CN104515595B - Testing device for far field intensity of semiconductor light source - Google Patents
Testing device for far field intensity of semiconductor light source Download PDFInfo
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- CN104515595B CN104515595B CN201410808513.5A CN201410808513A CN104515595B CN 104515595 B CN104515595 B CN 104515595B CN 201410808513 A CN201410808513 A CN 201410808513A CN 104515595 B CN104515595 B CN 104515595B
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- semiconductor light
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Abstract
The invention provides a testing device for far field intensity of a semiconductor light source. The testing device is ingenious in structure and can avoid the problem of low system reliability due to interference on a double-arm machine. The device mainly comprises a first rotating shaft and a carrier that are fixed oppositely, as well as a second rotating shaft and a turning arm that are fixed oppositely, wherein the semiconductor light source to be tested is fixed on the carrier; a light emitting axis of the semiconductor light source to be tested is perpendicular to an axial lead of the first rotating shaft; the first rotating shaft is driven to be capable of driving the carrier to allow the semiconductor light source to be tested to swing by 180 degrees in a vertical plane; an optic probe is fixed on the turning arm; the mounting height is equivalent to a light path position of the semiconductor light source to be tested in a horizontal state; an axial lead of the second rotating shaft is located in a light emitting swing plane of the semiconductor light source to be tested; and the second rotating shaft is driven to be capable of driving the turning arm to allow an optic probe to horizontally rotate by 180 degrees by taking the second rotating shaft as an axis.
Description
Technical field
The invention belongs to semiconductor light source technical field of measurement and test, it is related to a kind of test semiconductor light source fast axle and slow-axis direction
On far field space light intensity distributions.
Background technology
Semiconductor light source mainly includes semiconductor laser light resource and LED light source.
High-power semiconductor laser has the advantages that small volume, lightweight, efficiency high, long lifespan, is widely used in sharp
Light processing, laser medicine, laser display and field of scientific study, as new century development it is fast, achievement is more, Subject identity is wide, answer
With the big comprehensive new and high technology of scope.The far-field characteristic of semiconductor laser is not only evaluating what laser beam was propagated over long distances
Uniformity has importance；Can be used for analyzing semiconductor laser internal failure mechanism simultaneously, to develop high-performance semiconductor
Laser provides foundation；It is design passing through a collimating system to be also, there is provided accurately dissipates angular data, is further to improve optical fibre optical fibre
The important evidence of coupling efficiency.Therefore, accurately and quickly test semiconductor laser remote field characteristic is particularly important.
Test far field divergence angle of semiconductor laser generally uses dual-axis rotation spacescan method at present.Dual-axis rotation space
Scanning method (application publication number：CN101825517A；CN101929889A) use with semiconductor laser as the center of circle, two scan arms
It is radius, detector is placed in two-arm, separately detects the fast axle of semiconductor laser and the far field space intensity point of slow-axis direction
Cloth.The method can truly reflect the spatial intensity distribution of semiconductor laser, but semiconductor laser must and detector
Easily occur interfering in bell machines in same scanning plane, during use, cause system reliability low.
And for LED light source, the detection of current LED light source spatial distribution mainly uses half circular sweep method (Chinese patent Shen
Please 200810027632.1), in the method, photodetector is positioned on semicircle, and LED just can be gathered by rotating semicircular ring
The spatial distribution of light source.The LED intensity detector placed in the method is limited by own vol, and space angular resolution is low,
Causing the details in detected intensity distribution can not sufficiently be differentiated.
The content of the invention
The present invention provides a kind of test device of far field intensity for semiconductor light source, delicate structure, and can avoid
The low problem of system reliability caused by interfering in bell machines.
The purpose of the present invention is achieved through the following technical solutions：
For the far field intensity test device of semiconductor light source, including base, semiconductor light source to be measured, light probe, swing
Component and rotary components and corresponding motor, wherein wobble component and rotary components are fixedly installed in the base
On；The wobble component includes relatively-stationary first rotary shaft and microscope carrier, and semiconductor light source to be measured is fixed on microscope carrier, to be measured
The light extraction optical axis of semiconductor light source is vertical with the axial line of the first rotary shaft, drives the first rotary shaft that microscope carrier can be driven to make to be measured
Semiconductor light source swings 180 degree scope in perpendicular；The rotary components include relatively-stationary second rotary shaft and turn
Folding arm, the second rotary shaft is located at the near-end of semiconductor light source to be measured, and light probe is fixed on turnover arm and is located at semiconductor to be measured
The distal end of light source, the light path position when setting height(from bottom) of light probe is with semiconductor light source horizontality to be measured is suitable；Second rotation
The axial line of axle is located in the swinging plane of semiconductor light source light extraction to be measured；Drive the second rotary shaft can drive turnover arm make light
Probe horizontally rotates 180 degree scope by axle center of the second rotary shaft.
" vertical ", " level " are relative concepts above.
Based on above scheme, the present invention also further makees following optimization：
A fixed plate for protruding horizontally up is provided with the base, second rotary shaft is vertically fixed by socket in described solid
Fixed board.
Mounting bracket is provided with above the fixed plate, mounting bracket is directly solid with the fixed plate or the base
It is fixed；Mounting bracket has two vertical supporting plates, and first rotary shaft is vertically socketed on two supporting plates, and microscope carrier is located at two
The inner side of individual supporting plate.
The turnover arm is L-type arm, the two ends in the portion long of L-type arm phase vertical with the short portion of the second rotary shaft, L-type arm respectively
Connect, light probe is installed in the short portion.Here, " portion long ", " short portion " can also exchange, but in view of far-field measurement demand and
Installing space, preferably using " short portion " as distal end.
Certainly turnover arm is also not necessarily limited to this L-type, and so-called " turnover " is mainly and emphasizes that " arm " prolongs not along the second rotary shaft
Stretch and obtain, but have a turnover for angle such that it is able to realize horizontal 180 degree scanning.It is more simplified for example：From the second rotation
The straight-arm that axle is extended obliquely out, sets the light probe on straight-arm.
Semiconductor light source to be measured is installed on front end face or the upper surface of microscope carrier.
The microscope carrier has straight table top, and semiconductor light source to be measured is parallel to be fixed on table top.
The method that semiconductor light source far field intensity is measured is realized using above-mentioned test device, is comprised the following steps：
(1) adjustment microscope carrier is horizontal, that is, keep the horizontal light extraction of semiconductor light source to be measured；The second rotary shaft is driven to revolve
Turn, turnover arm drives photodetector to rotate 180 degree in the horizontal direction, obtains the intensity distribution of slow-axis direction；
(2) keep turnover arm just right with the light extraction orientation of semiconductor light source, drive the rotation of the first rotary shaft, microscope carrier drives and treats
Survey semiconductor light source and rotate 180 degree in vertical direction towards photodetector, obtain the intensity distribution of quick shaft direction.
Alleged light probe in the present invention, can be the light collector of the concrete forms such as optical fiber, photoconductive tube, only enter
When row opto-electronic conversion is measured, the light that need to be collected into light collector is imported in the device of other energy measurement intensities.It should be appreciated that
Directly it is arranged on turnover arm using power meter, photodetector, should also belongs to protection scope of the present invention.
The present invention has advantages below：
(1) far-field characteristic survey can be carried out to polytype semiconductor laser or the LED light source such as including single tube, bar bar
Examination；
(2) mechanical structure simplicity, reliability is high, is suitable to practicality, and can eliminate interfere phenomenon between turning arm.
Brief description of the drawings
Fig. 1 is principle schematic of the invention.
Fig. 2 is structural representation of the invention.
1- bases, 2- semiconductor lasers to be measured, 3- light probes (photodetector), the rotary shafts of 4- first, 5- microscope carriers, 6-
Second rotary shaft, 7-L arm, 8- mounting brackets, 9- fixed plates, 10- wobble components, 11- rotary components.
Specific embodiment
Below by taking the far field intensity test of semiconductor laser as an example, the present invention is discussed in detail.
As shown in figure 1, the present invention realizes semiconductor laser to be measured with respect to photodetector 180 degree by structure design
Swing (drive sweep quick shaft direction), photodetector rotates (active scan slow axis side towards semiconductor laser 180 degree to be measured
To), so as to complete the far field space light intensity distributions in fast axle and slow-axis direction.
As shown in Fig. 2 the device mainly includes base 1, semiconductor laser to be measured 2, photodetector 3, wobble component
And rotary components.
