CN103346066A - Chemical dry-method etching method and semiconductor device forming method - Google Patents
Chemical dry-method etching method and semiconductor device forming method Download PDFInfo
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- CN103346066A CN103346066A CN2013102613091A CN201310261309A CN103346066A CN 103346066 A CN103346066 A CN 103346066A CN 2013102613091 A CN2013102613091 A CN 2013102613091A CN 201310261309 A CN201310261309 A CN 201310261309A CN 103346066 A CN103346066 A CN 103346066A
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Abstract
The invention provides a chemical dry-method etching method and a semiconductor device forming method. The chemical dry-method etching method comprises the following steps that a chemical dry-method etching machine is provided, wherein the chemical dry-method etching machine comprises a quartz glass tube; the quartz glass tube is subjected to dehydroxylation processing; the chemical dry-method etching machine is used for conducting dry-method etching. According to the chemical dry-method etching method and the semiconductor device forming method, the quartz glass tube in CDE equipment can be prevented from rupturing, and the etching rate and the yield of wafers can be increased.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate in particular to the formation method of a kind of chemical drying method engraving method and semiconductor device.
Background technology
In field of semiconductor manufacture, etch process is a kind of technical process of selectively removing material.Etch process mainly is divided into these two kinds of dry etching and wet etchings.Wherein, dry etching is the main method of etch device under sub-micron, the deep-submicron size, it is that crystal column surface is exposed to the plasma that produces in the gaseous state, the window of plasma by leaving in the graphical mask on the wafer, react with silicon chip, thereby remove the surfacing that exposes.
Particularly, dry etching is divided into three kinds again: physical property etching, chemistry etching and physical chemistry etching.Wherein: the physical property etching is called sputter etching again, and the general using inert gas bombards silicon chip surface under highfield, and directivity is very strong, can accomplish anisotropic etching, and can not carry out selective etch; Chemistry etching (hereinafter referred to as the chemical drying method etching) utilizes the reactive element (free radical and reaction of atomic) of plasma generation and the material of crystal column surface to react, the volatility product that produces in the reaction is taken away by vacuum pump, thereby realizes the etching purpose; The physical chemistry etching then takes into account physical property etching and the etched double action of chemistry.
The etched application of chemical drying method is mainly eat-back (Source poly etch back) at domatic polysilicon etching (Slope poly etch), active polysilicon, is remembered the circular etching in bottom (Bottom rounding etch) of polysilicon etching (Memory poly etch), polysilicon thready pulse etching (Poly stringer etch), nitride thready pulse etching (Nitride stringer etch) and power device etc.
More can be that 102496561A, open day are the Chinese patent application on June 13rd, 2012 with reference to publication number about the etched technology of chemical drying method.
Chemical drying method etching machine (Chemical Dry Etch, CDE) realization are adopted in the chemical drying method etching more in the prior art.All comprise quartz glass tube in the CDE equipment, etching gas feeds in this quartz glass tube, thereby etching gas and quartz glass tube go out positive and negative ion by microwave (Microwave) ionization, and these positive and negative ion and wafer react, thereby realize the etching to wafer.
But, adopting above-mentioned CDE equipment to carry out in the etched process, etch-rate arbitrarily descend (random drop) even the phenomenon of wafer loss (scrap) take place easily.In addition, the quartz glass tube situation of (broken) of also breaking easily.
Therefore, when carrying out the chemical drying method etching, how to improve etch-rate, guarantee the yield of wafer, and avoid quartz glass tube to break just becoming one of those skilled in the art's problem demanding prompt solution.
Summary of the invention
The problem that the present invention solves provides the formation method of a kind of chemical drying method engraving method and semiconductor device, can avoid the quartz glass tube in the CDE equipment to break, and can improve the yield of etch-rate and wafer.
For addressing the above problem, the invention provides a kind of chemical drying method engraving method, comprising:
The chemical drying method etching machine is provided, and described chemical drying method etching machine comprises quartz glass tube;
Described quartz glass tube is carried out deshydroxy to be handled;
Adopt described chemical drying method etching machine to carry out dry etching.
Optionally, described deshydroxy is handled and is comprised: adopt hydrofluoric acid that described quartz glass tube is cleaned.
Optionally, the percent by volume of described hydrofluoric acid is more than or equal to 10% and be less than or equal to 80%.
Optionally, described deshydroxy time of handling is more than or equal to 10 minutes and be less than or equal to 30 minutes.
Optionally, adopt hydrofluoric acid described quartz glass tube is cleaned after and carrying out dry etching before, described method also comprises: the described quartz glass tube of employing washed with de-ionized water.
