CN103390681A - GaN基光耦合器 - Google Patents

GaN基光耦合器 Download PDF

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CN103390681A
CN103390681A CN2013101706224A CN201310170622A CN103390681A CN 103390681 A CN103390681 A CN 103390681A CN 2013101706224 A CN2013101706224 A CN 2013101706224A CN 201310170622 A CN201310170622 A CN 201310170622A CN 103390681 A CN103390681 A CN 103390681A
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optical sensor
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G.波佐维沃
J.兰格拉克
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Infineon Technologies Austria AG
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Abstract

本发明涉及GaN基光耦合器。光耦合器包括设置在衬底上的GaN基光传感器和设置在与GaN基光传感器相同衬底上的GaN基光源。透明材料被插入在GaN基光传感器和GaN基光源之间。透明材料在GaN基光传感器和GaN基光源之间提供电流隔离并且形成光通道。

Description

GaN基光耦合器
技术领域
本发明涉及GaN基光耦合器。
背景技术
存在许多情况，其中信号和数据在不形成直接欧姆电连接的情况下优选从一个器件或系统被传输到另一个。例如，所述器件可能是处于非常不同的电压电平，例如微处理器工作在相对低的电压以及开关器件工作在相对高的电压。在这种情况下，两个器件之间的链路必须被隔离以保护较低电压器件免受过压损坏。用于连接这样的器件的一个传统方式是光耦合器。光耦合器使用光来跨越提供极好电流隔离的电屏障发射信号或数据。光耦合器具有两个主要部件：例如砷化镓LED（发光二极管）的光发射器、和光接收器，例如光电二极管，光电晶体管，或光触发的双向触发二极管（light-triggered diac）。这两个部件被透明屏障隔开，该透明屏障防止该两个部件之间的电流流动，但允许光通过。使用GaN基工艺制造具有形成在同一管芯上的光发射器和光接收器的光耦合器是未知的。
发明内容
根据光耦合器的一个实施例，光耦合器包括设置在衬底上的GaN基光传感器和设置在与GaN基光传感器相同的衬底上的GaN基光源。在GaN基光传感器和GaN基光源之间插入透明材料。透明材料在GaN基光传感器和GaN基光源之间提供电流隔离并且形成光通道。
根据电光电路的一个实施例，该电光电路包括光耦合器，该光耦合器包括设置在衬底上的GaN基光传感器和设置在与GaN基光传感器相同的衬底上的GaN基光源，所述GaN基光传感器具有电气侧和光学侧，所述GaN基光源具有电气侧和光学侧。透明的电流隔离材料插入在GaN基光传感器和GaN基光源之间，并且在GaN基光传感器和GaN基光源的光学侧之间形成光通道。电光电路进一步包括电连接到GaN基光传感器的电气侧的电器件。
根据封装的一个实施例，该封装包括导电引线框和光耦合器。光耦合器包括设置在附着于引线框的衬底上的GaN基光传感器和设置在与GaN基光传感器相同的衬底上的GaN基光源，所述GaN基光传感器具有电气侧和光学侧，所述GaN基光源具有电气侧和光学侧。透明的电流隔离材料插入在GaN基光传感器和GaN基光源之间，并且在GaN基光传感器和GaN基光源的光学侧之间形成光通道。该封装进一步包括电连接到GaN基光传感器的电气侧的电器件。
本领域技术人员在阅读下面的详细描述后并且在浏览附图后将认识到附加的特征和优点。
附图说明
图中的部件没有必要成比例，而是重点放在说明本发明的原理上。此外，在图中，相似的参考数字代表相应的部分。在图中：
图1示出了根据一个实施例的连接到集成电器件的GaN基光耦合器的透视截面图。
图2示出了连接到电器件的GaN基光耦合器的电路原理图。
图3示出了根据另一实施例的连接到集成电器件的GaN基光耦合器的透视截面图。
图4示出了根据一个实施例的连接到不同管芯上的电器件的GaN基光耦合器的透视截面图。
图5示出了根据另一个实施例的连接到不同管芯上的电器件的GaN基光耦合器的透视截面图。
具体实施方式
