CN103137443B - The formation method of amorphous carbon hard mask layer and lithographic method - Google Patents
The formation method of amorphous carbon hard mask layer and lithographic method Download PDFInfo
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- CN103137443B CN103137443B CN201110383465.6A CN201110383465A CN103137443B CN 103137443 B CN103137443 B CN 103137443B CN 201110383465 A CN201110383465 A CN 201110383465A CN 103137443 B CN103137443 B CN 103137443B
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Abstract
A formation method for amorphous carbon hard mask layer, comprising: provide Semiconductor substrate; Form initial amorphous carbon hard mask layer on the semiconductor substrate, the reaction temperature forming described initial amorphous carbon hard mask layer is 200 ~ 300 degrees Celsius; Adopt containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment, form amorphous carbon hard mask layer.The formation method of amorphous carbon hard mask layer of the present invention, adopt low temperature process to form initial amorphous carbon hard mask layer, adopt containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment, form the amorphous carbon hard mask layer that compactness is high, reduce heat budget, improve device stability.
Description
Technical field
The present invention relates to field of semiconductor fabrication, particularly a kind of formation method of amorphous carbon hard mask layer and lithographic method.
Background technology
Semiconductor integrated circuit makes and utilizes the series of process such as photoetching, etching, injection and deposition on same silicon substrate, form a large amount of various types of complex devices, and it is connected to each other have complete electric function.Along with developing rapidly of very lagre scale integrated circuit (VLSIC), the integrated level of chip is more and more higher, and the size of components and parts is more and more less, because the high density of device, the impact of various effects on the making result of semiconductor technology of small size initiation also become increasingly conspicuous.
For hard mask technique, after semiconductor technology enters 90nm, because of lithographic dimensioned more and more less, normal needs form the mask pattern that hard mask layer coordinates photoresist to be formed on the surface of wafer, amorphous carbon hard mask layer, because of its high etching selection ratio relative to silica, silicon nitride and silicon in etching technics, is widely used in semiconductor fabrication process.
The formation of existing amorphous carbon hard mask layer is that using plasma strengthens chemical vapor deposition method (PECVD), the high temperature adopting 400 ~ 600 degrees Celsius is formed in amorphous carbon hard mask layer process in plasma enhanced chemical vapor deposition technique, the uniformity of the amorphous carbon hard mask layer thickness formed under existing high temperature is bad, heat budget is high, affects the stability of device.
More manufacture methods about hard mask layer please refer to the United States Patent (USP) that the patent No. is US6110837.
Summary of the invention
The problem that the present invention solves is to provide a kind of formation method and lithographic method of amorphous carbon hard mask layer, improves the uniformity of amorphous carbon hard mask layer thickness, reduces heat budget, provides the stability of device.
For solving the problem, the invention provides a kind of formation method of amorphous carbon hard mask layer, comprising:
Semiconductor substrate is provided;
Form initial amorphous carbon hard mask layer on the semiconductor substrate, the reaction temperature forming described initial amorphous carbon hard mask layer is 200 ~ 300 degrees Celsius;
Adopt containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment, form amorphous carbon hard mask layer.
Optionally, form described initial amorphous carbon hard mask layer using plasma and strengthen chemical vapor deposition method, the gas of employing is C
3h
6, C
2h
4or C
2h
2.
Optionally, the described gas containing nitrogen plasma treatment employing is N
2or NH
3.
Optionally, the described flow containing nitrogen plasma treatment employing gas is 3000 ~ 20000sccm.
Optionally, the described time containing nitrogen plasma treatment is 5 ~ 180 seconds.
Optionally, the described power containing nitrogen plasma treatment is 20 ~ 300 watts.
Optionally, the described pressure containing nitrogen plasma treatment is 1 ~ 30Torr.