Wobble component 10 includes relatively-stationary first rotary shaft 4 and microscope carrier 5, and microscope carrier 5 has straight table top, to be measured half
Conductor laser 2 is parallel to be fixed on table top.The axial line of the light extraction optical axis of semiconductor laser to be measured 2 and the first rotary shaft 4
Vertically, driving the first rotary shaft 4 can drive the microscope carrier 5 to make semiconductor laser to be measured 2 that 180 degree model is swung in perpendicular
Enclose.
Rotary components 11 include relatively-stationary second rotary shaft 6 and L-type arm 7, one is provided with base 1 and is protruded horizontally up
Fixed plate 9, the second rotary shaft 6 is vertically fixed by socket in the fixed plate.Mounting bracket 8 is provided with above fixed plate, branch is installed
Frame 8 is directly fixed with the fixed plate 9 or the base 1；Mounting bracket 8 has two vertical supporting plates 12, above-mentioned first
Rotary shaft 4 is vertically socketed on two supporting plates 12, and microscope carrier 5 is located at two inner sides of supporting plate 12.
The two ends in the portion long of L-type arm 7 respectively with the second rotary shaft 6, short portion's vertical connection of L-type arm 7, photodetector 3
It is installed in short portion.Second rotary shaft 6 is located at the near-end of semiconductor laser to be measured 2, and photodetector 3 is fixed on turnover arm 7
Above and positioned at the distal end of semiconductor laser to be measured 2, the setting height(from bottom) of photodetector 3 and the level of semiconductor laser to be measured 2
Light path position during state is suitable.The axial line of the second rotary shaft 6 is located at the swinging plane of the light extraction of semiconductor laser to be measured 2
It is interior；Driving the second rotary shaft 6 can drive the turnover arm 7 to make photodetector 3 be axle center horizontal rotation 180 with the second rotary shaft 6
Degree scope.
Test process example：
(1) adjustment microscope carrier 5 is horizontal, that is, keep the horizontal light extraction of semiconductor laser to be measured 2；Second is driven to rotate
Axle rotation 6, L-type arm 7 drives (slow-axis direction) rotation 180 degree in the horizontal direction of photodetector 3, detects the intensity of slow-axis direction
Distribution.
Rotary course can be from 0 degree of scanning to 180 degree, or the light extraction orientation with semiconductor laser to be measured 2
As the initial position of L-type arm, 90 degree, then return are rotated forward, negative sense is rotated by 90 °.
(2) keep the light extraction orientation of L-type arm 7 and semiconductor laser just to (initial position of i.e. above-mentioned L-type arm), drive
First rotary shaft rotation 4, microscope carrier 5 drives semiconductor laser to be measured 3 towards photodetector 3 at vertical direction (quick shaft direction)
180 degree is rotated, the intensity distribution of quick shaft direction is detected.
Claims (7)
1. the far field intensity test device of semiconductor light source is used for, it is characterised in that：Including base, semiconductor light source to be measured, light
Probe, wobble component and rotary components and corresponding motor, wherein wobble component and rotary components are fixedly installed in
On the base；
The wobble component includes relatively-stationary first rotary shaft and microscope carrier, and semiconductor light source to be measured is fixed on microscope carrier, treats
The light extraction optical axis for surveying semiconductor light source is vertical with the axial line of the first rotary shaft, and the first rotary shaft of driving can drive the microscope carrier to make to treat
Survey semiconductor light source and 180 degree scope is swung in perpendicular；
The rotary components include relatively-stationary second rotary shaft and turnover arm, and the second rotary shaft is located at semiconductor light source to be measured
Near-end, light probe be fixed on turnover arm on and positioned at semiconductor light source to be measured distal end, the setting height(from bottom) of light probe with it is to be measured
Light path position during semiconductor light source horizontality is suitable；The axial line of the second rotary shaft is located at semiconductor light source light extraction to be measured
In swinging plane；Drive the second rotary shaft can drive turnover arm make light probe with the second rotary shaft be axle center horizontally rotate 180
Degree scope.
2. the far field intensity test device for semiconductor light source according to claim 1, it is characterised in that：The base
On be provided with a fixed plate for protruding horizontally up, second rotary shaft is vertically fixed by socket in the fixed plate.
3. the far field intensity test device for semiconductor light source according to claim 2, it is characterised in that：Described solid
Mounting bracket is provided with above fixed board, mounting bracket is directly fixed with the fixed plate or the base；Mounting bracket has
Two vertical supporting plates, first rotary shaft is vertically socketed on two supporting plates, and microscope carrier is located at two inner sides of supporting plate.
