CN103346066B - The forming method of chemical dry-method etching method and semiconductor devices - Google Patents
The forming method of chemical dry-method etching method and semiconductor devices Download PDFInfo
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- CN103346066B CN103346066B CN201310261309.1A CN201310261309A CN103346066B CN 103346066 B CN103346066 B CN 103346066B CN 201310261309 A CN201310261309 A CN 201310261309A CN 103346066 B CN103346066 B CN 103346066B
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Abstract
A kind of forming method of chemical dry-method etching method and semiconductor devices.The chemical dry-method etching method includes：Chemical drying method etching machine is provided, the chemical drying method etching machine includes quartz glass tube；Deshydroxy processing is carried out to the quartz glass tube；Dry etching is carried out using the chemical drying method etching machine.The present invention can avoid the quartz glass tube in CDE equipment from rupturing, and can improve the yield of etch-rate and wafer.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of chemical dry-method etching method and semiconductor devices
Forming method.
Background technology
In field of semiconductor manufacture, etch process is a kind of selective technical process for removing material.Etch process
Be broadly divided into dry etching and wet etching both.Wherein, dry etching is etch device under sub-micron, deep sub-micron dimensions
Main method, it is that crystal column surface is exposed to the plasma that produces in gaseous state, and plasma on wafer by being schemed
The window outputed in the mask of shape, reacts with silicon chip, so as to remove exposed surfacing.
Specifically, dry etching is divided into three kinds again：Physical etching, chemically etching and physical chemistry etching.Wherein：
Physical etching is also known as sputter etching, and general to bombard silicon chip surface under strong electric field using inert gas, directionality is very strong, can
To accomplish anisotropic etching, and selective etch can not be carried out；Chemically etch（Hereinafter referred to as chemical drying method is etched）Utilize
The reactive element that plasma is produced（Free radical and reaction of atomic）React, produced in reaction with the material of crystal column surface
Volatility product is taken away by vavuum pump, so as to realize etching purpose；Physical chemistry etching then takes into account physical etching and change
The double action of the property learned etching.
The application field of chemical drying method etching is main in domatic polysilicon etch（Slope poly etch）, active polycrystalline
Silicon is etched back（Source poly etch back）, memory polysilicon etch（Memory poly etch）, polysilicon stringer etching
（Poly stringer etch）, nitride thready pulse etching（Nitride stringer etch）And the bottom of power device
Circular etch（Bottom rounding etch）Deng.
More techniques etched on chemical drying method may be referred to Publication No. 102496561A, publication date for 2012 6
The Chinese patent application on the moon 13.
Chemical drying method etching in the prior art uses chemical drying method etching machine（Chemical Dry Etch, CDE）It is real
It is existing.All include quartz glass tube in CDE equipment, etching gas is passed through in the quartz glass tube, so that etching gas and quartzy glass
Glass pipe passes through microwave（Microwave）Positive and negative ion is ionized out, these positive and negative ions and wafer are reacted, so as to realize pair
The etching of wafer.
But, during being etched using above-mentioned CDE equipment, easily occur etch-rate and arbitrarily decline
（random drop）, or even wafer loss（scrap）Phenomenon.In addition, quartz glass tube also easily ruptures（broken）
Situation.
Therefore, when carrying out chemical drying method etching, how etch-rate is improved, it is ensured that the yield of wafer, and avoid quartz
Rupture, which occurs, for glass tube just turns into one of those skilled in the art's urgent problem to be solved.
The content of the invention
The problem of present invention is solved is to provide a kind of chemical dry-method etching method and the forming method of semiconductor devices, can be with
Avoid the quartz glass tube in CDE equipment from rupturing, and the yield of etch-rate and wafer can be improved.
To solve the above problems, the present invention provides a kind of chemical dry-method etching method, including：
Chemical drying method etching machine is provided, the chemical drying method etching machine includes quartz glass tube；
Deshydroxy processing is carried out to the quartz glass tube；
Dry etching is carried out using the chemical drying method etching machine.
Optionally, the deshydroxy processing includes：The quartz glass tube is cleaned using hydrofluoric acid.
Optionally, the percent by volume of the hydrofluoric acid is more than or equal to 10% and less than or equal to 80%.
Optionally, the time of the deshydroxy processing was more than or equal to 10 minutes and less than or equal to 30 minutes.