图1示出了光耦合器的一个实施例的截面图，所述光耦合器包括设置在衬底110上的GaN基光传感器100和设置在与GaN基光传感器100相同的衬底110上的GaN基光源120。如这里使用的术语“GaN基”意为相应器件或部件基于任何类型的GaN半导体工艺（例如与AlGaN结合的GaN，与InGaN结合的GaN等）被构造。在所有情况下，GaN基光传感器100和GaN基光源120均包括GaN作为各自结构的一部分并且形成在相同衬底110上。例如，成核层130可被形成在衬底110上。衬底110可以是任何适合的导电的（掺杂的）或非导电的（未掺杂的）材料、半导体或其它材料。在一个实施例中，衬底110包括硅、二氧化硅、SiC、碳或金刚石。可以使用其它类型的半导体或非半导体衬底。在使用硅衬底110的情况下，成核层130是AIN。对于SiC衬底110，成核层130可以是GaN或AlGaN。缓冲层132，例如GaN层，被形成在成核层130上，并且阻挡层134，例如AlGaN层，被形成在缓冲层132上。根据器件类型和构造，可以使用其它和/或额外的GaN基化合物半导体层。
在GaN基光传感器100的区域中，提供了n+ GaN层136。光敏层138，例如本征GaN层，被设置在GaN基光传感器100的区域中的n+ GaN层136上，并且p- GaN层140被形成在光敏层138上。在本实施例中，n+ GaN层136、光敏层138、和p- GaN层140共同形成光电二极管。可以使用其它光传感器，例如光电晶体管或双向触发二极管。
在所有情况下，透明材料150被插入在GaN基光传感器100和GaN基光源120之间。透明材料150提供GaN基光传感器100和GaN基光源120之间的电流隔离。电流隔离的量至少部分地通过插入在GaN基光传感器100和GaN基光源120之间的材料150的材料类型和厚度（t）来被确定。在一个实施例中，透明材料150是二氧化硅。一般而言，透明材料150足够厚并且具有足够的材料以在GaN基光传感器100和GaN基光源120之间提供期望的电流隔离。在一个实施例中，透明材料150提供了高达10kV的电流隔离。可以使用其它类型的透明的和合适的电镀材料，例如类金刚石碳。在所有情况下，透明材料150也在GaN基光传感器100和GaN基光源120之间形成光通道。
这样来自GaN基光源120的光学侧122的光输出可以容易地穿过透明材料150到达GaN基光传感器100的光学侧102，如由图1中以波浪线示意性示出的光能量所指示的，同时在光传感器100和光源120之间保持足够的电隔离。在一个实施例中，GaN基光传感器100是包括p型GaN阳极层140、n型GaN阴极层136和插入在p型GaN层140和n型GaN层136之间的本征光敏GaN层138的光电二极管。本征光敏GaN层138形成光电二极管100的光学侧102，并且n型GaN阴极层136和p型GaN层140形成电气侧104。在一个实施例中，GaN基光源120是在发光二极管120的电气侧128处具有阳极和阴极接触124，126的GaN基发光二极管（LED）。LED 120的光学侧122面对GaN基光传感器100。LED 120响应于在LED 120的阳极和阴极接触124，126处的输入在光学侧122处产生光输出。光穿过中间透明材料150到达光传感器100，在这里光通过本征光敏GaN层138从光能转换成被使得在n型GaN阴极层136处可用的电能。
电器件160例如晶体管或无源器件被电连接到光传感器100的电气侧（阴极）104以形成例如如图1所示的电光电路。根据图1所示实施例，电器件160被设置在与GaN基光传感器100和GaN基光源120相同的衬底上并且是GaN基电器件。特别地根据本实施例，GaN基电器件是GaN基晶体管，例如具有栅极（G）、源极（S）、漏极（D）和沟道162的MOSFET(金属氧化物半导体场效应晶体管)或HEMT(高电子迁移率晶体管)。根据晶体管的类型，栅极可以或可以不与下面的沟道162绝缘。沟道162被设置在源极和漏极之间并且被栅极控制。还是根据本实施例，GaN基光传感器100是具有阳极140和阴极136的GaN基光电二极管。GaN基光电二极管100的阴极136通过设置在共同衬底110上的线或其它合适导体170电连接到GaN基晶体管160的栅极。隔离区域180，例如介电绝缘区域或注入区域，将GaN基光电二极管100与GaN基晶体管160的源极、漏极和沟道162分离。
