CN103489963B - The tracking of silicon chip of solar cell - Google Patents
The tracking of silicon chip of solar cell Download PDFInfo
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- CN103489963B CN103489963B CN201310470559.6A CN201310470559A CN103489963B CN 103489963 B CN103489963 B CN 103489963B CN 201310470559 A CN201310470559 A CN 201310470559A CN 103489963 B CN103489963 B CN 103489963B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 103
- 239000010703 silicon Substances 0.000 title claims abstract description 103
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 45
- 239000012535 impurity Substances 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- 239000013078 crystal Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003908 quality control method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of tracking of silicon chip of solar cell, comprise the steps: to adopt laser grooving and scribing mode to slot on the described selected cut surface of described crystalline silicon workpiece, form multiple score line of a series of different in width and spacing, and described multiple score line is encoded, to form coding pattern for marking trace information, wherein with at least one in the live width of described score line, the degree of depth and spacing for coded object.The tracking of above-mentioned silicon chip of solar cell can follow the tracks of crystal silicon solar energy battery silicon chip, and technique is simple, cost is lower.
Description
[technical field]
The invention belongs to technical field of solar cells, be specifically related to a kind of method adopting laser grooving and scribing to realize the tracking of crystal silicon solar energy battery silicon chip.
[background technology]
Since entering this century, solar photovoltaic industry becomes one of fastest-rising industry in the world, in all kinds of solar cell, crystal silicon solar energy battery in occupation of nearly 80% the market share.Crystal silicon solar energy battery utilizes the photovoltaic effect of p-n junction to realize opto-electronic conversion, and the sunlight absorbed is converted to electric energy, and is load supplying.The p-n junction structure mainly formed in solar cell preparation process played a key effect in solar cells, there is the semi-conducting material of certain energy gap after the radiation receiving sunlight, the photon that energy exceedes semiconductor energy gap can excite generation electron hole pair in semiconductor bulk, the electron hole pair produced is separated by the internal electric field of p-n junction, producing photogenerated current and photo-induced voltage, is load supplying by external circuit.
The restraining factors that current restriction photovoltaic industry continues to develop are exactly cost and the conversion efficiency of solar cell.High high cost and relative poor efficiency are the bottlenecks that restriction industry continues development.One of them key constraints is that the silicon chip used in traditional crystal-silicon solar cell production process is all often adopt the silicon chip from different manufacturers different productive year different resistivity, often be difficult in process of production screen one by one select, this causes very large difficulty for experimental study and large batch of production classification, how reasonably classifying and recognition and tracking to the silicon chip information of producing, this becomes the problem that each large cell production companies and scientific research institutions are studied always.
Tracking for silicon chip information can well embody the flow process of whole production chain, comprise the selection of silicon material, the mode of ingot casting or crystal pulling, silicon chip impurity concentration etc., the on-line tracing of silicon chip also can produce good directive function for follow-up battery manufacture simultaneously, comprise the optimization of experiment, the coupling etc. of industrialization.Research about this one side yet there are no Patents report.
[summary of the invention]
In view of above-mentioned condition, be necessary to provide a kind of tracking can following the tracks of silicon solar cell silicon chip, simple, the lower-cost silicon chip of solar cell of technique.
A tracking for silicon chip of solar cell, comprises the steps:
Laser grooving and scribing mode is adopted to slot on the described selected cut surface of described crystalline silicon workpiece, form multiple score line of a series of different in width and spacing, and described multiple score line is encoded, to form coding pattern for marking trace information, wherein with at least one in the live width of described score line, the degree of depth and spacing for coded object.
Wherein in an embodiment, described crystalline silicon workpiece is monocrystalline silicon silicon rod, polysilicon silicon ingot or mono-like silicon ingot;
Or described trace information comprises the manufacturer of silicon chip, productive year, particular location, size and the resistivity in described crystalline silicon workpiece, at least one in impurity concentration.
Wherein in an embodiment, the power of the laser adopted is 10 ~ 100W, wavelength is 250 ~ 1064nm, laser pulse frequency is 1kHz ~ 300kHz, sweep speed is 10 ~ 1000mm/s, pumping current is 10 ~ 50A, and delineation number of times is pulse or the continuous laser of 1 ~ 100 time, the described selected cut surface hot spot reaching micron dimension diameter being irradiated to described crystalline silicon workpiece carries out intensive scanning slot after focusing on.
Wherein in an embodiment, the live width of described score line is 100 ~ 300 μm, and the degree of depth is 10 ~ 100 μm, and spacing is 0.5 ~ 5mm.
Wherein in an embodiment, the degree of depth of described multiple score line is all identical, and spacing changes along with line width variation, and represents different encoding value with the described score line of different live width.
Wherein in an embodiment, live width is the score line presentation code " 0 " of 100 μm, live width is the score line presentation code " 1 " of 120 μm, live width is the score line presentation code " 2 " of 140 μm, live width is the score line presentation code " 3 " of 160 μm, live width is the score line presentation code " 4 " of 180 μm, live width is the score line presentation code " 5 " of 200 μm, live width is the score line presentation code " 6 " of 220 μm, live width is the score line presentation code " 7 " of 240 μm, live width is the score line presentation code " 8 " of 260 μm, live width is the score line presentation code " 9 " of 280 μm.
Wherein in an embodiment, described coding pattern comprises coding site and check position, described check position is positioned at the center position area of described coding site, the coded message of described coding site comprises the coded message of position of silicon wafer, the coded message of described position of silicon wafer is made up of an inclination score line apart from described check position fixed range, and the fixed range according to described inclination score line and check position can judge that described silicon chip is arranged in the positional information of described crystalline silicon workpiece.
Wherein in an embodiment, described coding pattern also comprises original position and final position, described original position and final position are symmetrically distributed about described check position respectively, and the score line mode of described original position, final position and check position is the score line of closing on two 100-300 μm of live widths.
Wherein in an embodiment, the coded message of described coding site also comprises the coded message of crystalline silicon workpiece, the coded message of described crystalline silicon workpiece is positioned at described check position side, the coded message of described position of silicon wafer is positioned at described check position opposite side, and the score line mode of the coded message of described crystalline silicon workpiece is close on 3 score line arranged side by side.
Wherein in an embodiment, the coded message of described crystalline silicon workpiece is made up of the equally spaced score line group of four row, and each score line group comprises 3 score line; The coded message of described coding site included the grouping information in one group of same described crystalline silicon workpiece before described final position, was made up of 3 score line, and numbering increases progressively from top to bottom successively.
Wherein in an embodiment, also comprise the steps:
Described crystalline silicon workpiece after cross-notching cleans, wipe oil impurity and lbg damage;
Silicon chip cutting is carried out to described crystalline silicon workpiece, completes section work;
The silicon chip that section terminates is cleaned, removes damage and greasy dirt verify laser grooving and scribing line following effect.
Wherein in an embodiment, the cleaning agent of wipe oil and laser damage is sodium hydroxide solution, and mass percentage is 5-15%, temperature 25 DEG C, or is tetramethyl ammonium hydroxide solution, solution quality percentage composition 5-20%, temperature 25 DEG C.
The tracking of above-mentioned silicon chip of solar cell at least has the following advantages:
(1) by adopting the mode of laser incising line to slot on the cut surface of silicon chip of solar cell, forming the score line of codified, thus realizing the tracking of silicon chip of solar cell, be convenient to the control of production in enormous quantities and the yields of running an enterprise on a commercial.
(2) adopt the mode of laser incising line to realize a silicon chip to follow the tracks of, technique is simple, is easy to be integrated in industrialization production, when not increasing extra cost, can realize by increasing a laser.
(3) adopt the mode of laser incising line to realize the tracking of silicon ingot (or silicon rod) and silicon chip information, there is good reference function, for research work provides a good reference for the quality control of follow-up silicon material and R&D and production.