Optionally, after being cleaned using hydrofluoric acid to the quartz glass tube and before dry etching is carried out,
Methods described also includes：The quartz glass tube is cleaned using deionized water.
Optionally, cleaned using deionized water after the quartz glass tube and before dry etching is carried out, it is described
Method also includes：Drying and processing is carried out to the quartz glass tube.
Optionally, the temperature of the drying and processing includes 80 DEG C~110 DEG C, and the time includes 30 minutes~100 minutes.
Optionally, the deshydroxy processing includes：The quartz glass tube is placed 2 in 1000 DEG C~1200 DEG C of environment
Hour~4 hours.
Optionally, carrying out the dry etching includes：Domatic polysilicon etch, active polysilicon etch back, memory polysilicon
One or more in etching, polysilicon stringer etching, the etching of nitride thready pulse or the bottom circular etching of power device.
In order to solve the above problems, include the semiconductor device of above-mentioned chemical dry-method etching method present invention also offers a kind of
The forming method of part.
Compared with prior art, technical scheme has advantages below：Carried out using chemical drying method etching machine
Before dry etching, deshydroxy processing first is carried out to the quartz glass tube in chemical drying method etching machine, so as to reduce or remove
Quartz glass pipe surface or the hydroxyl radical free radical content of inside, it is to avoid formation forms bubble in quartz glass tube, is finally adopting
When chemical drying method etching machine after being handled with deshydroxy carries out dry etching, the quartz glass tube in CDE equipment can be avoided to send out
Raw rupture, can improve the yield of wafer, and can improve the stability of etch-rate.
Further, the mode that can be cleaned by using hydrofluoric acid to the quartz glass tube is realized at deshydroxy
Reason, hydrofluoric acid can displace the hydroxyl radical free radical of quartz glass pipe surface or inside, and will not occur with quartz glass tube anti-
Should, so that technique is simple, cost is low.
Further, the quartz glass tube can also be placed in 1000 DEG C~1200 DEG C of environment to 2 hours~4 small
When so as to realize that deshydroxy is handled, simplify technique so as to further, and reduce cost, the security of raising deshydroxy.
Brief description of the drawings
Fig. 1 is the schematic diagram of quartz glass tube；
Fig. 2 is the schematic flow sheet of the embodiment of chemical dry-method etching method one of the present invention；
Fig. 3 is the schematic flow sheet of the embodiment of chemical dry-method etching method one of the present invention
Fig. 4 is the schematic flow sheet of another embodiment of chemical dry-method etching method of the present invention.
Embodiment
In the prior art, when etching wafer using the chemical drying method etching machine for including quartz glass tube, etch-rate one
As arbitrarily reduce, and easily occur wafer loss, the phenomenon of quartz glass tracheal rupture.
In face of drawbacks described above, inventor has found that：With reference to shown in Fig. 1, the surface and inside of quartz glass tube 1 are deposited
In great amount of hydroxy group free radical（Free hydroxyl radical, OH-）2, the hydroxyl radical free radical 2 is at least through in the following manner
Formed：Protective gas hydrogen and SiO when forming quartz glass2Reaction；The water and SiO of the parcel body weight of quartz mineral2Instead
Should；Come from crystal and silica raw ore.In addition, the quantity of hydroxyl radical free radical 2 at a certain position in the inside of quartz glass tube 1 is too many
When, it can also gather in quartz glass tube 1 for bubble（bubble）3.
Inventor has found after further research：Quartz glass tube 1 is being used as the important component of CDE equipment
Before, hydroxyl radical free radical 2 therein is inevitable.It is etched when using the quartz glass tube 1 for including great amount of hydroxy group free radical 2
When, in microwave and high temperature（More than 45 DEG C）In the presence of, following two defects can be produced：
First, hydroxyl radical free radical 2 can be reacted with the free radical in plasma, so that milli occurs in etch-rate
It is irregular to decline, or even the risk of wafer loss occurs；
Second, the bubble 3 being accumulated in quartz glass tube 1 can cause the phenomenon that quartz glass tube 1 ruptures.
Before inventor carries out the studies above, those skilled in the art do not know etch-rate decline, wafer loss
Or the relation the reason for rupture of quartz glass tube 1 between hydroxyl radical free radical 2, that is, it have ignored hydroxyl free in quartz glass tube 1
The influence of 2 pairs of etchings of base, therefore always do not take any measure to reduce or eliminate the hydroxyl free in quartz glass tube 1 yet
Base 2.
