CN204346582U - A kind of fast characterizing device of the three-dimensional far field intensity for semiconductor light sources - Google Patents
A kind of fast characterizing device of the three-dimensional far field intensity for semiconductor light sources Download PDFInfo
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- CN204346582U CN204346582U CN201420821016.4U CN201420821016U CN204346582U CN 204346582 U CN204346582 U CN 204346582U CN 201420821016 U CN201420821016 U CN 201420821016U CN 204346582 U CN204346582 U CN 204346582U
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- semi arch
- far field
- drive division
- semiconductor light
- light sources
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Abstract
The utility model provides a kind of fast characterizing device of the three-dimensional far field intensity for semiconductor light sources, can probing semiconductor light source real far field three-dimensional intensity distribution.This fast characterizing device mainly comprises photodetector, fixed support, wobble component and drive motor thereof, and described wobble component comprises the swing part and drive division that are fixedly connected with, and drive division is installed on fixed support; The main body of described swing part is semi arch, semi arch has been evenly arranged multiple light guide member and has collected bunchy to be connected to described photodetector, and semi arch can with the two end point connecting line of described semi arch for axle revolves turnback towards light source to be measured.The utility model structure is simple and clear, and reliability is high, there is not mutual interference between pivot arm, can complete the real space three-dimensional distribution of semiconductor laser radiation intensity fast and characterize.
Description
Technical field
The utility model belongs to semiconductor light sources technical field of measurement and test, relates to a kind of characterization apparatus of the far field dimensional strength for semiconductor light sources, the light intensity distributions that measuring semiconductor light source changes with angle at far field place.
Background technology
Semiconductor light sources mainly comprises semiconductor laser light resource and LED light source.
High-power semiconductor laser has the advantages such as volume is little, lightweight, efficiency is high, the life-span is long, be widely used in Laser Processing, laser medicine, laser display and field of scientific study, become the comprehensive new and high technology that new century development is fast, achievement is many, Subject identity is wide, range of application is large.The far-field characteristic of semiconductor laser not only has importance in the homogeneity evaluating the long propagation of laser beam; May be used for analyzing semiconductor laser instrument internal failure mechanism, for development high-performance semiconductor laser instrument provides foundation simultaneously; Also be design passing through a collimating system, providing accurate angle of divergence data, is the important evidence improving optical fibre optical fibre coupling efficiency further.For this reason, accurately characterize semiconductor laser remote field characteristic rapidly and seem particularly important.
The current measuring semiconductor laser remote field angle of divergence adopts dual-axis rotation spacescan method usually.Dual-axis rotation spacescan method (application publication number: CN101825517A; CN101929889A) adopting with semiconductor laser is the center of circle, and two scan arms are radius, and two-arm places detector, respectively the fast axle of probing semiconductor laser instrument and the far field space intensity distributions of slow-axis direction.The method truly can reflect the spatial intensity distribution of semiconductor laser, but semiconductor laser must with detector in same scanning plane, very easily there is semiconductor laser slant setting slightly in use procedure, therefore can produce larger strength test deviation in far field place test intensity; The method can only characterize the far-field distribution in fast and slow axis both direction simultaneously, hot spot cannot be provided in the overall intensity distribution in space, limit the analysis (generation as multimode) of noise spectra of semiconductor lasers internal optics performance.For making up above-mentioned shortcoming, a kind of three-dimensional far field space scan method based on space angle measurement technique can obtain far field place three-dimensional intensity distribution (patent No.: US5949534).This three-dimensional far field space characterizing method adopts change mirror angle and rotary detector to combine, and realizes the detection of dimensional strength.Because the rotation center of catoptron and detector and semiconductor laser do not overlap, there is the defect of eccentric detection, although can be compensated by theory calculate, still belong to indirect detection, and there is deviation in actual strength distribution.
And for LED light source, the detection of current LED light source space distribution mainly adopts half circular sweep method (Chinese patent application 200810027632.1), in the method, photodetector is positioned on semicircle, just can be gathered the space distribution of LED light source by rotating semicircular ring.The LED intensity detector placed in the method is subject to own vol restriction, and Space Angle resolution is low, and the details caused in detected intensity distributions can not be differentiated fully.
Utility model content
The utility model provides a kind of fast characterizing device of the three-dimensional far field intensity for semiconductor light sources, can probing semiconductor light source real far field three-dimensional intensity distribution.
The purpose of this utility model is achieved through the following technical solutions:
A kind of fast characterizing device of the three-dimensional far field intensity for semiconductor light sources, its special character is: comprise photodetector, fixed support, wobble component and drive motor thereof, described wobble component comprises the swing part and drive division that are fixedly connected with, and drive division is installed on fixed support; The main body of described swing part is semi arch, semi arch has been evenly arranged multiple light guide member and has collected bunchy to be connected to described photodetector, and semi arch can with the two end point connecting line of described semi arch for axle revolves turnback towards light source to be measured.
Based on such scheme, optimization further also can be done as follows:
Light guide member adopts optical patchcord or photoconductive tube.
Photodetector and fixed support are fixed on same base.
Also directly can be evenly arranged multiple photodetector on semi arch, save light guide member.
Drive division is linear pattern, and drive division is coaxially installed with electric rotating machine.Best concrete structure is:
The rotational axis line of drive division is crossing with swing part has two intersection points to be designated as B, C, intersection points B and intersection point C are as two ends of swing part, form extension along described rotational axis line respectively, fixed support has two sway braces, is correspondingly socketed installation two extensions; One of them extension is namely as described drive division, and electric rotating machine is positioned at the outside of sway brace.
The utility model has the following advantages:
(1) characterization apparatus of the far field dimensional strength of semiconductor light sources of the present utility model may be used for the far field intensity of measuring semiconductor LASER Light Source, LED light source.
(2) structure is simple and clear, and reliability is high, there is not mutual interference between pivot arm.
(3) the real space three-dimensional distribution of semiconductor laser radiation intensity can be realized characterize.
(4), when the fast characterizing device of the three-dimensional far field intensity for semiconductor light sources of the present utility model is used for measuring semiconductor laser remote field intensity, the measurement update that traditional scheme semiconductor laser and detector cause due to center deviation of the alignment is eliminated.
(5) the fast characterizing device of the three-dimensional far field intensity for semiconductor light sources of the present utility model is fast for measuring semiconductor light source far field three-dimensional intensity distribution sign speed.
Accompanying drawing explanation
Fig. 1 is the structural representation (light guide member collects bunchy and is connected to photodetector) of the utility model embodiment one.
Fig. 2 is the structural representation (directly arranging photodetector on semi arch) of the utility model embodiment two.
Drawing reference numeral illustrates:
1 is photodetector; 2 is fixed support; 3 is wobble component; 4 is drive motor; 5 is drive division; 6 is swing part; 7 is light guide member; 8 is hub or converter; 9 is sway brace; 10 is light hole; 11 is base.
Embodiment
As shown in Figure 1, the fast characterizing device of the three-dimensional far field intensity for semiconductor light sources of the present utility model, comprise photodetector 1, fixed support 2, wobble component 3 and drive motor 4 thereof, wherein wobble component 3 comprises the swing part 4 and drive division 5 that are fixedly connected with, and drive division 5 is installed on fixed support 2; The main body of swing part 6 is semi arch, semi arch has been evenly arranged multiple light guide member 7 and has collected bunchy at rear, semi arch back and be connected to described photodetector 1, semi arch can with the two end point connecting line of described semi arch for axle revolves turnback towards light source to be measured.
In addition, also with hub 8 many light guide members 7 can be collected and then undertaken detecting the laser intensity transmitted from light guide member 7 by photodetector 1.
Described drive division 5 is linear pattern, and drive division 5 is coaxially installed with electric rotating machine.
The rotational axis line of drive division 5 is crossing with swing part 6 has two intersection points to be designated as B, C, intersection points B and intersection point C are as two ends of swing part 6, form extension along described rotational axis line respectively, fixed support 2 has two sway braces 9, is correspondingly socketed installation two extensions; One of them extension is namely as described drive division 5, and drive motor 4 is positioned at the outside of sway brace 9.
Described light guide member 7 adopts optical patchcord, and many light guide members 7 form fiber array.
Or described light guide member 7 adopts photoconductive tube, many light guide members 7 form photoconductive tube array.
Photodetector 1 and fixed support 2 are fixed on same base 11, or use hub 8 or converter to be collected by many light guide members 7 then to be undertaken detecting the laser intensity transmitted from light guide member 7 by photodetector 1, such photodetector 1 can be arranged on optional position.
In the present embodiment, the fast characterizing device that this can be used for the three-dimensional far field intensity of semiconductor light sources is encapsulated in encapsulating housing, light hole 10 can be designed, the light that light source to be measured sends is incident from light hole 10, semi arch can with the two end point connecting line of described semi arch for axle revolves turnback towards light source to be measured, and namely the track of semi arch meets 180 degree of scannings to light hole bright dipping.
To semiconductor light source space Light distribation, be the center of circle with semiconductor light sources, semi arch is arranged in sequence with multiple optical fiber, the laser intensity of every root fiber-optic probe corresponding position; Angularly interval rotates this semi arch, obtains the spatial-intensity value under special angle; Semi arch scans after 180 °, just can obtain the far field space intensity distributions of semiconductor laser.
Fast characterizing device is adopted to realize the method for far field dimensional strength Quick Measurement, by driving swing part 6, make as shown in Figure 1 all light guide members 7 towards light source to be measured with the two end point connecting line of described semi arch for axle revolves turnback, use photodetector 1 to detect the laser intensity transmitted from light guide member 7, namely obtain three-dimensional far field space intensity distributions.
If Fig. 2 is another embodiment of the present utility model, the fast characterizing device of the three-dimensional far field intensity for semiconductor light sources of the present utility model also can be, comprise photodetector 1, fixed support 2, wobble component 3 and drive motor 4 thereof, described wobble component 3 comprises the swing part 6 and drive division 5 that are fixedly connected with, and drive division 5 is installed on fixed support 2; The main body of described swing part 6 is semi arch, semi arch has been evenly arranged multiple photodetector 1, and semi arch is towards can with the two end point connecting line of described semi arch for axle revolves turnback to light source to be measured.
