CN111370391A - Novel SE Mark point pattern structure and preparation method thereof - Google Patents
Novel SE Mark point pattern structure and preparation method thereof Download PDFInfo
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- CN111370391A CN111370391A CN202010009929.6A CN202010009929A CN111370391A CN 111370391 A CN111370391 A CN 111370391A CN 202010009929 A CN202010009929 A CN 202010009929A CN 111370391 A CN111370391 A CN 111370391A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000007639 printing Methods 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims description 16
- 239000011574 phosphorus Substances 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 7
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 7
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 7
- 238000007781 pre-processing Methods 0.000 claims description 4
- 238000012958 reprocessing Methods 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 21
- 238000009776 industrial production Methods 0.000 abstract description 8
- 238000012545 processing Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000010330 laser marking Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Laser Beam Processing (AREA)
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Abstract
The invention discloses a novel SE Mark point pattern structure and a preparation method thereof, which solve the problems that the pattern in the prior art is easy to cause Mark point damage cost, high stability and long manufacturing time due to secondary processing in the same area. The invention can improve the production efficiency and the productivity in the production process and reduce the alarm frequency of equipment through the special Mark points, greatly shortens the manufacturing time, is convenient for equipment identification, has good stability in the industrial production process, is completely compatible with the equipment, and can obtain better appearance of the positioning point and convenient identification by laser to form four cross Mark points, the transverse lines and the vertical lines can not be marked in an overlapping manner in the marking process, the equipment camera can be more easily identified in the printing process, the alarm frequency is reduced, and the industrial production efficiency is effectively improved.
Description
Technical Field
The invention relates to the technical field of laser marking, in particular to a novel SE Mark point pattern structure which can prevent Mark points from being overlapped and reaching standards and damaged in a marking process, can be better and easily identified by an equipment camera during printing, can reduce the alarm times, has a simple processing process, can reduce the processing time and can improve the yield and a preparation method thereof.
Background
Solar energy is inexhaustible renewable energy source and is also clean energy source, and no environmental pollution is generated. Among the effective utilization of solar energy, solar photovoltaic utilization is one of the most spotlighted projects in the most active research field which develops fastest in recent years. For this reason, solar cells have been developed and developed. The solar cell is manufactured mainly based on semiconductor materials, and the working principle of the solar cell is that photoelectric materials are utilized to generate photoelectron conversion reaction after absorbing light energy, and the photoelectric materials are different according to the used materials. With the development of science and technology of crystalline silicon batteries, PERC batteries become the mainstream of the market gradually, the PERC batteries and the novel PERC superposition technology batteries become mature gradually and move towards industrial production in the development of the next years, the PERC superposition SE technology is a technical path for effectively improving the battery efficiency, is also a technical means which is easy to realize and has low consumption cost, wherein the superposition SE technology is realized by a laser doping technology, and a laser doping pattern Mark point is a key point of the technology.
In the process of manufacturing a selective emitter structure by using laser, four aligned Mark points at fixed positions are generally needed to be marked when a battery is printed, and are respectively located in four corner regions of a silicon wafer, the four Mark points are mutually independent, a laser is needed to Mark independently in the manufacturing process, and the marking time of the Mark points influences the yield of the whole equipment, so that the selection of a proper Mark graph is an important part for improving the productivity and increasing the income. The mark point structure of preparation SE battery piece in the trade at present adopts laser all is square facula and facula diameter is 120um, and concentric circles figure excircle diameter is 500um, and inside total 4-5 circles can overlap in inside two circles juncture and beat the mark during laser marking, and the condition that the damage can appear after twice laser marking in same position like this just is not discerned easily and causes the equipment warning under the silk screen printing camera, and can cause the influence to the conversion efficiency of battery piece to a certain extent. A conventional alignment Mark point making pattern is a set of concentric circles, which, although it can realize a circular Mark point, has the following defects: the repeated marking is easy to damage the silicon chip, and the time for manufacturing the Mark point is 0.2s, so that the production capacity of a production line is influenced.