(4) adopt laser incising hatched manner to realize the tracking of silicon ingot (or silicon rod) and silicon chip information, the mismatch phenomenon that later stage assembly produces because of the reason of solar cell can well be avoided.
[accompanying drawing explanation]
Fig. 1 is the schematic diagram of the coding pattern of silicon ingot;
Fig. 2 is the enlarged diagram of the silicon ingot coded message of coding pattern;
Fig. 3 is the generalized section of coding pattern.
[embodiment]
For the ease of understanding the present invention, below with reference to relevant drawings, the present invention is described more fully.Preferred embodiment of the present invention is given in accompanying drawing.But the present invention can realize in many different forms, is not limited to embodiment described herein.On the contrary, provide the object of these embodiments be make the understanding of disclosure of the present invention more comprehensively thorough.
It should be noted that, when element is called as " being fixed on " another element, directly can there is element placed in the middle in it on another element or also.When an element is considered to " connection " another element, it can be directly connected to another element or may there is centering elements simultaneously.Term as used herein " vertical ", " level ", "left", "right" and similar statement are just for illustrative purposes.
Unless otherwise defined, all technology used herein and scientific terminology are identical with belonging to the implication that those skilled in the art of the present invention understand usually.The object of term used in the description of the invention herein just in order to describe specific embodiment, is not intended to be restriction the present invention.Term as used herein " and/or " comprise arbitrary and all combinations of one or more relevant Listed Items.
The tracking of the silicon chip of solar cell of embodiment of the present invention, adopt the mode of lbg on the crystalline silicon workpiece of crystal-silicon solar cell, depict the channel-shaped structure at a series of different in width and interval, the follow-up channel-shaped structure for delineation carries out code identification, just can identify the specifying information such as particular location, size, resistivity in the manufacturer of silicon chip, productive year, silicon ingot and silicon rod according to laser grooving and scribing patterns (that is, coding pattern) different on silicon chip after the section of crystalline silicon workpiece terminates.This tracking comprises step (a) ~ (e):
A () chooses the crystalline silicon workpiece drawn, and after preliminary treatment crystalline silicon workpiece, selected cut surface.
This pretreated technique comprises carries out deckle to crystalline silicon workpiece and cleans the surface of crystalline silicon workpiece.Deckle is carried out to crystalline silicon workpiece, so that determine cut lengths and the cutting profile of crystalline silicon workpiece.The surface of crystalline silicon workpiece is cleaned, to avoid the pollutant of crystalline silicon surface of the work, post laser fluting is impacted.
This crystalline silicon workpiece comprises monocrystalline silicon silicon rod, polysilicon silicon ingot and the mono-like silicon ingot etc. that industry generally adopts.Described selected silicon chip cut surface should be positioned at same direction with the post laser face of delineating.
The trace information of silicon chip of solar cell comprises the manufacturer of silicon chip, productive year, particular location, size and the resistivity in crystalline silicon workpiece, at least one in impurity concentration.
B () adopts laser grooving and scribing mode to slot on the selected cut surface of crystalline silicon workpiece, form multiple score line of a series of different in width and spacing, and multiple score line is encoded, to form coding pattern for marking trace information, wherein with at least one in the live width of score line, the degree of depth and spacing for coded object.
In a preferred embodiment, the power of the laser adopted is 10 ~ 100W, wavelength is 250 ~ 1064nm, laser pulse frequency is 1kHz ~ 300kHz, sweep speed is 10 ~ 1000mm/s, pumping current is 10 ~ 50A, and delineation number of times is pulse or the continuous laser of 1 ~ 100 time, the selected cut surface hot spot reaching micron dimension diameter being irradiated to crystalline silicon workpiece carries out intensive scanning slot after focusing on.
Wherein, the live width of score line can be 100 ~ 300 μm, and the degree of depth can be 10 ~ 100 μm, and spacing can be 0.5 ~ 5mm, so that adopt laser to slot when efficiency is higher.
