CN103325787A - Cmos器件及其制造方法 - Google Patents
Cmos器件及其制造方法 Download PDFInfo
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- CN103325787A CN103325787A CN2012100756946A CN201210075694A CN103325787A CN 103325787 A CN103325787 A CN 103325787A CN 2012100756946 A CN2012100756946 A CN 2012100756946A CN 201210075694 A CN201210075694 A CN 201210075694A CN 103325787 A CN103325787 A CN 103325787A
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- mosfet
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (14)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210075694.6A CN103325787B (zh) | 2012-03-21 | 2012-03-21 | Cmos器件及其制造方法 |
US13/640,733 US9049061B2 (en) | 2012-03-21 | 2012-04-11 | CMOS device and method for manufacturing the same |
PCT/CN2012/000485 WO2013138952A1 (zh) | 2012-03-21 | 2012-04-11 | Cmos器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210075694.6A CN103325787B (zh) | 2012-03-21 | 2012-03-21 | Cmos器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN103325787A true CN103325787A (zh) | 2013-09-25 |
CN103325787B CN103325787B (zh) | 2017-05-03 |
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Family Applications (1)
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CN201210075694.6A Active CN103325787B (zh) | 2012-03-21 | 2012-03-21 | Cmos器件及其制造方法 |
Country Status (2)
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CN (1) | CN103325787B (zh) |
WO (1) | WO2013138952A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103646877A (zh) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | 一种双应力薄膜的制造方法 |
CN103646954A (zh) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | 双应力薄膜的制造方法及具有双应力薄膜的半导体器件 |
CN105742336A (zh) * | 2014-12-08 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | 形成应力结构的方法 |
CN111610651A (zh) * | 2020-07-10 | 2020-09-01 | 北京爱杰光电科技有限公司 | 一种基于应力硅的硅基电光调制器及其制作方法 |
CN112185894A (zh) * | 2020-09-14 | 2021-01-05 | 华虹半导体(无锡)有限公司 | 降低刻蚀停止层对nmos器件压应力的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010027005A1 (en) * | 2000-03-29 | 2001-10-04 | Masaru Moriwaki | Semiconductor device and method for fabricating the device |
CN1449585A (zh) * | 2000-11-22 | 2003-10-15 | 株式会社日立制作所 | 半导体器件及其制造方法 |
US20050093078A1 (en) * | 2003-10-30 | 2005-05-05 | Victor Chan | Increasing carrier mobility in NFET and PFET transistors on a common wafer |
CN101276758A (zh) * | 2007-03-26 | 2008-10-01 | 联华电子股份有限公司 | 制作半导体晶体管元件的方法 |
CN101930979A (zh) * | 2009-06-26 | 2010-12-29 | 中国科学院微电子研究所 | 控制器件阈值电压的CMOSFETs结构及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7521307B2 (en) * | 2006-04-28 | 2009-04-21 | International Business Machines Corporation | CMOS structures and methods using self-aligned dual stressed layers |
CN101447457B (zh) * | 2007-11-27 | 2011-07-06 | 中芯国际集成电路制造(上海)有限公司 | 双应力膜互补金属氧化物半导体晶体管的制造方法 |
CN102194751A (zh) * | 2010-03-11 | 2011-09-21 | 中芯国际集成电路制造(上海)有限公司 | 制作互补型金属氧化物半导体器件的方法 |
-
2012
- 2012-03-21 CN CN201210075694.6A patent/CN103325787B/zh active Active
- 2012-04-11 WO PCT/CN2012/000485 patent/WO2013138952A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010027005A1 (en) * | 2000-03-29 | 2001-10-04 | Masaru Moriwaki | Semiconductor device and method for fabricating the device |
CN1449585A (zh) * | 2000-11-22 | 2003-10-15 | 株式会社日立制作所 | 半导体器件及其制造方法 |
US20050093078A1 (en) * | 2003-10-30 | 2005-05-05 | Victor Chan | Increasing carrier mobility in NFET and PFET transistors on a common wafer |
CN101276758A (zh) * | 2007-03-26 | 2008-10-01 | 联华电子股份有限公司 | 制作半导体晶体管元件的方法 |
CN101930979A (zh) * | 2009-06-26 | 2010-12-29 | 中国科学院微电子研究所 | 控制器件阈值电压的CMOSFETs结构及其制造方法 |
Non-Patent Citations (1)
Title |
---|
黄国俊: "《"硅/锗掺杂类金刚石薄膜特性研究》", 《中国优秀硕士学位论文全文数据库,基础科学辑》 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103646877A (zh) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | 一种双应力薄膜的制造方法 |
CN103646954A (zh) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | 双应力薄膜的制造方法及具有双应力薄膜的半导体器件 |
CN105742336A (zh) * | 2014-12-08 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | 形成应力结构的方法 |
CN105742336B (zh) * | 2014-12-08 | 2019-10-25 | 中芯国际集成电路制造(上海)有限公司 | 形成应力结构的方法 |
CN111610651A (zh) * | 2020-07-10 | 2020-09-01 | 北京爱杰光电科技有限公司 | 一种基于应力硅的硅基电光调制器及其制作方法 |
CN111610651B (zh) * | 2020-07-10 | 2024-05-14 | 北京爱杰光电科技有限公司 | 一种基于应力硅的硅基电光调制器及其制作方法 |
CN112185894A (zh) * | 2020-09-14 | 2021-01-05 | 华虹半导体(无锡)有限公司 | 降低刻蚀停止层对nmos器件压应力的方法 |
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Publication number | Publication date |
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CN103325787B (zh) | 2017-05-03 |
WO2013138952A1 (zh) | 2013-09-26 |
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Effective date of registration: 20220424 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |