CN103500707B - Method for electrochemically thinning and polishing InP-based RFIC wafer - Google Patents
Method for electrochemically thinning and polishing InP-based RFIC wafer Download PDFInfo
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- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 22
- 238000001259 photo etching Methods 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 238000005275 alloying Methods 0.000 claims abstract description 9
- 230000002238 attenuated effect Effects 0.000 claims description 42
- 230000005518 electrochemistry Effects 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
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- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 6
- 238000001291 vacuum drying Methods 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 3
- 229920000604 Polyethylene Glycol 200 Polymers 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
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- 238000005868 electrolysis reaction Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000006056 electrooxidation reaction Methods 0.000 claims description 3
- 229960003511 macrogol Drugs 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 230000002000 scavenging effect Effects 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
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- 238000007517 polishing process Methods 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 abstract 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
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- 239000004065 semiconductor Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- Engineering & Computer Science (AREA)
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a method for electrochemically thinning and polishing an InP-based RFIC wafer, which comprises the following steps: cleaning an InP-based RFIC wafer; coating photoresist on the surface of the InP-based RFIC wafer; carrying out electrode pattern photoetching on the InP-based RFIC wafer; manufacturing a metal electrode on the InP-based RFIC wafer; cleaning an InP-based RFIC wafer; performing rapid alloying on the InP-based RFIC wafer; coating photoresist on the surface of the InP-based RFIC wafer; performing lead pattern photoetching on the InP-based RFIC wafer; manufacturing lead metal for the InP-based RFIC wafer; connecting the InP-based RFIC wafer into a lead; performing electrochemical polishing on the InP-based RFIC wafer; and stripping the InP-based RFIC wafer to finish thinning and polishing. The invention effectively avoids the damage caused by mechanical thinning, realizes the stress release in the thinning and polishing process, realizes the mirror effect of the polished surface of the substrate, and provides a new solution for solving the technical problem of thinning and polishing of InP ultrathin thickness.
Description
Technical field
The present invention relates to InPRFIC preparing technical field, particularly relate to a kind of method of InP-base radio frequency integrated circuit (RadioFrequencyIntegratedCircuit, RFIC) wafer being carried out to electrochemistry attenuated polishing.
Background technology
Along with new and high technology is constantly applied to military field, frequency microwave signal frequency is more and more higher, and frequency range is more and more wider, and the disposal ability of digit chip is more and more stronger, and modern war has progressed into information age and digital times.The fast development of electronic device makes the transmission rate of signal more and more faster; III-V relies on its excellent frequency characteristic, and its semiconductor device and relevant very high speed digital/Digital Analog Hybrid Circuits are becoming one of core component of the modernization defence equipments such as military communication, radar, guidance, space defense, high-speed intelligent weapon and electronic countermeasures.
Particularly in Terahertz research field, the use of InP material is in the ascendant.In numerous Group III-V compound semiconductor devices, InP material has unique advantage, this mainly has benefited from its excellent material behavior, such as very little between InGaAs and InP lattice mismatch, and very high electron saturation velocities etc., no matter so HEMT-structure or HBT structure, there are very excellent high frequency, high-power performance.
But the physical property of InP material is very poor, very frangible, very little collision or vibration all can cause that wafer is cracked and all that has been achieved is spoiled, and therefore InP material volume manufacture processing just faces an a lot of technologic difficult problem.In ultra-high frequency, powerful InPRFIC manufacturing process, have one be must in the face of and the difficult problem that solves, be exactly its attenuated polishing technique, this is mainly because two reasons determine.One, the heat that high-power RFIC operationally produces is very large, and cause noise to increase because heating makes the temperature of RFIC raise, distorted signals, can cause RFIC to burn the result of inefficacy when serious.Its two because hyperfrequency, particularly require resistance and the electric capacity of very low parasitism at the RFIC of terahertz wave band work, InP-base material substrate must reach very slim thickness and very high fineness, is similar to mirror effect.
For above 2 points, the solution of comparative maturity carries out attenuated polishing to InP-base RFIC wafer substrate, makes the thickness that InP-base RFIC wafer reaches very thin, and the surface of attenuated polishing will realize mirror effect to meet the strongly adherent of back metal.After attenuated polishing technique completes, make large-area heat radiating metal at InP-base RFIC wafer substrate burnishing surface, front RFIC circuit and backside heat metal are passed through metallic communication, realizes effective release of heat, reduce ghost effect.
