CN103199014B - Method for thinning and polishing InP material - Google Patents
Method for thinning and polishing InP material Download PDFInfo
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- CN103199014B CN103199014B CN201310068641.6A CN201310068641A CN103199014B CN 103199014 B CN103199014 B CN 103199014B CN 201310068641 A CN201310068641 A CN 201310068641A CN 103199014 B CN103199014 B CN 103199014B
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- thinning
- silicon chip
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- 239000000463 material Substances 0.000 title claims abstract description 62
- 238000005498 polishing Methods 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000000227 grinding Methods 0.000 claims abstract description 24
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 4
- 239000003153 chemical reaction reagent Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 15
- 239000000243 solution Substances 0.000 claims description 10
- 239000002105 nanoparticle Substances 0.000 claims description 8
- 150000003376 silicon Chemical class 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000002294 plasma sputter deposition Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 3
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 3
- 239000008267 milk Substances 0.000 claims description 3
- 210000004080 milk Anatomy 0.000 claims description 3
- 235000013336 milk Nutrition 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 3
- 235000011152 sodium sulphate Nutrition 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a method for thinning and polishing an InP material, which comprises the following steps: manufacturing a silicon wafer grinding liner for thinning the InP material; thinning InP materials by using the silicon wafer grinding pad; carrying out chemical mechanical polishing on the InP material; cleaning the InP material subjected to the chemical mechanical polishing; and putting the cleaned InP material into an ICP etching machine for plasma polishing. The invention greatly improves the thinning effect, realizes the thinning and polishing of the substrate with no pollution, low damage, high efficiency and mirror surface effect, and solves the technical problem of the InPMMIC back-end.
Description
Technical field
The present invention relates to InPMMIC preparing technical field, what particularly relate to a kind of improvement carries out method that is thinning and polishing to InP material.
Background technology
Along with new and high technology is constantly applied to military field, frequency microwave signal frequency is more and more higher, and frequency range is more and more wider, and the disposal ability of digit chip is more and more stronger, and modern war has progressed into information age and digital times.The fast development of electronic device makes the transmission rate of signal more and more faster; III-V relies on its excellent frequency characteristic, and its semiconductor device and relevant very high speed digital/Digital Analog Hybrid Circuits are becoming one of core component of the modernization defence equipments such as military communication, radar, guidance, space defense, high-speed intelligent weapon and electronic countermeasures.Particularly in Terahertz research field, the use of InP material is in the ascendant.
In numerous Group III-V compound semiconductor devices, InP material has unique advantage, this mainly has benefited from its excellent material behavior, such as very little between InGaAs and InP lattice mismatch, and very high electron saturation velocities etc., no matter so HEMT-structure or HBT structure, there are very excellent high frequency, high-power performance.But the physical property of InP material is very poor, very frangible, very little collision or vibration all can cause that wafer is cracked and all that has been achieved is spoiled, and therefore InP material volume manufacture processing just faces an a lot of technologic difficult problem.
For ultra-high frequency, powerful InPMMIC, its heat dissipation problem is difficult to good solution always, the solution of comparative maturity makes large-area heat radiating metal at the InP wafer substrate back side, front MMIC circuit and backside heat metal are passed through metallic communication, realizes effective release of heat.
Based on this solution, carry out thinning to InP wafer substrate, make it to reach very thin thickness, and thinning surface to realize mirror effect to meet the strongly adherent of back metal.But the physical property of InP fragility causes the technology difficulty of low reduced thickness and mirror effect polishing very large, and the thinning and glossing therefore improving the low thickness of low damage of InP material is significant.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is that providing a kind of carries out method that is thinning and polishing to InP material.
(2) technical scheme
For achieving the above object, the invention provides and a kind of method that is thinning and polishing be carried out to InP material, comprising: make and thinning silicon chip grinding liner is carried out to InP material; This silicon chip grinding liner is utilized to carry out thinning to InP material; Chemico-mechanical polishing is carried out to InP material; The InP material completing chemico-mechanical polishing is cleaned; And the InP material after cleaning is put into ICP etching machine and carried out plasma polishing.
In such scheme, described making carries out the step of thinning silicon chip grinding liner to InP material, comprising: carry out standard RCA clean technique to silicon chip; And use sputtering unit surface, silicon wafer polishing face after cleaning to adopt RF plasma sputtering Ti/Al
2o
3nano particle film layer structure, forms silicon chip grinding liner.
