CN107369554A - A kind of manufacture method of capacitor - Google Patents
A kind of manufacture method of capacitor Download PDFInfo
- Publication number
- CN107369554A CN107369554A CN201710760125.8A CN201710760125A CN107369554A CN 107369554 A CN107369554 A CN 107369554A CN 201710760125 A CN201710760125 A CN 201710760125A CN 107369554 A CN107369554 A CN 107369554A
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- China
- Prior art keywords
- dielectric substrate
- ceramic dielectric
- ceramic
- cutting
- capacitor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/306—Stacked capacitors made by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
Abstract
The invention discloses a kind of manufacture method of capacitor, ceramic dielectric substrate is cleaned, then dried；The upper and lower surface sputtering layer of metal layer of ceramic dielectric substrate after cleaning；Using photolithography method, gluing, front baking, development and post bake are carried out, pattern is produced on ceramic dielectric substrate after metallization；It will be electroplated, corroded and be rinsed with figuratum ceramic dielectric substrate so that the upper and lower surface of ceramic dielectric substrate forms multiple shape identical Gold plated Layers；So as to obtain treating cutting-up ceramic condenser substrate；Treat after cutting-up ceramic condenser substrate cleaned, one layer of nickel is electroplated in the Gold plated Layer of the lower surface of ceramic dielectric substrate, the surface of the nickel plating of ceramic dielectric substrate is adhered on glass plate；After adhesive all solidstate, cutting-up operation is carried out to ceramic dielectric substrate using scribing machine；Cutting-up can finally form final monolithic ceramic capacitor after terminating.The present invention effectively improves the capacity of capacitor, cutting-up yield rate and score quality.
Description
Technical field
The present invention relates to electronic component manufacturing technology field, particularly a kind of manufacture method of capacitor.
Background technology
Ceramic capacitor can be divided into single-layer ceramic capacitor, chip multilayer ceramic capacitor and lead type multi-layer ceramics electricity
Container, because multilayer ceramic capacitor has a low ESR, high pressure resistant, high temperature, small volume, the features such as capacitance swing is wide, in cost
With suitable advantage is all occupied in performance, downstream application is relatively broad, and its market scale accounts for the 93% of whole ceramic capacitor.In
The state consumption electronic products production base main as the whole world, it has also become global ceramic capacitor big producer and consumption are big
State, volume of production and marketing occupy global forefront.From the point of view of the market demand of ceramic capacitor product, it is mainly used in space flight, aviation, ship
The military project class product such as warship, weapons, electronic countermeasure, system communication equipment, industrial control equipment, medical treatment electronic equipment, automotive electronics,
The industrial class product such as precision instrument instrument, oil exploration equipment, track traffic and notebook computer, digital camera, mobile phone, recording
The consumer products such as video recording equipment.
Enter time 100nm epoch with the critical dimension of semiconductor devices, for traditional one-transistor one-capacitor knot
Structure, the electric capacity and reliability of capacitor play more and more important effect.The way of increase condenser capacitance generally has two, and one
Individual is to increase the relative area on capacitor between bottom crown, and another is to reduce the distance between bottom crown on capacitor.At present
It is more in semiconductor fabrication process that electric capacity is increased using the method for increasing the relative area on capacitor between bottom crown.Electric capacity
Utensil has the ability of storage energy, therefore is widely used in electronic product.According to different dielectric materials, capacitor can divide
For liquid capacitor and solid-state capacitor, the dielectric material of solid capacitor is generally electroconductive polymer, and liquid capacitor
Dielectric material is generally electrolyte.Liquid capacitor under long-term use, electrolyte in capacitor can because temperature overheating and
Cause to expand, the problem of easily causing condenser breakdown and produce leakage, or even occur to make because temperature exceedes electrolyte boiling point
Into the dangerous phenomenon of blast.Capacitor is formed by pressing from both sides one layer of insulation dielectric between two blocks of metal electrodes.When in two metals electricity
When interpolar adds voltage, electric charge will be stored on electrode, so capacitor is energy-storage travelling wave tube.Current capacitor dielectric is mostly
The ceramics such as zinc oxide, mica, glass, plastics, metal oxide.Such condenser dielectric pressure voltage is not high, loss is big, has influence on
The security used.
