CN104515595A - Testing device for far field intensity of semiconductor light source - Google Patents
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Abstract
本发明提供一种用于半导体光源的远场强度的测试装置，结构精巧，且能够避免双臂机械上干涉而导致的系统可靠性低的问题。该装置主要包括相对固定的第一旋转轴和载台、相对固定的第二旋转轴和转折臂；待测半导体光源固定于载台上，待测半导体光源的出光光轴与第一旋转轴的轴心线垂直，驱动第一旋转轴能够带动载台使待测半导体光源在竖直平面内摆动180度范围；光探头固定于转折臂上，安装高度与待测半导体光源水平状态时的光路位置相当；第二旋转轴的轴心线位于待测半导体光源出光的摆动平面内；驱动第二旋转轴能够带动转折臂使光探头以第二旋转轴为轴心水平旋转180度范围。
The invention provides a test device for the far-field intensity of a semiconductor light source, which has a compact structure and can avoid the problem of low system reliability caused by mechanical interference of two arms. The device mainly includes a relatively fixed first rotation axis and a stage, a relatively fixed second rotation axis and a turning arm; The axis line is vertical, driving the first rotation axis can drive the stage to make the semiconductor light source to be tested swing in the vertical plane by 180 degrees; the optical probe is fixed on the turning arm, and the installation height is the same as the optical path position when the semiconductor light source to be tested is horizontal Equivalent; the axis line of the second rotation axis is located in the swing plane of the semiconductor light source to be tested; driving the second rotation axis can drive the turning arm to make the light probe horizontally rotate 180 degrees with the second rotation axis as the axis.
Description
技术领域technical field
本发明属于半导体光源测试技术领域，涉及一种测试半导体光源快轴和慢轴方向上的远场空间光强度分布。The invention belongs to the technical field of semiconductor light source testing, and relates to a method for testing the far-field spatial light intensity distribution in the fast axis and slow axis directions of a semiconductor light source.
背景技术Background technique
半导体光源主要包括半导体激光光源和LED光源。Semiconductor light sources mainly include semiconductor laser light sources and LED light sources.
高功率半导体激光器具有体积小、重量轻、效率高、寿命长等优点，已广泛用于激光加工、激光医疗、激光显示及科学研究领域，成为新世纪发展快、成果多、学科渗透广、应用范围大的综合性高新技术。半导体激光器的远场特性不仅在评价激光光束长距离传播的均匀性具有重要性；同时可以用于分析半导体激光器内部失效机制，为研制高性能半导体激光器提供依据；也是为设计光束准直系统，提供准确发散角数据，是进一步提高光纤光纤耦合效率的重要依据。为此，精确快速地测试半导体激光器远场特性显得尤为重要。High-power semiconductor lasers have the advantages of small size, light weight, high efficiency, and long life. They have been widely used in laser processing, laser medical treatment, laser display, and scientific research. A wide range of comprehensive high-tech. The far-field characteristics of semiconductor lasers are not only important in evaluating the uniformity of long-distance propagation of laser beams; at the same time, they can be used to analyze the internal failure mechanism of semiconductor lasers, providing a basis for the development of high-performance semiconductor lasers; Accurate divergence angle data is an important basis for further improving the fiber-optic coupling efficiency. For this reason, it is particularly important to test the far-field characteristics of semiconductor lasers accurately and quickly.
目前测试半导体激光器远场发散角通常采用双轴旋转空间扫描法。双轴旋转空间扫描法(申请公布号：CN101825517A；CN101929889A)采用以半导体激光器为圆心，两扫描臂为半径，两臂上放置探测器，分别探测半导体激光器的快轴和慢轴方向的远场空间强度分布。该方法能够真实反映半导体激光器的空间强度分布，但是半导体激光器必须和探测器在同一扫描面内，使用过程中极易出现双臂机械上干涉，导致系统可靠性低。At present, the far-field divergence angle of semiconductor lasers is usually measured by the dual-axis rotating space scanning method. The dual-axis rotating space scanning method (application publication number: CN101825517A; CN101929889A) uses a semiconductor laser as the center of the circle, two scanning arms as the radius, and detectors are placed on the two arms to detect the far-field space in the fast axis and slow axis directions of the semiconductor laser respectively. intensity distribution. This method can truly reflect the spatial intensity distribution of the semiconductor laser, but the semiconductor laser must be in the same scanning plane as the detector, which is prone to mechanical interference between the two arms during use, resulting in low system reliability.
