-type arm 7 and semiconductor laser just to (i.e. the initial position of above-mentioned L-type arm), the first turning axle is driven to rotate 4, microscope carrier 5 drives semiconductor laser 3 to be measured to rotate 180 degree towards photodetector 3 at vertical direction (quick shaft direction), the intensity distributions of detection quick shaft direction.
Claims (7)
1. for the far field intensity proving installation of semiconductor light sources, it is characterized in that: comprise base, semiconductor light sources to be measured, light probe, wobble component and rotary components and corresponding drive motor, wherein wobble component and rotary components are all fixedly installed on described base;
Described wobble component comprises relatively-stationary first turning axle and microscope carrier, semiconductor light sources to be measured is fixed on microscope carrier, the bright dipping optical axis of semiconductor light sources to be measured is vertical with the axial line of the first turning axle, drives the first turning axle that microscope carrier can be driven to make semiconductor light sources to be measured in perpendicular, swing 180 degree of scopes;
Described rotary components comprises relatively-stationary second turning axle and turnover arm, second turning axle is positioned at the near-end of semiconductor light sources to be measured, light probe to be fixed on turnover arm and to be positioned at the far-end of semiconductor light sources to be measured, and the light path position when setting height(from bottom) of light probe and semiconductor light sources horizontality to be measured is suitable; The axial line of the second turning axle is positioned at the swinging plane of semiconductor light sources bright dipping to be measured; Drive the second turning axle that turnover arm can be driven to make light probe with the second turning axle for axle center horizontal rotary turnback scope.
2. the far field intensity proving installation for semiconductor light sources according to claim 1, is characterized in that: described base is provided with the fixed head that a level is stretched out, and described second rotational axis vertical is fixed by socket in described fixed head.
3. the far field intensity proving installation for semiconductor light sources according to claim 2, is characterized in that: above described fixed head, be provided with mounting bracket, and mounting bracket and this fixed head or described base are directly fixed; Mounting bracket has two vertical back up pads, and described first rotational axis vertical is socketed on two back up pads, and microscope carrier is positioned at the inner side of two back up pads.
4. according to the arbitrary described far field intensity proving installation for semiconductor light sources of claims 1 to 3, it is characterized in that: described turnover arm is L-type arm, the two ends of the long portion of L-type arm respectively with the short portion vertical connection of the second turning axle, L-type arm, light probe is installed in described short portion.
5., according to the arbitrary described far field intensity proving installation for semiconductor light sources of claims 1 to 3, it is characterized in that: semiconductor light sources to be measured is installed on front end face or the upper surface of microscope carrier.
6. the far field intensity proving installation for semiconductor light sources according to claim 5, is characterized in that: described microscope carrier has straight table top, and semiconductor light sources to be measured is parallel to be fixed on table top.