Based on this solution, for the physical property of InP material fragility, this invention exploits a kind of method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing, with the stress problem that the mechanical damage solved in attenuated polishing process is brought, the stress reaching thinning process effectively discharges, and reaches the low stress ultrathin attenuated polishing object realizing InP.
(2) technical scheme
For achieving the above object, the invention provides a kind of method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing, comprising: step 1: InP-base RFIC wafer is cleaned; Step 2: at InP-base RFIC crystal column surface coating photoresist; Step 3: electrode pattern photoetching is carried out to InP-base RFIC wafer; Step 4: to InP-base RFIC wafer manufacturing metal electrode; Step 5: InP-base RFIC wafer is cleaned; Step 6: rapid alloying is carried out to InP-base RFIC wafer; Step 7: at InP-base RFIC crystal column surface coating photoresist; Step 8: the photoetching of lead-in wire figure is carried out to InP-base RFIC wafer; Step 9: to InP-base RFIC wafer manufacturing lead-in wire metal; Step 10: InP-base RFIC wafer is connected into wire; Step 11: electrochemical polish is carried out to InP-base RFIC wafer; Step 12: InP-base RFIC wafer is peeled off, completes attenuated polishing.
In such scheme, described in step 1, InP-base RFIC wafer is cleaned, comprising: InP-base RFIC wafer is immersed deionized water and carries out ultrasonic cleaning, scavenging period 20 minutes, takes out afterwards and use hot N
2dry up.
In such scheme, at InP-base RFIC crystal column surface coating photoresist described in step 2, comprising: first at InP-base RFIC crystal column surface spraying HMDS, toast 10 minutes in 180 DEG C of vacuum drying ovens, apply S9920 photoresist afterwards, thick 3 μm of glue, toast 100 seconds on 100 DEG C of hot plates afterwards.
In such scheme, described in step 3, electrode pattern photoetching is carried out to InP-base RFIC wafer, comprising: electrode pattern photoetching is carried out to InP-base RFIC wafer, after development, form the electrode pattern of electrochemical polish.
In such scheme, to InP-base RFIC wafer manufacturing metal electrode described in step 4, comprise: for the electrode pattern of InP-base RFIC wafer, metal electrode is made by electron beam evaporation platform, electrode metal composition is Ni/Ge/Au/Ge/Ni/Au, and its thickness is respectively Ni3nm/Ge3nm/Au45nm/Ge4nm/Ni6nm/Au200nm.
In such scheme, clean, comprising described in step 5 to InP-base RFIC wafer: clean InP-base RFIC wafer, adopt ultrasonic 10 minutes of acetone, EtOH Sonicate 10 minutes, ultrasonic 10 minutes of deionized water, finally uses hot N
2dry up.
In such scheme, described in step 6, rapid alloying is carried out to InP-base RFIC wafer, comprising: InP-base RFIC wafer is carried out rapid alloying, N
2atmosphere, alloy temperature 370 ~ 385 DEG C, 30 ~ 50 seconds time.
In such scheme, at InP-base RFIC crystal column surface coating photoresist described in step 7, comprising: first spray HMDS at InP-base RFIC crystal column surface, toast 10 minutes in 180 DEG C of vacuum drying ovens, apply S9920 photoresist afterwards, thick 4 μm of glue, toast 100 seconds on 100 DEG C of hot plates afterwards.
In such scheme, described in step 8, the photoetching of lead-in wire figure is carried out to InP-base RFIC wafer, comprising: the photoetching of lead-in wire figure is carried out to InP-base RFIC wafer, after development, form the electrode lead pattern of electrochemical polish.
In such scheme, to InP-base RFIC wafer manufacturing lead-in wire metal described in step 9, comprising: cover sheet to InP-base RFIC wafer covers, carry out sputtering technology, make lead-in wire metal, lead-in wire metal thickness is Ti50nm, Au80nm.
In such scheme, described in step 10, InP-base RFIC wafer is connected into wire, comprises: InP-base RFIC wafer conductive silver paste is sticked on vacuum polytetrafluoroethylene fixture, and wire is connected upper conductive silver paste.
In such scheme, described in step 11, electrochemical polish is carried out to InP-base RFIC wafer, comprising: immersed in electrochemical corrosion groove by InP-base RFIC wafer and carry out electrochemical polish, electrochemical corrosive liquid main component is mo1L
-1naCl aqueous solution 1L, add 200ml Macrogol 200 (PEG200), HCl30ml, adds polyimide particles, particle diameter 500nm, electrolysis tank heating-up temperature 65 ~ 85 DEG C, external dc electric current 6V ~ 8V, adopts magnetic stirrer to stir.