Single-layer ceramic capacitor has small volume, firm in structure, frequency characteristic is excellent, electric property is stable and reliability is high
The advantages that, it is widely used in various microwave communication circuits.The processing of single-layer ceramic capacitor typically will be through over cleaning, sputtering, electricity
Several processes, the cutting-up such as plating and cutting-up are the later process of single-layer ceramic capacitor fabrication, are by drawing by monoblock capacity substrate
Cutting process is divided into the technical process of single capacitor cell.For small size ceramic capacitor, blade draws in cutting-up process
The risk of bursting apart and come off risen can be bigger, once occurring bursting apart and coming off, will scrap whole electric capacity base version circuit, cause to process
The failure of process.Hidden split of substrate will have a strong impact on the stability and reliability of single-layer ceramic capacitor, and product quality will be brought
It is the another difficult point of single-layer ceramic capacitor cutting-up that very big hidden danger electric capacity, which comes off,.Single-layer ceramic capacitor needs during cutting-up
Bear the vibration of cutting knife and the impact of cutting-up cooling water.Because single-layer ceramic electric capacity cutting-up size is small, bond area is small, to viscous
Connect firmness requirement height.If bonding loosely will directly cause electric capacity cutting-up to come off, cutting-up waste product is caused.Therefore made pottery for individual layer
Porcelain condenser electric capacity during cutting-up is processed comes off, control of bursting apart is the difficult point of processing and fabricating.
The content of the invention
The technical problems to be solved by the invention are overcome the deficiencies in the prior art and provide a kind of manufacturer of capacitor
Method, the present invention effectively improve the capacity of capacitor, improve the microwave property of single-layer ceramic electric capacity, improve single-layer ceramic electric capacity
The cutting-up yield rate and score quality of device.
The present invention uses following technical scheme to solve above-mentioned technical problem：
According to a kind of manufacture method of capacitor proposed by the present invention, comprise the following steps：
Step 1: providing ceramic dielectric substrate, the cleaning of water-filling ultrasonic wave is entered to ceramic dielectric substrate and organic solvent ultrasonic wave is clear
Wash, then dry；
Step 2: using the method for vacuum sputtering, the upper and lower surface sputtering layer of metal layer of ceramic dielectric substrate after cleaning；
Step 3: using photolithography method, gluing, front baking, development and post bake are carried out, is made on ceramic dielectric substrate after metallization
Make pattern；
Step 4: it will be electroplated, corroded and be rinsed with figuratum ceramic dielectric substrate so that above and below ceramic dielectric substrate
Surface forms multiple shape identical Gold plated Layers；So as to obtain treating cutting-up ceramic condenser substrate；
Step 5: treat after cutting-up ceramic condenser substrate cleaned, it is electric in the Gold plated Layer of the lower surface of ceramic dielectric substrate
One layer of nickel is plated, the surface of the nickel plating of ceramic dielectric substrate is adhered on glass plate；
Step 6: after adhesive all solidstate, cutting-up operation is carried out to ceramic dielectric substrate using scribing machine；
Monolithic ceramic electric capacity is dipped into nickel etchant solution by cutting-up after terminating, and the Ni layers of etching away plating, at this moment cutting-up is good
Single-layer ceramic electric capacity will be separated with adhesive, form final monolithic ceramic capacitor.
As a kind of further prioritization scheme of the manufacture method of capacitor of the present invention, the surface of ceramic dielectric substrate
To be smooth.
As a kind of further prioritization scheme of the manufacture method of capacitor of the present invention, the dielectric of ceramic dielectric substrate
Constant is 30-23000.
As a kind of further prioritization scheme of the manufacture method of capacitor of the present invention, the thickness of ceramic dielectric substrate
For 0.2mm.
It is using ultrasound as a kind of further prioritization scheme of the manufacture method of capacitor of the present invention, in step 1
Ripple cleaning machine enters the cleaning of water-filling ultrasonic wave and the cleaning of organic solvent ultrasonic wave to ceramic dielectric substrate.
