CN103489963A - Method for tracking solar cell silicon wafer - Google Patents
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- CN103489963A CN103489963A CN201310470559.6A CN201310470559A CN103489963A CN 103489963 A CN103489963 A CN 103489963A CN 201310470559 A CN201310470559 A CN 201310470559A CN 103489963 A CN103489963 A CN 103489963A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 100
- 239000010703 silicon Substances 0.000 title claims abstract description 100
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title abstract description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 46
- 239000012535 impurity Substances 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 230000003760 hair shine Effects 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract 3
- 238000010329 laser etching Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003908 quality control method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
A method for tracking a soar cell silicon wafer comprises the following steps that a groove is formed in a selected cutting face of a crystalline silicon workpiece in a laser etching mode, a series of etching lines of different widths and intervals are formed, all the etching lines are encoded to form a code pattern for marking tracking information, and at least one of the widths, the depths and the intervals of the etching lines are used as an encoding object. The method for tracking the soar cell silicon wafer can track a crystalline silicon solar cell silicon wafer, the process is simple, and cost is low.
Description
[technical field]
The invention belongs to technical field of solar cells, be specifically related to a kind of method that adopts laser grooving and scribing to realize the tracking of crystal silicon solar energy battery silicon chip.
[background technology]
Since entering this century, the photovoltaic industry becomes one of fastest-rising industry in the world, and in all kinds of solar cells, crystal silicon solar energy battery is in occupation of 80% the market share nearly.Crystal silicon solar energy battery utilizes the photovoltaic effect of p-n junction to realize opto-electronic conversion, and the sunlight absorbed is converted to electric energy, and is load supplying.What in solar cell, play a key effect is mainly formed p-n junction structure in the solar cell preparation process, there is the semi-conducting material of certain energy gap after the radiation of receiving sunlight, the photon that energy surpasses the semiconductor energy gap can excite the generation electron hole pair in semiconductor bulk, the electron hole pair produced is separated by the internal electric field of p-n junction, producing photogenerated current and photoproduction electromotive force, is load supplying by external circuit.
The restriction photovoltaic industry continues cost and the conversion efficiency that restraining factors of development are exactly solar cell at present.High expensive with relative poor efficiency is the bottleneck that the restriction industry continues development.One of them key constraints is that the silicon chip used in traditional crystal-silicon solar cell production process is all often the silicon chip adopted from different resistivity of different productive years of different manufacturers, often be difficult in process of production screen and select one by one, this causes very large difficulty for experimental study and large batch of production classification, how the silicon chip information of producing is reasonably classified and recognition and tracking, this becomes the problem that each large battery production producer and scientific research institutions are studied always.
Can well embody the flow process of whole production chain for the tracking of silicon chip information, comprise the selection of silicon material, the mode of ingot casting or crystal pulling, silicon chip impurity concentration etc., the on-line tracing of silicon chip also can produce for follow-up battery manufacture good directive function simultaneously, comprise the optimization of experiment, the coupling of industrialization etc.Research about this one side yet there are no the Patents report.
[summary of the invention]
In view of above-mentioned condition, be necessary to provide a kind of and can follow the tracks of that silicon solar cell silicon chip, technique are simple, the tracking of lower-cost silicon chip of solar cell.
A kind of tracking of silicon chip of solar cell, comprise the steps:
Adopt the laser grooving and scribing mode to be slotted on the described selected cut surface of described crystalline silicon workpiece, form a plurality of delineation lines of a series of different in width and spacing, and described a plurality of delineation lines are encoded, to be formed for the coding pattern of mark trace information, at least one of wherein take in live width, the degree of depth and the spacing of described delineation line is coded object.
In embodiment, described crystalline silicon workpiece is monocrystalline silicon silicon rod, polysilicon silicon ingot or quasi-monocrystalline silicon ingot therein;
Perhaps, described trace information comprises the manufacturer, productive year, particular location, size and resistivity in described crystalline silicon workpiece, at least one in impurity concentration of silicon chip.