Can be multiple to the coded system of above-mentioned score line, such as, the different live widths of score line can be adopted to represent different encoded radios, the encoded radio that the different spacing of score line represents different can be adopted, also can adopt the numerical value that the different depth of score line represents different, or both adopting, the combination of three.
In the present embodiment, in order to improve the efficiency of employing lbg and identify convenient, the different live widths of score line are adopted to represent different encoded radios.That is, in step (b), the degree of depth of multiple score line is all identical, and spacing changes along with line width variation, and in other words, groove depth should be consistent, the interval grade according to cutting width of cutting interval and different.Further, different encoding value is represented with the score line of different live width, such as table one.
Table one
In other words, live width is the score line presentation code " 0 " of 100 μm; Live width is the score line presentation code " 1 " of 120 μm; Live width is the score line presentation code " 2 " of 140 μm; Live width is the score line presentation code " 3 " of 160 μm; Live width is the score line presentation code " 4 " of 180 μm; Live width is the score line presentation code " 5 " of 200 μm; Live width is the score line presentation code " 6 " of 220 μm; Live width is the score line presentation code " 7 " of 240 μm; Live width is the score line presentation code " 8 " of 260 μm; Live width is the score line presentation code " 9 " of 280 μm.
Further, coding pattern comprises original position, coding site, check position and final position, and check position is positioned at the center position area of coding site, and original position and final position are symmetrically distributed about check position respectively.Such as, the score line mode of original position, final position and check position is the score line of closing on two 100-300 μm of live widths.
Further, the coded message of coding site comprises the coded message of the crystalline silicon workpiece being positioned at check position side and is positioned at the coded message of position of silicon wafer of check position opposite side.The score line mode of the coded message of crystalline silicon workpiece is close on 3 score line arranged side by side.Such as, the coded message of crystalline silicon workpiece is made up of the equally spaced score line group of four row, and each score line group comprises 3 score line.
The coded message of position of silicon wafer is made up of an inclination score line of Distance test position fixed range, and the fixed range according to described inclination score line and check position can judge that described silicon chip is arranged in the positional information of described crystalline silicon workpiece.Preferably, inclination score line tilts 10 ~ 50 degree compared to the score line of the coded message of crystalline silicon workpiece, and fixed range is 1 ~ 10mm, and live width is 100-300 μm;
Meanwhile, the coded message of coding site included the grouping information in one group of same crystalline silicon workpiece before final position, was made up of 3 score line, and numbering increases progressively from top to bottom successively.
Below illustrate above-mentioned coded system, Fig. 1 is the schematic diagram of the coding pattern of silicon ingot, and Fig. 2 is the enlarged diagram of silicon ingot coded message, and Fig. 3 is the generalized section of coding pattern.
Refer to Fig. 1 to Fig. 3, the coding pattern of silicon ingot 7 comprises original position 1, the coded message 2 of silicon ingot, the coded message 4 of silicon chip, grouping information 5 in same silicon ingot, check position 3 and final position 6, check position 3 is positioned at the center position area of coding site (coded message 2 of silicon ingot and the coded message 4 of position of silicon wafer), and original position 1 and final position 6 are symmetrically distributed about check position 3 respectively.
The coded message 2 of silicon ingot comprises four groups of equally spaced laser scoring groups 200,201,202,203, often organize groove group 200,201,202,203 and comprise 3 score line, the width then corresponding different coded digital of score line, often organize the information that the coded digital of 3 score line compositions of score line group is corresponding different, can be manufacturer, productive year, silicon ingot resistivity, comprise the information such as impurity concentration, size dimension, sample type.Such as, groove group 200 marks silicon ingot manufacturer coded message; Groove group 201 marks silicon ingot productive year coded message; Groove group 202 marks silicon ingot size and type coding information; Groove group 203 marks silicon ingot impurity concentration coded message.