In such scheme, described in step 12, InP-base RFIC wafer is peeled off, complete attenuated polishing, comprise: the InP-base RFIC wafer of step 11 is taken out, use deionized water to rinse, then put into acetone and carry out ultrasonic stripping, the photoresist of removal step 7, separate InP-base RFIC wafer, complete attenuated polishing technique.
(3) beneficial effect
As can be seen from technique scheme, the present invention has following beneficial effect:
This method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing provided by the invention, have employed electrochemical principle, different from conventional machinery or CMP, its advantage effectively avoids the damage that mechanical reduction causes, have employed soft polyimide particles as polishing material, cutting cut can not be formed, magnetic is coordinated to stir the liquid motion of formation, electrochemistry liquid is coordinated to carry out attenuated polishing, above had superiority result is that of obtaining smooth crystal column surface, well achieve the Stress Release in attenuated polishing process, achieve the mirror effect of substrate burnishing surface, for the attenuated polishing demand solving InP ultrathin provides new process means.
Accompanying drawing explanation
Fig. 1 is method flow diagram InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to the embodiment of the present invention;
Fig. 2 is the schematic diagram of the photoresist structure of the employing of the foundation embodiment of the present invention;
Fig. 3 is the schematic diagram of the electrode photolithographic structures of the employing of the foundation embodiment of the present invention;
Fig. 4 is the schematic diagram of the Ni/Ge/Au/Ge/Ni/Au metal electrode that the evaporation of the employing of the foundation embodiment of the present invention is formed;
Fig. 5 is the schematic diagram of the contact conductor photolithographic structures of the employing of the foundation embodiment of the present invention;
Fig. 6 is the schematic diagram of the lead-in wire Ti/Au metal that the sputtering of the employing of the foundation embodiment of the present invention is formed;
Fig. 7 is the schematic diagram of the electrochemistry attenuated polishing technological design of the employing of the foundation embodiment of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing provided by the invention, comprises the following steps:
Step 1: InP-base RFIC wafer is cleaned;
In this step, InP-base RFIC wafer is immersed deionized water and carries out ultrasonic cleaning, scavenging period 20 minutes, takes out afterwards and uses hot N
2dry up;
Step 2: at InP-base RFIC crystal column surface coating photoresist;
In this step, first at InP-base RFIC crystal column surface spraying HMDS, toast 10 minutes in 180 DEG C of vacuum drying ovens, apply S9920 photoresist afterwards, thick 3 μm of glue, toast 100 seconds on 100 DEG C of hot plates afterwards, as shown in Figure 2;
Step 3: electrode pattern photoetching is carried out to InP-base RFIC wafer;
In this step, electrode pattern photoetching is carried out to InP-base RFIC wafer, after development, form the electrode pattern of electrochemical polish, as shown in Figure 3;
Step 4: to InP-base RFIC wafer manufacturing metal electrode;
In this step, for the electrode pattern of InP-base RFIC wafer, make metal electrode by electron beam evaporation platform, electrode metal composition is Ni/Ge/Au/Ge/Ni/Au, and its thickness is respectively Ni3nm/Ge3nm/Au45nm/Ge4nm/Ni6nm/Au200nm as shown in Figure 4;
Step 5: InP-base RFIC wafer is cleaned;
In this step, clean InP-base RFIC wafer, adopt ultrasonic 10 minutes of acetone, EtOH Sonicate 10 minutes, ultrasonic 10 minutes of deionized water, finally uses hot N
2dry up;
Step 6: rapid alloying is carried out to InP-base RFIC wafer;
In this step, InP-base RFIC wafer is carried out rapid alloying, N
2atmosphere, alloy temperature 370 ~ 385 DEG C, 30 ~ 50 seconds time;
Step 7: at InP-base RFIC crystal column surface coating photoresist;
In this step, first spray HMDS at InP-base RFIC crystal column surface, toast 10 minutes in 180 DEG C of vacuum drying ovens, apply S9920 photoresist afterwards, thick 4 μm of glue, toast 100 seconds on 100 DEG C of hot plates afterwards;
Step 8: the photoetching of lead-in wire figure is carried out to InP-base RFIC wafer;
In this step, the photoetching of lead-in wire figure is carried out to InP-base RFIC wafer, form the electrode lead pattern of electrochemical polish after development, as shown in Figure 5;
Step 9: to InP-base RFIC wafer manufacturing lead-in wire metal;