Therein in embodiment, the power of the laser adopted is 10～100W, wavelength is 250～1064nm, laser pulse frequency is 1kHz～300kHz, sweep speed is 10～1000mm/s, pumping current is 10～50A, delineation number of times be 1～100 time pulse or continuous laser, and the hot spot that will after focusing on, reach the micron dimension diameter shines on the described selected cut surface of described crystalline silicon workpiece and carries out intensive scanning fluting.
In embodiment, the live width of described delineation line is 100～300 μ m therein, and the degree of depth is 10～100 μ m, and spacing is 0.5～5mm.
In embodiment, the degree of depth of described a plurality of delineation lines is all identical therein, and spacing changes along with line width variation, and means different coding numerical value with the described delineation line of different live widths.
Therein in embodiment, the delineation line presentation code " 0 " that live width is 100 μ m, the delineation line presentation code " 1 " that live width is 120 μ m, the delineation line presentation code " 2 " that live width is 140 μ m, the delineation line presentation code " 3 " that live width is 160 μ m, the delineation line presentation code " 4 " that live width is 180 μ m, the delineation line presentation code " 5 " that live width is 200 μ m, the delineation line presentation code " 6 " that live width is 220 μ m, the delineation line presentation code " 7 " that live width is 240 μ m, the delineation line presentation code " 8 " that live width is 260 μ m, the delineation line presentation code " 9 " that live width is 280 μ m.
Therein in embodiment, described coding pattern comprises coding site and check position, described check position is positioned at the zone, center of described coding site, the coded message of described coding site comprises the coded message of position of silicon wafer, the coded message of described position of silicon wafer is comprised of the delineation line that tilts of the described check position fixed range of distance, according to the fixed range of described inclination delineation line and check position, can judge the positional information that described silicon chip is arranged in described crystalline silicon workpiece.
Therein in embodiment, described coding pattern also comprises original position and final position, described original position and final position are symmetrically distributed about described check position respectively, and the delineation line mode of described original position, final position and check position is to close on the delineation line of two 100-300 μ m live widths.
Therein in embodiment, the coded message of described coding site also comprises the coded message of crystalline silicon workpiece, the coded message of described crystalline silicon workpiece is positioned at described check position one side, the coded message of described position of silicon wafer is positioned at described check position opposite side, and the delineation line mode of the coded message of described crystalline silicon workpiece is to close on 3 delineation lines arranged side by side.
In embodiment, the coded message of described crystalline silicon workpiece is comprised of the equally spaced delineation line of four row group therein, and each delineation line group comprises 3 delineation lines; The coded message of described coding site included one group of grouping information in same described crystalline silicon workpiece before described final position, 3 delineation lines, consisted of, and numbering increases progressively from top to bottom successively.
In embodiment, also comprise the steps: therein
Described crystalline silicon workpiece after cross-notching is cleaned, wipe oil impurity and lbg damage;
Described crystalline silicon workpiece is carried out to the silicon chip cutting, complete section work;
The silicon chip that section is finished is cleaned, and removes damage and greasy dirt and verifies laser grooving and scribing line following effect.
In embodiment, the cleaning agent of wipe oil and laser damage is sodium hydroxide solution therein, and the quality percentage composition is 5-15%, 25 ℃ of temperature, or be tetramethyl ammonium hydroxide solution, solution quality percentage composition 5-20%, 25 ℃ of temperature.
The tracking of above-mentioned silicon chip of solar cell at least has the following advantages:
(1) slotted on the cut surface of silicon chip of solar cell by the mode that adopts the laser incising line, formed the delineation line of codified, thereby realized the tracking of silicon chip of solar cell, be convenient to the production in enormous quantities of commercial running and the control of yields.
(2) adopt the mode of laser incising line to realize a silicon chip tracking, technique is simple, is easy to be integrated in industrialization production, in the situation that do not increase extra cost, by increasing a laser, can realize.
(3) adopt the mode of laser incising line to realize the tracking of silicon ingot (or silicon rod) and silicon chip information, there is good reference function for quality control and the R&D and production of follow-up silicon material, for research work provides a good reference.
(4) adopt laser incising line mode to realize the tracking of silicon ingot (or silicon rod) and silicon chip information, can well avoid the later stage assembly because the mismatch phenomenon of the former thereby generation of solar cell.