Optionally, after adopting the described quartz glass tube of washed with de-ionized water and before carrying out dry etching, described method also comprises: described quartz glass tube is dried processing.
Optionally, the temperature that described oven dry is handled comprises 80 ℃～110 ℃, the time comprises 30 minutes～and 100 minutes.
Optionally, described deshydroxy is handled and is comprised: described quartz glass tube was placed 2 hours～4 hours in 1000 ℃～1200 ℃ environment.
Optionally, carrying out described dry etching comprises: domatic polysilicon etching, active polysilicon eat-back, remember one or more in the circular etching in bottom of polysilicon etching, the etching of polysilicon thready pulse, the etching of nitride thready pulse or power device.
In order to address the above problem, the present invention also provides a kind of formation method that comprises the semiconductor device of above-mentioned chemical drying method engraving method.
Compared with prior art, technical scheme of the present invention has the following advantages: before employing chemical drying method etching machine carries out dry etching, earlier the quartz glass tube in the chemical drying method etching machine being carried out deshydroxy handles, thereby can reduce or remove quartz glass tube-surface or inner hydroxyl radical free radical content, avoid being formed on and form bubble in the quartz glass tube, when finally the chemical drying method etching machine after adopting the deshydroxy processing carries out dry etching, can avoid the quartz glass tube in the CDE equipment to break, the yield of wafer can be improved, and the stability of etch-rate can be improved.
Further, can realize the deshydroxy processing by the mode that adopts hydrofluoric acid that described quartz glass tube is cleaned, hydrofluoric acid can displace quartz glass tube-surface or inner hydroxyl radical free radical, and can not react with quartz glass tube, thereby technology is simple, and cost is low.
Further, realize the deshydroxy processing in 2 hours～4 hours thereby also described quartz glass tube can be placed in 1000 ℃～1200 ℃ environment, thereby can further simplify technology, and reduce cost, improve the fail safe of deshydroxy.
Description of drawings
Fig. 1 is the schematic diagram of quartz glass tube;
Fig. 2 is the schematic flow sheet of chemical drying method engraving method one execution mode of the present invention;
Fig. 3 is the schematic flow sheet of chemical drying method engraving method one embodiment of the present invention
Fig. 4 is the schematic flow sheet of another embodiment of chemical drying method engraving method of the present invention.
Embodiment
In the prior art, when employing comprises the chemical drying method etching machine etched wafer of quartz glass tube, the general any reduction of etch-rate, and the phenomenon of wafer loss, quartz glass tracheal rupture takes place easily.
In the face of above-mentioned defective, the inventor is through discovering: with reference to shown in Figure 1, the surface of quartz glass tube 1 and inside exist great amount of hydroxy group free radical (free hydroxyl radical, OH
-) 2, described hydroxyl radical free radical 2 forms at least in the following manner: protective gas hydrogen and SiO when forming quartz glass
2Reaction; Water and the SiO of the parcel body weight of quartzy mineral
2Reaction; Come from quartzy and silica raw ore.In addition, when hydroxyl radical free radical 2 quantity of quartz glass tube 1 inner a certain position are too many, also can in quartz glass tube 1, gather and be bubble (bubble) 3.
The inventor finds after further research: quartz glass tube 1 is as the important component part of CDE equipment, and before using, hydroxyl radical free radical 2 wherein is inevitable.When employing comprises that the quartz glass tube 1 of great amount of hydroxy group free radical 2 carries out etching, under the effect of microwave and high temperature (greater than 45 ℃), can produce following two defectives:
The first, hydroxyl radical free radical 2 can with plasma in free radical react, thereby make etch-rate the decline of rule occur having no, even the risk of wafer loss can appear;
The second, be accumulated in the phenomenon that the bubble 3 in the quartz glass tube 1 can cause quartz glass tube 1 to break.
Before the inventor carries out above-mentioned research, those skilled in the art also do not know reason that etch-rate decline, wafer loss or quartz glass tube 1 break and the relation between the hydroxyl radical free radical 2, therefore namely ignore 2 pairs of etched influences of hydroxyl radical free radical in the quartz glass tube 1, also never taked any measure will reduce or eliminate hydroxyl radical free radical 2 in the quartz glass tube 1.
On the basis of above-mentioned research, the inventor is through further discovering: can be before using CDE equipment, earlier wherein quartz glass tube is carried out deshydroxy and handle, thereby reduce or eliminate hydroxyl radical free radical in the quartz glass tube as far as possible, remove bubble wherein.Finally after deshydroxy was handled, etch-rate can be stabilized in a numerical value all the time, and quartz glass tube never breaks, and the yield of wafer also significantly improves.