Present invention also offers a kind of lithographic method, comprising:
Semiconductor substrate is provided;
Form material layer to be etched on the semiconductor substrate;
Form initial amorphous carbon hard mask layer in described material surface to be etched, the reaction temperature forming described initial amorphous carbon hard mask layer is 200 ~ 300 degrees Celsius;
Adopt containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment, form amorphous carbon hard mask layer;
Form patterned photoresist layer on described amorphous carbon hard mask layer surface, with described patterned photoresist layer for mask, remove the amorphous carbon hard mask layer exposed;
With described patterned photoresist layer and amorphous carbon hard mask layer for mask, etch described material layer to be etched.
Optionally, form described initial amorphous carbon hard mask layer using plasma and strengthen chemical vapor deposition method, the gas of employing is C
3h
6, C
2h
4or C
2h
2.
Optionally, the described gas containing nitrogen plasma treatment employing is N
2or NH
3.
Optionally, the described flow containing nitrogen plasma treatment employing gas is 3000 ~ 20000sccm.
Optionally, the described time containing nitrogen plasma treatment is 5 ~ 180 seconds.
Optionally, the described power containing nitrogen plasma treatment is 20 ~ 300 watts.
Optionally, the described pressure containing nitrogen plasma treatment is 1 ~ 30Torr.
Compared with prior art, technical solution of the present invention has the following advantages:
After forming initial amorphous carbon hard mask layer, carry out forming amorphous carbon hard mask layer containing plasma pretreatment to the initial amorphous carbon hard mask layer of described formation, C-or the C-C key of the instability in initial amorphous carbon hard mask layer is reacted and forms stable C-H or C-N-H key, thus form fine and close amorphous carbon hard mask layer, containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment time, because initial amorphous carbon hard mask layer compactness is poor, the physical bombardment interaction energy of plasma is removed the projection on initial amorphous carbon hard mask layer surface or makes protruding height reduction, thus form the good amorphous carbon hard mask layer of thickness evenness, follow-up when forming photoresist layer on amorphous carbon hard mask layer, good litho pattern can be formed, keep the consistency of photoetching critical size, with graphical photoresist layer for described in mask etching during amorphous carbon hard mask layer, can be formed smooth and without distortion sidewall etch topography.
In addition, the temperature adopted when forming initial amorphous carbon hard mask layer is 200 ~ 300 degrees Celsius, reduces heat budget.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the formation method of the present invention's embodiment amorphous carbon hard mask layer;
Fig. 2 ~ Fig. 3 is the cross-sectional view of the forming process of embodiment of the present invention amorphous carbon hard mask layer;
Fig. 4 is the schematic flow sheet of inventive embodiments lithographic method;
Fig. 5 ~ Fig. 9 is the cross-sectional view of embodiment of the present invention lithographic method;
Figure 10 is the contrast schematic diagram of the etching selection ratio of the amorphous carbon hard mask layer that the amorphous carbon hard mask layer that formed the embodiment of the present invention of the material layer to be etched of silica and silicon and prior art are formed.
Embodiment
Inventor finds in the process making amorphous carbon hard mask layer, when existing using plasma enhancing chemical vapor deposition method (PECVD) forms amorphous carbon hard mask layer, due to the high temperature that reaction temperature is 400 ~ 600 degrees Celsius, higher temperature affects the distribution of Doped ions in substrate or (polysilicon) POLY and activity, the higher this impact of temperature is more serious, improve the heat budget making amorphous carbon hard mask layer, and the uniformity of the thickness of the amorphous carbon hard mask layer that high temperature is formed is bad, follow-up when forming photoresist layer on amorphous carbon hard mask layer, affect the uniformity of photoresist layer thickness, abnormal litho pattern is formed after exposure imaging, reduce the stability of device.
In order to reduce heat budget, inventor attempts adopting the low temperature being less than 400 degrees Celsius to form amorphous carbon hard mask layer, but the amorphous carbon hard mask layer that this temperature is formed is very loose, compactness is poor, easily forms irregular figure during etching.