In such scheme, described step of silicon chip being carried out to standard RCA clean technique, comprising: clean silicon chip at 100 ~ 130 DEG C of temperature with SC-3 reagent: in SC-3 reagent, each composition volume ratio is H
2sO
4: H
2o
2: H
2o=1: 3: 20,10 minutes time; Clean silicon chip at 65 ~ 80 DEG C of temperature with SC-1 reagent, in SC-1 reagent, each composition volume ratio is NH
4oH: HO
2: H
2o=1: 1: 5,10 minutes time; Clean silicon chip at 20 ~ 25 DEG C of temperature with DHF, in DHF, each composition volume ratio is HF: H
2o=1: 10,10 minutes time; Clean silicon chip at 65 ~ 80 DEG C of temperature with SC-2 reagent, in SC-2 reagent, each composition volume ratio is HCl: H
2o
2: H
2o=1: 1: 6,10 minutes time; And rinse well with deionized water (DI), N2 dries up.
In such scheme, described use sputtering unit surface, silicon wafer polishing face after cleaning adopts RF plasma sputtering Ti/Al
2o
3in the step of nano particle film layer structure, Ti thickness is 50nm ~ 80nm, Al
2o
3thickness is 5 μm ~ 6 μm, film thickness uniformity ± 3%.
In such scheme, described this silicon chip grinding liner that utilizes carries out thinning step to InP material, comprising: utilize this silicon chip grinding liner, by treating that thinning InP material is loaded on grinding clamp, starts thinning; This silicon chip grinding liner rotating speed 30rpm ~ 60rpm, InP material rotation 80rpm ~ 200rpm, grinding milk adopts aqueous sodium hypochlorite solution and 3 μm of Al
2o
3powder, pH value 11 ~ 12.5, pressure 0.1kg/cm
2.The thinning final thickness of described InP material is 60 μm.
In such scheme, described step of InP material being carried out to chemico-mechanical polishing, comprising: use polyimide resin polishing pad, polishing slurries composition is: 30nm particle diameter SiO
2powder and Tetramethylammonium hydroxide 5 ~ 10% (volume ratio) aqueous solution, pH value 12, polishing pad rotating speed 40rpm ~ 50rpm, InP material rotation 100rpm ~ 120rpm, pressure 0.15kg/cm
2, the thickness after InP material finish is less than 30 μm, terminates CMP (Chemical Mechanical Polishing) process.
In such scheme, described step of cleaning the InP material completing chemico-mechanical polishing, comprising: the fatty alcohol-ether sodium sulfate aqueous solution of adoption rate 1: 10 cleans the InP material completing chemico-mechanical polishing, solution temperature 40 DEG C, after having cleaned, hot nitrogen is used to dry up.
In such scheme, described by cleaning after InP material put into the step that ICP etching machine carries out plasma polishing, comprising: adopt Cl
2gas 30sccm, Ar gas 2sccm, RF power 20W ~ 40W, ICP power 200W ~ 300W, etch 10 minutes ~ 15 minutes, then etch 10 ~ 15 minutes with He gas 5sccm, RF10W.
(3) beneficial effect
As can be seen from technique scheme, the present invention has following beneficial effect:
Of the present inventionly this method that is thinning and polishing is carried out to InP material, effectively raise the surface topography after InP substrate polishing.The thinning course of processing adopts Slag coating Al
2o
3rete, as thinning grinding carrier, sputters Al
2o
3nano particle rete uniformity is good, and compactness is high, and the thinning surface uniformity of the InP substrate therefore prepared is outstanding, and InP substrate damage is little, thinningly itself does not introduce other impurity, pollution-free.Al
2o
3again can sputter new rete after rete consumption completes to continue to use, efficiency is high, reproducible.The precision that the plasma polishing process of final stage achieves surface roughness significantly promotes, and reaches the mirror effect of extension rank, can remove the residual impurity on InP surface with He.InP substrate final thickness is less than 30 μm, thickness error ± 1 μm, and surface roughness Ra is less than 2nm.