Therefore, present embodiment provides a kind of chemical drying method engraving method, with reference to shown in Figure 2, comprising:
Step S11 provides the chemical drying method etching machine, and described chemical drying method etching machine comprises quartz glass tube;
Step S12 carries out deshydroxy to described quartz glass tube and handles
Step S13 adopts described chemical drying method etching machine to carry out dry etching.
Present embodiment can reduce or remove quartz glass tube-surface or inner hydroxyl radical free radical content, avoid in quartz glass tube, forming bubble, when finally the chemical drying method etching machine after adopting the deshydroxy processing carries out dry etching, can avoid the quartz glass tube in the CDE equipment to break, the yield of wafer can be improved, and the stability of etch-rate can be improved.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing specific embodiments of the invention are described in detail.
With reference to shown in Figure 3, present embodiment one embodiment provides a kind of chemical drying method engraving method, may further comprise the steps.
Step S110 provides the chemical drying method etching machine, and described chemical drying method etching machine comprises quartz glass tube.
Do not limit the concrete structure of chemical drying method etching machine in the present embodiment, so long as the CDE equipment that comprises quartz glass tube is all within protection scope of the present invention.
Because the restriction of the manufacture craft of quartz glass comprises a large amount of hydroxyl radical free radicals inevitably, and bubble phenomenon may occur in the described quartz glass tube.
Step S120 adopts hydrofluoric acid that described quartz glass tube is cleaned.
The purpose that adopts hydrofluoric acid solution that quartz glass tube is cleaned in the present embodiment is to carry out dehydrogenation and handles, namely significantly reduce or remove the hydroxyl radical free radical of quartz glass tube-surface or inside, along with the minimizing of hydroxyl radical free radical quantity, the bubble of quartz glass tube inside also disappears thereupon.And then when this CDE equipment of subsequent applications, on the one hand, the free radical in the plasma with regard to not can with quartz glass tube in hydroxyl radical free radical react, thereby can not influence etch-rate, make etch-rate to stablize, the yield of wafer also can significantly improve; On the other hand, because quartz glass tube inside does not have bubble, so there is not the risk of breaking in quartz glass tube yet.
Described hydrofluoric acid solution can react with hydroxyl radical free radical, thereby displaces the hydroxyl radical free radical in the quartz glass tube, and hydrofluoric acid solution can not react with quartz material simultaneously, namely can not exert an influence to quartz material.
The course of reaction of described hydrofluoric acid solution and hydroxyl radical free radical is: HF+OH
-=F
-+ H
2O, hydroxyl radical free radical wherein changes water into.
Particularly, the percent by volume of described hydrofluoric acid can and be less than or equal to 80% more than or equal to 10%, as: 10%, 20%, 50%, 70% or 80% etc.
Particularly, the time of adopting hydrofluoric acid to clean can and be less than or equal to 30 minutes more than or equal to 10 minutes, as: 10 minutes, 15 minutes, 20 minutes or 30 minutes.
Need to prove that have relation between the time that employing hydrofluoric acid cleans and the percent by volume of hydrofluoric acid, and the percent by volume of hydrofluoric acid is more big, the time of adopting hydrofluoric acid to clean can be more short.
The process that adopts hydrofluoric acid to clean in the present embodiment can at room temperature be carried out, thereby can further simplify technology, saves cost.
Step S130 adopts deionized water (DI Water) to clean described quartz glass tube.
In order to prevent residual hydrofluoric acid solution or the follow-up etch process of other impurity effect, present embodiment can continue to adopt the described quartz glass tube of washed with de-ionized water after the employing hydrofluoric acid solution cleans described quartz glass tube.
Need to prove that the fluorine ion that generates also can be removed by deionized water in above-mentioned displacement reaction.
Step S140 is dried processing to described quartz glass tube.
Present embodiment can be dried processing to described quartz glass tube after the employing deionized water cleans quartz glass tube, to remove water wherein, quartz glass tube is come into operation as early as possible.
Particularly, the temperature that described oven dry is handled can comprise 80 ℃～110 ℃, as: 80 ℃, 90 ℃ or 110 ℃ etc.
Particularly, the time that described oven dry is handled can comprise 30 minutes～100 minutes, as: 30 minutes, 50 minutes, 80 minutes or 100 minutes.
Have relation between the time that the temperature that described oven dry is handled and described oven dry are handled, and the temperature that described oven dry is handled is more high, the time that described oven dry is handled is more short.