Disclosure of Invention
The invention aims to solve the problem that the prior art is easy to cause Mark point damage in the secondary processing of the same area, and has high cost, high stability and long manufacturing time, and provides a novel SE Mark point pattern structure and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides a novel SE Mark point pattern structure, includes silicon chip and a plurality of Mark point, the Mark point is the cross structure, and the Mark point is used for PERC stack selective emitter technique by radium-shine four corner regions on silicon chip. The cross-shaped Mark point pattern avoids the problem that the conventional concentric circular Mark point pattern meets the same region to carry out secondary processing, reduces the damage of the Mark point, can be compatible with the existing laser doping equipment, shortens the laser marking time, greatly improves the productivity, is better and easy to be identified by an equipment camera in the printing process, and has simple processing technology for reducing the number of times of alarming.
Preferably, the Mark dot pattern structure comprises two mutually perpendicular straight lines, wherein one straight line is provided with a notch, and the notch passes through the other straight line. The notch can prevent the damage caused by repeated marking of the region on the Mark point due to the overlapping of two vertical straight lines.
A novel preparation method of SE Mark point pattern structure comprises the following steps:
s1: preprocessing a silicon wafer;
s2: preparing a P-N junction;
s3: SE laser doping;
s4: preparing a Mark point;
s5: reprocessing the silicon wafer;
s6: laser grooving;
s7: printing a back electrode and a back electric field on the back surface of the silicon wafer;
s8: and (5) sintering testing. The invention can improve the production efficiency and the productivity in the production process, reduce the alarm times of the equipment and greatly shorten the manufacturing time through the special Mark point, and the preparation method is convenient for equipment identification, has good stability in the industrial production process and is completely compatible with the equipment.
Preferably, the S1 includes the following steps:
s11: pre-cleaning a silicon wafer;
s12: and (5) performing textured surface preparation on the silicon wafer.
Preferably, the S2 includes the following steps:
s21: adjusting the amount of N2, the oxygen flux, the phosphorus source amount and the diffusion temperature;
s22: preparing a phosphorus diffusion layer by using a thermal diffusion process;
wherein the sheet resistance of the phosphorus diffusion layer in S22 is 110 Ω.
Preferably, the S3 includes the following steps:
s31: selectively doping the position of the metal fine grid line to be printed on the front surface of the silicon wafer, namely a preset pattern by adopting laser;
s32: and (3) locally melting the laser, further diffusing phosphorus at the laser scanning position, forming a local high-concentration phosphorus doped region, reducing the sheet resistance value of the region to 60 omega, and enabling all line segments to be the positions of the laser surface to be scanned. The high-concentration phosphorus doped region is the position of the subsequent metal fine grid line printing.
Preferably, the S4 includes the following steps:
s41: selecting and adjusting laser parameters;
s42: and adjusting until the cross Mark points of the laser in the four corner areas of the cell piece comprise a straight line which is perpendicular to the straight line with a gap on the other strip. When marking Mark points by laser, the laser parameters need to be selected independently, the laser irradiates four crossed Mark points and then the battery piece, a line is marked to be a straight line with a gap in the marking process to prevent two lines from being intersected and overlapped vertically, so that the Mark points are damaged by repeated marking in a local area, a camera is better and easy to identify when printing, the alarming frequency is reduced, and the marking time is shortened, so that the productivity is greatly improved.
Preferably, the S5 includes the following steps:
s51: etching the back of the silicon wafer to remove PSG, annealing and an aluminum oxide passivation film;
s52: and carrying out SiNx layer process preparation on the front surface and the back surface of the silicon wafer.
Preferably, the S7 includes the following steps:
s71: carrying out back electrode and back electric field printing on the back surface of the silicon wafer;
s72: turning the silicon wafer 180 degrees, and adjusting the positions of the four Mark points successfully captured by a positive electrode printer camera by taking the four Mark points prepared by laser scanning as printing alignment points;
s73: enabling the metal fine grid line to be correspondingly arranged on the high-concentration phosphorus-doped region;
s74: SE cells were printed in bulk.