Described drive division 5 is linear pattern, and drive division 5 is coaxially installed with electric rotating machine.
The rotational axis line of drive division 5 is crossing with swing part 6 has two intersection points to be designated as B, C, intersection points B and intersection point C are as two ends of swing part 6, form extension along described rotational axis line respectively, fixed support 2 has two sway braces 9, is correspondingly socketed installation two extensions; One of them extension is namely as described drive division 5, and drive motor 4 is positioned at the outside of sway brace.
For semiconductor light sources spatial light distribution, be the center of circle with semiconductor light sources, semi arch is arranged in sequence with photodetector (corresponding to the detection site of setting), the laser intensity of each photodetector detection corresponding position; Angularly interval rotates this semi arch, obtains the spatial-intensity value under special angle; Semi arch scans after 180 °, just can obtain the far field space intensity distributions of semiconductor laser.Fast characterizing device is adopted to realize the method for far field dimensional strength Quick Measurement as shown in Figure 2, by driving swing part 6, make all photodetectors 1 towards light source to be measured with the two end point connecting line of described semi arch for axle revolves turnback, use photodetector 1 to detect the laser intensity transmitted from light guide member 7, namely obtain three-dimensional far field space intensity distributions.
Claims (6)
1. the fast characterizing device for the three-dimensional far field intensity of semiconductor light sources, it is characterized in that: comprise photodetector, fixed support, wobble component and drive motor thereof, described wobble component comprises the swing part and drive division that are fixedly connected with, and drive division is installed on fixed support; The main body of described swing part is semi arch, semi arch has been evenly arranged multiple light guide member and has collected bunchy to be connected to described photodetector, and semi arch can with the two end point connecting line of described semi arch for axle revolves turnback towards light source to be measured.
2. the fast characterizing device of the three-dimensional far field intensity for semiconductor light sources according to claim 1, is characterized in that: described light guide member adopts optical patchcord or photoconductive tube.
3. the fast characterizing device of the three-dimensional far field intensity for semiconductor light sources according to claim 1, is characterized in that: photodetector and fixed support are fixed on same base.
4. the fast characterizing device for the three-dimensional far field intensity of semiconductor light sources, it is characterized in that: comprise fixed support, wobble component and drive motor thereof, described wobble component comprises the swing part and drive division that are fixedly connected with, and drive division is installed on fixed support; The main body of described swing part is semi arch, semi arch has been evenly arranged multiple photodetector, and semi arch can with the two end point connecting line of described semi arch for axle revolves turnback towards light source to be measured.
5., according to the fast characterizing device of the arbitrary described three-dimensional far field intensity for semiconductor light sources of Claims 1-4, it is characterized in that: described drive division is linear pattern, and drive division is coaxially installed with electric rotating machine.
6. the fast characterizing device of the three-dimensional far field intensity for semiconductor light sources according to claim 5, it is characterized in that: the rotational axis line of drive division is crossing with swing part has two intersection points to be designated as B, C, intersection points B and intersection point C are as two ends of swing part, extension is formed respectively along described rotational axis line, fixed support has two sway braces, is correspondingly socketed installation two extensions; One of them extension is namely as described drive division, and electric rotating machine is positioned at the outside of sway brace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420821016.4U CN204346582U (en) | 2014-12-20 | 2014-12-20 | A kind of fast characterizing device of the three-dimensional far field intensity for semiconductor light sources |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420821016.4U CN204346582U (en) | 2014-12-20 | 2014-12-20 | A kind of fast characterizing device of the three-dimensional far field intensity for semiconductor light sources |
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| CN204346582U true CN204346582U (en) | 2015-05-20 |
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| CN201420821016.4U Withdrawn - After Issue CN204346582U (en) | 2014-12-20 | 2014-12-20 | A kind of fast characterizing device of the three-dimensional far field intensity for semiconductor light sources |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104515592A (en) * | 2014-12-20 | 2015-04-15 | 西安炬光科技有限公司 | Rapid characterization device for three-dimensional far field intensity of semi-conductor light source |
| CN111795806A (en) * | 2020-06-30 | 2020-10-20 | 雄芯光电科技有限责任公司 | Laser divergence angle measuring system and measuring method |
-
2014
- 2014-12-20 CN CN201420821016.4U patent/CN204346582U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104515592A (en) * | 2014-12-20 | 2015-04-15 | 西安炬光科技有限公司 | Rapid characterization device for three-dimensional far field intensity of semi-conductor light source |
| CN111795806A (en) * | 2020-06-30 | 2020-10-20 | 雄芯光电科技有限责任公司 | Laser divergence angle measuring system and measuring method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 710077 Xi'an province hi tech Zone, Shaanxi Zhang Road No. 86, No. 56 Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710077 high power semiconductor laser Industrial Park, Shaanxi, Xi'an, Shaanxi Province, No. 86, No. 56 Patentee before: Xi'an Focuslight Technology Co., Ltd. |
|
| CP03 | Change of name, title or address | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150520 Effective date of abandoning: 20170714 |
|
| AV01 | Patent right actively abandoned |