CN103222034B - 包含透射区域的抛光垫 - Google Patents
包含透射区域的抛光垫 Download PDFInfo
- Publication number
- CN103222034B CN103222034B CN201180055788.0A CN201180055788A CN103222034B CN 103222034 B CN103222034 B CN 103222034B CN 201180055788 A CN201180055788 A CN 201180055788A CN 103222034 B CN103222034 B CN 103222034B
- Authority
- CN
- China
- Prior art keywords
- polishing pad
- main body
- pit
- translucent insert
- translucent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 195
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- 238000000034 method Methods 0.000 claims description 37
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- 239000002243 precursor Substances 0.000 claims description 3
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- 238000000149 argon plasma sintering Methods 0.000 description 5
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- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
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- 238000000059 patterning Methods 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
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- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
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- 238000011065 in-situ storage Methods 0.000 description 2
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- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 2
- 229920001195 polyisoprene Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000011496 polyurethane foam Substances 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
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- 238000002834 transmittance Methods 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- GUBGYTABKSRVRQ-XLOQQCSPSA-N Alpha-Lactose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@H](O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-XLOQQCSPSA-N 0.000 description 1
- 229920000858 Cyclodextrin Polymers 0.000 description 1
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- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 description 1
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 1
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- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000018102 proteins Nutrition 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 239000004299 sodium benzoate Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41501510P | 2010-11-18 | 2010-11-18 | |
US61/415,015 | 2010-11-18 | ||
PCT/US2011/061312 WO2012068428A2 (en) | 2010-11-18 | 2011-11-18 | Polishing pad comprising transmissive region |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103222034A CN103222034A (zh) | 2013-07-24 |
CN103222034B true CN103222034B (zh) | 2016-03-09 |
Family
ID=46084662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180055788.0A Expired - Fee Related CN103222034B (zh) | 2010-11-18 | 2011-11-18 | 包含透射区域的抛光垫 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20130237136A1 (de) |
EP (1) | EP2641268A4 (de) |
JP (1) | JP5918254B2 (de) |
KR (1) | KR101602544B1 (de) |
CN (1) | CN103222034B (de) |
MY (1) | MY166716A (de) |
SG (1) | SG190249A1 (de) |
WO (1) | WO2012068428A2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013123105A2 (en) * | 2012-02-14 | 2013-08-22 | Innopad, Inc. | Method of manufacturing a chemical mechanical planarization pad |
US20140370788A1 (en) * | 2013-06-13 | 2014-12-18 | Cabot Microelectronics Corporation | Low surface roughness polishing pad |
CN106853610B (zh) | 2015-12-08 | 2019-11-01 | 中芯国际集成电路制造(北京)有限公司 | 抛光垫及其监测方法和监测系统 |
KR101829542B1 (ko) * | 2016-07-27 | 2018-02-23 | 신우유니온(주) | 손톱용 버퍼의 제조방법 |
US9925637B2 (en) * | 2016-08-04 | 2018-03-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tapered poromeric polishing pad |
US11325221B2 (en) * | 2017-11-16 | 2022-05-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with multipurpose composite window |
US11192215B2 (en) * | 2017-11-16 | 2021-12-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with pad wear indicator |
US11260495B2 (en) * | 2018-07-27 | 2022-03-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and methods for chemical mechanical polishing |
JP7317440B2 (ja) * | 2019-04-15 | 2023-07-31 | 株式会社ディスコ | ドレッシング工具 |
JP7220130B2 (ja) * | 2019-07-11 | 2023-02-09 | 株式会社クラレ | 研磨パッド及び研磨パッドの製造方法 |
KR102593117B1 (ko) * | 2021-07-02 | 2023-10-24 | 에스케이엔펄스 주식회사 | 연마패드 및 이를 이용한 반도체 소자의 제조방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0824995A1 (de) * | 1996-08-16 | 1998-02-25 | Applied Materials, Inc. | Erzeugen eines durchsichtigen Fenster in einem Polierkissen für eine chemisch-mechanische Poliervorrichtung |
EP1306163A1 (de) * | 2001-10-26 | 2003-05-02 | JSR Corporation | Fenster für ein Polierkissen zum chemisch-mechanischen Polieren |
CN101184582A (zh) * | 2005-04-25 | 2008-05-21 | 卡伯特微电子公司 | 用于化学机械抛光的多层抛光垫材料 |
CN101242931A (zh) * | 2005-08-22 | 2008-08-13 | 应用材料股份有限公司 | 基于光谱的监测化学机械研磨的装置及方法 |
CN101443157A (zh) * | 2006-05-17 | 2009-05-27 | 东洋橡胶工业株式会社 | 抛光垫 |
Family Cites Families (36)
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US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
US5605760A (en) * | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
US6146248A (en) * | 1997-05-28 | 2000-11-14 | Lam Research Corporation | Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher |
US5888120A (en) * | 1997-09-29 | 1999-03-30 | Lsi Logic Corporation | Method and apparatus for chemical mechanical polishing |
US6068539A (en) * | 1998-03-10 | 2000-05-30 | Lam Research Corporation | Wafer polishing device with movable window |
US6248000B1 (en) * | 1998-03-24 | 2001-06-19 | Nikon Research Corporation Of America | Polishing pad thinning to optically access a semiconductor wafer surface |
US6280289B1 (en) * | 1998-11-02 | 2001-08-28 | Applied Materials, Inc. | Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers |
US6190234B1 (en) * | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
US6247998B1 (en) * | 1999-01-25 | 2001-06-19 | Applied Materials, Inc. | Method and apparatus for determining substrate layer thickness during chemical mechanical polishing |
US6716085B2 (en) * | 2001-12-28 | 2004-04-06 | Applied Materials Inc. | Polishing pad with transparent window |
US6071177A (en) * | 1999-03-30 | 2000-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for determining end point in a polishing process |
US6213845B1 (en) * | 1999-04-26 | 2001-04-10 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same |
US6135859A (en) * | 1999-04-30 | 2000-10-24 | Applied Materials, Inc. | Chemical mechanical polishing with a polishing sheet and a support sheet |
US6171181B1 (en) * | 1999-08-17 | 2001-01-09 | Rodel Holdings, Inc. | Molded polishing pad having integral window |
JP2003510826A (ja) * | 1999-09-29 | 2003-03-18 | ロデール ホールディングス インコーポレイテッド | 研磨パッド |
JP2001110762A (ja) * | 1999-10-04 | 2001-04-20 | Asahi Kasei Corp | 研磨パッド |
US8485862B2 (en) * | 2000-05-19 | 2013-07-16 | Applied Materials, Inc. | Polishing pad for endpoint detection and related methods |
US6840843B2 (en) * | 2001-03-01 | 2005-01-11 | Cabot Microelectronics Corporation | Method for manufacturing a polishing pad having a compressed translucent region |
JP4131632B2 (ja) * | 2001-06-15 | 2008-08-13 | 株式会社荏原製作所 | ポリッシング装置及び研磨パッド |
KR100541545B1 (ko) * | 2003-06-16 | 2006-01-11 | 삼성전자주식회사 | 화학기계적 연마 장비의 연마 테이블 |
US6884156B2 (en) * | 2003-06-17 | 2005-04-26 | Cabot Microelectronics Corporation | Multi-layer polishing pad material for CMP |
US7195539B2 (en) * | 2003-09-19 | 2007-03-27 | Cabot Microelectronics Coporation | Polishing pad with recessed window |
US7264536B2 (en) * | 2003-09-23 | 2007-09-04 | Applied Materials, Inc. | Polishing pad with window |
US8066552B2 (en) * | 2003-10-03 | 2011-11-29 | Applied Materials, Inc. | Multi-layer polishing pad for low-pressure polishing |
US8075372B2 (en) * | 2004-09-01 | 2011-12-13 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
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JP5534672B2 (ja) * | 2005-08-22 | 2014-07-02 | アプライド マテリアルズ インコーポレイテッド | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
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2011
- 2011-11-18 US US13/988,144 patent/US20130237136A1/en not_active Abandoned
- 2011-11-18 EP EP11841143.8A patent/EP2641268A4/de not_active Withdrawn
- 2011-11-18 MY MYPI2013001771A patent/MY166716A/en unknown
- 2011-11-18 KR KR1020137015580A patent/KR101602544B1/ko active IP Right Grant
- 2011-11-18 WO PCT/US2011/061312 patent/WO2012068428A2/en active Application Filing
- 2011-11-18 CN CN201180055788.0A patent/CN103222034B/zh not_active Expired - Fee Related
- 2011-11-18 JP JP2013540037A patent/JP5918254B2/ja not_active Expired - Fee Related
- 2011-11-18 SG SG2013036363A patent/SG190249A1/en unknown
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EP0824995A1 (de) * | 1996-08-16 | 1998-02-25 | Applied Materials, Inc. | Erzeugen eines durchsichtigen Fenster in einem Polierkissen für eine chemisch-mechanische Poliervorrichtung |
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Also Published As
Publication number | Publication date |
---|---|
KR101602544B1 (ko) | 2016-03-10 |
EP2641268A4 (de) | 2017-01-25 |
JP5918254B2 (ja) | 2016-05-18 |
JP2013542863A (ja) | 2013-11-28 |
KR20130116892A (ko) | 2013-10-24 |
SG190249A1 (en) | 2013-06-28 |
MY166716A (en) | 2018-07-18 |
EP2641268A2 (de) | 2013-09-25 |
US20130237136A1 (en) | 2013-09-12 |
WO2012068428A3 (en) | 2012-08-16 |
WO2012068428A2 (en) | 2012-05-24 |
CN103222034A (zh) | 2013-07-24 |
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