CN103368511A - 跨导调整电路、电路装置及电子设备 - Google Patents

跨导调整电路、电路装置及电子设备 Download PDF

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Publication number
CN103368511A
CN103368511A CN2013101238582A CN201310123858A CN103368511A CN 103368511 A CN103368511 A CN 103368511A CN 2013101238582 A CN2013101238582 A CN 2013101238582A CN 201310123858 A CN201310123858 A CN 201310123858A CN 103368511 A CN103368511 A CN 103368511A
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CN
China
Prior art keywords
signal
circuit
output
voltage level
voltage
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Pending
Application number
CN2013101238582A
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English (en)
Chinese (zh)
Inventor
三泽利之
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Seiko Epson Corp
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Seiko Epson Corp
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Publication of CN103368511A publication Critical patent/CN103368511A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/04—Frequency selective two-port networks
    • H03H11/0422—Frequency selective two-port networks using transconductance amplifiers, e.g. gmC filters
    • H03H11/0466—Filters combining transconductance amplifiers with other active elements, e.g. operational amplifiers, transistors, voltage conveyors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197—Pl types
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/04—Frequency selective two-port networks
    • H03H11/0422—Frequency selective two-port networks using transconductance amplifiers, e.g. gmC filters
    • H03H11/0444—Simulation of ladder networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/04—Frequency selective two-port networks
    • H03H11/0422—Frequency selective two-port networks using transconductance amplifiers, e.g. gmC filters
    • H03H11/0472—Current or voltage controlled filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45366—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their gates only, e.g. in a cascode dif amp, only those forming the composite common source transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45512—Indexing scheme relating to differential amplifiers the FBC comprising one or more capacitors, not being switched capacitors, and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45594—Indexing scheme relating to differential amplifiers the IC comprising one or more resistors, which are not biasing resistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45644—Indexing scheme relating to differential amplifiers the LC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45674—Indexing scheme relating to differential amplifiers the LC comprising one current mirror
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45702—Indexing scheme relating to differential amplifiers the LC comprising two resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H2007/0192—Complex filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/04—Frequency selective two-port networks
    • H03H2011/0494—Complex filters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Networks Using Active Elements (AREA)
  • Amplifiers (AREA)
CN2013101238582A 2012-04-10 2013-04-10 跨导调整电路、电路装置及电子设备 Pending CN103368511A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012089063A JP2013219569A (ja) 2012-04-10 2012-04-10 トランスコンダクタンス調整回路、回路装置及び電子機器
JP2012-089063 2012-04-10

Publications (1)

Publication Number Publication Date
CN103368511A true CN103368511A (zh) 2013-10-23

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Country Link
US (1) US9013234B2 (enExample)
JP (1) JP2013219569A (enExample)
CN (1) CN103368511A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110322673A (zh) * 2018-03-30 2019-10-11 温州有达电气有限公司 一种低延迟的智能墙壁专用开关
CN111281396A (zh) * 2020-01-22 2020-06-16 哈尔滨理工大学 胸腹表面呼吸运动信号超分辨方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104092360B (zh) * 2014-06-30 2017-05-17 成都芯源系统有限公司 跨导调整电路、跨导型误差放大单元及开关型功率变换器
US9647618B1 (en) * 2016-03-30 2017-05-09 Qualcomm Incorporated System and method for controlling common mode voltage via replica circuit and feedback control
US10637441B1 (en) * 2018-11-30 2020-04-28 Nxp B.V. Polyphase Gm-C filter using Gm cells
US11349443B2 (en) * 2019-09-10 2022-05-31 Mediatek Inc. Operational amplifier using single-stage amplifier with slew-rate enhancement and associated method
US11381207B2 (en) * 2020-04-02 2022-07-05 Stmicroelectronics International N.V. Apparatus and method for an analog to digital converter

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1215815A2 (en) * 2000-12-05 2002-06-19 Nippon Telegraph and Telephone Corporation Transconductance amplifier, filter using the transconductance amplifier and tuning circuitry for transconductance amplifier in the filter
CN1427480A (zh) * 2001-12-20 2003-07-02 皇家菲利浦电子有限公司 跨导基本上恒定的电路
CN102017399A (zh) * 2008-04-07 2011-04-13 高通股份有限公司 具有偏置和功率控制方面的放大器设计
CN102340284A (zh) * 2010-07-23 2012-02-01 复旦大学 一种低电源电压跨导可调的恒定跨导的轨到轨输入运算放大器

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JP3380347B2 (ja) 1995-01-27 2003-02-24 旭化成マイクロシステム株式会社 Ｇｍ−Ｃフィルタ
US6262624B1 (en) * 2000-05-19 2001-07-17 Advanced Micro Devices, Inc. Phase delay based filter transconductance (Gm/C) compensation circuit
JP4227320B2 (ja) * 2001-09-04 2009-02-18 新日本無線株式会社 複素バンドパスフィルタ
JP3578133B2 (ja) 2001-11-06 2004-10-20 日本電信電話株式会社 トランスコンダクタンスアンプ調整回路
JP2003188683A (ja) * 2001-12-19 2003-07-04 Sony Corp アナログフィルタ回路およびこれを用いたディスク装置
US7051063B2 (en) * 2002-05-03 2006-05-23 Atheros Communications, Inc. Integrated low power channel select filter having high dynamic range and bandwidth
JP2005223439A (ja) 2004-02-03 2005-08-18 Nec Electronics Corp 周波数設定回路
US7319731B2 (en) 2004-02-05 2008-01-15 Broadcom Corporation High precision continuous time gmC BPF tuning
JP4731462B2 (ja) 2006-12-27 2011-07-27 ルネサスエレクトロニクス株式会社 受信装置
JP4238935B1 (ja) 2007-08-28 2009-03-18 ダイキン工業株式会社 直接形交流電力変換装置
JP5782762B2 (ja) 2011-03-16 2015-09-24 セイコーエプソン株式会社 トランスコンダクタンス調整回路、回路装置及び電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1215815A2 (en) * 2000-12-05 2002-06-19 Nippon Telegraph and Telephone Corporation Transconductance amplifier, filter using the transconductance amplifier and tuning circuitry for transconductance amplifier in the filter
CN1427480A (zh) * 2001-12-20 2003-07-02 皇家菲利浦电子有限公司 跨导基本上恒定的电路
CN102017399A (zh) * 2008-04-07 2011-04-13 高通股份有限公司 具有偏置和功率控制方面的放大器设计
CN102340284A (zh) * 2010-07-23 2012-02-01 复旦大学 一种低电源电压跨导可调的恒定跨导的轨到轨输入运算放大器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110322673A (zh) * 2018-03-30 2019-10-11 温州有达电气有限公司 一种低延迟的智能墙壁专用开关
CN111281396A (zh) * 2020-01-22 2020-06-16 哈尔滨理工大学 胸腹表面呼吸运动信号超分辨方法

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JP2013219569A (ja) 2013-10-24
US20130265106A1 (en) 2013-10-10

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Application publication date: 20131023