Accompanying drawing explanation
Fig. 1 provided by the inventionly carries out method flow diagram that is thinning and polishing to InP material;
Fig. 2 adopts Slag coating deposit Ti/Al according to the present invention
2o
3the schematic diagram of nano particle film layer structure;
Fig. 3 adopts Ti/Al according to the present invention
2o
3nano particle rete carries out thinning schematic diagram.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Provided by the invention method that is thinning and polishing is carried out to InP material, comprises the following steps:
Step 1: standard RCA clean technique is carried out to silicon chip:
(1), silicon chip is cleaned at 100 DEG C ~ 130 DEG C temperature with SC-3 reagent: in SC-3 reagent, each composition volume ratio is H
2sO
4: H
2o
2: H
2o=1: 3: 20,10 minutes time;
(2), with SC-1 reagent clean silicon chip at 65 ~ 80 DEG C of temperature, in SC-1 reagent, each composition volume ratio is NH
4oH: HO2: H2O=1: 1: 5,10 minutes time;
(3), with DHF clean silicon chip at 20 ~ 25 DEG C of temperature, in DHF, each composition volume ratio is HF: H
2o=1: 10,10 minutes time;
(4), with SC-2 reagent clean silicon chip at 65 ~ 80 DEG C of temperature, in SC-2 reagent, each composition volume ratio is HCl: H
2o
2: H
2o=1: 1: 6,10 minutes time;
(5), with deionized water (DI) rinse well, N
2dry up;
Step 2: use the silicon wafer polishing face surface of sputtering unit after step 1 is cleaned to adopt RF plasma sputtering Ti/Al
2o
3nano particle film layer structure, Ti thickness 50nm ~ 80nm, Al
2o
3thickness 5 μm ~ 6 μm, film thickness uniformity ± 3%, shown in Fig. 2;
Step 3: carry out reduction process to InP material: using the silicon chip of step 2 as polishing pad, will treat that thinning InP substrate is loaded on grinding clamp, starts thinning (shown in Fig. 3).Silicon chip grinding liner rotating speed 30rpm ~ 60rpm, InP substrate rotation 80rpm ~ 200rpm, grinding milk adopts aqueous sodium hypochlorite solution and 3 μm of Al
2o
3powder, pH value 11 ~ 12.5, pressure 0.1kg/cm
2.The thinning final thickness of InP substrate is about 60 μm.
Step 4: chemico-mechanical polishing (CMP) technique is carried out to InP material: use polyimide resin polishing pad, polishing slurries composition is: 30nm particle diameter SiO
2powder and Tetramethylammonium hydroxide 5 ~ 10% (volume ratio) aqueous solution, pH value 12, polishing pad rotating speed 40rpm ~ 50rpm, InP substrate rotation 100rpm ~ 120rpm, pressure 0.15kg/cm
2, the thickness after InP substrate polishing is less than 30 μm, terminates CMP.
Step 5: cleaning is carried out to the InP material completing CMP: adopt volume ratio be 1: 10 the fatty alcohol-ether sodium sulfate aqueous solution the carrying out of step 4 is cleaned, solution temperature 40 DEG C, after clean, use hot nitrogen dry up.
Step 6: the InP substrate of step 5 being cleaned end is put into ICP etching machine and carried out plasma polishing process.Adopt Cl
230sccm, Ar2sccm, RF power 20W ~ 40W, ICP power 200W ~ 300W, etch 10 minutes ~ 15 minutes, then etch 10 minutes ~ 15 minutes with He gas 5sccm, RF10W.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a method that is thinning and polishing is carried out to InP material, it is characterized in that, comprising:
Make and thinning silicon chip grinding liner is carried out to InP material;
This silicon chip grinding liner is utilized to carry out thinning to InP material;
Chemico-mechanical polishing is carried out to InP material;
The InP material completing chemico-mechanical polishing is cleaned; And
InP material after cleaning is put into ICP etching machine and carries out plasma polishing;
Wherein, described making carries out the step of thinning silicon chip grinding liner to InP material, comprising: carry out standard RCA clean technique to silicon chip; And use sputtering unit surface, silicon wafer polishing face after cleaning to adopt RF plasma sputtering Ti/Al
2o
3nano particle film layer structure, forms silicon chip grinding liner;
Described by cleaning after InP material put into the step that ICP etching machine carries out plasma polishing, comprising: adopt Cl
2gas 30sccm, Ar gas 2sccm, RF power 20W ~ 40W, ICP power 200W ~ 300W, etch 10 minutes ~ 15 minutes, then etch 10 minutes ~ 15 minutes with He gas 5sccm, RF10W.
2. according to claim 1ly carry out method that is thinning and polishing to InP material, it is characterized in that, described step of silicon chip being carried out to standard RCA clean technique, comprising:
Silicon chip is cleaned at 100 DEG C ~ 130 DEG C temperature with SC-3 reagent: in SC-3 reagent, each composition volume ratio is H
2sO
4: H
2o
2: H
2o=1:3:20,10 minutes time;
Clean silicon chip at 65 DEG C ~ 80 DEG C temperature with SC-1 reagent, in SC-1 reagent, each composition volume ratio is NH
4oH:H
2o
2: H
2o=1:1:5,10 minutes time;
Clean silicon chip at 20 ~ 25 DEG C of temperature with DHF, in DHF, each composition volume ratio is HF:H
2o=1:10,10 minutes time;
Clean silicon chip at 65 DEG C ~ 80 DEG C temperature with SC-2 reagent, in SC-2 reagent, each composition volume ratio is HCl:H
2o
2: H
2o=1:1:6,10 minutes time; And
Clean with deionized water rinsing, N
2dry up.
