CN102496561A - Method for carrying out micro etching by utilizing chemical dry etching device - Google Patents
Method for carrying out micro etching by utilizing chemical dry etching device Download PDFInfo
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- CN102496561A CN102496561A CN2011103884655A CN201110388465A CN102496561A CN 102496561 A CN102496561 A CN 102496561A CN 2011103884655 A CN2011103884655 A CN 2011103884655A CN 201110388465 A CN201110388465 A CN 201110388465A CN 102496561 A CN102496561 A CN 102496561A
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Abstract
The invention, which belongs to the semiconductor manufacturing technology field, provides a method for carrying out micro etching by utilizing a chemical dry etching device. The method comprises: etching gas containing O2 and N2 is employed to carry out micro etching on a wafer surface under the technical conditions that the temperature is lower than 100 DEG C and the pressure is less than 100 pascals. According to the invention, a burden of a degumming device can be reduced, so that productivity and efficiency of the degumming device are improved. Meanwhile, a utilization rate and application of the chemical dry etching device can be improved. Moreover, when the above-mentioned technology is employed, the hydrophilic performance of the wafer surface can be enhanced and an application amount of a surfactant in an etching solution can be saved; and the control performance of the technology can be improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of microetch method, this microetch method utilizes the chemical drying method etching machines to carry out.
Background technology
In field of semiconductor manufacture, etch process is a kind of technical process of selectively removing material.Etch process is divided into two kinds basically: dry etching and wet etching.Dry etching is to be exposed to the plasma that produces in the gaseous state to crystal column surface, and the window of plasma through leaving in the graphical mask on the wafer reacts with silicon chip, thereby removes the surfacing that exposes.Dry etching is the main method of etch device under sub-micron, the deep-submicron size.Wet etching is to utilize chemical reagent (acid, alkali and solvent etc.), removes the material of crystal column surface with chemical mode.Wet etching not only can be used for the etching of large-size mask window, and can be with the residue behind some layer that removes crystal column surface or the dry etching.
Dry etching is divided into three kinds again: physical property etching, chemical etching, the etching of physical chemistry property.Wherein the physical property etching is called sputter etching again, and the general using inert gas bombards silicon chip surface under highfield, and directivity is very strong, can accomplish anisotropic etching, but can not carry out selective etch.The chemical etching utilizes the reactive element (free radical and reaction of atomic) of plasma generation and the material of crystal column surface to react, and the volatility product that produces in the reaction is taken away by vacuum pump, thereby realizes the etching purpose.In order to obtain high selection ratio, the reacting gas that gets into the etching machines cavity has passed through prudent selection, and the etching in the cavity is isotropic, so live width control is poor.The etching of physical chemistry property then takes into account above double action, has the good advantage of anisotropy and selectivity simultaneously concurrently, and wherein reactive ion etching (RIE-Reactive ionEtching) is to use the most extensive a kind of dry method etch technology at present.By contrast, the etched application of chemical drying method is mainly eat-back (Source polyetch back) at domatic polysilicon etching (Slope poly etch), active polysilicon, is remembered the circular etching in bottom (Bottom rounding etch) of polysilicon etching (Memory poly etch), polysilicon thready pulse etching (Poly stringeretch), nitride thready pulse etching (Nitride stringer etch) and power device etc.
Many wet etching process, for example the removal technology of oxide skin(coating) (like CT_BOE, Contact BufferOxide Etch; The etching of contact hole buffer oxide layer), before handling crystal column surface, at first need carry out microetch to crystal column surface with chemical reagent; Change the crystal column surface characteristic; Change into hydrophily from hydrophobicity, and make that crystal column surface can be moistening by the infiltration liquid of follow-up use institute easily, and improve crystal column surface thus and soak into the microvesicle problem between the liquid; Therefore improving image becomes the shadow defective, improves the efficient and the integrality of wet etching.
At present, no matter be metal interconnecting wires FEOL (FEOL, front end of line), or metal interconnecting wires last part technology (BEOL, back end of the line), microetch mainly utilizes (photoetching) gluing equipment, adopts O
2Under the temperature that (photoresist) stripping technology is lower relatively, carry out the crystal column surface microetch.This just means the parameter that needs are regulated degumming equipment before carrying out microetch, and need the parameter of degumming equipment be recovered after the microetch, and this way will influence the productive rate of degumming equipment.Especially when back segment metal-containing layer arts demand takies degumming equipment and carries out microetch, will cause bigger influence to the productive rate of degumming equipment.Therefore, the inventor hopes to adopt other alternative microetch method.