On the basis of the studies above, inventor has found by further research：Can using CDE equipment it
Before, deshydroxy processing first is carried out to quartz glass tube therein so that reduce or eliminate as much as hydroxyl in quartz glass tube from
By base, bubble therein is removed.Final etch-rate can be stablized in a numerical value all the time after deshydroxy processing, and quartzy glass
Glass pipe is never ruptured, and the yield of wafer is also greatly improved.
Therefore, present embodiments provide for a kind of chemical dry-method etching method, with reference to shown in Fig. 2, including：
Step S11 includes quartz glass tube there is provided chemical drying method etching machine, the chemical drying method etching machine；
Step S12, deshydroxy processing is carried out to the quartz glass tube
Step S13, dry etching is carried out using the chemical drying method etching machine.
Present embodiment can reduce or remove the hydroxyl radical free radical content of quartz glass pipe surface or inside, it is to avoid in stone
Bubble is formed in English glass tube, can be with finally when the chemical drying method etching machine after being handled using deshydroxy carries out dry etching
Avoid the quartz glass tube in CDE equipment from rupturing, the yield of wafer can be improved, and the stabilization of etch-rate can be improved
Property.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
With reference to shown in Fig. 3, the embodiment of present embodiment one provides a kind of chemical dry-method etching method, including following step
Suddenly.
Step S110 includes quartz glass tube there is provided chemical drying method etching machine, the chemical drying method etching machine.
The concrete structure of chemical drying method etching machine is not limited in the present embodiment, as long as the CDE including quartz glass tube is set
For all within protection scope of the present invention.
Because the manufacture craft of quartz glass is limited, substantial amounts of hydroxyl is necessarily included in the quartz glass tube certainly
By base, thereby increases and it is possible to bubble phenomenon occurs.
Step S120, is cleaned using hydrofluoric acid to the quartz glass tube.
The purpose cleaned in the present embodiment using hydrofluoric acid solution to quartz glass tube is progress Dehydroepiandrosterone derivative, i.e.,
Greatly reduce or remove quartz glass pipe surface or internal hydroxyl radical free radical, with the reduction of hydroxyl radical free radical quantity, quartz
The bubble of glass tube also disappears therewith.And then in the subsequent applications CDE equipment, on the one hand, it is free in plasma
Base would not be reacted with the hydroxyl radical free radical in quartz glass tube, so as to not interfere with etch-rate so that etch-rate
It can stablize, the yield of wafer can also be greatly improved；On the other hand, due to no bubble inside quartz glass tube, therefore quartz
The risk of rupture is also not present in glass tube.
The hydrofluoric acid solution can react with hydroxyl radical free radical, thus displace hydroxyl in quartz glass tube from
By base, while hydrofluoric acid solution will not react with quartz material, i.e., influence will not be produced on quartz material.
The course of reaction of the hydrofluoric acid solution and hydroxyl radical free radical is：HF+OH-=F-+H2O, hydroxyl radical free radical therein
It is changed into water.
Specifically, the percent by volume of the hydrofluoric acid can be more than or equal to 10% and less than or equal to 80%, such as：10%、
20%th, 50%, 70% or 80% etc..
Specifically, the time cleaned using hydrofluoric acid can be more than or equal to 10 minutes and less than or equal to 30 points
Clock, such as：10 minutes, 15 minutes, 20 minutes or 30 minutes.
Closed it should be noted that existing between the time cleaned using hydrofluoric acid and the percent by volume of hydrofluoric acid
System, and the percent by volume of hydrofluoric acid is bigger, the time cleaned using hydrofluoric acid can be shorter.
The process cleaned in the present embodiment using hydrofluoric acid can be carried out at room temperature, so as to further simplify
Technique, saves cost.
Step S130, using deionized water（DI Water）Clean the quartz glass tube.
In order to prevent the hydrofluoric acid solution or the follow-up etch process of other impurity effects of residual, the present embodiment is using hydrogen
Fluorspar acid solution is cleaned after the quartz glass tube, can continue to clean the quartz glass tube using deionized water.
It should be noted that the fluorine ion generated in above-mentioned displacement reaction, can also be removed by deionized water.