4. according to any described far field intensity test device for semiconductor light source of claims 1 to 3, it is characterised in that：
The turnover arm is L-type arm, the two ends in the portion long of L-type arm respectively with the second rotary shaft, short portion's vertical connection of L-type arm, light visits
Head is installed in the short portion.
5. according to any described far field intensity test device for semiconductor light source of claims 1 to 3, it is characterised in that：
Semiconductor light source to be measured is installed on front end face or the upper surface of microscope carrier.
6. the far field intensity test device for semiconductor light source according to claim 5, it is characterised in that：The microscope carrier
With straight table top, semiconductor light source to be measured is parallel to be fixed on table top.
7. the method that semiconductor light source far field intensity is measured is realized using test device described in claim 1, comprised the following steps：
(1) adjustment microscope carrier is horizontal, that is, keep the horizontal light extraction of semiconductor light source to be measured；The second rotary shaft is driven to rotate,
Turnover arm drives photodetector to rotate 180 degree in the horizontal direction, obtains the intensity distribution of slow-axis direction；
(2) keep turnover arm just right with the light extraction orientation of semiconductor light source, drive the rotation of the first rotary shaft, microscope carrier drives to be measured half
Conductor light source rotates 180 degree towards photodetector in vertical direction, obtains the intensity distribution of quick shaft direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410808513.5A CN104515595B (en) | 2014-12-20 | 2014-12-20 | Testing device for far field intensity of semiconductor light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410808513.5A CN104515595B (en) | 2014-12-20 | 2014-12-20 | Testing device for far field intensity of semiconductor light source |
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| CN104515595A CN104515595A (en) | 2015-04-15 |
| CN104515595B true CN104515595B (en) | 2017-05-24 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106596072A (en) * | 2016-12-27 | 2017-04-26 | 东莞勤上光电股份有限公司 | LED light source flickering detector |
| CN108534994B (en) * | 2018-03-23 | 2024-04-05 | 中国科学院西安光学精密机械研究所 | Device and method for testing uniformity of large-caliber uniform light source |
| CN108760240B (en) * | 2018-06-27 | 2024-04-09 | 上海合参智能医疗科技有限公司 | Detection method and device for uniformity of illumination of acquisition light path of traditional Chinese medicine inspection instrument |
| CN109443699A (en) * | 2018-11-16 | 2019-03-08 | 苏州伊欧陆系统集成有限公司 | A kind of edge-emitting laser slide glass test fiber-optical coupled cramping apparatus system |
| CN110658501B (en) * | 2019-10-08 | 2021-10-15 | 厦门金龙联合汽车工业有限公司 | Radar range measuring system and method |
| CN114337807B (en) * | 2020-12-28 | 2024-03-01 | 苏州联讯仪器股份有限公司 | Multi-temperature test system of optical communication module |
| CN112909726A (en) * | 2021-01-20 | 2021-06-04 | 苏州长光华芯光电技术股份有限公司 | Multifunctional testing device for laser chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS58173438A (en) * | 1982-04-06 | 1983-10-12 | Mitsubishi Electric Corp | Measuring device for far field pattern of light emitting element |
| CN101929889A (en) * | 2010-05-17 | 2010-12-29 | 西安炬光科技有限公司 | Semiconductor laser remote field testing method and device |
| CN202188902U (en) * | 2011-08-25 | 2012-04-11 | 杭州远方光电信息股份有限公司 | Nearfield distribution photometer |
| JP6076039B2 (en) * | 2012-10-30 | 2017-02-08 | 株式会社日立製作所 | Apparatus and method for diagnosing sliding state of rotating electrical machine |
| CN204514470U (en) * | 2014-12-20 | 2015-07-29 | 西安炬光科技有限公司 | For the far field intensity proving installation of semiconductor light sources |
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Address after: 710077 Shaanxi High Power Semiconductor Laser Industrial Park, No. 56 Zhang 86 Road, Xi'an High-tech Zone, Shaanxi Province Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710077 Shaanxi High Power Semiconductor Laser Industrial Park, No. 56 Zhang 86 Road, Xi'an High-tech Zone, Shaanxi Province Patentee before: Xi'an Focuslight Technology Co., Ltd. |
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