The present invention compared with prior art, has following technique effect using above technical scheme：
（1）The present invention effectively improves the capacity of capacitor, and can reduce the volume of capacitor, convenient use, can also effectively carry
High withstand voltage value and dielectric constant, reduce dielectric loss, reduce the thickness of single-layer ceramic capacitor dielectric layer, improve single-layer ceramic
The microwave property of electric capacity；This method is adapted to mass produce low-loss high-performance microwave single-layer ceramic capacitor, has good
Popularizing value；
（2）The present invention improves the cutting-up yield rate and score quality of single-layer ceramic capacitor, reduces single-layer ceramic capacitor
Production and processing cost；
（3）The present invention effectively avoids single-layer ceramic electric capacity cutting-up from bursting apart and layer gold warpage issues, improves single-layer ceramic capacitor and draws
Cut quality；The method is simple to operate easy-to-use, and cost is low, has good value for applications.
Embodiment
Technical scheme is described in further detail below：
A kind of manufacture method of capacitor, comprises the following steps：
Step 1: providing ceramic dielectric substrate, the cleaning of water-filling ultrasonic wave is entered to ceramic dielectric substrate and organic solvent ultrasonic wave is clear
Wash, then dry；
Step 2: using the method for vacuum sputtering, the upper and lower surface sputtering layer of metal layer of ceramic dielectric substrate after cleaning；
Step 3: using photolithography method, gluing, front baking, development and post bake are carried out, is made on ceramic dielectric substrate after metallization
Make pattern；
Step 4: it will be electroplated, corroded and be rinsed with figuratum ceramic dielectric substrate so that above and below ceramic dielectric substrate
Surface forms multiple shape identical Gold plated Layers；So as to obtain treating cutting-up ceramic condenser substrate；
Step 5: treat after cutting-up ceramic condenser substrate cleaned, it is electric in the Gold plated Layer of the lower surface of ceramic dielectric substrate
One layer of nickel is plated, the surface of the nickel plating of ceramic dielectric substrate is adhered on glass plate；
Step 6: after adhesive all solidstate, cutting-up operation is carried out to ceramic dielectric substrate using scribing machine；
Monolithic ceramic electric capacity is dipped into nickel etchant solution by cutting-up after terminating, and the Ni layers of etching away plating, at this moment cutting-up is good
Single-layer ceramic electric capacity will be separated with adhesive, form final monolithic ceramic capacitor.
The surface of ceramic dielectric substrate is smooth.The dielectric constant of ceramic dielectric substrate is 30-23000.Ceramic dielectric
The thickness of substrate is 0.2mm.Be in step 1 using supersonic wave cleaning machine ceramic dielectric substrate is entered water-filling ultrasonic wave cleaning and
Organic solvent ultrasonic wave cleans.
The present invention effectively improves the capacity of capacitor, and can reduce the volume of capacitor, convenient use, can also effectively carry
High withstand voltage value and dielectric constant, reduce dielectric loss, reduce the thickness of single-layer ceramic capacitor dielectric layer, improve single-layer ceramic
The microwave property of electric capacity；This method is adapted to mass produce low-loss high-performance microwave single-layer ceramic capacitor, has good
Popularizing value；The present invention improves the cutting-up yield rate and score quality of single-layer ceramic capacitor, reduces single-layer ceramic
The production and processing cost of capacitor；The present invention effectively avoids single-layer ceramic electric capacity cutting-up from bursting apart and layer gold warpage issues, improves single
Layer ceramic capacitor cutting-up quality；The method is simple to operate easy-to-use, and cost is low, has good value for applications.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to is assert
The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of not departing from present inventive concept, some simple deductions can also be made or substituted, should all be considered as belonging to the present invention's
Protection domain.