For solving the problem, inventor proposes a kind of formation method of amorphous carbon hard mask layer, comprising: provide Semiconductor substrate; Form initial amorphous carbon hard mask layer on the semiconductor substrate; Adopt containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment, form amorphous carbon hard mask layer.
The formation method of amorphous carbon hard mask layer of the present invention, after forming initial amorphous carbon hard mask layer, carry out forming amorphous carbon hard mask layer containing plasma pretreatment to the initial amorphous carbon hard mask layer of described formation, C-or the C-C key of the instability in initial amorphous carbon hard mask layer is reacted and forms stable C-H or C-N-H key, thus form fine and close amorphous carbon hard mask layer, containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment time, because initial amorphous carbon hard mask layer compactness is poor, the physical bombardment interaction energy of plasma is removed the projection on initial amorphous carbon hard mask layer surface or makes protruding height reduction, thus form the good amorphous carbon hard mask layer of thickness evenness, follow-up when forming photoresist layer on amorphous carbon hard mask layer, good litho pattern can be formed, keep the consistency of photoetching critical size, with graphical photoresist layer for described in mask etching during amorphous carbon hard mask layer, can be formed smooth and without distortion sidewall etch topography, adopt low temperature process to form initial amorphous carbon hard mask layer, reduce heat budget, improve device stability.
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.When describing the embodiment of the present invention in detail, for ease of illustrating, schematic diagram can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and it should not limit the scope of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
Be the schematic flow sheet of the formation method of the present invention's embodiment amorphous carbon hard mask layer with reference to figure 1, Fig. 1, comprise:
Step S20, provides Semiconductor substrate;
Step S21, forms initial amorphous carbon hard mask layer on the semiconductor substrate, and the reaction temperature forming described initial amorphous carbon hard mask layer is 200 ~ 300 degrees Celsius;
Step S22, adopts containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment, forms amorphous carbon hard mask layer.
Fig. 2 ~ Fig. 3 is the cross-sectional view of the formation method of embodiment of the present invention amorphous carbon hard mask layer.
With reference to figure 2, provide Semiconductor substrate 200, described Semiconductor substrate 200 forms initial amorphous carbon hard mask layer 201, the reaction temperature forming described initial amorphous carbon hard mask layer 201 is 200 ~ 300 degrees Celsius.
The material of described Semiconductor substrate 20 can be monocrystalline silicon (Si), monocrystalline germanium (Ge) or SiGe (GeSi), carborundum (SiC); Also can be silicon-on-insulator (SOI), germanium on insulator (GOI); Or can also be other material, the III-V such as such as GaAs.
Form described initial amorphous carbon hard mask layer 201 using plasma and strengthen chemical vapor deposition method, reaction temperature is 200 ~ 300 degrees Celsius, and the gas that described plasma enhanced chemical vapor deposition technique adopts is C
3h
6or C
2h
4or C
2h
2in hydrocarbon.
The temperature forming described initial amorphous carbon hard mask layer 201 employing is 200 ~ 300 degrees Celsius, compared to 400 ~ 600 degrees Celsius of prior art, greatly reduces reaction temperature, reduces the heat budget of semiconductor device.But 200 ~ 300 degrees Celsius the initial amorphous carbon hard mask layer formed is very loose, compactness is poor, easily form irregular figure (sidewall roughness or distortion) during etching, directly can not use as hard mask layer in semiconductor fabrication process.
Referring to figs. 2 and 3, adopt containing amorphous carbon hard mask layer 201 initial described in nitrogen plasma treatment, form amorphous carbon hard mask layer 202.