而对于LED光源，目前LED光源空间分布的探测主要采用半圆扫描法(中国专利申请200810027632.1)，在该方法中，光电探测器放置于半圆上，通过旋转半圆环便可采集LED光源的空间分布。该方法中所放置的LED强度探测器受到自身体积限制，空间角分辨率低，引起了所探测的强度分布中的细节不能得到充分的分辨。As for the LED light source, at present, the detection of the spatial distribution of the LED light source mainly adopts the semicircle scanning method (Chinese patent application 200810027632.1). In this method, the photodetector is placed on the semicircle, and the spatial distribution of the LED light source can be collected by rotating the semicircle. . The LED intensity detector placed in this method is limited by its own volume, and the spatial angular resolution is low, so that the details in the detected intensity distribution cannot be fully resolved.
发明内容Contents of the invention
本发明提供一种用于半导体光源的远场强度的测试装置，结构精巧，且能够避免双臂机械上干涉而导致的系统可靠性低的问题。The invention provides a test device for the far-field intensity of a semiconductor light source, which has a compact structure and can avoid the problem of low system reliability caused by mechanical interference of two arms.
本发明的目的是通过以下技术方案实现的：The purpose of the present invention is achieved through the following technical solutions:
用于半导体光源的远场强度测试装置，包括底座、待测半导体光源、光探头、摆动组件和旋转组件以及相应的驱动电机，其中摆动组件和旋转组件均固定安装于所述底座上；所述摆动组件包括相对固定的第一旋转轴和载台，待测半导体光源固定于载台上，待测半导体光源的出光光轴与第一旋转轴的轴心线垂直，驱动第一旋转轴能够带动载台使待测半导体光源在竖直平面内摆动180度范围；所述旋转组件包括相对固定的第二旋转轴和转折臂，第二旋转轴位于待测半导体光源的近端，光探头固定于转折臂上并位于待测半导体光源的远端，光探头的安装高度与待测半导体光源水平状态时的光路位置相当；第二旋转轴的轴心线位于待测半导体光源出光的摆动平面内；驱动第二旋转轴能够带动转折臂使光探头以第二旋转轴为轴心水平旋转180度范围。A far-field strength testing device for a semiconductor light source, including a base, a semiconductor light source to be tested, an optical probe, a swing assembly and a rotating assembly, and a corresponding drive motor, wherein the swing assembly and the rotating assembly are fixedly mounted on the base; the The swing assembly includes a relatively fixed first rotating shaft and a stage, the semiconductor light source to be tested is fixed on the stage, the optical axis of the semiconductor light source to be tested is perpendicular to the axis of the first rotating shaft, and the driving of the first rotating shaft can drive The stage makes the semiconductor light source to be tested swing 180 degrees in the vertical plane; the rotating assembly includes a relatively fixed second rotating shaft and a turning arm, the second rotating shaft is located at the near end of the semiconductor light source to be measured, and the optical probe is fixed on On the turning arm and located at the far end of the semiconductor light source to be tested, the installation height of the optical probe is equivalent to the position of the optical path when the semiconductor light source to be tested is in a horizontal state; the axis line of the second rotation axis is located in the swing plane of the semiconductor light source to be tested; Driving the second rotating shaft can drive the turning arm to make the optical probe rotate horizontally within a range of 180 degrees around the second rotating shaft.
以上“竖直”、“水平”是相对的概念。The above "vertical" and "horizontal" are relative concepts.
基于以上方案，本发明还进一步作如下优化：Based on the above scheme, the present invention is further optimized as follows:
所述底座上设置有一水平伸出的固定板，所述第二旋转轴垂直套接固定于所述固定板。A horizontally protruding fixing plate is arranged on the base, and the second rotating shaft is vertically socketed and fixed on the fixing plate.
在所述固定板的上方设置有安装支架，安装支架与该固定板或者所述底座直接固定；安装支架具有竖直的两个支撑板，所述第一旋转轴垂直套接于两个支撑板，载台位于两个支撑板的内侧。A mounting bracket is provided above the fixing plate, and the mounting bracket is directly fixed to the fixing plate or the base; the mounting bracket has two vertical support plates, and the first rotating shaft is vertically sleeved on the two support plates , the stage is located inside the two support plates.
所述转折臂为L型臂，L型臂的长部的两端分别与第二旋转轴、L型臂的短部垂直相接，光探头安装于所述短部上。这里，“长部”、“短部”也可以对调，但考虑到远场测量需求和安装空间，最好以“短部”作为远端。The turning arm is an L-shaped arm, and the two ends of the long part of the L-shaped arm are vertically connected with the second rotating shaft and the short part of the L-shaped arm respectively, and the optical probe is installed on the short part. Here, the "long part" and "short part" can also be swapped, but considering the far-field measurement requirements and installation space, it is best to use the "short part" as the far end.