In this step, cover sheet, carry out sputtering technology to InP-base RFIC wafer covers, make lead-in wire metal, lead-in wire metal thickness is Ti (50nm), Au (80nm), as shown in Figure 6;
Step 10: InP-base RFIC wafer is connected into wire;
In this step, InP-base RFIC wafer conductive silver paste is sticked on vacuum polytetrafluoroethylene fixture, and wire is connected upper conductive silver paste;
Step 11: electrochemical polish is carried out to InP-base RFIC wafer;
In this step, immersed in electrochemical corrosion groove by InP-base RFIC wafer and carry out electrochemical polish, electrochemical corrosive liquid main component is mo1L
-1naCl aqueous solution 1L, add 200ml Macrogol 200 (PEG200), HCl30ml, adds polyimide particles, particle diameter 500nm, electrolysis tank heating-up temperature 65 ~ 85 DEG C, external dc electric current 6V ~ 8V, adopts magnetic stirrer to stir;
Step 12: InP-base RFIC wafer is peeled off, completes attenuated polishing;
The InP-base RFIC wafer of step 11 is taken out, uses deionized water to rinse, then put into acetone and carry out ultrasonic stripping, the photoresist of removal step 7, separate InP-base RFIC wafer, complete attenuated polishing technique, as shown in Figure 7.
As can be seen from above-described embodiment, method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing provided by the invention, have employed electrochemical principle, from conventional physics is thinning or CMP is different, its advantage effectively avoids the damage that mechanical reduction causes, have employed soft polyimide particles as polishing material, cutting cut can not be formed, magnetic is coordinated to stir the liquid motion of formation, electrochemistry liquid is coordinated to carry out attenuated polishing, above had superiority result is that of obtaining smooth crystal column surface, well achieve the Stress Release in attenuated polishing process, achieve the mirror effect of substrate burnishing surface, for the attenuated polishing process difficulties solving InP ultrathin provides new solution.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (12)
1. InP-base RFIC wafer is carried out to a method for electrochemistry attenuated polishing, it is characterized in that, comprising:
Step 1: InP-base RFIC wafer is cleaned;
Step 2: at InP-base RFIC crystal column surface coating photoresist;
Step 3: electrode pattern photoetching is carried out to InP-base RFIC wafer;
Step 4: to InP-base RFIC wafer manufacturing metal electrode;
Step 5: InP-base RFIC wafer is cleaned;
Step 6: rapid alloying is carried out to InP-base RFIC wafer;
Step 7: at InP-base RFIC crystal column surface coating photoresist;
Step 8: the photoetching of lead-in wire figure is carried out to InP-base RFIC wafer;
Step 9: to InP-base RFIC wafer manufacturing lead-in wire metal;
Step 10: InP-base RFIC wafer is connected into wire;
Step 11: electrochemical polish is carried out to InP-base RFIC wafer;
Step 12: InP-base RFIC wafer is peeled off, completes attenuated polishing;
Wherein, described in step 11, electrochemical polish is carried out to InP-base RFIC wafer, comprising: immersed in electrochemical corrosion groove by InP-base RFIC wafer and carry out electrochemical polish, electrochemical corrosive liquid main component is molL
-1naCl aqueous solution 1L, add 200ml Macrogol 200 (PEG200), HCl30ml, adds polyimide particles, particle diameter 500nm, electrolysis tank heating-up temperature 65 ~ 85 DEG C, external dc electric current 6V ~ 8V, adopts magnetic stirrer to stir.
2. method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to claim 1, is characterized in that, cleans, comprising described in step 1 to InP-base RFIC wafer:
InP-base RFIC wafer is immersed deionized water and carries out ultrasonic cleaning, scavenging period 20 minutes, takes out afterwards and uses hot N
2dry up.
3. method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to claim 1, is characterized in that, at InP-base RFIC crystal column surface coating photoresist described in step 2, comprising:
First at InP-base RFIC crystal column surface spraying HMDS, toast 10 minutes in 180 DEG C of vacuum drying ovens, apply S9920 photoresist afterwards, thick 3 μm of glue, toast 100 seconds on 100 DEG C of hot plates afterwards.
4. method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to claim 1, is characterized in that, carries out electrode pattern photoetching, comprising described in step 3 to InP-base RFIC wafer:
Electrode pattern photoetching is carried out to InP-base RFIC wafer, after development, forms the electrode pattern of electrochemical polish.
