CN103367303A - High-power IGBT (Insulated Gate Bipolar Transistor) module with integrated gate pole resistor layout - Google Patents
High-power IGBT (Insulated Gate Bipolar Transistor) module with integrated gate pole resistor layout Download PDFInfo
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- CN103367303A CN103367303A CN2013102787002A CN201310278700A CN103367303A CN 103367303 A CN103367303 A CN 103367303A CN 2013102787002 A CN2013102787002 A CN 2013102787002A CN 201310278700 A CN201310278700 A CN 201310278700A CN 103367303 A CN103367303 A CN 103367303A
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- liner plate
- gate electrode
- electrode resistance
- gate pole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention discloses a high-power IGBT (Insulated Gate Bipolar Transistor) module with integrated gate pole resistor layout. The IGBT module comprise a PCB (Printed Circuit Board), a bus bar and a lining plate, wherein the lining plate and the PCB are connected through a gate pole spring wire; and a gate pole resistor is welded directly on the PCB. The high-power IGBT module has the advantages of simple and compact structure, low cost, capability of increasing the welding process efficiency of the gate pole resistor, simplification of the lining plate circuit design, and the like.
Description
Technical field
The present invention is mainly concerned with IGBT modular design field, refers in particular to a kind of high-power IGBT module of integrated gate electrode resistance distribution.
Background technology
Current, mainly comprise liner plate, igbt chip, gate electrode resistance, power terminal etc. in the IGBT module.As shown in Figure 1, for having the liner plate 5 of typical IGBT now.In IGBT module package process, in order to control the switching speed of igbt chip, usually need to be at each igbt chip gate pole gate electrode resistance 2 in parallel.Existing methodical step is: at first, according to the circuitous pattern on the liner plate 5, with silk-screen printing technique with the corresponding region of Solder-Paste Printing at liner plate 5.Secondly, utilize the adhesiveness of soldering paste, gate electrode resistance 2 is attached to the corresponding zone that is printed with soldering paste.At last, utilize welding procedure that gate electrode resistance 2 is welded in the corresponding liner plate circuit.
But, current with gate electrode resistance 2 design on IGBT liner plate 5, mainly contain following some problem: 1, packaging technology efficient is low: because gate electrode resistance 2 is very little, be attached to by artificial means on the IGBT liner plate 5 inefficiency.2, affect processing compatibility: must use the soldering paste welding procedure at liner plate 5 welding gate electrode resistances 2, can't use the weld tabs welding procedure, affect the compatibility of packaging technology.3, limited the layout designs of IGBT liner plate 5: gate electrode resistance 2 is welded on the liner plate 5, has increased the complexity of liner plate 5 layouts.Because standard liner plate 5 sizes are fixed, gate electrode resistance 2 can take liner plate 5 circuit, affects the diversity of liner plate 5 layouts simultaneously.
Summary of the invention
The technical problem to be solved in the present invention just is: for the technical problem that prior art exists, the invention provides a kind of simple and compact for structure, with low cost, can improve gate electrode resistance welding procedure efficient, simplify the high-power IGBT module of the integrated gate electrode resistance distribution of liner plate circuit design.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of high-power IGBT module of integrated gate electrode resistance distribution comprises pcb board, busbar and liner plate, and described liner plate links to each other by the gate pole spring wire with pcb board, directly is welded with gate electrode resistance on the described pcb board.
As a further improvement on the present invention:
Described gate electrode resistance adopts pinned resistance.
Compared with prior art, the invention has the advantages that:
1, the present invention utilizes existing pcb board in the IGBT module, integral gate resistance.Utilize ripe PCB technique welding gate electrode resistance, then utilize spring lead-in wire connection PCB circuit and liner plate circuit, realize that gate pole is interconnected, can improve the process efficiency of gate electrode resistance welding.
2, the present invention peels off gate electrode resistance from liner plate, need not to weld gate electrode resistance on the liner plate, can increase the compatibility of liner plate welding butt welding blade technolgy.
3, the present invention need not to weld gate electrode resistance at liner plate, can simplify the liner plate circuit design, and the space of more liner plate layout designs is arranged.
Description of drawings
Fig. 1 is the structural principle schematic diagram of liner plate in the prior art.
Fig. 2 is the structural principle schematic diagram of IGBT module of the present invention.
Fig. 3 is the structural principle schematic diagram of liner plate among the present invention.
Fig. 4 is the structural principle schematic diagram of pcb board among the present invention.
Marginal data:
1, pcb board; 2, gate electrode resistance; 3, busbar; 4, gate pole spring wire; 5, liner plate.
Embodiment
Below with reference to Figure of description and specific embodiment the present invention is described in further details.
Such as Fig. 2, Fig. 3 and shown in Figure 4, the high-power IGBT module of integrated gate electrode resistance distribution of the present invention comprises pcb board 1, busbar 3 and liner plate 5, and liner plate 5 links to each other by gate pole spring wire 4 with pcb board 1, and gate electrode resistance 2 is directly welded on the pcb board 1.This gate electrode resistance 2 can adopt pinned resistance, utilizes reflow soldering process to realize the welding of gate electrode resistance 2.Because ripe integrated circuit technology, technique at pcb board 1 welding gate electrode resistance 2 is very easy to, efficient is very high, this has just been avoided welding the inconvenience that gate electrode resistances 2 bring at liner plate 5, saved the process at liner plate 5 welding gate electrode resistances 2, can greatly improve packaging technology efficient, guarantee simultaneously the effective adjusting of resistance to igbt chip switching speed on the liner plate.