3. according to claim 1ly carry out method that is thinning and polishing to InP material, it is characterized in that, described use sputtering unit surface, silicon wafer polishing face after cleaning adopts RF plasma sputtering Ti/Al
2o
3in the step of nano particle film layer structure, Ti thickness is 50nm ~ 80nm, Al
2o
3thickness is 5 μm ~ 6 μm, film thickness uniformity ± 3%.
4. according to claim 1ly carry out method that is thinning and polishing to InP material, it is characterized in that, described this silicon chip grinding liner that utilizes carries out thinning step to InP material, comprising:
Utilizing this silicon chip grinding liner, by treating that thinning InP material is loaded on grinding clamp, starting thinning; This silicon chip grinding liner rotating speed 30rpm ~ 60rpm, InP material rotation 80rpm ~ 200rpm, grinding milk adopts aqueous sodium hypochlorite solution and 3 μm of Al
2o
3powder, pH value 11 ~ 12.5, pressure 0.1kg/cm
2.
5. according to claim 4ly carry out method that is thinning and polishing to InP material, it is characterized in that, the thinning final thickness of described InP material is 60 μm.
6. according to claim 1ly carry out method that is thinning and polishing to InP material, it is characterized in that, described step of InP material being carried out to chemico-mechanical polishing, comprising:
Use polyimide resin polishing pad, polishing slurries composition is: volume ratio is the 30nm particle diameter SiO of 5 ~ 10%
2powder and tetramethylammonium hydroxide aqueous solution, pH value 12, polishing pad rotating speed 40rpm ~ 50rpm, InP material rotation 100rpm ~ 120rpm, pressure 0.15kg/cm
2, the thickness after InP material finish is less than 30 μm, terminates CMP (Chemical Mechanical Polishing) process.
7. according to claim 1ly carry out method that is thinning and polishing to InP material, it is characterized in that, described step of cleaning the InP material completing chemico-mechanical polishing, comprising:
Employing volume ratio is that the fatty alcohol-ether sodium sulfate aqueous solution of 1:10 cleans the InP material completing chemico-mechanical polishing, and solution temperature 40 DEG C, after having cleaned, uses hot nitrogen to dry up.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310068641.6A CN103199014B (en) | 2013-03-05 | 2013-03-05 | Method for thinning and polishing InP material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310068641.6A CN103199014B (en) | 2013-03-05 | 2013-03-05 | Method for thinning and polishing InP material |
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| Publication Number | Publication Date |
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| CN103199014A CN103199014A (en) | 2013-07-10 |
| CN103199014B true CN103199014B (en) | 2015-11-11 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI650392B (en) | 2016-02-16 | 2019-02-11 | 美商卡博特微電子公司 | Method for polishing III to V materials |
| CN105914137B (en) * | 2016-06-23 | 2019-07-26 | 北京知投家知识产权运营有限公司 | A kind of wet process silicon wafer cleaning method |
| CN106346318A (en) * | 2016-11-09 | 2017-01-25 | 苏州长光华芯光电技术有限公司 | InP (indium phosphide) wafer thinning and polishing method and chemical corrosion device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256952A (en) * | 2008-03-27 | 2008-09-03 | 薛松生 | Method and device for polishing wafer |
| CN102011106A (en) * | 2010-09-07 | 2011-04-13 | 天津理工大学 | Method for flattening diamond film by using composite process |
| CN102543665A (en) * | 2010-12-07 | 2012-07-04 | 中国科学院微电子研究所 | Improved rapid thinning method for gallium arsenide substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004337992A (en) * | 2003-05-13 | 2004-12-02 | Disco Abrasive Syst Ltd | Fixed abrasive grain polishing pad, and method of polishing silicon wafer using fixed abrasive grain polishing pad |
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2013
- 2013-03-05 CN CN201310068641.6A patent/CN103199014B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256952A (en) * | 2008-03-27 | 2008-09-03 | 薛松生 | Method and device for polishing wafer |
| CN102011106A (en) * | 2010-09-07 | 2011-04-13 | 天津理工大学 | Method for flattening diamond film by using composite process |
| CN102543665A (en) * | 2010-12-07 | 2012-07-04 | 中国科学院微电子研究所 | Improved rapid thinning method for gallium arsenide substrate |
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