使用任何适合的GaN基工艺的光电性能，晶体管和光耦合器能被如图1所示那样制造在相同的管芯101上。如上所述，GaN基晶体管160的栅极被连接到GaN基光电二极管100的阴极136。当LED 120发光的时候，光电二极管100为晶体管160的栅极电容充电以提高栅极-源极电压，导通晶体管160。当晶体管160关断时，光电二极管100停止充电并且内部放电器开关被自动闭合。这反过来迫使栅极放电。因此，栅极-源极电压迅速降低。GaN基晶体管的一个优点是较低的栅极电荷，产生相比硅工艺快得多的导通和关断过程。这样，使得直接驱动集成在与光耦合器相同管芯101上的GaN基晶体管成为可能。例如如图1所示，管芯101可以通过将管芯101附着到引线框180来被包含在封装中。引线框180提供到管芯101的必要的电连接，这是半导体封装领域中众所周知的，例如通过结合线、带连接等。如果衬底110形成通向电光电路的导电路径的一部分，管芯101的背面可被直接电连接到引线框180的导电区域。否则，衬底110是非导电的并且管芯101的背面附着于引线框180仅仅为了支撑并从管芯101去除废热能。
图2示出了对于包括附着于引线框180的集成的六引脚封装的相应的电路原理图。该封装具有一个无连接（N/C）引脚。该封装进一步包括连接到GaN基LED 120的相应阳极和阴极接触124，125的阳极（Anode）和阴极（Cathode）引脚。其余的三个引脚控制GaN基晶体管160的操作。特别地，提供了源极（Source）、漏极（Drain）和栅极（Gate）引脚。源极和漏极引脚分别连接到晶体管160的源极和漏极。栅极引脚连接到GaN基光电二极管的阳极140，GaN基光电二极管的阴极136被连接到如上面所述的并且在图1中示出的晶体管160的栅极。
图3示出了具有集成电器件160的GaN基光耦合器的另一实施例的截面图。图3所示实施例和图1所示实施例相似，然而在图1中GaN基光源120被点附着于覆盖GaN基光传感器100的背对衬底110的顶面的透明材料150的区域。在这种情况下，光通道被设置在GaN基光源120和GaN基光传感器100的顶面之间。在图3中，GaN基光源120被点附着于覆盖GaN基光传感器100的侧壁的透明材料150的区域。在本实施例中，光通道被设置在GaN基光源120和GaN基光传感器100的所述侧壁之间。在两种情况下，连接到光传感器100的电器件160都被形成在与光耦合器相同的衬底110上并因此是基于与光源120和光传感器100相同的GaN工艺。根据这些实施例，电器件160在相同的管芯上与光耦合器相集成。
图4示出了具有非集成的电器件200的GaN基光耦合器的实施例的截面图。根据本实施例，电器件200与GaN基光耦合器相比被制造在单独的管芯201上。仅仅是为了便于解释，在图4中GaN基光传感器100被示为GaN基光电二极管并且非集成的电器件200被示为GaN基晶体管。GaN基光电二极管100的阴极136通过结合线或其它类型的外部管芯电连接210被电连接到GaN基晶体管200的栅极（G）。根据晶体管的类型，栅极可以或可以不与下面的沟道202绝缘。沟道202被设置在源极（S）和漏极（D）之间并且由栅极控制。器件隔离区域220，例如介电材料或注入区域，将晶体管200与形成在相同管芯上的其它器件隔离。
晶体管管芯201从例如成核层232（诸如在与光耦合器衬底110分离的衬底230上形成的AlN层）被构造。缓冲层234，例如GaN层，被形成在成核层232上，并且阻挡层236，例如AlGaN层，被形成在缓冲层234上。取决于器件类型和构造，其它GaN基化合物半导体层可被用于构造晶体管200。在其它实施例中，晶体管200基于除了GaN以外的III-IV工艺，例如GaAs或SiC，或者基于Si工艺，例如，如MOSFET。电器件200不需要是晶体管，而是可以是无源器件，例如电阻器或电容器。可以使用其它光传感器来代替光电二极管，例如光电晶体管或双向触发二极管。在所有情况下，如图4中所示通过将每个单独的管芯201，203附着于相同的引线框240，光耦合器管芯203和电器件管芯201都能被包括在相同的封装中。引线框240以封装半导体领域中众所周知的适当的方式被结构化以给光耦合器管芯203和电器件管芯201两者提供必要的电连接。
图5示出了与图4所示实施例相似的具有非集成的电器件200的GaN基光耦合器的实施例的截面图，然而非集成的电器件管芯201附着于一个引线框300并且GaN基光耦合器管芯203附着于不同的引线框310。引线框300，310能被包括在相同的封装或不同的封装中。
空间相对术语，例如“在…下面”，“下面”，“下部”，“在…上面”，“上部”等等，用来易于描述以解释一个元件相对于第二元件的定位。这些术语旨在除了包括与图中描述的那些取向不同的取向之外还包括器件的不同取向。进一步地，例如“第一”，“第二”等的术语也用来描述不同的元件、区域、部分等等并且也并不旨在是限制性的。贯穿该说明书类似的术语指代类似的元件。
如此处使用的，术语“具有”，“包含”，“包括”，“含有”等等是表示所述元件或特征的存在的开放式术语，而并不排除附加元件或特征。冠词“一”，“一个”和“该”旨在包括复数以及单数，除非上下文清楚地另有指示。
认识到上面的变型和应用的范围，应该理解本发明并不被前面的描述限制，其也不被附图限制。相反，本发明仅仅被下面的权利要求和它们的法律等效物限制。

