CN103199086A - 具有带屏蔽功能的微流道结构的硅基转接板及其制作方法 - Google Patents
具有带屏蔽功能的微流道结构的硅基转接板及其制作方法 Download PDFInfo
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- CN103199086A CN103199086A CN2013100872689A CN201310087268A CN103199086A CN 103199086 A CN103199086 A CN 103199086A CN 2013100872689 A CN2013100872689 A CN 2013100872689A CN 201310087268 A CN201310087268 A CN 201310087268A CN 103199086 A CN103199086 A CN 103199086A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 108
- 239000012530 fluid Substances 0.000 claims description 95
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- 238000005530 etching Methods 0.000 claims description 20
- 238000005516 engineering process Methods 0.000 claims description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
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- 229910052751 metal Inorganic materials 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
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- 238000005240 physical vapour deposition Methods 0.000 claims description 8
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- 238000000992 sputter etching Methods 0.000 claims description 8
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- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
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- 238000007521 mechanical polishing technique Methods 0.000 claims description 4
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- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
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- 239000010949 copper Substances 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310087268.9A CN103199086B (zh) | 2013-03-19 | 2013-03-19 | 具有带屏蔽功能的微流道结构的硅基转接板及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310087268.9A CN103199086B (zh) | 2013-03-19 | 2013-03-19 | 具有带屏蔽功能的微流道结构的硅基转接板及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103199086A true CN103199086A (zh) | 2013-07-10 |
CN103199086B CN103199086B (zh) | 2015-10-28 |
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CN201310087268.9A Active CN103199086B (zh) | 2013-03-19 | 2013-03-19 | 具有带屏蔽功能的微流道结构的硅基转接板及其制作方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111081655A (zh) * | 2019-12-19 | 2020-04-28 | 青岛歌尔智能传感器有限公司 | 电子封装结构及其制作方法 |
CN111149342A (zh) * | 2017-09-27 | 2020-05-12 | Lg电子株式会社 | 电子装置 |
WO2020098479A1 (zh) * | 2018-11-14 | 2020-05-22 | 天津大学 | 散热结构、带散热结构的体声波谐振器、滤波器和电子设备 |
US10966314B2 (en) | 2017-09-27 | 2021-03-30 | Lg Electronics Inc. | Electronic device |
CN115799194A (zh) * | 2023-02-03 | 2023-03-14 | 之江实验室 | 晶圆散热微流道、制备方法及三维集成方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7432592B2 (en) * | 2005-10-13 | 2008-10-07 | Intel Corporation | Integrated micro-channels for 3D through silicon architectures |
TW200818451A (en) * | 2006-06-02 | 2008-04-16 | Renesas Tech Corp | Semiconductor device |
KR100723531B1 (ko) * | 2006-06-13 | 2007-05-30 | 삼성전자주식회사 | 반도체 패키지 기판 |
US8288243B2 (en) * | 2010-04-15 | 2012-10-16 | Texas Instruments Incorporated | Method for fabricating through substrate microchannels |
TWI467742B (zh) * | 2011-08-03 | 2015-01-01 | 矽品精密工業股份有限公司 | 具有屏蔽電磁干擾功能的層結構 |
-
2013
- 2013-03-19 CN CN201310087268.9A patent/CN103199086B/zh active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111149342A (zh) * | 2017-09-27 | 2020-05-12 | Lg电子株式会社 | 电子装置 |
US10966314B2 (en) | 2017-09-27 | 2021-03-30 | Lg Electronics Inc. | Electronic device |
CN111149342B (zh) * | 2017-09-27 | 2021-10-08 | Lg电子株式会社 | 电子装置 |
US11553590B2 (en) | 2017-09-27 | 2023-01-10 | Lg Electronics Inc. | Electronic device |
WO2020098479A1 (zh) * | 2018-11-14 | 2020-05-22 | 天津大学 | 散热结构、带散热结构的体声波谐振器、滤波器和电子设备 |
CN111081655A (zh) * | 2019-12-19 | 2020-04-28 | 青岛歌尔智能传感器有限公司 | 电子封装结构及其制作方法 |
CN111081655B (zh) * | 2019-12-19 | 2021-10-22 | 青岛歌尔智能传感器有限公司 | 电子封装结构及其制作方法 |
CN115799194A (zh) * | 2023-02-03 | 2023-03-14 | 之江实验室 | 晶圆散热微流道、制备方法及三维集成方法 |
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Publication number | Publication date |
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CN103199086B (zh) | 2015-10-28 |
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Effective date of registration: 20150217 Address after: 214135 Jiangsu province Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park building D1 Applicant after: National Center for Advanced Packaging Co.,Ltd. Address before: 100083 Beijing city Chaoyang District Beitucheng West Road No. 3 Applicant before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20170810 Address after: 200331 room 155-2, ginkgo Road, Shanghai, Putuo District, China, 4 Patentee after: Shanghai State Intellectual Property Services Co.,Ltd. Address before: 214135 Jiangsu province Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park building D1 Patentee before: National Center for Advanced Packaging Co.,Ltd. |
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Effective date of registration: 20191210 Address after: 214028 Jiangsu New District of Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park building D1 Patentee after: National Center for Advanced Packaging Co.,Ltd. Address before: 200331 room 155-2, ginkgo Road, Shanghai, Putuo District, China, 4 Patentee before: Shanghai State Intellectual Property Services Co.,Ltd. |