[accompanying drawing explanation]
Fig. 1 is the schematic diagram of the coding pattern of silicon ingot;
Fig. 2 is the enlarged diagram of the silicon ingot coded message of coding pattern;
Fig. 3 is the generalized section of coding pattern.
[embodiment]
For the ease of understanding the present invention, below with reference to relevant drawings, the present invention is described more fully.Provided preferred embodiment of the present invention in accompanying drawing.But the present invention can realize in many different forms, is not limited to embodiment described herein.On the contrary, provide the purpose of these embodiment be make the understanding of disclosure of the present invention more comprehensively thorough.
It should be noted that, when element is called as " being fixed in " another element, can directly can there be element placed in the middle in it on another element or also.When an element is considered to " connection " another element, it can be directly connected to another element or may have centering elements simultaneously.Term as used herein " vertical ", " level ", " left side ", " right side " and similar statement are just for illustrative purposes.
Unless otherwise defined, all technology that this paper is used are identical with the implication that belongs to the common understanding of those skilled in the art of the present invention with scientific terminology.The term used in specification of the present invention herein, just in order to describe the purpose of specific embodiment, is not intended to be restriction the present invention.Term as used herein " and/or " comprise one or more relevant Listed Items arbitrarily with all combinations.
The tracking of the silicon chip of solar cell of embodiment of the present invention, the mode of employing lbg depicts the groove shape structure at a series of different in width and interval on the crystalline silicon workpiece of crystal-silicon solar cell, the follow-up groove shape structure for delineation is carried out code identification, after finishing, crystalline silicon workpiece section just can identify according to laser grooving and scribing patterns different on silicon chip (that is, coding pattern) specifying informations such as particular location in manufacturer, productive year, silicon ingot and the silicon rod of silicon chip, size, resistivity.This tracking comprises step (a)～(e):
(a) choose the crystalline silicon workpiece drawn, and after preliminary treatment crystalline silicon workpiece, selected cut surface.
This pretreated technique comprises carries out deckle and the surface of crystalline silicon workpiece is cleaned the crystalline silicon workpiece.The crystalline silicon workpiece is carried out to deckle, so that determine cut lengths and the cutting profile of crystalline silicon workpiece.Surface to the crystalline silicon workpiece is cleaned, and with the pollutant of avoiding the crystalline silicon surface of the work, follow-up lbg is impacted.
This crystalline silicon workpiece comprises monocrystalline silicon silicon rod, polysilicon silicon ingot and the quasi-monocrystalline silicon ingot etc. that industry generally adopts.Described selected silicon chip cut surface should be positioned at same direction with follow-up laser incising cuttings.
The trace information of silicon chip of solar cell comprises manufacturer, productive year, the particular location in the crystalline silicon workpiece, size and the resistivity of silicon chip, at least one in impurity concentration.
(b) adopt the laser grooving and scribing mode to be slotted on the selected cut surface of crystalline silicon workpiece, form a plurality of delineation lines of a series of different in width and spacing, and a plurality of delineation lines are encoded, to be formed for the coding pattern of mark trace information, wherein take the delineation line live width, the degree of depth and spacing at least one be coded object.
In a preferred embodiment, the power of the laser adopted is 10～100W, wavelength is 250～1064nm, laser pulse frequency is 1kHz～300kHz, sweep speed is 10～1000mm/s, pumping current is 10～50A, delineation number of times be 1～100 time pulse or continuous laser, and the hot spot that will after focusing on, reach the micron dimension diameter shines on the selected cut surface of crystalline silicon workpiece and carries out intensive scanning fluting.
Wherein, the delineation line live width can be 100～300 μ m, the degree of depth can be 10～100 μ m, spacing can be 0.5～5mm so that in the situation that the higher employing of efficiency laser slotted.
Coded system to above-mentioned delineation line can be for multiple, for example, can adopt the different live widths of delineation line to mean different encoded radios, can adopt the different spacing of delineation line to mean different encoded radios, also can adopt the different depth of delineation line to mean different numerical value, or adopt the two, three's combination.
In the present embodiment, in order to improve the efficiency that adopts lbg and to identify conveniently, adopt the different live widths of delineation line to mean different encoded radios.That is, at step (b), the degree of depth of a plurality of delineation lines is all identical, and spacing changes along with line width variation, and in other words, groove depth should be consistent, and does not wait according to the cutting width and difference in cutting interval interval.And, with the delineation line of different live widths, mean different coding numerical value, for example table one.
Table one
In other words, the delineation line presentation code " 0 " that live width is 100 μ m; The delineation line presentation code " 1 " that live width is 120 μ m; The delineation line presentation code " 2 " that live width is 140 μ m; The delineation line presentation code " 3 " that live width is 160 μ m; The delineation line presentation code " 4 " that live width is 180 μ m; The delineation line presentation code " 5 " that live width is 200 μ m; The delineation line presentation code " 6 " that live width is 220 μ m; The delineation line presentation code " 7 " that live width is 240 μ m; The delineation line presentation code " 8 " that live width is 260 μ m; The delineation line presentation code " 9 " that live width is 280 μ m.
Further, coding pattern comprises original position, coding site, check position and final position, and check position is positioned at the zone, center of coding site, and original position and final position are symmetrically distributed about check position respectively.For example, the delineation line mode of original position, final position and check position is to close on the delineation line of two 100-300 μ m live widths.
Further, the coded message of coding site comprises the coded message of the crystalline silicon workpiece that is positioned at check position one side and the coded message that is positioned at the position of silicon wafer of check position opposite side.The delineation line mode of the coded message of crystalline silicon workpiece is to close on 3 delineation lines arranged side by side.For example, the coded message of crystalline silicon workpiece is comprised of the equally spaced delineation line of four row group, and each delineation line group comprises 3 delineation lines.
The coded message of position of silicon wafer is comprised of the delineation line that tilts of Distance test position fixed range, according to the fixed range of described inclination delineation line and check position, can judge the positional information that described silicon chip is arranged in described crystalline silicon workpiece.Preferably, the delineation line that tilts is spent compared to the delineation line inclination 10～50 of the coded message of crystalline silicon workpiece, and fixed range is 1～10mm, and live width is 100-300 μ m;
Simultaneously, the coded message of coding site included one group of grouping information in same crystalline silicon workpiece before final position, 3 delineation lines, consisted of, and numbering increases progressively from top to bottom successively.
Below illustrate above-mentioned coded system, Fig. 1 is the schematic diagram of the coding pattern of silicon ingot, and Fig. 2 is the enlarged diagram of silicon ingot coded message, and Fig. 3 is the generalized section of coding pattern.
Refer to Fig. 1 to Fig. 3, the coding pattern of silicon ingot 7 comprises the coded message 2 of original position 1, silicon ingot, the coded message 4 of silicon chip, grouping information 5 in same silicon ingot, check position 3 and final position 6, check position 3 is positioned at the zone, center of coding site (coded message 2 of silicon ingot and the coded message 4 of position of silicon wafer), and original position 1 and final position 6 are symmetrically distributed about check position 3 respectively.
The coded message 2 of silicon ingot comprises four groups of equally spaced laser scoring groups 200,201,202,203, every group of groove group 200,201,202,203 comprises 3 delineation lines, the width of delineation line is corresponding different coded digital, information corresponding to coded digital that 3 delineation lines of every group of delineation line group form, can be manufacturer, productive year, silicon ingot resistivity, comprise the information such as impurity concentration, size dimension, sample type.For example, groove group 200 mark silicon ingot manufacturer coded messages; Groove group 201 mark silicon ingot productive year coded messages; Groove group 202 mark silicon ingot sizes and type coding information; Groove group 203 mark silicon ingot impurity concentration coded messages.
The coded message 4 of position of silicon wafer comprises that the inclined line segment by a Distance test position fixed range forms, and the angle of itself and horizontal direction is-30～-80 degree, and its width is at 100～300 μ m, and the degree of depth is 10～100 μ m.Follow-up through after multi-wire saw, judging the positional information that cut silicon chip is arranged in silicon ingot according to the fixed range of tilt delineation line and check position.
The coded message of original position 1, check position 3, final position 6 forms by 2 laser incising line, and live width is between 100～300 μ m, and the degree of depth is between 10～100 μ m.