Claims (22)

1.一种光耦合器，包括：
设置在衬底上的GaN基光传感器；
设置在与所述GaN基光传感器相同的衬底上的GaN基光源；和
插入在GaN基光传感器和GaN基光源之间的透明材料，该透明材料在GaN基光传感器和GaN基光源之间提供电流隔离并且形成光通道。
2.根据权利要求1的光耦合器，其中所述GaN基光传感器是包括p型GaN层、n型GaN层、和插入在p型GaN层和n型GaN层之间的本征GaN层的光电二极管。
3.根据权利要求1的光耦合器，其中GaN基光源附着于覆盖GaN基光传感器的背对衬底的侧面的透明材料的区域。
4.根据权利要求1的光耦合器，其中GaN基光源附着于覆盖GaN基光传感器的侧壁的透明材料的区域。
5.根据权利要求1的光耦合器，其中衬底包括硅、二氧化硅、碳或金刚石。
6.根据权利要求1的光耦合器，其中透明材料包括二氧化硅或类金刚石碳。
7.根据权利要求1的光耦合器，其中透明材料在GaN基光传感器和GaN基光源之间提供高达10kV的电流隔离。
8.一种电光电路，包括：
光耦合器，其包括：
设置在衬底上的GaN基光传感器，该GaN基光传感器具有电气侧和光学侧；
设置在与所述GaN基光传感器相同的衬底上的GaN基光源，该GaN基光源具有电气侧和光学侧；和
插入在GaN基光传感器和GaN基光源之间的透明电流隔离材料，该透明电流隔离材料在GaN基光传感器和GaN基光源的光学侧之间形成光通道；以及
电连接到GaN基光传感器的电气侧的电器件。
9.根据权利要求8的电光电路，其中电器件被设置在与所述GaN基光传感器和GaN基光源相同的衬底上，并且电器件是GaN基电器件。
10.根据权利要求9的电光电路，其中GaN基光传感器是具有阳极和阴极的GaN基光电二极管，其中GaN基电器件是具有栅极、源极、漏极和沟道的GaN基晶体管，该沟道被设置在源极和漏极之间并且由栅极控制，并且其中GaN基光电二极管的阴极电连接到GaN基晶体管的栅极。
11.根据权利要求10的电光电路，进一步包括将GaN基光电二极管与GaN基晶体管的源极、漏极和沟道分离的电绝缘体。
12.根据权利要求8的电光电路，其中电器件设置在与GaN基光传感器和GaN基光源不同的衬底上。
13.根据权利要求12的电光电路，其中电器件基于不同于GaN的半导体工艺。
14.根据权利要求8的电光电路，其中GaN基光源附着于覆盖GaN基光传感器的背对衬底的侧面的透明电流隔离材料的区域。
15.根据权利要求8的电光电路，其中GaN基光源附着于覆盖GaN基光传感器的侧壁的透明电流隔离材料的区域。
16.根据权利要求8的电光电路，其中透明电流隔离材料在GaN基光传感器和GaN基光源之间提供高达10kV的电流隔离。
17.一种封装，包括：
导电引线框，
光耦合器，其包括：
设置在附着于引线框的衬底上的GaN基光传感器，该GaN基光传感器具有电气侧和光学侧；
设置在与GaN基光传感器相同的衬底上的GaN基光源，该GaN基光源具有电气侧和光学侧；和
插入在GaN基光传感器和GaN基光源之间的透明电流隔离材料，透明电流隔离材料在GaN基光传感器和GaN基光源的光学侧之间形成光通道；以及
电连接到GaN基光传感器的电气侧的电器件。
18.根据权利要求17的封装，其中电器件被设置在与GaN基光传感器和GaN基光源不同的衬底上并且附着于不同于光耦合器的导电引线框。
19.根据权利要求18的封装，其中电器件基于不同于GaN的半导体工艺。
20.根据权利要求17的封装，其中电器件被设置在与GaN基光传感器和GaN基光源相同的衬底上，并且其中电器件是GaN基电器件。
21.根据权利要求20的封装，其中GaN基光传感器是具有阳极和阴极的GaN基光电二极管，其中GaN基电器件是具有栅极、源极、漏极和沟道的GaN基晶体管，该沟道被设置在源极和漏极之间并且由栅极控制，并且其中GaN基光电二极管的阴极电连接到GaN基晶体管的栅极。
22.根据权利要求21的封装，进一步包括将GaN基光电二极管与GaN基晶体管的源极、漏极和沟道分离的电绝缘体。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2642132C1 (ru) * 2016-07-20 2018-01-24 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Образования "Новосибирский Государственный Технический Университет" Оптоэлектронное устройство
US20210305449A1 (en) * 2020-03-27 2021-09-30 Harvatek Corporation Light source assembly, optical sensor assembly, and method of manufacturing a cell of the same