当然转折臂也不限于这种L型，所谓“转折”主要是强调“臂”并非沿第二旋转轴延伸得到，而是有一个角度的转折，从而能够实现水平180度扫描。更简化的例如：自第二旋转轴斜向延伸的直臂，直臂上设置所述光探头。Of course, the turning arm is not limited to this L shape. The so-called "turning" mainly emphasizes that the "arm" does not extend along the second rotation axis, but turns at an angle, so that horizontal 180-degree scanning can be realized. A more simplified example: a straight arm extending obliquely from the second rotation axis, and the optical probe is arranged on the straight arm.
待测半导体光源安装于载台的前端面或者上表面。The semiconductor light source to be tested is installed on the front surface or the upper surface of the stage.
所述载台具有平直的台面，待测半导体光源平行固定于台面上。The carrying platform has a flat table surface, and the semiconductor light source to be tested is fixed parallel to the table surface.
采用上述测试装置实现半导体光源远场强度测量的方法，包括以下步骤：The method for realizing the far-field intensity measurement of a semiconductor light source by using the above-mentioned test device includes the following steps:
(1)调整载台处于水平位置，即保持待测半导体光源水平出光；驱动第二旋转轴旋转，转折臂带动光电探测器在水平方向旋转180度，获得慢轴方向的强度分布；(1) Adjust the stage to be in a horizontal position, that is, keep the semiconductor light source to be tested to emit light horizontally; drive the second rotation axis to rotate, and the turning arm drives the photodetector to rotate 180 degrees in the horizontal direction to obtain the intensity distribution in the direction of the slow axis;
(2)保持转折臂与半导体光源的出光方位正对，驱动第一旋转轴旋转，载台带动待测半导体光源面向光电探测器在竖直方向转动180度，获得快轴方向的强度分布。(2) Keep the turning arm facing the light emitting direction of the semiconductor light source, drive the first rotation axis to rotate, and the stage drives the semiconductor light source to be tested to rotate 180 degrees in the vertical direction facing the photodetector to obtain the intensity distribution in the fast axis direction.
本发明中所称的光探头，可以是光纤、光导管等具体形式的光收集器，只不过在进行光电转换测量时，需将光收集器收集到的光导入其他能测量强度的装置中。应当认识到，直接采用功率计、光电探测器安装在转折臂上，也应属于本发明的保护范围。The optical probe referred to in the present invention can be a specific form of optical collector such as optical fiber, light guide, etc., but when performing photoelectric conversion measurement, the light collected by the optical collector needs to be introduced into other devices capable of measuring intensity. It should be recognized that directly installing the power meter and the photodetector on the turning arm should also belong to the protection scope of the present invention.
本发明具有以下优点：The present invention has the following advantages:
(1)能够对包括单管、巴条等多种类型半导体激光器或LED光源进行远场特性测试；(1) It can test the far-field characteristics of various types of semiconductor lasers or LED light sources, including single tubes and bars;
(2)机械结构简明，可靠性高，适于实用，能够消除旋转臂之间相互干涉现象。(2) The mechanical structure is simple, the reliability is high, it is suitable for practical use, and the phenomenon of mutual interference between the rotating arms can be eliminated.
附图说明Description of drawings
图1为本发明的原理示意图。Fig. 1 is a schematic diagram of the principle of the present invention.
图2为本发明的结构示意图。Fig. 2 is a structural schematic diagram of the present invention.
1-底座，2-待测半导体激光器，3-光探头(光电探测器)，4-第一旋转轴，5-载台，6-第二旋转轴，7-L型臂，8-安装支架，9-固定板，10-摆动组件，11-旋转组件。1-base, 2-semiconductor laser to be tested, 3-optical probe (photodetector), 4-first rotation axis, 5-stage, 6-second rotation axis, 7-L-shaped arm, 8-installation bracket , 9-fixed plate, 10-swing assembly, 11-rotation assembly.
具体实施方式Detailed ways
以下以半导体激光器的远场强度测试为例，详细介绍本发明。The present invention will be described in detail below by taking the far-field strength test of a semiconductor laser as an example.