The described gas containing nitrogen plasma treatment employing is N
2or NH
3, the flow of gas is 3000 ~ 20000sccm, and the time of process is 5 ~ 180 seconds, and the power of process is 20 ~ 300 watts, and the pressure of process is 1 ~ 30Torr (1Torr=133Pa).Can not be too large containing amorphous carbon hard mask layer 201 power initial described in nitrogen plasma treatment, the words Ions Bombardment effect that power is too large can be stronger, can cause damage to initial amorphous carbon hard mask layer 201, and adopt less pressure containing amorphous carbon hard mask layer 201 initial described in nitrogen plasma treatment, pressure is excessive causes the mean free path containing nitrogen plasma short, large containing collision probability between nitrogen plasma, make the effect containing amorphous carbon hard mask layer 201 initial described in nitrogen plasma treatment and efficiency reduction.The above-mentioned temperature lower containing plasma pretreatment employing, generally lower than 200 degrees Celsius, therefore the heat budget of this step increase is limited.
Adopt containing amorphous carbon hard mask layer 201 initial described in nitrogen plasma treatment, C-or the C-C key of the instability in initial amorphous carbon hard mask layer 201 is reacted and forms stable C-H or C-N-H key, thus form fine and close amorphous carbon hard mask layer 202, containing described in nitrogen plasma treatment during initial amorphous carbon hard mask layer 201, because initial amorphous carbon hard mask layer 201 compactness is poor, the physical bombardment interaction energy of plasma is removed the projection (part that initial amorphous carbon hard mask layer 201 thickness is thicker) on initial amorphous carbon hard mask layer 201 surface or makes protruding height reduction, thus form the good amorphous carbon hard mask layer 202 of thickness evenness, the improvement of the uniformity of this thickness clearly, and the amorphous carbon hard mask layer that prior art is formed, because its compactness is higher relative to initial amorphous carbon hard mask layer 201, using plasma process is difficult to the uniformity improving its thickness, therefore, the embodiment of the present invention adopts the amorphous carbon hard mask layer 202 formed containing nitrogen plasma treatment initial amorphous carbon hard mask layer 201 to form compared to prior art the uniformity that amorphous carbon hard mask layer has better compactness and thickness.
Apply the schematic flow sheet of the lithographic method of above-mentioned amorphous carbon hard mask layer with reference to figure 4 for inventive embodiments, comprising:
Step S30, provides Semiconductor substrate;
Step S31, forms material layer to be etched on the semiconductor substrate;
Step S32, forms initial amorphous carbon hard mask layer in described material surface to be etched, and the reaction temperature forming described initial amorphous carbon hard mask layer is 200 ~ 300 degrees Celsius;
Step S33, adopts containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment, forms amorphous carbon hard mask layer;
Step S34, forms patterned photoresist layer on described amorphous carbon hard mask layer surface, with described patterned photoresist layer for mask, removes the amorphous carbon hard mask layer exposed;
Step S35, with described patterned photoresist layer and amorphous carbon hard mask layer for mask, etches described material layer to be etched.
Fig. 5 ~ Fig. 9 is the cross-sectional view that the embodiment of the present invention applies the lithographic method of above-mentioned amorphous carbon hard mask layer.
With reference to figure 5, provide Semiconductor substrate 300; Described Semiconductor substrate 300 forms material layer 301 to be etched.
The material of described Semiconductor substrate 300 can be monocrystalline silicon (Si), monocrystalline germanium (Ge) or SiGe (GeSi), carborundum (SiC); Also can be silicon-on-insulator (SOI), germanium on insulator (GOI); Or can also be other material, the III-V such as such as GaAs.
Described material layer to be etched 301 is the dielectric layer material such as silica, silicon nitride, silicon oxynitride; Also can be monocrystalline silicon, polysilicon; Or metal and the containing metal class material such as aluminium, tungsten, copper, titanium nitride, tantalum nitride; Or can also be other material.
With reference to figure 6, form initial amorphous carbon hard mask layer 302 on described material layer 301 surface to be etched, the reaction temperature forming described initial amorphous carbon hard mask layer 302 is 200 ~ 300 degrees Celsius.