Need to prove that can omit oven dry in the present embodiment yet and handle this step, it does not influence protection scope of the present invention.
At this moment, the hydroxyl radical free radical content that can measure in the quartz glass tube by infrared spectrometer is A, and adopt hydrofluoric acid solution clean before hydroxyl radical free radical content in the quartz glass tube be B, by relatively A and B can find, handle by above-mentioned deshydroxy, the hydroxyl radical free radical in the quartz glass tube can be removed more than 90%.
Step S150 adopts described chemical drying method etching machine to carry out dry etching.
What particularly, described dry etching referred to can be: domatic polysilicon etching, active polysilicon eat-back, remember one or more in the circular etching in bottom of polysilicon etching, the etching of polysilicon thready pulse, the etching of nitride thready pulse and power device.
Specifically the process of carrying out dry etching is known for those skilled in the art, and concrete dry etching condition then needs to carry out different settings according to different situations, all repeats no more at this.
Present embodiment is realized the deshydroxy processing by the mode that adopts hydrofluoric acid that described quartz glass tube is cleaned, hydrofluoric acid can displace quartz glass tube-surface or inner hydroxyl radical free radical, and can not react with quartz glass tube, thereby can avoid the quartz glass tube in the CDE equipment to break, improve the yield of wafer, improve the stability of etch-rate, and technology is simple, cost is low.
With reference to shown in Figure 4, another embodiment of present embodiment also provides a kind of chemical drying method engraving method, may further comprise the steps.
Step S210 provides the chemical drying method etching machine, and described chemical drying method etching machine comprises quartz glass tube.
Do not limit the concrete structure of chemical drying method etching machine in the present embodiment, so long as the CDE equipment that comprises quartz glass tube is all within protection scope of the present invention.
Because the restriction of the manufacture craft of quartz glass all comprises a large amount of hydroxyl radical free radicals inevitably, and bubble phenomenon may occur in the described quartz glass tube.
Step S220 places described quartz glass tube 2 hours～4 hours in 1000 ℃～1200 ℃ environment.
The purpose of in the present embodiment quartz glass tube being carried out heat treated is to carry out dehydrogenation and handles, namely significantly reduce or remove the hydroxyl radical free radical of quartz glass tube-surface or inside, along with the minimizing of hydroxyl radical free radical quantity, the bubble of quartz glass tube inside also disappears thereupon.And then when this CDE equipment of subsequent applications, on the one hand, the free radical in the plasma with regard to not can with quartz glass tube in hydroxyl radical free radical react, thereby can not influence etch-rate, make etch-rate to stablize, the yield of wafer also can significantly improve; On the other hand, because quartz glass tube inside does not have bubble, so there is not the risk of breaking in quartz glass tube yet.
The temperature of heat treated can be 1000 ℃, 1100 ℃ or 1200 ℃ in the present embodiment, and the time of heat treated can be 2 hours, 3 hours or 4 hours, and the temperature of heat treated is more high, and the time of heat treated is more short.
At this moment, the hydroxyl radical free radical content that can measure in the quartz glass tube by infrared spectrometer is C, and adopt hydrofluoric acid solution clean before hydroxyl radical free radical content in the quartz glass tube be B, by relatively C and B can find, handle by above-mentioned deshydroxy, the hydroxyl radical free radical in the quartz glass tube also can be removed more than 90%.
Step S230 adopts described chemical drying method etching machine to carry out dry etching.
What particularly, described dry etching referred to can be: domatic polysilicon etching, active polysilicon eat-back, remember one or more in the circular etching in bottom of polysilicon etching, the etching of polysilicon thready pulse, the etching of nitride thready pulse and power device.
Specifically the process of carrying out dry etching is known for those skilled in the art, and concrete dry etching condition then needs the setting different according to different situations, all repeats no more at this.
Thereby present embodiment is placed described quartz glass tube and was realized the deshydroxy processing in 2 hours～4 hours in 1000 ℃～1200 ℃ environment, thereby can avoid the quartz glass tube in the CDE equipment to break, improve the yield of wafer, improve the stability of etch-rate, and can further simplify technology, reduce cost, improve the fail safe of deshydroxy.
Need to prove that in other embodiments of the invention, can also adopt other modes that quartz glass tube is carried out deshydroxy and handle, it does not limit protection scope of the present invention before using CDE equipment.
Accordingly, present embodiment also provides a kind of formation method of semiconductor device, comprises above-mentioned chemical drying method engraving method.
Owing to adopt above-mentioned chemical drying method engraving method can improve the yield of wafer, improve the stability of etch-rate, so finally can improve the yield of semiconductor device, and improve the performance of semiconductor device.