Preferably, the S8 includes the following steps:
s81: drying and sintering the front and back metal slurry;
s82: and testing and grading the SE battery to finish the preparation.
Therefore, the invention has the following beneficial effects:
1. according to the invention, the production efficiency can be improved and the productivity can be improved in the production process through the special Mark points, the alarm frequency of the equipment is reduced, the manufacturing time is greatly shortened, the preparation method is convenient for equipment identification, the stability is good in the industrial production process, and the equipment is completely compatible;
2. the Mark point pattern can avoid the problem that the conventional Mark pattern encounters secondary processing in the same area, reduces the damage of the Mark point, is completely compatible with the existing laser doping equipment, greatly reduces the cost, has good stability in the industrial production process, shortens the whole laser marking time greatly, and improves the productivity, and the manufacturing time is less than or equal to 0.1 s;
3. four cross Mark points are formed by laser so as to obtain better site feature and convenient identification, marking cannot be overlapped between a transverse line and a vertical line in the marking process, an equipment camera is easier to identify during printing, and the number of alarming times is reduced.
Drawings
Fig. 1 is a schematic diagram of the Mark point structure of the invention.
Fig. 2 is a flow chart of the operation of the present invention.
Detailed Description
The invention is further described with reference to the following detailed description and accompanying drawings.
Example (b):
this embodiment is a novel SE Mark point pattern structure, as shown in fig. 1, including silicon chip and four Mark points, four Mark points are the cross structure, and Mark point includes two mutually perpendicular's straight line, and one of them straight line has the breach, and the breach passes another straight line, and Mark point is radium-shine and is used for PERC stack selective emitter technique in four corner regions of silicon chip.
The invention also correspondingly provides a preparation method of the novel SE Mark point pattern structure, which specifically comprises the following steps as shown in FIG. 2:
s1: preprocessing a silicon wafer;
wherein, step S1 specifically includes the following steps:
s11: pre-cleaning a silicon wafer;
s12: and (5) performing textured surface preparation on the silicon wafer.
S2: preparing a P-N junction;
wherein, step S2 specifically includes the following steps:
s21: adjusting the amount of N2, the oxygen flux, the phosphorus source amount and the diffusion temperature;
s22: the phosphorus diffusion layer is prepared by a thermal diffusion process, so that the sheet resistance of the phosphorus diffusion layer reaches 110 omega.
S3: SE laser doping;
wherein, step S3 specifically includes the following steps:
s31: selectively doping the position of the metal fine grid line to be printed on the front surface of the silicon wafer, namely a preset pattern by adopting laser;
s32: and (3) locally melting the laser, further diffusing phosphorus at the laser scanning position, forming a local high-concentration phosphorus doped region, reducing the sheet resistance value of the region to 60 omega, and enabling all line segments to be the positions of the laser surface to be scanned.
S4: preparing a Mark point;
wherein, step S4 specifically includes the following steps:
s41: selecting and adjusting laser parameters;
s42: and adjusting until the cross Mark points of the laser in the four corner areas of the cell piece comprise a straight line which is perpendicular to the straight line with a gap on the other strip.
S5: reprocessing the silicon wafer;
wherein, step S5 specifically includes the following steps:
s51: etching the back of the silicon wafer to remove PSG, annealing and an aluminum oxide passivation film;
s52: and carrying out SiNx layer process preparation on the front surface and the back surface of the silicon wafer.
S6: laser grooving; and (4) grooving the silicon wafer by using laser.
S7: printing a back electrode and a back electric field on the back surface of the silicon wafer;
wherein, step S7 specifically includes the following steps:
s71: carrying out back electrode and back electric field printing on the back surface of the silicon wafer;
s72: turning the silicon wafer 180 degrees, and adjusting the positions of the four Mark points successfully captured by a positive electrode printer camera by taking the four Mark points prepared by laser scanning as printing alignment points;
s73: enabling the metal fine grid line to be correspondingly arranged on the high-concentration phosphorus-doped region;
s74: SE cells were printed in bulk.