The temperature forming described initial amorphous carbon hard mask layer 302 employing is 200 ~ 300 degrees Celsius, compared to 400 ~ 600 degrees Celsius of prior art, greatly reduces reaction temperature, reduces the heat budget of semiconductor device.But 200 ~ 300 degrees Celsius the initial amorphous carbon hard mask layer formed is very loose, compactness is poor, easily form irregular figure (sidewall roughness or distortion) during etching, directly can not use as hard mask layer in semiconductor fabrication process.
With reference to figure 7, adopt containing amorphous carbon hard mask layer 302 initial described in nitrogen plasma treatment, form amorphous carbon hard mask layer 303.
The described gas containing nitrogen plasma treatment employing is N
2or NH
3, the flow of gas is 3000 ~ 20000sccm, and the time of process is 5 ~ 180 seconds, and the power of process is 20 ~ 300 watts, and the pressure of process is 1 ~ 30Torr.Can not be too large containing amorphous carbon hard mask layer 302 power initial described in nitrogen plasma treatment, the words Ions Bombardment effect that power is too large can be stronger, can cause damage to initial amorphous carbon hard mask layer 302, and containing the pressure that the employing of nitrogen plasma treatment is less, pressure is excessive causes the mean free path containing nitrogen plasma short, large containing collision probability between nitrogen plasma, make the effect containing initial amorphous carbon hardmask 302 described in nitrogen plasma treatment and efficiency reduction.The above-mentioned temperature lower containing plasma pretreatment employing, generally lower than 200 degrees Celsius, therefore the heat budget of this step increase is limited.
Adopt containing amorphous carbon hard mask layer 302 initial described in nitrogen plasma treatment, C-or the C-C key of the instability in initial amorphous carbon hard mask layer 302 is reacted and forms stable C-H or C-N-H key, C-or the C-C key of the instability in initial amorphous carbon hard mask layer 302 is reacted and forms stable C-H or C-N-H key, thus form fine and close amorphous carbon hard mask layer 303, containing described in nitrogen plasma treatment during initial amorphous carbon hard mask layer 302, because initial amorphous carbon hard mask layer 302 compactness is poor, the physical bombardment interaction energy of plasma is removed the projection (part that initial amorphous carbon hard mask layer 201 thickness is thicker) on initial amorphous carbon hard mask layer 302 surface or makes protruding height reduction, thus form the good amorphous carbon hard mask layer 303 of thickness evenness, the improvement of the uniformity of this thickness is especially obvious, and the amorphous carbon hard mask layer that prior art is formed, because its compactness is higher relative to initial amorphous carbon hard mask layer 302, using plasma process is difficult to the uniformity improving its thickness, therefore, the embodiment of the present invention adopts the amorphous carbon hard mask layer 303 formed containing nitrogen plasma treatment initial amorphous carbon hard mask layer 302 to form compared to prior art the uniformity that amorphous carbon hard mask layer has better compactness and thickness, follow-up when forming photoresist layer on amorphous carbon hard mask layer 303, form good litho pattern, keep the consistency of photoetching critical size, with graphical photoresist layer for described in mask etching during amorphous carbon hard mask layer 303, can be formed smooth and without the etch topography of sidewall of distortion.
In the lump with reference to figure 8 and Fig. 9, form patterned photoresist layer 304 on described amorphous carbon hard mask layer 303 surface, with described patterned photoresist layer 304 for mask, remove the amorphous carbon hard mask layer 303 exposed; With described patterned photoresist layer 303 and amorphous carbon hard mask layer 303 for mask, etch described material layer to be etched 301.