Claims (5)
1. a kind of manufacture method of capacitor, it is characterised in that comprise the following steps：
Step 1: providing ceramic dielectric substrate, the cleaning of water-filling ultrasonic wave is entered to ceramic dielectric substrate and organic solvent ultrasonic wave is clear
Wash, then dry；
Step 2: using the method for vacuum sputtering, the upper and lower surface sputtering layer of metal layer of ceramic dielectric substrate after cleaning；
Step 3: using photolithography method, gluing, front baking, development and post bake are carried out, is made on ceramic dielectric substrate after metallization
Make pattern；
Step 4: it will be electroplated, corroded and be rinsed with figuratum ceramic dielectric substrate so that above and below ceramic dielectric substrate
Surface forms multiple shape identical Gold plated Layers；So as to obtain treating cutting-up ceramic condenser substrate；
Step 5: treat after cutting-up ceramic condenser substrate cleaned, it is electric in the Gold plated Layer of the lower surface of ceramic dielectric substrate
One layer of nickel is plated, the surface of the nickel plating of ceramic dielectric substrate is adhered on glass plate；
Step 6: after adhesive all solidstate, cutting-up operation is carried out to ceramic dielectric substrate using scribing machine；
Monolithic ceramic electric capacity is dipped into nickel etchant solution by cutting-up after terminating, and the Ni layers of etching away plating, at this moment cutting-up is good
Single-layer ceramic electric capacity will be separated with adhesive, form final monolithic ceramic capacitor.
2. the manufacture method of a kind of capacitor according to claim 1, it is characterised in that the surface of ceramic dielectric substrate is
Smooth.
3. the manufacture method of a kind of capacitor according to claim 1, it is characterised in that the dielectric of ceramic dielectric substrate is normal
Number is 30-23000.
4. the manufacture method of a kind of capacitor according to claim 1, it is characterised in that the thickness of ceramic dielectric substrate is
0.2mm。
5. the manufacture method of a kind of capacitor according to claim 1, it is characterised in that be to use ultrasonic wave in step 1
Cleaning machine enters the cleaning of water-filling ultrasonic wave and the cleaning of organic solvent ultrasonic wave to ceramic dielectric substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710760125.8A CN107369554A (en) | 2017-08-30 | 2017-08-30 | A kind of manufacture method of capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710760125.8A CN107369554A (en) | 2017-08-30 | 2017-08-30 | A kind of manufacture method of capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107369554A true CN107369554A (en) | 2017-11-21 |
Family
ID=60311162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710760125.8A Pending CN107369554A (en) | 2017-08-30 | 2017-08-30 | A kind of manufacture method of capacitor |
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| Country | Link |
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| CN (1) | CN107369554A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109637809A (en) * | 2018-12-21 | 2019-04-16 | 广州天极电子科技有限公司 | A kind of ceramics energy-storage capacitor and preparation method thereof |
| CN112259377A (en) * | 2020-09-16 | 2021-01-22 | 大连达利凯普科技股份公司 | Process for solving burr problem after single-layer ceramic capacitor scribing |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102568821A (en) * | 2012-02-16 | 2012-07-11 | 江苏大学 | High-voltage ceramic capacitor dielectric with high dielectric constant |
| CN103346094A (en) * | 2013-06-21 | 2013-10-09 | 中国电子科技集团公司第四十一研究所 | Etching method of microwave membrane circuit |
| CN103402313A (en) * | 2013-07-10 | 2013-11-20 | 中国电子科技集团公司第四十一研究所 | Thin film microcircuit cutting method based on sacrificial layer |
| US8997321B2 (en) * | 2009-03-26 | 2015-04-07 | Tdk Corporation | Method of manufacturing a thin film capacitor having separated dielectric films |
-
2017
- 2017-08-30 CN CN201710760125.8A patent/CN107369554A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8997321B2 (en) * | 2009-03-26 | 2015-04-07 | Tdk Corporation | Method of manufacturing a thin film capacitor having separated dielectric films |
| CN102568821A (en) * | 2012-02-16 | 2012-07-11 | 江苏大学 | High-voltage ceramic capacitor dielectric with high dielectric constant |
| CN103346094A (en) * | 2013-06-21 | 2013-10-09 | 中国电子科技集团公司第四十一研究所 | Etching method of microwave membrane circuit |
| CN103402313A (en) * | 2013-07-10 | 2013-11-20 | 中国电子科技集团公司第四十一研究所 | Thin film microcircuit cutting method based on sacrificial layer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109637809A (en) * | 2018-12-21 | 2019-04-16 | 广州天极电子科技有限公司 | A kind of ceramics energy-storage capacitor and preparation method thereof |
| CN112259377A (en) * | 2020-09-16 | 2021-01-22 | 大连达利凯普科技股份公司 | Process for solving burr problem after single-layer ceramic capacitor scribing |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171121 |
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