S8: sintering test;
wherein, step S8 specifically includes the following steps:
s81: drying and sintering the front and back metal slurry;
s82: and testing and grading the SE battery to finish the preparation.
The working process of the invention is as follows: firstly, preprocessing a silicon wafer, preparing a P-N junction and doping SE laser, preparing Mark points by using laser, reprocessing the silicon wafer, slotting by using laser, printing a back electrode and a back electric field on the back of the silicon wafer, and then carrying out sintering test; according to the invention, the production efficiency can be improved and the productivity can be improved in the production process through the special Mark points, the alarm frequency of the equipment is reduced, the manufacturing time is greatly shortened, the preparation method is convenient for equipment identification, the stability is good in the industrial production process, and the equipment is completely compatible; the Mark point pattern can avoid the problem that the conventional Mark pattern encounters secondary processing in the same area, reduces the damage of the Mark point, is completely compatible with the existing laser doping equipment, greatly reduces the cost, has good stability in the industrial production process, shortens the whole laser marking time greatly, and improves the productivity, and the manufacturing time is less than or equal to 0.1 s; four cross Mark points are formed by laser so as to obtain better site feature and convenient identification, marking cannot be overlapped between a transverse line and a vertical line in the marking process, an equipment camera is easier to identify during printing, and the number of alarming times is reduced.
The above embodiments are described in detail for the purpose of further illustrating the present invention and should not be construed as limiting the scope of the present invention, and the skilled engineer can make insubstantial modifications and variations of the present invention based on the above disclosure.
Claims (10)
1. The utility model provides a novel SE Mark point pattern structure, includes silicon chip and a plurality of Mark point, its characterized in that, Mark point is the cross structure, and Mark point is radiussed and is used for PERC stack selective emitter technique in four corner regions of silicon chip.
2. A novel SE Mark dot pattern structure as claimed in claim 1, wherein said Mark dot pattern structure comprises two mutually perpendicular lines, one of which is provided with a notch, the notch passing through the other line.
3. A novel method for preparing SE Mark dot pattern structures according to claim 1, characterized by comprising the steps of:
s1: preprocessing a silicon wafer;
s2: preparing a P-N junction;
s3: SE laser doping;
s4: preparing a Mark point;
s5: reprocessing the silicon wafer;
s6: laser grooving;
s7: printing a back electrode and a back electric field on the back surface of the silicon wafer;
s8: and (5) sintering testing.
4. The method for preparing a novel SE Mark dot pattern structure as claimed in claim 3, wherein said S1 comprises the steps of:
s11: pre-cleaning a silicon wafer;
s12: and (5) performing textured surface preparation on the silicon wafer.
5. The method for preparing a novel SE Mark dot pattern structure as claimed in claim 3, wherein said S2 comprises the steps of:
s21: adjusting the amount of N2, the oxygen flux, the phosphorus source amount and the diffusion temperature;
s22: preparing a phosphorus diffusion layer by using a thermal diffusion process;
wherein the sheet resistance of the phosphorus diffusion layer in S22 is 110 Ω.
6. The method for preparing a novel SE Mark dot pattern structure as claimed in claim 3, wherein said S3 comprises the steps of:
s31: selectively doping the position of the metal fine grid line to be printed on the front surface of the silicon wafer, namely a preset pattern by adopting laser;
s32: and (3) locally melting the laser, further diffusing phosphorus at the laser scanning position, forming a local high-concentration phosphorus doped region, reducing the sheet resistance value of the region to 60 omega, and enabling all line segments to be the positions of the laser surface to be scanned.
7. The method for preparing a novel SE Mark dot pattern structure as claimed in claim 3, wherein said S4 comprises the steps of:
s41: selecting and adjusting laser parameters;
s42: and adjusting until the cross Mark points of the laser in the four corner areas of the cell piece comprise a straight line which is perpendicular to the straight line with a gap on the other strip.
8. The method for preparing a novel SE Mark dot pattern structure as claimed in claim 3, wherein said S5 comprises the steps of:
s51: etching the back of the silicon wafer to remove PSG, annealing and an aluminum oxide passivation film;
s52: and carrying out SiNx layer process preparation on the front surface and the back surface of the silicon wafer.
9. The method for preparing a novel SE Mark dot pattern structure as claimed in claim 3, wherein said S7 comprises the steps of:
s71: carrying out back electrode and back electric field printing on the back surface of the silicon wafer;
s72: turning the silicon wafer 180 degrees, and adjusting the positions of the four Mark points successfully captured by a positive electrode printer camera by taking the four Mark points prepared by laser scanning as printing alignment points;
s73: enabling the metal fine grid line to be correspondingly arranged on the high-concentration phosphorus-doped region;
s74: SE cells were printed in bulk.
10. The method for preparing a novel SE Mark dot pattern structure as claimed in claim 3, wherein said S8 comprises the steps of:
s81: drying and sintering the front and back metal slurry;
s82: and testing and grading the SE battery to finish the preparation.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010009929.6A CN111370391A (en) | 2020-01-06 | 2020-01-06 | Novel SE Mark point pattern structure and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010009929.6A CN111370391A (en) | 2020-01-06 | 2020-01-06 | Novel SE Mark point pattern structure and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112531041A (en) * | 2020-12-02 | 2021-03-19 | 横店集团东磁股份有限公司 | SE (selective emitter) structure pattern and manufacturing method thereof |
| CN113540038A (en) * | 2021-06-30 | 2021-10-22 | 深圳莱宝高科技股份有限公司 | Alignment mark structure, substrate, mask plate and alignment method of substrate and mask plate |
| CN114346452A (en) * | 2022-01-10 | 2022-04-15 | 江西中弘晶能科技有限公司 | Novel MARK point manufacturing graphic design for improving MARK point subfissure |
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| CN106079905A (en) * | 2016-06-28 | 2016-11-09 | 广州市铭钰标识科技有限公司 | A kind of font application of laser marking |
| CN108550653A (en) * | 2018-04-24 | 2018-09-18 | 通威太阳能（合肥）有限公司 | A kind of anti-offset compensation method of SE batteries printing contraposition detection |
| CN108831961A (en) * | 2018-06-22 | 2018-11-16 | 通威太阳能（安徽）有限公司 | A kind of Mark dot pattern structure and preparation method thereof convenient for laser marking |
| CN109742049A (en) * | 2018-11-23 | 2019-05-10 | 苏州迈为科技股份有限公司 | A kind of cell piece alignment method and laser aid |
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2020
- 2020-01-06 CN CN202010009929.6A patent/CN111370391A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106079905A (en) * | 2016-06-28 | 2016-11-09 | 广州市铭钰标识科技有限公司 | A kind of font application of laser marking |
| CN108550653A (en) * | 2018-04-24 | 2018-09-18 | 通威太阳能（合肥）有限公司 | A kind of anti-offset compensation method of SE batteries printing contraposition detection |
| CN108831961A (en) * | 2018-06-22 | 2018-11-16 | 通威太阳能（安徽）有限公司 | A kind of Mark dot pattern structure and preparation method thereof convenient for laser marking |
| CN109742049A (en) * | 2018-11-23 | 2019-05-10 | 苏州迈为科技股份有限公司 | A kind of cell piece alignment method and laser aid |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112531041A (en) * | 2020-12-02 | 2021-03-19 | 横店集团东磁股份有限公司 | SE (selective emitter) structure pattern and manufacturing method thereof |
| CN113540038A (en) * | 2021-06-30 | 2021-10-22 | 深圳莱宝高科技股份有限公司 | Alignment mark structure, substrate, mask plate and alignment method of substrate and mask plate |
| CN114346452A (en) * | 2022-01-10 | 2022-04-15 | 江西中弘晶能科技有限公司 | Novel MARK point manufacturing graphic design for improving MARK point subfissure |
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Application publication date: 20200703 |
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