CN102496579B - 一种在转接板上实现电绝缘的方法 - Google Patents
一种在转接板上实现电绝缘的方法 Download PDFInfo
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- CN102496579B CN102496579B CN201110427183.1A CN201110427183A CN102496579B CN 102496579 B CN102496579 B CN 102496579B CN 201110427183 A CN201110427183 A CN 201110427183A CN 102496579 B CN102496579 B CN 102496579B
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- tsv structure
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000010292 electrical insulation Methods 0.000 title abstract 3
- 239000011810 insulating material Substances 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims abstract description 10
- 230000007797 corrosion Effects 0.000 claims abstract description 10
- 238000001039 wet etching Methods 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007769 metal material Substances 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 241000724291 Tobacco streak virus Species 0.000 description 17
- 239000000377 silicon dioxide Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 238000001465 metallisation Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- 239000011799 hole material Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
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Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110427183.1A CN102496579B (zh) | 2011-12-19 | 2011-12-19 | 一种在转接板上实现电绝缘的方法 |
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CN201110427183.1A CN102496579B (zh) | 2011-12-19 | 2011-12-19 | 一种在转接板上实现电绝缘的方法 |
Publications (2)
Publication Number | Publication Date |
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CN102496579A CN102496579A (zh) | 2012-06-13 |
CN102496579B true CN102496579B (zh) | 2014-04-02 |
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CN201110427183.1A Active CN102496579B (zh) | 2011-12-19 | 2011-12-19 | 一种在转接板上实现电绝缘的方法 |
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CN (1) | CN102496579B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI544593B (zh) * | 2013-09-09 | 2016-08-01 | 矽品精密工業股份有限公司 | 半導體裝置及其製法 |
CN105742226B (zh) * | 2014-12-09 | 2019-05-21 | 中国科学院微电子研究所 | 半导体器件制造方法 |
CN105742196B (zh) * | 2014-12-09 | 2018-07-27 | 中国科学院微电子研究所 | 半导体器件制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090127667A1 (en) * | 2007-11-21 | 2009-05-21 | Powertech Technology Inc. | Semiconductor chip device having through-silicon-via (TSV) and its fabrication method |
US8932906B2 (en) * | 2008-08-19 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through silicon via bonding structure |
US7956442B2 (en) * | 2008-10-09 | 2011-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside connection to TSVs having redistribution lines |
US7928534B2 (en) * | 2008-10-09 | 2011-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad connection to redistribution lines having tapered profiles |
US8264077B2 (en) * | 2008-12-29 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside metal of redistribution line with silicide layer on through-silicon via of semiconductor chips |
TWI366890B (en) * | 2008-12-31 | 2012-06-21 | Ind Tech Res Inst | Method of manufacturing through-silicon-via and through-silicon-via structure |
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- 2011-12-19 CN CN201110427183.1A patent/CN102496579B/zh active Active
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CN102496579A (zh) | 2012-06-13 |
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Effective date of registration: 20150226 Address after: Taihu international science and Technology Park in Jiangsu province Wuxi City Linghu road 214135 Wuxi national hi tech Industrial Development Zone No. 200 Chinese Sensor Network International Innovation Park building D1 Patentee after: National Center for Advanced Packaging Co., Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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Effective date of registration: 20170825 Address after: 200331 room 155-2, ginkgo Road, Shanghai, Putuo District, China, 4 Patentee after: Shanghai State Intellectual Property Services Co., Ltd. Address before: Taihu international science and Technology Park in Jiangsu province Wuxi City Linghu road 214135 Wuxi national hi tech Industrial Development Zone No. 200 Chinese Sensor Network International Innovation Park building D1 Patentee before: National Center for Advanced Packaging Co., Ltd. |
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