如图1所示，本发明通过结构设计，实现待测半导体激光器相对光电探测器180度摆动(被动扫描快轴方向)，光电探测器面向待测半导体激光器180度旋转(主动扫描慢轴方向)，从而完成快轴和慢轴方向上的远场空间光强度分布。As shown in Figure 1, the present invention realizes 180-degree swing (passive scanning fast axis direction) of the semiconductor laser to be tested relative to the photodetector through structural design, and the 180-degree rotation (active scanning slow axis direction) of the photodetector facing the semiconductor laser to be measured , so as to complete the far-field spatial light intensity distribution in the directions of the fast axis and the slow axis.
如图2所示，该装置主要包括底座1、待测半导体激光器2、光电探测器3、摆动组件和旋转组件。As shown in Figure 2, the device mainly includes a base 1, a semiconductor laser to be tested 2, a photodetector 3, a swing assembly and a rotation assembly.
摆动组件10包括相对固定的第一旋转轴4和载台5，载台5具有平直的台面，待测半导体激光器2平行固定于台面上。待测半导体激光器2的出光光轴与第一旋转轴4的轴心线垂直，驱动第一旋转轴4能够带动载台5使待测半导体激光器2在竖直平面内摆动180度范围。The swing assembly 10 includes a relatively fixed first rotating shaft 4 and a stage 5. The stage 5 has a straight table surface, and the semiconductor laser 2 to be tested is fixed parallel to the table surface. The optical axis of the semiconductor laser 2 to be tested is perpendicular to the axis of the first rotating shaft 4, and driving the first rotating shaft 4 can drive the stage 5 to make the semiconductor laser 2 to be tested swing within a range of 180 degrees in the vertical plane.
旋转组件11包括相对固定的第二旋转轴6和L型臂7，底座1上设置有一水平伸出的固定板9，第二旋转轴6垂直套接固定于该固定板。固定板的上方设置有安装支架8，安装支架8与该固定板9或者所述底座1直接固定；安装支架8具有竖直的两个支撑板12，上述第一旋转轴4垂直套接于两个支撑板12，载台5位于两个支撑板12的内侧。The rotating assembly 11 includes a relatively fixed second rotating shaft 6 and an L-shaped arm 7. A horizontally protruding fixing plate 9 is provided on the base 1, and the second rotating shaft 6 is vertically socketed and fixed on the fixing plate. The top of the fixed plate is provided with a mounting bracket 8, and the mounting bracket 8 is directly fixed with the fixed plate 9 or the base 1; the mounting bracket 8 has two vertical support plates 12, and the above-mentioned first rotating shaft 4 is vertically sleeved on the two There are two support plates 12, and the stage 5 is located inside the two support plates 12.
L型臂7的长部的两端分别与第二旋转轴6、L型臂7的短部垂直相接，光电探测器3安装于短部上。第二旋转轴6位于待测半导体激光器2的近端，光电探测器3固定于转折臂7上并位于待测半导体激光器2的远端，光电探测器3的安装高度与待测半导体激光器2水平状态时的光路位置相当。第二旋转轴6的轴心线位于待测半导体激光器2出光的摆动平面内；驱动第二旋转轴6能够带动转折臂7使光电探测器3以第二旋转轴6为轴心水平旋转180度范围。Both ends of the long part of the L-shaped arm 7 are vertically connected with the second rotating shaft 6 and the short part of the L-shaped arm 7 respectively, and the photodetector 3 is installed on the short part. The second rotation axis 6 is positioned at the near end of the semiconductor laser to be measured 2, and the photodetector 3 is fixed on the turning arm 7 and is positioned at the far end of the semiconductor laser to be measured 2, and the installation height of the photodetector 3 is level with the semiconductor laser to be measured 2 The position of the light path in the state is equivalent. The axis line of the second rotation axis 6 is located in the swing plane of the light output of the semiconductor laser 2 to be tested; driving the second rotation axis 6 can drive the turning arm 7 to make the photodetector 3 horizontally rotate 180 degrees with the second rotation axis 6 as the axis scope.
测试过程示例：Example of a test procedure:
(1)调整载台5处于水平位置，即保持待测半导体激光器2水平出光；驱动第二旋转轴旋转6，L型臂7带动光电探测器3在水平方向(慢轴方向)旋转180度，探测慢轴方向的强度分布。(1) Adjust the stage 5 to be in a horizontal position, that is, keep the semiconductor laser 2 to be tested to emit light horizontally; drive the second rotation axis to rotate 6, and the L-shaped arm 7 drives the photodetector 3 to rotate 180 degrees in the horizontal direction (slow axis direction), Probe the intensity distribution in the direction of the slow axis.