5. method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to claim 1, is characterized in that, to InP-base RFIC wafer manufacturing metal electrode described in step 4, comprising:
For the electrode pattern of InP-base RFIC wafer, make metal electrode by electron beam evaporation platform, electrode metal composition is Ni/Ge/Au/Ge/Ni/Au, and its thickness is respectively Ni3nm/Ge3nm/Au45nm/Ge4nm/Ni6nm/Au200nm.
6. method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to claim 1, is characterized in that, cleans, comprising described in step 5 to InP-base RFIC wafer:
Clean InP-base RFIC wafer, adopt ultrasonic 10 minutes of acetone, EtOH Sonicate 10 minutes, ultrasonic 10 minutes of deionized water, finally uses hot N
2dry up.
7. method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to claim 1, is characterized in that, carries out rapid alloying, comprising described in step 6 to InP-base RFIC wafer:
InP-base RFIC wafer is carried out rapid alloying, N
2atmosphere, alloy temperature 370 ~ 385 DEG C, 30 ~ 50 seconds time.
8. method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to claim 1, is characterized in that, at InP-base RFIC crystal column surface coating photoresist described in step 7, comprising:
First spray HMDS at InP-base RFIC crystal column surface, toast 10 minutes in 180 DEG C of vacuum drying ovens, apply S9920 photoresist afterwards, thick 4 μm of glue, toast 100 seconds on 100 DEG C of hot plates afterwards.
9. method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to claim 1, is characterized in that, carries out the photoetching of lead-in wire figure, comprising described in step 8 to InP-base RFIC wafer:
The photoetching of lead-in wire figure is carried out to InP-base RFIC wafer, after development, forms the electrode lead pattern of electrochemical polish.
10. method of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to claim 1, is characterized in that, to InP-base RFIC wafer manufacturing lead-in wire metal described in step 9, comprising:
Cover sheet to InP-base RFIC wafer covers, carry out sputtering technology, make lead-in wire metal, lead-in wire metal thickness is Ti50nm, Au80nm.
11. methods of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 10, InP-base RFIC wafer is connected into wire, comprising:
InP-base RFIC wafer conductive silver paste is sticked on vacuum polytetrafluoroethylene fixture, and wire is connected upper conductive silver paste.
12. methods of InP-base RFIC wafer being carried out to electrochemistry attenuated polishing according to claim 1, is characterized in that, peel off, complete attenuated polishing, comprising described in step 12 to InP-base RFIC wafer:
The InP-base RFIC wafer of step 11 is taken out, uses deionized water to rinse, then put into acetone and carry out ultrasonic stripping, the photoresist of removal step 7, separate InP-base RFIC wafer, complete attenuated polishing technique.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4389291A (en) * | 1981-06-19 | 1983-06-21 | Bell Telephone Laboratories, Incorporated | Photoelectrochemical processing of InP-type devices |
| US5824206A (en) * | 1996-06-28 | 1998-10-20 | The United States Of America As Represented By The Secretary Of The Air Force | Photoelectrochemical etching of p-InP |
| CN1713357A (en) * | 2004-06-21 | 2005-12-28 | 中国科学院半导体研究所 | Chemical battery with porous indium phosphide, electrochemical corrosive system and method |
| CN1986912A (en) * | 2006-12-07 | 2007-06-27 | 上海交通大学 | Process of preparing monocrystalline InP with nano square pore array |
| CN101017779A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Method for forming through hole on InP substrate and semiconductor photoelectric device |
-
2013
- 2013-10-11 CN CN201310473279.0A patent/CN103500707B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4389291A (en) * | 1981-06-19 | 1983-06-21 | Bell Telephone Laboratories, Incorporated | Photoelectrochemical processing of InP-type devices |
| US5824206A (en) * | 1996-06-28 | 1998-10-20 | The United States Of America As Represented By The Secretary Of The Air Force | Photoelectrochemical etching of p-InP |
| CN1713357A (en) * | 2004-06-21 | 2005-12-28 | 中国科学院半导体研究所 | Chemical battery with porous indium phosphide, electrochemical corrosive system and method |
| CN101017779A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Method for forming through hole on InP substrate and semiconductor photoelectric device |
| CN1986912A (en) * | 2006-12-07 | 2007-06-27 | 上海交通大学 | Process of preparing monocrystalline InP with nano square pore array |
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