CN103247522A - 离子注入方法、输送容器及离子注入装置 - Google Patents

离子注入方法、输送容器及离子注入装置 Download PDF

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Publication number
CN103247522A
CN103247522A CN201310051265XA CN201310051265A CN103247522A CN 103247522 A CN103247522 A CN 103247522A CN 201310051265X A CN201310051265X A CN 201310051265XA CN 201310051265 A CN201310051265 A CN 201310051265A CN 103247522 A CN103247522 A CN 103247522A
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CN
China
Prior art keywords
substrate
ion implantation
mask
tray
vacuum
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Pending
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CN201310051265XA
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English (en)
Chinese (zh)
Inventor
曾我知洋
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Sumitomo Heavy Industries Ltd
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Sumitomo Heavy Industries Ltd
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Publication date
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Publication of CN103247522A publication Critical patent/CN103247522A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201310051265XA 2012-02-09 2013-02-16 离子注入方法、输送容器及离子注入装置 Pending CN103247522A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-026715 2012-02-09
JP2012026715A JP5892802B2 (ja) 2012-02-09 2012-02-09 イオン注入方法、搬送容器及びイオン注入装置

Publications (1)

Publication Number Publication Date
CN103247522A true CN103247522A (zh) 2013-08-14

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CN201310051265XA Pending CN103247522A (zh) 2012-02-09 2013-02-16 离子注入方法、输送容器及离子注入装置

Country Status (5)

Country Link
US (1) US9117960B2 (https=)
JP (1) JP5892802B2 (https=)
KR (1) KR101412687B1 (https=)
CN (1) CN103247522A (https=)
TW (1) TWI514446B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105374656A (zh) * 2014-08-08 2016-03-02 住友重机械离子技术有限公司 离子注入装置、离子注入方法及射束测量装置
JP2023526597A (ja) * 2020-05-15 2023-06-22 エムアイツー‐ファクトリー ジーエムビーエイチ エネルギーフィルタ及び追加的な加熱素子を含むイオン注入装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6338416B2 (ja) * 2014-03-27 2018-06-06 住重アテックス株式会社 イオン照射方法およびイオン照射に用いる固定装置
KR20170086637A (ko) 2014-11-26 2017-07-26 폰 아르데네 게엠베하 기판 유지 장치, 기판 이송 장치, 처리 조립체 및 기판 처리 방법
JP6410689B2 (ja) * 2015-08-06 2018-10-24 住友重機械イオンテクノロジー株式会社 イオン注入装置及びそれを用いた複数枚のウェハの処理方法

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CN102047390A (zh) * 2008-03-05 2011-05-04 瓦里安半导体设备公司 太阳能电池中合并植入的使用
CN102203955A (zh) * 2008-11-20 2011-09-28 瓦里安半导体设备公司 制造太阳能电池的技术
WO2011155199A1 (ja) * 2010-06-10 2011-12-15 株式会社アルバック 太陽電池製造装置及び太陽電池製造方法

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US6335534B1 (en) * 1998-04-17 2002-01-01 Kabushiki Kaisha Toshiba Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
JP3353064B2 (ja) * 2000-02-17 2002-12-03 独立行政法人物質・材料研究機構 イオン注入装置および方法
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US7820460B2 (en) * 2007-09-07 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Patterned assembly for manufacturing a solar cell and a method thereof
JP4530032B2 (ja) * 2007-11-29 2010-08-25 日新イオン機器株式会社 イオンビーム照射方法およびイオンビーム照射装置
US8330128B2 (en) * 2009-04-17 2012-12-11 Varian Semiconductor Equipment Associates, Inc. Implant mask with moveable hinged mask segments
US9000446B2 (en) * 2009-05-22 2015-04-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US20110027463A1 (en) * 2009-06-16 2011-02-03 Varian Semiconductor Equipment Associates, Inc. Workpiece handling system
EP3188215A3 (en) * 2010-02-09 2017-09-13 Intevac, Inc. An adjustable shadow mask assembly for use in solar cell fabrications
US8216923B2 (en) * 2010-10-01 2012-07-10 Varian Semiconductor Equipment Associates, Inc. Integrated shadow mask/carrier for patterned ion implantation
JP5704402B2 (ja) * 2011-08-30 2015-04-22 日新イオン機器株式会社 基板保持部材および当該半導体保持部材への半導体基板の取り付け位置調整方法
JP2013131367A (ja) * 2011-12-21 2013-07-04 Nissin Ion Equipment Co Ltd イオン注入装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102047390A (zh) * 2008-03-05 2011-05-04 瓦里安半导体设备公司 太阳能电池中合并植入的使用
CN102203955A (zh) * 2008-11-20 2011-09-28 瓦里安半导体设备公司 制造太阳能电池的技术
WO2011155199A1 (ja) * 2010-06-10 2011-12-15 株式会社アルバック 太陽電池製造装置及び太陽電池製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105374656A (zh) * 2014-08-08 2016-03-02 住友重机械离子技术有限公司 离子注入装置、离子注入方法及射束测量装置
JP2023526597A (ja) * 2020-05-15 2023-06-22 エムアイツー‐ファクトリー ジーエムビーエイチ エネルギーフィルタ及び追加的な加熱素子を含むイオン注入装置
JP7700152B2 (ja) 2020-05-15 2025-06-30 エムアイツー‐ファクトリー ジーエムビーエイチ エネルギーフィルタ及び追加的な加熱素子を含むイオン注入装置

Also Published As

Publication number Publication date
TWI514446B (zh) 2015-12-21
JP2013165131A (ja) 2013-08-22
KR101412687B1 (ko) 2014-06-27
US20130210183A1 (en) 2013-08-15
KR20130092373A (ko) 2013-08-20
JP5892802B2 (ja) 2016-03-23
US9117960B2 (en) 2015-08-25
TW201334038A (zh) 2013-08-16

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Application publication date: 20130814