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9071152B2 (en) 2012-07-03 2015-06-30 Cognipower, Llc Power converter with demand pulse isolation
JP6038745B2 (ja) * 2013-08-22 2016-12-07 株式会社東芝 ダイオード回路およびｄｃ−ｄｃコンバータ
DE102016001387A1 (de) * 2016-02-09 2017-08-10 Azur Space Solar Power Gmbh Empfängerbaustein
WO2018063408A1 (en) * 2016-09-30 2018-04-05 Intel Corporation P-i-n diode and connected group iii-n device and their methods of fabrication
DE102017104735B4 (de) 2017-03-07 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
GB201709006D0 (en) * 2017-06-06 2017-07-19 Univ Court Univ Of Glasgow Method of fabricating a monolithic sensor device from a layered structure
DE102017007683B4 (de) * 2017-08-16 2020-05-07 Azur Space Solar Power Gmbh Empfängerbaustein
FR3077160B1 (fr) * 2018-01-19 2022-01-21 Commissariat Energie Atomique Dispositif optoelectronique comportant une grille et une cathode couplees l'une a l'autre
US10892755B2 (en) 2018-02-27 2021-01-12 Cognipower, Llc Driver circuitry for fast, efficient state transitions
US10554206B2 (en) 2018-02-27 2020-02-04 Cognipower, Llc Trigger circuitry for fast, low-power state transitions
US20200035862A1 (en) * 2018-07-26 2020-01-30 Bolb Inc. Light-emitting device with optical power readout
CN113646905A (zh) * 2019-04-18 2021-11-12 株式会社半导体能源研究所 固态继电器以及半导体装置
EP3772105A1 (en) 2019-07-30 2021-02-03 Bolb Inc. Light-emitting device with optical power readout
KR20210036199A (ko) * 2019-09-25 2021-04-02 삼성전자주식회사 반도체 장치, 그 제조 방법, 및 이를 포함하는 디스플레이 장치
KR20210041931A (ko) * 2019-10-08 2021-04-16 삼성전자주식회사 반도체 장치, 그 제조 방법 및 이를 포함하는 디스플레이 장치
US11322542B2 (en) * 2020-03-27 2022-05-03 Harvatek Corporation Light-emitting diode (LED) assembly and method of manufacturing an LED cell of the same
US20230275075A1 (en) * 2021-12-23 2023-08-31 Intematix Corporation Semiconductor Optocoupler
TWI832541B (zh) * 2022-11-07 2024-02-11 台亞半導體股份有限公司 光耦合器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1215503A (zh) * 1997-01-31 1999-04-28 松下电子工业株式会社 发光元件与半导体发光装置及其制造方法
US6458614B1 (en) * 1998-03-26 2002-10-01 Murata Manufacturing Co., Opto-electronic integrated circuit
US20070262346A1 (en) * 2006-05-10 2007-11-15 Ralf Otremba Electronic Component and a Method for its Production
US20100301347A1 (en) * 2009-06-01 2010-12-02 Jinwook Chung Wafer bonding technique in nitride semiconductors

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1215503A (zh) * 1997-01-31 1999-04-28 松下电子工业株式会社 发光元件与半导体发光装置及其制造方法
US6458614B1 (en) * 1998-03-26 2002-10-01 Murata Manufacturing Co., Opto-electronic integrated circuit
US20070262346A1 (en) * 2006-05-10 2007-11-15 Ralf Otremba Electronic Component and a Method for its Production
US20100301347A1 (en) * 2009-06-01 2010-12-02 Jinwook Chung Wafer bonding technique in nitride semiconductors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2642132C1 (ru) * 2016-07-20 2018-01-24 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Образования "Новосибирский Государственный Технический Университет" Оптоэлектронное устройство
US20210305449A1 (en) * 2020-03-27 2021-09-30 Harvatek Corporation Light source assembly, optical sensor assembly, and method of manufacturing a cell of the same
US11658257B2 (en) * 2020-03-27 2023-05-23 Harvatek Corporation Light source assembly, optical sensor assembly, and method of manufacturing a cell of the same

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Application publication date: 20131113