With reference to Figure 10, the contrast schematic diagram of the etching selection ratio of Figure 10 amorphous carbon hard mask layer that to be inventor formed the embodiment of the present invention through the material layer to be etched of testing silica and the silicon drawn and the amorphous carbon hard mask layer that prior art is formed, abscissa is the material of material layer to be etched, ordinate material layer to be etched is to amorphous carbon hard mask layer etching selection ratio, wherein D and F be respectively adopt the embodiment of the present invention formed amorphous carbon hard mask layer be mask etching silica and silicon time, silica and silicon are to the etching selection ratio of amorphous carbon hard mask layer, be 9.9: 1 and 10: 1, C and E be respectively adopt prior art formed amorphous carbon hard mask layer be mask etching silica and silicon time, silica and silicon, to the etching selection ratio of amorphous carbon hard mask layer, are 9.9: 1 and 11: 1.Therefore to be mask etching silica to form amorphous carbon hard mask layer to silica and the identical of silicon or the very little etching selection ratio of gap with reaching during silicon to the amorphous carbon hard mask layer adopting the embodiment of the present invention to be formed with prior art, therefore adopt the amorphous carbon hard mask layer of the embodiment of the present invention amorphous carbon hard mask layer method of being formationed formation except there is the aforementioned good compactness mentioned and thickness evenness and lower heat budget, the etching selection specific characteristic of amorphous carbon hard mask layer can not be affected.
To sum up, the formation method of the amorphous carbon hard mask layer that the embodiment of the present invention provides and lithographic method, after forming initial amorphous carbon hard mask layer, carry out forming amorphous carbon hard mask layer containing plasma pretreatment to the initial amorphous carbon hard mask layer of described formation, C-or the C-C key of the instability in initial amorphous carbon hard mask layer is reacted and forms stable C-H or C-N-H key, thus form fine and close amorphous carbon hard mask layer, containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment time, because initial amorphous carbon hard mask layer compactness is poor, the physical bombardment interaction energy of plasma is removed the projection on initial amorphous carbon hard mask layer surface or makes protruding height reduction, thus form the good amorphous carbon hard mask layer of thickness evenness, follow-up when forming photoresist layer on amorphous carbon hard mask layer, good litho pattern can be formed, keep the consistency of photoetching critical size, with graphical photoresist layer for described in mask etching during amorphous carbon hard mask layer, can be formed smooth and without distortion sidewall etch topography.
Adopt temperature to be 200 ~ 300 degrees Celsius when forming initial amorphous carbon hard mask layer, reduce heat budget.
In addition, the amorphous carbon hard mask layer that the embodiment of the present invention is formed, can not affect the etching selection specific characteristic of amorphous carbon hard mask layer.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection range of technical solution of the present invention.
Claims (14)
1. a formation method for amorphous carbon hard mask layer, is characterized in that, comprising:
Semiconductor substrate is provided;
Form initial amorphous carbon hard mask layer on the semiconductor substrate, form described initial amorphous carbon hard mask layer using plasma and strengthen chemical vapor deposition method, the reaction temperature forming described initial amorphous carbon hard mask layer is 200 ~ 300 degrees Celsius;
Adopt containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment, form amorphous carbon hard mask layer.
2. the formation method of amorphous carbon hard mask layer as claimed in claim 1, it is characterized in that, in described plasma enhanced chemical vapor deposition technique, the gas of employing is C
3h
6, C
2h
4or C
2h
2.
3. the formation method of amorphous carbon hard mask layer as claimed in claim 1, is characterized in that, the described gas containing nitrogen plasma treatment employing is N
2or NH
3.
4. the formation method of amorphous carbon hard mask layer as claimed in claim 3, is characterized in that, the described flow containing nitrogen plasma treatment employing gas is 3000 ~ 20000sccm.
5. the formation method of amorphous carbon hard mask layer as claimed in claim 1, is characterized in that, the described time containing nitrogen plasma treatment is 5 ~ 180 seconds.
6. the formation method of amorphous carbon hard mask layer as claimed in claim 1, is characterized in that, the described power containing nitrogen plasma treatment is 20 ~ 300 watts.
7. the formation method of amorphous carbon hard mask layer as claimed in claim 1, is characterized in that, the described pressure containing nitrogen plasma treatment is 1 ~ 30Torr.