The coded message 4 of position of silicon wafer comprises and being made up of the inclined line segment of a Distance test position fixed range, and the angle of itself and horizontal direction is-30 ~-80 to spend, and its width is at 100 ~ 300 μm, and the degree of depth is 10 ~ 100 μm.Follow-uply can judge that cut silicon chip is arranged in the positional information of silicon ingot according to the fixed range of inclination score line and check position after multi-wire saw.
The coded message of original position 1, check position 3, final position 6 is by 2 laser incising line compositions, and live width is between 100 ~ 300 μm, and the degree of depth is between 10 ~ 100 μm.
C the crystalline silicon workpiece after () cross-notching cleans, wipe oil impurity and lbg damage.
Such as, in step (c), the cleaning agent of wipe oil and laser damage is sodium hydroxide solution, and mass percentage is 5-15%, temperature 25 DEG C, or is tetramethyl ammonium hydroxide solution, solution quality percentage composition 5-20%, temperature 25 DEG C.
D () carries out silicon chip cutting to crystalline silicon workpiece, complete section work.
In step (d), the described chopper and slicer multi-wire saw equipment that generally can adopt for crystal silicon solar industry.
E () cleans silicon chip that section terminates, remove damage and greasy dirt verify laser grooving and scribing line following effect.
In process step (e), the described cleaning process that section cleaning is generally adopted for industry.The multi-wire saw equipment that chopper and slicer generally can adopt for crystal silicon solar industry.
The tracking of above-mentioned silicon chip of solar cell at least has the following advantages:
(1) by adopting the mode of laser incising line to slot on the cut surface of silicon chip of solar cell, forming the score line of codified, thus realizing the tracking of silicon chip of solar cell, be convenient to the control of production in enormous quantities and the yields of running an enterprise on a commercial.
(2) adopt the mode of laser incising line to realize a silicon chip to follow the tracks of, technique is simple, is easy to be integrated in industrialization production, when not increasing extra cost, can realize by increasing a laser.
(3) adopt the mode of laser incising line to realize the tracking of silicon ingot (or silicon rod) and silicon chip information, there is good reference function, for research work provides a good reference for the quality control of follow-up silicon material and R&D and production.
(4) adopt laser incising hatched manner to realize the tracking of silicon ingot (or silicon rod) and silicon chip information, the mismatch phenomenon that later stage assembly produces because of the reason of solar cell can well be avoided.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (9)
1. a tracking for silicon chip of solar cell, is characterized in that, comprises the steps:
Laser grooving and scribing mode is adopted to slot on the selected cut surface of crystalline silicon workpiece, form multiple score line of a series of different in width and spacing, and described multiple score line is encoded, to form coding pattern for marking trace information, wherein with at least one in the live width of described score line, the degree of depth and spacing for coded object;
Described coding pattern comprises coding site and check position, described check position is positioned at the center position area of described coding site, the coded message of described coding site comprises the coded message of position of silicon wafer, the coded message of described position of silicon wafer is made up of an inclination score line apart from described check position fixed range, and the fixed range according to described inclination score line and check position can judge that described silicon chip is arranged in the positional information of described crystalline silicon workpiece.
2. the tracking of silicon chip of solar cell as claimed in claim 1, it is characterized in that, described crystalline silicon workpiece is monocrystalline silicon silicon rod, polysilicon silicon ingot or mono-like silicon ingot;
Or described trace information comprises the manufacturer of silicon chip, productive year, particular location, size and the resistivity in described crystalline silicon workpiece, at least one in impurity concentration.
3. the tracking of silicon chip of solar cell as claimed in claim 1, it is characterized in that, the power of the laser adopted is 10 ~ 100W, wavelength is 250 ~ 1064nm, laser pulse frequency is 1kHz ~ 300kHz, and sweep speed is 10 ~ 1000mm/s, and pumping current is 10 ~ 50A, delineation number of times is pulse or the continuous laser of 1 ~ 100 time, the described selected cut surface hot spot reaching micron dimension diameter being irradiated to described crystalline silicon workpiece carries out intensive scanning slot after focusing on.