7. adopt proving installation described in claim 1 to realize the method for semiconductor light sources far field intensity measurement, comprise the following steps:
(1) adjust microscope carrier to be horizontal, namely keep the horizontal bright dipping of semiconductor light sources to be measured; Drive the second turning axle to rotate, turnover arm straps is moved photodetector and is revolved turnback in the horizontal direction, obtains the intensity distributions of slow-axis direction;
(2) keep the bright dipping orientation of turnover arm and semiconductor light sources just right, drive the first turning axle to rotate, microscope carrier drives semiconductor light sources to be measured to rotate 180 degree towards photodetector at vertical direction, obtains the intensity distributions of quick shaft direction.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410808513.5A CN104515595B (en) | 2014-12-20 | 2014-12-20 | Testing device for far field intensity of semiconductor light source |
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| CN201410808513.5A CN104515595B (en) | 2014-12-20 | 2014-12-20 | Testing device for far field intensity of semiconductor light source |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106596072A (en) * | 2016-12-27 | 2017-04-26 | 东莞勤上光电股份有限公司 | LED light source flickering detector |
| CN108534994A (en) * | 2018-03-23 | 2018-09-14 | 中国科学院西安光学精密机械研究所 | Device and method for testing uniformity of large-diameter uniform light source |
| CN108760240A (en) * | 2018-06-27 | 2018-11-06 | 上海中医药大学 | A kind of detection method and device of tcm inspection instrument acquisition light path illuminance uniformity |
| CN109443699A (en) * | 2018-11-16 | 2019-03-08 | 苏州伊欧陆系统集成有限公司 | A kind of edge-emitting laser slide glass test fiber-optical coupled cramping apparatus system |
| CN110658501A (en) * | 2019-10-08 | 2020-01-07 | 厦门金龙联合汽车工业有限公司 | Radar range measuring system and method |
| CN112909726A (en) * | 2021-01-20 | 2021-06-04 | 苏州长光华芯光电技术股份有限公司 | Multifunctional testing device for laser chip |
| CN114337807A (en) * | 2020-12-28 | 2022-04-12 | 苏州联讯仪器有限公司 | Multi-temperature test system of optical communication module |
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| CN202188902U (en) * | 2011-08-25 | 2012-04-11 | 杭州远方光电信息股份有限公司 | Nearfield distribution photometer |
| EP2728339A1 (en) * | 2012-10-30 | 2014-05-07 | Hitachi Ltd. | Equipment and method for diagnosing sliding condition of rotating electrical machine |
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| JPS58173438A (en) * | 1982-04-06 | 1983-10-12 | Mitsubishi Electric Corp | Measuring device for far field pattern of light emitting element |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106596072A (en) * | 2016-12-27 | 2017-04-26 | 东莞勤上光电股份有限公司 | LED light source flickering detector |
| CN108534994A (en) * | 2018-03-23 | 2018-09-14 | 中国科学院西安光学精密机械研究所 | Device and method for testing uniformity of large-diameter uniform light source |
| CN108534994B (en) * | 2018-03-23 | 2024-04-05 | 中国科学院西安光学精密机械研究所 | Device and method for testing uniformity of large-caliber uniform light source |
| CN108760240A (en) * | 2018-06-27 | 2018-11-06 | 上海中医药大学 | A kind of detection method and device of tcm inspection instrument acquisition light path illuminance uniformity |
| CN108760240B (en) * | 2018-06-27 | 2024-04-09 | 上海合参智能医疗科技有限公司 | Detection method and device for uniformity of illumination of acquisition light path of traditional Chinese medicine inspection instrument |
| CN109443699A (en) * | 2018-11-16 | 2019-03-08 | 苏州伊欧陆系统集成有限公司 | A kind of edge-emitting laser slide glass test fiber-optical coupled cramping apparatus system |
| CN110658501A (en) * | 2019-10-08 | 2020-01-07 | 厦门金龙联合汽车工业有限公司 | Radar range measuring system and method |
| CN110658501B (en) * | 2019-10-08 | 2021-10-15 | 厦门金龙联合汽车工业有限公司 | Radar range measuring system and method |
| CN114337807A (en) * | 2020-12-28 | 2022-04-12 | 苏州联讯仪器有限公司 | Multi-temperature test system of optical communication module |
| CN114337807B (en) * | 2020-12-28 | 2024-03-01 | 苏州联讯仪器股份有限公司 | Multi-temperature test system of optical communication module |
| CN112909726A (en) * | 2021-01-20 | 2021-06-04 | 苏州长光华芯光电技术股份有限公司 | Multifunctional testing device for laser chip |
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Address after: 710077 Shaanxi High Power Semiconductor Laser Industrial Park, No. 56 Zhang 86 Road, Xi'an High-tech Zone, Shaanxi Province Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710077 Shaanxi High Power Semiconductor Laser Industrial Park, No. 56 Zhang 86 Road, Xi'an High-tech Zone, Shaanxi Province Patentee before: Xi'an Focuslight Technology Co., Ltd. |
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