Step S140, drying and processing is carried out to the quartz glass tube.
The present embodiment can be entered after being cleaned using deionized water to quartz glass tube to the quartz glass tube
Row drying and processing, to remove water therein, makes quartz glass tube come into operation as early as possible.
Specifically, the temperature of the drying and processing can include 80 DEG C~110 DEG C, such as：80 DEG C, 90 DEG C or 110 DEG C etc..
Specifically, the time of the drying and processing can be including 30 minutes~100 minutes, such as：30 minutes, 50 minutes, 80
Minute or 100 minutes.
There is relation, and the temperature of the drying and processing between the time of the temperature of the drying and processing and the drying and processing
Degree is higher, and the time of the drying and processing is shorter.
It should be noted that the step for can also omitting drying and processing in the present embodiment, it does not influence the guarantor of the present invention
Protect scope.
Now, the hydroxyl radical free radical content that can be measured by infrared spectrometer in quartz glass tube is A, and uses hydrogen
Hydroxyl radical free radical content before fluorspar acid solution is cleaned in quartz glass tube is B, by comparing A and B it can be found that passing through
Hydroxyl radical free radical in above-mentioned deshydroxy processing, quartz glass tube can remove more than 90%.
Step S150, dry etching is carried out using the chemical drying method etching machine.
Specifically, what the dry etching referred to can be：Domatic polysilicon etch, active polysilicon etch back, memory polycrystalline
One or more in silicon etching, polysilicon stringer etching, the etching of nitride thready pulse and the bottom circular etching of power device.
What the specific process for carrying out dry etching was well known to those skilled in the art, and specific dry etching conditions
Then need to carry out different settings according to different situations, repeat no more herein.
The mode that the present embodiment is cleaned by using hydrofluoric acid to the quartz glass tube realizes that deshydroxy is handled, hydrogen fluorine
Acid can displace the hydroxyl radical free radical of quartz glass pipe surface or inside, and will not be reacted with quartz glass tube, so that
The quartz glass tube in CDE equipment can be avoided to rupture, the yield of wafer is improved, the stability of etch-rate is improved, and
Technique is simple, and cost is low.
With reference to shown in Fig. 4, another embodiment of present embodiment also provides a kind of chemical dry-method etching method, including following
Step.
Step S210 includes quartz glass tube there is provided chemical drying method etching machine, the chemical drying method etching machine.
The concrete structure of chemical drying method etching machine is not limited in the present embodiment, as long as the CDE including quartz glass tube is set
For all within protection scope of the present invention.
Because the manufacture craft of quartz glass is limited, substantial amounts of hydroxyl is inevitably all included in the quartz glass tube
Free radical, thereby increases and it is possible to bubble phenomenon occurs.
Step S220, the quartz glass tube is placed 2 hours~4 hours in 1000 DEG C~1200 DEG C of environment.
The purpose heated in the present embodiment to quartz glass tube be carry out Dehydroepiandrosterone derivative, that is, greatly reduce or
The hydroxyl radical free radical of quartz glass pipe surface or inside is removed, with the reduction of hydroxyl radical free radical quantity, inside quartz glass tube
Bubble also disappear therewith.And then in the subsequent applications CDE equipment, on the one hand, free radical in plasma would not be with
Hydroxyl radical free radical in quartz glass tube is reacted, so as to not interfere with etch-rate so that etch-rate can be stablized, brilliant
Round yield can also be greatly improved；On the other hand, due to no bubble inside quartz glass tube, therefore quartz glass tube is not also deposited
In the risk of rupture.
The temperature heated in the present embodiment can be 1000 DEG C, 1100 DEG C or 1200 DEG C, and the time of heating can
Think 2 hours, 3 hours or 4 hours, and the temperature heated is higher, the time of heating is shorter.
Now, the hydroxyl radical free radical content that can be measured by infrared spectrometer in quartz glass tube is C, and uses hydrogen
Hydroxyl radical free radical content before fluorspar acid solution is cleaned in quartz glass tube is B, by comparing C and B it can be found that passing through
Hydroxyl radical free radical in above-mentioned deshydroxy processing, quartz glass tube can also remove more than 90%.
Step S230, dry etching is carried out using the chemical drying method etching machine.