8. a lithographic method, is characterized in that, comprising:
Semiconductor substrate is provided;
Form material layer to be etched on the semiconductor substrate;
Initial amorphous carbon hard mask layer is formed in described material surface to be etched, form described initial amorphous carbon hard mask layer using plasma and strengthen chemical vapor deposition method, the reaction temperature forming described initial amorphous carbon hard mask layer is 200 ~ 300 degrees Celsius;
Adopt containing amorphous carbon hard mask layer initial described in nitrogen plasma treatment, form amorphous carbon hard mask layer;
Form patterned photoresist layer on described amorphous carbon hard mask layer surface, with described patterned photoresist layer for mask, remove the amorphous carbon hard mask layer exposed;
With described patterned photoresist layer and amorphous carbon hard mask layer for mask, etch described material layer to be etched.
9. lithographic method as claimed in claim 8, it is characterized in that, in described plasma enhanced chemical vapor deposition technique, the gas of employing is C
3h
6, C
2h
4or C
2h
2.
10. lithographic method as claimed in claim 8, is characterized in that, the described gas containing nitrogen plasma treatment employing is N
2or NH
3.
11. lithographic methods as claimed in claim 10, is characterized in that, the described flow containing nitrogen plasma treatment employing gas is 3000 ~ 20000sccm.
12. lithographic methods as claimed in claim 8, is characterized in that, the described time containing nitrogen plasma treatment is 5 ~ 180 seconds.
13. lithographic methods as claimed in claim 8, is characterized in that, the described power containing nitrogen plasma treatment is 20 ~ 300 watts.
14. lithographic methods as claimed in claim 8, is characterized in that, the described pressure containing nitrogen plasma treatment is 1 ~ 30Torr.
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| CN104445049B (en) * | 2013-09-24 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | MEMS forming method |
| CN105448647A (en) * | 2014-07-29 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing Bump defect in hydrogenated amorphous carbon film layer |
| CN108695141A (en) * | 2017-04-07 | 2018-10-23 | 新南威尔士大学创新公司 | A kind of method of patterned material |
| CN109427551B (en) * | 2017-09-04 | 2021-05-25 | 中微半导体设备(上海)股份有限公司 | Substrate etching method and corresponding processing device |
| CN107968094A (en) * | 2017-11-21 | 2018-04-27 | 长江存储科技有限责任公司 | A kind of ledge structure forming technology for 3D nand flash memories |
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| US5981398A (en) * | 1998-04-10 | 1999-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hard mask method for forming chlorine containing plasma etched layer |
| US6875664B1 (en) * | 2002-08-29 | 2005-04-05 | Advanced Micro Devices, Inc. | Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material |
| US7368390B2 (en) * | 2001-10-29 | 2008-05-06 | Infineon Technologies Ag | Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process |
| CN101320224A (en) * | 2007-03-21 | 2008-12-10 | 应用材料公司 | Halogen-free amorphous carbon mask etch having high selectivity to photoresist |
| CN101473062A (en) * | 2006-06-23 | 2009-07-01 | 应用材料股份有限公司 | Methods to improve the in-film defectivity of PECVD amorphous carbon films |
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|---|---|---|---|---|
| US5981398A (en) * | 1998-04-10 | 1999-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hard mask method for forming chlorine containing plasma etched layer |
| US7368390B2 (en) * | 2001-10-29 | 2008-05-06 | Infineon Technologies Ag | Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process |
| US6875664B1 (en) * | 2002-08-29 | 2005-04-05 | Advanced Micro Devices, Inc. | Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material |
| CN101473062A (en) * | 2006-06-23 | 2009-07-01 | 应用材料股份有限公司 | Methods to improve the in-film defectivity of PECVD amorphous carbon films |
| CN101320224A (en) * | 2007-03-21 | 2008-12-10 | 应用材料公司 | Halogen-free amorphous carbon mask etch having high selectivity to photoresist |
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