(c) the crystalline silicon workpiece after cross-notching is cleaned, wipe oil impurity and lbg damage.
For example, in step (c), the cleaning agent of wipe oil and laser damage is sodium hydroxide solution, and the quality percentage composition is 5-15%, 25 ℃ of temperature, or be tetramethyl ammonium hydroxide solution, solution quality percentage composition 5-20%, 25 ℃ of temperature.
(d) the crystalline silicon workpiece is carried out to the silicon chip cutting, complete section work.
In step (d), the multi-wire saw equipment that described chopper and slicer can generally adopt for the crystal silicon solar industry.
(e) silicon chip section finished is cleaned, and removes damage and greasy dirt and verifies laser grooving and scribing line following effect.
In step (e), the described cleaning process generally adopted for industry that section is cleaned.The multi-wire saw equipment that chopper and slicer can generally adopt for the crystal silicon solar industry.
The tracking of above-mentioned silicon chip of solar cell at least has the following advantages:
(1) slotted on the cut surface of silicon chip of solar cell by the mode that adopts the laser incising line, formed the delineation line of codified, thereby realized the tracking of silicon chip of solar cell, be convenient to the production in enormous quantities of commercial running and the control of yields.
(2) adopt the mode of laser incising line to realize a silicon chip tracking, technique is simple, is easy to be integrated in industrialization production, in the situation that do not increase extra cost, by increasing a laser, can realize.
(3) adopt the mode of laser incising line to realize the tracking of silicon ingot (or silicon rod) and silicon chip information, there is good reference function for quality control and the R&D and production of follow-up silicon material, for research work provides a good reference.
(4) adopt laser incising line mode to realize the tracking of silicon ingot (or silicon rod) and silicon chip information, can well avoid the later stage assembly because the mismatch phenomenon of the former thereby generation of solar cell.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. the tracking of a silicon chip of solar cell, is characterized in that, comprises the steps:
Adopt the laser grooving and scribing mode to be slotted on the described selected cut surface of crystalline silicon workpiece, form a plurality of delineation lines of a series of different in width and spacing, and described a plurality of delineation lines are encoded, to be formed for the coding pattern of mark trace information, at least one of wherein take in live width, the degree of depth and the spacing of described delineation line is coded object.
2. the tracking of silicon chip of solar cell as claimed in claim 1, is characterized in that, described crystalline silicon workpiece is monocrystalline silicon silicon rod, polysilicon silicon ingot or quasi-monocrystalline silicon ingot;
Perhaps, described trace information comprises the manufacturer, productive year, particular location, size and resistivity in described crystalline silicon workpiece, at least one in impurity concentration of silicon chip.
3. the tracking of silicon chip of solar cell as claimed in claim 1, it is characterized in that, the power of the laser adopted is 10～100W, wavelength is 250～1064nm, laser pulse frequency is 1kHz～300kHz, and sweep speed is 10～1000mm/s, and pumping current is 10～50A, delineation number of times be 1～100 time pulse or continuous laser, the hot spot that will after focusing on, reach the micron dimension diameter shines on the described selected cut surface of described crystalline silicon workpiece and carries out intensive scanning fluting.
4. the tracking of silicon chip of solar cell as claimed in claim 1, is characterized in that, the live width of described delineation line is 100～300 μ m, and the degree of depth is 10～100 μ m, and spacing is 0.5～5mm.
5. the tracking of silicon chip of solar cell as claimed in claim 1, is characterized in that, the degree of depth of described a plurality of delineation lines is all identical, and spacing changes along with line width variation, and mean different coding numerical value with the described delineation line of different live widths.
6. the tracking of silicon chip of solar cell as claimed in claim 5, it is characterized in that, the delineation line presentation code " 0 " that live width is 100 μ m, the delineation line presentation code " 1 " that live width is 120 μ m, the delineation line presentation code " 2 " that live width is 140 μ m, the delineation line presentation code " 3 " that live width is 160 μ m, the delineation line presentation code " 4 " that live width is 180 μ m, the delineation line presentation code " 5 " that live width is 200 μ m, the delineation line presentation code " 6 " that live width is 220 μ m, the delineation line presentation code " 7 " that live width is 240 μ m, the delineation line presentation code " 8 " that live width is 260 μ m, the delineation line presentation code " 9 " that live width is 280 μ m.