旋转过程可以是从0度扫描到180度，也可以是以待测半导体激光器2的出光方位作为L型臂的初始位置，正向旋转90度，再回位，负向旋转90度。The rotation process can be scanned from 0° to 180°, or the light emitting orientation of the semiconductor laser 2 to be tested can be used as the initial position of the L-shaped arm, rotated 90° in the positive direction, and then return to the position, and rotated 90° in the negative direction.
(2)保持L型臂7与半导体激光器的出光方位正对(即上述L型臂的初始位置)，驱动第一旋转轴旋转4，载台5带动待测半导体激光器3面向光电探测器3在竖直方向(快轴方向)转动180度，探测快轴方向的强度分布。(2) keep the light emitting direction of the L-shaped arm 7 and the semiconductor laser just opposite (that is, the initial position of the above-mentioned L-shaped arm), drive the first rotation axis to rotate 4, and the stage 5 drives the semiconductor laser to be tested 3 to face the photodetector 3 in The vertical direction (fast axis direction) is rotated 180 degrees to detect the intensity distribution in the fast axis direction.
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Cited By (7)
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| CN106596072A (en) * | 2016-12-27 | 2017-04-26 | 东莞勤上光电股份有限公司 | LED light source flickering detector |
| CN108534994A (en) * | 2018-03-23 | 2018-09-14 | 中国科学院西安光学精密机械研究所 | Device and method for testing uniformity of large-diameter uniform light source |
| CN108760240A (en) * | 2018-06-27 | 2018-11-06 | 上海中医药大学 | A kind of detection method and device of tcm inspection instrument acquisition light path illuminance uniformity |
| CN109443699A (en) * | 2018-11-16 | 2019-03-08 | 苏州伊欧陆系统集成有限公司 | A kind of edge-emitting laser slide glass test fiber-optical coupled cramping apparatus system |
| CN110658501A (en) * | 2019-10-08 | 2020-01-07 | 厦门金龙联合汽车工业有限公司 | Radar range measuring system and method |
| CN112909726A (en) * | 2021-01-20 | 2021-06-04 | 苏州长光华芯光电技术股份有限公司 | Multifunctional testing device for laser chip |
| CN114337807A (en) * | 2020-12-28 | 2022-04-12 | 苏州联讯仪器有限公司 | Multi-temperature test system of optical communication module |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106596072A (en) * | 2016-12-27 | 2017-04-26 | 东莞勤上光电股份有限公司 | LED light source flickering detector |
| CN108534994A (en) * | 2018-03-23 | 2018-09-14 | 中国科学院西安光学精密机械研究所 | Device and method for testing uniformity of large-diameter uniform light source |
| CN108534994B (en) * | 2018-03-23 | 2024-04-05 | 中国科学院西安光学精密机械研究所 | Device and method for testing uniformity of large-caliber uniform light source |
| CN108760240A (en) * | 2018-06-27 | 2018-11-06 | 上海中医药大学 | A kind of detection method and device of tcm inspection instrument acquisition light path illuminance uniformity |
| CN108760240B (en) * | 2018-06-27 | 2024-04-09 | 上海合参智能医疗科技有限公司 | Detection method and device for uniformity of illumination of acquisition light path of traditional Chinese medicine inspection instrument |
| CN109443699A (en) * | 2018-11-16 | 2019-03-08 | 苏州伊欧陆系统集成有限公司 | A kind of edge-emitting laser slide glass test fiber-optical coupled cramping apparatus system |
| CN110658501A (en) * | 2019-10-08 | 2020-01-07 | 厦门金龙联合汽车工业有限公司 | Radar range measuring system and method |
| CN110658501B (en) * | 2019-10-08 | 2021-10-15 | 厦门金龙联合汽车工业有限公司 | Radar range measuring system and method |
| CN114337807A (en) * | 2020-12-28 | 2022-04-12 | 苏州联讯仪器有限公司 | Multi-temperature test system of optical communication module |
| CN114337807B (en) * | 2020-12-28 | 2024-03-01 | 苏州联讯仪器股份有限公司 | Multi-temperature test system of optical communication module |
| CN112909726A (en) * | 2021-01-20 | 2021-06-04 | 苏州长光华芯光电技术股份有限公司 | Multifunctional testing device for laser chip |
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Address after: 710077 Shaanxi High Power Semiconductor Laser Industrial Park, No. 56 Zhang 86 Road, Xi'an High-tech Zone, Shaanxi Province Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710077 Shaanxi High Power Semiconductor Laser Industrial Park, No. 56 Zhang 86 Road, Xi'an High-tech Zone, Shaanxi Province Patentee before: Xi'an Focuslight Technology Co., Ltd. |