Summary of the invention
The objective of the invention is to propose a kind of microetch method that can adopt the chemical drying method etching machines.To reduce the burden of degumming equipment, to improve its production capacity and efficient.Can improve simultaneously the utilance and the purposes of chemical drying method etching machines.
The technical scheme that the present invention adopted is: a kind of method of utilizing the chemical drying method etching machines to carry out microetch, adopt to comprise O
2And N
2Etching gas, crystal column surface carried out microetch less than 100 degrees centigrade, pressure under less than 100 Pascals' process conditions in temperature.
Preferably, said etching machine is for providing the equipment of isotropic etching.
Preferably, said O
2/ N
2Gas flow ratio was 20: 1～5: 1 scopes.For example: said O
2/ N
2Gas optimum flow ratio is 10: 1.Preferred, said O
2/ N
2The gas optimum flow is 200sccm/20sccm.
Preferably, the power of said chemical drying method etching machines is less than 800 watts.
Preferably, said dry etching device temperature be greater than 25 degrees centigrade, less than 100 degrees centigrade.
The present invention is intended to utilize common chemical dry etching equipment; Control through etching gas, temperature and pressure; Make the contact angle of photoresist spend less than 10; The damage control of photoresist has increased the hydrophilicity of crystal column surface within 11 nanometers ± 20%, and has improved the control performance of technology.
Description of drawings
Fig. 1 carries out the schematic diagram of microetch technology for adopting dry etching equipment;
Fig. 2 is for before carrying out microetch, photoresist surface state hydrophilicity resolution chart;
3a, 3b are respectively and utilize traditional degumming equipment and dry etching equipment of the present invention to carry out after the microetch among Fig. 3, photoresist surface and water contact angle comparison diagram.
Embodiment
Carry out the influence of microetch technology to the productive rate of ashing degumming equipment own in order to overcome available technology adopting ashing degumming equipment, the inventor proposes in the chemical drying method etching machines, to carry out the thinking of microetch technology.
The chemical drying method etching machines that can adopt is for example: cylindrical plasma etching machine, and it has chemical isotropic etching almost completely under 0.1～1 holder ear pressure; In addition, the stronger etching machines of isotropism such as following current etch system pattern etching machine can be realized.
The gas that is adopted is: O
2And N
2O wherein
2Main chemical etching reagentia, removal scum (organic photoresist scum silica frost) and the polymer (organic by-products residue) of rising.Referring to shown in Figure 1, according to reaction principle:
O
2→O+O
2-
C
xH
yO
z+O→CO+CO
2，
O
2Make the photoresist 1 of patterning and the various organic photoresist scum silica frost or the organic by-products residue (C that treat etch layer 2 surfaces that is exposed by the photoresist 1 of patterning
xH
yO
z) 3 be reacted into gas and taken away, can make the oxygen key that etch layer 2 surface attachment are a large amount of of treating of exposure simultaneously, thereby surface state becomes hydrophily from hydrophobicity.
Minor N
2Play diluting effect, can reduce the damage of plasma device.
Utilize dry etching equipment can temperature greater than 25 degrees centigrade, less than 100 degrees centigrade, pressure is less than 100 Pascals, power is less than under 800 watts the process conditions, in the short period with the O of proper proportion
2/ N
2, can make the photoresist damage control within 11 nanometers ± 20%, the contact angle of photoresist is less than 10 degree; And traditional degumming equipment is often controlled relatively poor to microetch, and therefore common technological requirement is: the photoresist damage control is within 20～30 nanometers, and contact angle gets final product less than 15 degree.In above-mentioned etching process, the reaction temperature of equipment is the maximum factor of technogenic influence, need be lower temperature; And pressure also need be low pressure, because lower pressure helps to make that the reacting gas directivity is weak, isotropism strengthens.
Said O
2/ N
2Gas flow ratio was controlled at 20: 1～5: 1, can reach above-mentioned technological requirement.Experiment showed, and work as O
2/ N
2When gas flow is respectively the 200sccm/20sccm left and right sides, can reach optimum efficiency.
[comparative experiments]
Referring to Fig. 2, carry out microetch before, drip to the photoresist surface through dropper, form water droplet on photoresist surface, visible photoresist surface forms bigger contact angle (angle among the figure between two dotted lines), it is poor to reflect photoresist surface hydrophilic performance.