In concrete application example, the manufacturing process of IGBT module of the present invention is:
1, the welding of pcb board 1 and gate electrode resistance 2: the corresponding gate electrode resistance welding region of gate circuit region division on pcb board 1, insert required pinned resistance, utilize reflow soldering process to realize the welding of gate electrode resistance 2.
2, the vacuum back-flow of liner plate 5 weldering: finish the welding of chip and liner plate 5, owing to need not to weld gate electrode resistance 2 on the liner plate 5, can simplify the circuit design on the liner plate 5.Simultaneously, liner plate 5 is standard size, can provide more zone for other circuit on the liner plate 5 behind the simplification gate circuit.For example can increase the Bonding zone, realize tangent line on liner plate 5.Owing to there not being the welding of gate electrode resistance 2 on the liner plate 5 of the present invention, in liner plate 5 welding processes, can be suitable for the weld tabs welding procedure, improve packaging technology to the whole compatibility of weld tabs welding procedure.
3, substrate vacuum back-flow weldering: finish the welding of liner plate 5, busbar 3, gate pole spring wire 4 and busbar 3.Identical with existing technique, utilize frock that liner plate 5, busbar 3 and gate pole spring wire 4 are positioned, realize the interconnected of modular circuit.
4, PCB installs: finish the welding of pcb board 1 and gate pole spring wire 4.Identical with existing technique, gate pole spring wire 4 is inserted circuit corresponding on the pcb boards 1, weld realize interconnected.
Below only be preferred implementation of the present invention, protection scope of the present invention also not only is confined to above-described embodiment, and all technical schemes that belongs under the thinking of the present invention all belong to protection scope of the present invention.Should be pointed out that for those skilled in the art, the some improvements and modifications not breaking away under the principle of the invention prerequisite should be considered as protection scope of the present invention.
Claims (2)
1. the high-power IGBT module of an integrated gate electrode resistance distribution, comprise pcb board (1), busbar (3) and liner plate (5), it is characterized in that, described liner plate (5) links to each other by gate pole spring wire (4) with pcb board (1), directly is welded with gate electrode resistance (2) on the described pcb board (1).
2. the high-power IGBT module of integrated gate electrode resistance distribution according to claim 1 is characterized in that, described gate electrode resistance (2) adopts pinned resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102787002A CN103367303A (en) | 2013-07-04 | 2013-07-04 | High-power IGBT (Insulated Gate Bipolar Transistor) module with integrated gate pole resistor layout |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102787002A CN103367303A (en) | 2013-07-04 | 2013-07-04 | High-power IGBT (Insulated Gate Bipolar Transistor) module with integrated gate pole resistor layout |
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| Publication Number | Publication Date |
|---|---|
| CN103367303A true CN103367303A (en) | 2013-10-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2013102787002A Pending CN103367303A (en) | 2013-07-04 | 2013-07-04 | High-power IGBT (Insulated Gate Bipolar Transistor) module with integrated gate pole resistor layout |
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| CN (1) | CN103367303A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304619A (en) * | 2014-05-28 | 2016-02-03 | 株洲南车时代电气股份有限公司 | IGBT lining board structure and preparation method thereof |
| CN113053856A (en) * | 2019-12-26 | 2021-06-29 | 湖南国芯半导体科技有限公司 | Method and structure for preventing silicon chip resistor from partial discharge failure and power semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1471730A (en) * | 2001-01-17 | 2004-01-28 | ���µ�����ҵ��ʽ���� | Electronic circuit device and method for manufacturing the same |
| CN102569271A (en) * | 2011-12-28 | 2012-07-11 | 嘉兴斯达微电子有限公司 | High-reliability high-power insulated gate bipolar transistor (IGBT) module |
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2013
- 2013-07-04 CN CN2013102787002A patent/CN103367303A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1471730A (en) * | 2001-01-17 | 2004-01-28 | ���µ�����ҵ��ʽ���� | Electronic circuit device and method for manufacturing the same |
| CN102569271A (en) * | 2011-12-28 | 2012-07-11 | 嘉兴斯达微电子有限公司 | High-reliability high-power insulated gate bipolar transistor (IGBT) module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304619A (en) * | 2014-05-28 | 2016-02-03 | 株洲南车时代电气股份有限公司 | IGBT lining board structure and preparation method thereof |
| CN113053856A (en) * | 2019-12-26 | 2021-06-29 | 湖南国芯半导体科技有限公司 | Method and structure for preventing silicon chip resistor from partial discharge failure and power semiconductor device |
| CN113053856B (en) * | 2019-12-26 | 2024-07-02 | 湖南国芯半导体科技有限公司 | Method and structure for preventing silicon chip resistor from partial discharge failure and power semiconductor device |
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Application publication date: 20131023 |