Though the present invention discloses as above, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (10)
1. a chemical drying method engraving method is characterized in that, comprising:
The chemical drying method etching machine is provided, and described chemical drying method etching machine comprises quartz glass tube;
Described quartz glass tube is carried out deshydroxy to be handled;
Adopt described chemical drying method etching machine to carry out dry etching.
2. chemical drying method engraving method as claimed in claim 1 is characterized in that, described deshydroxy is handled and comprised:
Adopt hydrofluoric acid that described quartz glass tube is cleaned.
3. chemical drying method engraving method as claimed in claim 2 is characterized in that, the percent by volume of described hydrofluoric acid is more than or equal to 10% and be less than or equal to 80%.
4. chemical drying method engraving method as claimed in claim 2 is characterized in that, the time that described deshydroxy is handled was more than or equal to 10 minutes and be less than or equal to 30 minutes.
5. chemical drying method engraving method as claimed in claim 2 is characterized in that, adopt hydrofluoric acid described quartz glass tube is cleaned after and carrying out dry etching before, described method also comprises: the described quartz glass tube of employing washed with de-ionized water.
6. chemical drying method engraving method as claimed in claim 5 is characterized in that, after adopting the described quartz glass tube of washed with de-ionized water and before carrying out dry etching, described method also comprises: described quartz glass tube is dried processing.
7. chemical drying method engraving method as claimed in claim 6 is characterized in that, the temperature that described oven dry is handled comprises 80 ℃～110 ℃, the time comprises 30 minutes～and 100 minutes.
8. chemical drying method engraving method as claimed in claim 1 is characterized in that, described deshydroxy is handled and comprised: described quartz glass tube was placed 2 hours～4 hours in 1000 ℃～1200 ℃ environment.
9. chemical drying method engraving method as claimed in claim 1, it is characterized in that, carry out described dry etching and comprise: domatic polysilicon etching, active polysilicon eat-back, remember one or more in the circular etching in bottom of polysilicon etching, the etching of polysilicon thready pulse, the etching of nitride thready pulse or power device.
10. the formation method of a semiconductor device is characterized in that, comprises as each described chemical drying method engraving method in the claim 1 to 9.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10114532A (en) * | 1996-10-04 | 1998-05-06 | Toshiba Ceramics Co Ltd | Production of jig for heat-treating quartz-glass semiconductor |
| CN1821134A (en) * | 2006-03-15 | 2006-08-23 | 中国科学院上海硅酸盐研究所 | Full wave band light window glass material and preparing method |
| CN101061075A (en) * | 2005-04-15 | 2007-10-24 | 赫罗伊斯石英玻璃股份有限两合公司 | Holder made from quartz glass for the processing of semiconductor wafers and method for production of the holder |
| CN102496561A (en) * | 2011-11-29 | 2012-06-13 | 上海宏力半导体制造有限公司 | Method for carrying out micro etching by utilizing chemical dry etching device |
| CN102531335A (en) * | 2011-12-16 | 2012-07-04 | 宁波大学 | Dynamic full-distillation purification method for low-hydroxy, high-purity chalcogenide glass |
| CN102775065A (en) * | 2012-06-29 | 2012-11-14 | 湖南工业大学 | Process for removing gas-liquid inclusions and hydroxyl water (OH)- in high-purity quartz sand |
-
2013
- 2013-06-26 CN CN201310261309.1A patent/CN103346066B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10114532A (en) * | 1996-10-04 | 1998-05-06 | Toshiba Ceramics Co Ltd | Production of jig for heat-treating quartz-glass semiconductor |
| CN101061075A (en) * | 2005-04-15 | 2007-10-24 | 赫罗伊斯石英玻璃股份有限两合公司 | Holder made from quartz glass for the processing of semiconductor wafers and method for production of the holder |
| CN1821134A (en) * | 2006-03-15 | 2006-08-23 | 中国科学院上海硅酸盐研究所 | Full wave band light window glass material and preparing method |
| CN102496561A (en) * | 2011-11-29 | 2012-06-13 | 上海宏力半导体制造有限公司 | Method for carrying out micro etching by utilizing chemical dry etching device |
| CN102531335A (en) * | 2011-12-16 | 2012-07-04 | 宁波大学 | Dynamic full-distillation purification method for low-hydroxy, high-purity chalcogenide glass |
| CN102775065A (en) * | 2012-06-29 | 2012-11-14 | 湖南工业大学 | Process for removing gas-liquid inclusions and hydroxyl water (OH)- in high-purity quartz sand |
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