Referring to Fig. 3 a, adopt traditional degumming equipment to carry out dripping to the photoresist surface through dropper after the microetch, form water droplet on the photoresist surface, visible photoresist surface forms the contact angle that is about 11 degree.
Referring to Fig. 3 b, adopt the chemical drying method etching machines to carry out dripping to the photoresist surface through dropper for after the etching, form water droplet on the photoresist surface, visible photoresist surface forms the contact angle that is about 6 degree.
Through above-mentioned execution mode; Crystal column surface is carried out microetch; The surface characteristic of treating etch layer is become hydrophily by hydrophobicity, can improve the efficient and the quality of follow-up wet etching, and practice thrift the use amount of cost higher surface activity agent in the etching solution etc.Adopt the chemical drying method etching machines to carry out microetch, can improve the utilization rate of chemical drying method etching machines, form to the adjusting of degumming equipment productive rate with replenish, improve process efficiency on the whole, shorten the process time, practice thrift cost.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (7)
1. a method of utilizing the chemical drying method etching machines to carry out microetch is characterized in that: adopt to comprise O
2And N
2Etching gas, crystal column surface carried out microetch less than 100 degrees centigrade, pressure under less than 100 Pascals' process conditions in temperature.
2. the method for claim 1 is characterized in that: said etching machine is for providing the equipment of isotropic etching.
3. the method for claim 1 is characterized in that: said O
2/ N
2Gas flow ratio was 20: 1～5: 1 scopes.
4. method as claimed in claim 3 is characterized in that: said O
2/ N
2Gas flow ratio is 10: 1.
5. method as claimed in claim 4 is characterized in that: said O
2/ N
2Gas flow is 200sccm/20sccm.
6. the method for claim 1, it is characterized in that: the power of said chemical drying method etching machines is less than 800 watts.
7. the method for claim 1 is characterized in that: said dry etching device temperature for greater than 25 degrees centigrade, less than 100 degrees centigrade.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103884655A CN102496561A (en) | 2011-11-29 | 2011-11-29 | Method for carrying out micro etching by utilizing chemical dry etching device |
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|---|---|---|---|
| CN2011103884655A CN102496561A (en) | 2011-11-29 | 2011-11-29 | Method for carrying out micro etching by utilizing chemical dry etching device |
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|---|---|
| CN102496561A true CN102496561A (en) | 2012-06-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346066A (en) * | 2013-06-26 | 2013-10-09 | 上海宏力半导体制造有限公司 | Chemical dry-method etching method and semiconductor device forming method |
| CN110993558A (en) * | 2019-11-18 | 2020-04-10 | 电子科技大学 | Substrate self-alignment bonding method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5948570A (en) * | 1995-05-26 | 1999-09-07 | Lucent Technologies Inc. | Process for dry lithographic etching |
| US20020074312A1 (en) * | 1999-05-03 | 2002-06-20 | Eric Ou-Yang | High density plasma post-etch treatment for a dielectric etch process |
| CN101169600A (en) * | 2007-11-28 | 2008-04-30 | 上海宏力半导体制造有限公司 | Method for removing photoresist of titanium or titanium nitride layer in semiconductor production |
| CN102012644A (en) * | 2009-09-04 | 2011-04-13 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing characteristic dimension of photoresist pattern |
-
2011
- 2011-11-29 CN CN2011103884655A patent/CN102496561A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5948570A (en) * | 1995-05-26 | 1999-09-07 | Lucent Technologies Inc. | Process for dry lithographic etching |
| US20020074312A1 (en) * | 1999-05-03 | 2002-06-20 | Eric Ou-Yang | High density plasma post-etch treatment for a dielectric etch process |
| CN101169600A (en) * | 2007-11-28 | 2008-04-30 | 上海宏力半导体制造有限公司 | Method for removing photoresist of titanium or titanium nitride layer in semiconductor production |
| CN102012644A (en) * | 2009-09-04 | 2011-04-13 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing characteristic dimension of photoresist pattern |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346066A (en) * | 2013-06-26 | 2013-10-09 | 上海宏力半导体制造有限公司 | Chemical dry-method etching method and semiconductor device forming method |
| CN110993558A (en) * | 2019-11-18 | 2020-04-10 | 电子科技大学 | Substrate self-alignment bonding method |
| CN110993558B (en) * | 2019-11-18 | 2022-06-03 | 电子科技大学 | Substrate self-alignment bonding method |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
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Application publication date: 20120613 |