4. the tracking of silicon chip of solar cell as claimed in claim 1, it is characterized in that, the live width of described score line is 100 ~ 300 μm, and the degree of depth is 10 ~ 100 μm, and spacing is 0.5 ~ 5mm.
5. the tracking of silicon chip of solar cell as claimed in claim 1, it is characterized in that, the degree of depth of described multiple score line is all identical, and spacing changes along with line width variation, and represents different encoding value with the described score line of different live width.
6. the tracking of silicon chip of solar cell as claimed in claim 5, it is characterized in that, live width is the score line presentation code " 0 " of 100 μm, live width is the score line presentation code " 1 " of 120 μm, live width is the score line presentation code " 2 " of 140 μm, live width is the score line presentation code " 3 " of 160 μm, live width is the score line presentation code " 4 " of 180 μm, live width is the score line presentation code " 5 " of 200 μm, live width is the score line presentation code " 6 " of 220 μm, live width is the score line presentation code " 7 " of 240 μm, live width is the score line presentation code " 8 " of 260 μm, live width is the score line presentation code " 9 " of 280 μm.
7. the tracking of silicon chip of solar cell as claimed in claim 1, it is characterized in that, described coding pattern also comprises original position and final position, described original position and final position are symmetrically distributed about described check position respectively, and the score line mode of described original position, final position and check position is the score line of closing on two 100-300 μm of live widths.
8. the tracking of silicon chip of solar cell as claimed in claim 7, it is characterized in that, the coded message of described coding site also comprises the coded message of crystalline silicon workpiece, the coded message of described crystalline silicon workpiece is positioned at described check position side, the coded message of described position of silicon wafer is positioned at described check position opposite side, and the score line mode of the coded message of described crystalline silicon workpiece is close on 3 score line arranged side by side.
9. the tracking of silicon chip of solar cell as claimed in claim 8, is characterized in that, the coded message of described crystalline silicon workpiece is made up of the equally spaced score line group of four row, and each score line group comprises 3 score line; The coded message of described coding site included the grouping information in one group of same described crystalline silicon workpiece before described final position, was made up of 3 score line, and numbering increases progressively from top to bottom successively.
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| JP7096657B2 (en) * | 2017-10-02 | 2022-07-06 | 株式会社ディスコ | Wafer processing method |
| FR3089350B1 (en) | 2018-11-29 | 2020-12-25 | Commissariat Energie Atomique | SORTING AND RECYCLING OF PHOTOVOLTAIC MODULES OR SOLAR CELLS PRESENTING INFORMATION STORAGE AND DISPLAY FUNCTIONS |
| WO2020109696A1 (en) | 2018-11-29 | 2020-06-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photovoltaic solar cell having information storage and display functions |
| FR3089349B1 (en) | 2018-11-29 | 2021-09-17 | Commissariat Energie Atomique | PHOTOVOLTAIC SOLAR CELL WITH INFORMATION STORAGE AND DISPLAY FUNCTIONS |
| CN110120441B (en) * | 2019-04-03 | 2021-04-23 | 常州雷射激光设备有限公司 | Flexible gallium arsenide thin film battery back electrode laser windowing process and equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175425A (en) * | 1987-06-15 | 1992-12-29 | Leuze Electronic Gmbh & Co. | Process for marking semiconductor surfaces |
| US6797585B1 (en) * | 2003-10-07 | 2004-09-28 | Lsi Logic Corporation | Nonintrusive wafer marking |
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| JP2007234945A (en) * | 2006-03-02 | 2007-09-13 | Toshiba Ceramics Co Ltd | Laser marking wafer and its manufacturing method |
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| US5175425A (en) * | 1987-06-15 | 1992-12-29 | Leuze Electronic Gmbh & Co. | Process for marking semiconductor surfaces |
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