Specifically, what the dry etching referred to can be：Domatic polysilicon etch, active polysilicon etch back, memory polycrystalline
One or more in silicon etching, polysilicon stringer etching, the etching of nitride thready pulse and the bottom circular etching of power device.
What the specific process for carrying out dry etching was well known to those skilled in the art, and specific dry etching conditions
Then need, according to the different setting of different situations, to repeat no more herein.
The present embodiment the quartz glass tube is placed in 1000 DEG C~1200 DEG C of environment 2 hours~4 hours so as to
Realize that deshydroxy is handled, so as to avoid the quartz glass tube in CDE equipment from rupturing, improve the yield of wafer, improve erosion
The stability of etching speed, and can further simplify technique, cost is reduced, the security of deshydroxy is improved.
It should be noted that in other embodiments of the invention, can also be before using CDE equipment, using other
Mode carries out deshydroxy processing to quartz glass tube, and it is not limited the scope of the invention.
Accordingly, present embodiment additionally provides a kind of forming method of semiconductor devices, including above-mentioned chemical drying method
Engraving method.
Due to the yield of wafer can be improved using above-mentioned chemical dry-method etching method, the stability of etch-rate is improved,
Therefore the yield of semiconductor devices may finally be improved, and improves the performance of semiconductor devices.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (8)
1. a kind of chemical dry-method etching method, it is characterised in that including：
Chemical drying method etching machine is provided, the chemical drying method etching machine includes quartz glass tube；
Deshydroxy processing is carried out to the quartz glass tube using hydrofluoric acid；
Dry etching is carried out using the chemical drying method etching machine；Wherein, the deshydroxy processing is to improve the etching on wafer
The stability of speed.
2. chemical dry-method etching method as claimed in claim 1, it is characterised in that the percent by volume of the hydrofluoric acid is more than
Or equal to 10% and less than or equal to 80%.
3. chemical dry-method etching method as claimed in claim 1, it is characterised in that the time of the deshydroxy processing is more than or waited
In 10 minutes and less than or equal to 30 minutes.
4. chemical dry-method etching method as claimed in claim 1, it is characterised in that using hydrofluoric acid to the quartz glass
After pipe is cleaned and before dry etching is carried out, methods described also includes：The quartzy glass is cleaned using deionized water
Glass pipe.
5. chemical dry-method etching method as claimed in claim 4, it is characterised in that the quartz is being cleaned using deionized water
After glass tube and before dry etching is carried out, methods described also includes：Drying and processing is carried out to the quartz glass tube.
6. chemical dry-method etching method as claimed in claim 5, it is characterised in that the temperature of the drying and processing includes 80 DEG C
~110 DEG C, the time includes 30 minutes~100 minutes.
7. chemical dry-method etching method as claimed in claim 1, it is characterised in that carrying out the dry etching includes：It is domatic
Polysilicon etch, active polysilicon etch back, memory polysilicon etch, polysilicon stringer etching, the etching of nitride thready pulse or power
One or more in the bottom circular etching of device.
8. a kind of forming method of semiconductor devices, it is characterised in that including the change as any one of claim 1 to 7
Learn dry etching method.
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| CN201310261309.1A CN103346066B (en) | 2013-06-26 | 2013-06-26 | The forming method of chemical dry-method etching method and semiconductor devices |
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Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10114532A (en) * | 1996-10-04 | 1998-05-06 | Toshiba Ceramics Co Ltd | Production of jig for heat-treating quartz-glass semiconductor |
| DE102005017739B4 (en) * | 2005-04-15 | 2009-11-05 | Heraeus Quarzglas Gmbh & Co. Kg | Quartz glass holder for the processing of semiconductor wafers and method for the production of the holder |
| CN100384766C (en) * | 2006-03-15 | 2008-04-30 | 中国科学院上海硅酸盐研究所 | Full wave band light window glass material and preparing method |
| CN102496561A (en) * | 2011-11-29 | 2012-06-13 | 上海宏力半导体制造有限公司 | Method for carrying out micro etching by utilizing chemical dry etching device |
| CN102531335B (en) * | 2011-12-16 | 2014-01-08 | 宁波大学 | Dynamic full-distillation purification method for low-hydroxy, high-purity chalcogenide glass |
| CN102775065A (en) * | 2012-06-29 | 2012-11-14 | 湖南工业大学 | Process for removing gas-liquid inclusions and hydroxyl water (OH)- in high-purity quartz sand |
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