7. the tracking of silicon chip of solar cell as claimed in claim 1, it is characterized in that, described coding pattern comprises coding site and check position, described check position is positioned at the zone, center of described coding site, the coded message of described coding site comprises the coded message of position of silicon wafer, the coded message of described position of silicon wafer is comprised of the delineation line that tilts of the described check position fixed range of distance, according to the fixed range of described inclination delineation line and check position, can judge the positional information that described silicon chip is arranged in described crystalline silicon workpiece.
8. the tracking of silicon chip of solar cell as claimed in claim 7, it is characterized in that, described coding pattern also comprises original position and final position, described original position and final position are symmetrically distributed about described check position respectively, and the delineation line mode of described original position, final position and check position is to close on the delineation line of two 100-300 μ m live widths.
9. the tracking of silicon chip of solar cell as claimed in claim 7, it is characterized in that, the coded message of described coding site also comprises the coded message of crystalline silicon workpiece, the coded message of described crystalline silicon workpiece is positioned at described check position one side, the coded message of described position of silicon wafer is positioned at described check position opposite side, and the delineation line mode of the coded message of described crystalline silicon workpiece is to close on 3 delineation lines arranged side by side.
10. the tracking of silicon chip of solar cell as claimed in claim 9, is characterized in that, the coded message of described crystalline silicon workpiece is comprised of the equally spaced delineation line of four row group, and each delineation line group comprises 3 delineation lines; The coded message of described coding site included one group of grouping information in same described crystalline silicon workpiece before described final position, 3 delineation lines, consisted of, and numbering increases progressively from top to bottom successively.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109594125A (en) * | 2017-10-02 | 2019-04-09 | 株式会社迪思科 | The processing method of hexagonal crystal single crystal rod and chip |
| CN110120441A (en) * | 2019-04-03 | 2019-08-13 | 常州雷射激光设备有限公司 | Flexible gallium arsenide film battery back electrode laser windowing Processes and apparatus |
| WO2020109696A1 (en) | 2018-11-29 | 2020-06-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photovoltaic solar cell having information storage and display functions |
| FR3089350A1 (en) | 2018-11-29 | 2020-06-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | SORTING AND RECYCLING OF PHOTOVOLTAIC MODULES OR SOLAR CELLS WITH INFORMATION STORAGE AND DISPLAY FUNCTIONS |
| FR3089349A1 (en) | 2018-11-29 | 2020-06-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | PHOTOVOLTAIC SOLAR CELL HAVING INFORMATION STORAGE AND DISPLAY FUNCTIONS |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109594125A (en) * | 2017-10-02 | 2019-04-09 | 株式会社迪思科 | The processing method of hexagonal crystal single crystal rod and chip |
| TWI815819B (en) * | 2017-10-02 | 2023-09-21 | 日商迪思科股份有限公司 | Wafer processing methods |
| WO2020109696A1 (en) | 2018-11-29 | 2020-06-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photovoltaic solar cell having information storage and display functions |
| FR3089350A1 (en) | 2018-11-29 | 2020-06-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | SORTING AND RECYCLING OF PHOTOVOLTAIC MODULES OR SOLAR CELLS WITH INFORMATION STORAGE AND DISPLAY FUNCTIONS |
| FR3089349A1 (en) | 2018-11-29 | 2020-06-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | PHOTOVOLTAIC SOLAR CELL HAVING INFORMATION STORAGE AND DISPLAY FUNCTIONS |
| CN113196503A (en) * | 2018-11-29 | 2021-07-30 | 原子能和替代能源委员会 | Photovoltaic solar cell with information storage and display functions |
| CN110120441A (en) * | 2019-04-03 | 2019-08-13 | 常州雷射激光设备有限公司 | Flexible gallium arsenide film battery back electrode laser windowing Processes and apparatus |
| CN110120441B (en) * | 2019-04-03 | 2021-04-23 | 常州雷射激光设备有限公司 | Flexible gallium arsenide thin film battery back electrode laser windowing process and equipment |
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