CN220651833U - Chip capacitor with prefabricated gold germanium layer - Google Patents
Chip capacitor with prefabricated gold germanium layer Download PDFInfo
- Publication number
- CN220651833U CN220651833U CN202322149478.8U CN202322149478U CN220651833U CN 220651833 U CN220651833 U CN 220651833U CN 202322149478 U CN202322149478 U CN 202322149478U CN 220651833 U CN220651833 U CN 220651833U
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- CN
- China
- Prior art keywords
- layer
- gold
- electrode layer
- chip capacitor
- germanium layer
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- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000003990 capacitor Substances 0.000 title claims abstract description 38
- 239000010410 layer Substances 0.000 claims description 113
- 239000011241 protective layer Substances 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 229910052737 gold Inorganic materials 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000003466 welding Methods 0.000 description 8
- 238000009434 installation Methods 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 5
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Abstract
The utility model relates to the technical field of chip capacitors, in particular to a chip capacitor with a prefabricated gold-germanium layer, which comprises a dielectric layer and also comprises a mounting assembly, wherein the mounting assembly comprises an upper electrode layer, a lower electrode layer and a gold-germanium layer, the upper electrode layer is connected with the dielectric layer, the lower electrode layer is connected with the dielectric layer, the gold-germanium layer is connected with the lower electrode layer, and a product mounting surface can be melted and welded in a circuit board only by heating the gold-germanium layer through the prefabricated gold-germanium bonding pad of the chip capacitor, so that the mounting efficiency is improved.
Description
Technical Field
The utility model relates to the technical field of chip capacitors, in particular to a chip capacitor with a prefabricated gold germanium layer.
Background
The chip capacitor has the advantages of small volume, stable electrical performance, high reliability, small influence of electrical parameters along with environmental change, excellent performance at high frequency and the like, is applied to the functions of blocking, bypassing, coupling, tuning, impedance matching, coplanar waveguide and the like in a Microwave Integrated Circuit (MIC), and is welded by gold-tin alloy in the prior art, but has low melting point after welding, and is not suitable for complex welding operation.
The existing capacitor adopts special welding materials, so that the melting point after welding is high, and the capacitor is further suitable for complex welding operation.
However, the traditional welding mode has complex operation flow and needs a plurality of steps to be sequentially carried out, so that the operation and installation time is long and the installation efficiency is low.
Disclosure of Invention
The utility model aims to provide a chip capacitor with a prefabricated gold-germanium layer, wherein the traditional welding mode has complex operation flow and needs a plurality of steps to be sequentially carried out, so that the operation and installation time is long, and the installation efficiency is low.
In order to achieve the above object, the present utility model provides a chip capacitor with a prefabricated gold germanium layer, comprising a dielectric layer,
also comprises a mounting assembly which is used for mounting the mounting assembly,
the mounting assembly comprises an upper electrode layer, a lower electrode layer and a gold germanium layer, wherein the upper electrode layer is connected with the dielectric layer and is positioned on one side of the dielectric layer, the lower electrode layer is connected with the dielectric layer and is positioned on the dielectric layer away from the upper electrode layer, and the gold germanium layer is connected with the lower electrode layer and is positioned on one side of the lower electrode layer.
Wherein the gold germanium layer is made of Au88Gel2, the density is 17.5g/cm < 3 >, and the melting point is 356 ℃; the thickness of the gold germanium layer is 5-12 mu m.
The lower electrode layer is provided with a capacitance alignment hole, and the capacitance alignment hole is positioned at one side of the lower electrode layer.
The chip capacitor of the prefabricated gold germanium layer further comprises a protection layer, wherein the protection layer is connected with the upper electrode layer and is located on one side of the upper electrode layer.
The chip capacitor of the prefabricated gold germanium layer further comprises an insulating layer, wherein the insulating layer is connected with the protective layer and is located at one side, far away from the upper electrode layer, of the protective layer.
According to the chip capacitor with the prefabricated gold-germanium layer, the prefabricated gold-germanium bonding pad is used for the chip capacitor, and the mounting surface of a product can be melted only by heating the gold-germanium layer so as to be welded in a circuit board, so that the capacitor can be rapidly mounted on the mounting surface, and the mounting efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
Fig. 1 is a schematic structural diagram of a chip capacitor with a pre-gold germanium layer according to a first embodiment of the present utility model.
Fig. 2 is a schematic structural view of a mounting assembly according to a first embodiment of the present utility model.
Fig. 3 is a schematic structural diagram of a chip capacitor with a germanium layer of a second embodiment of the present utility model.
In the figure: 101-dielectric layer, 102-mounting assembly, 103-upper electrode layer, 104-lower electrode layer, 105-gold germanium layer, 106-capacitance alignment hole, 201-protective layer, 202-insulating layer.
Detailed Description
The following detailed description of embodiments of the utility model, examples of which are illustrated in the accompanying drawings and, by way of example, are intended to be illustrative, and not to be construed as limiting, of the utility model.
The first embodiment of the present application is:
referring to fig. 1 and 2, fig. 1 is a schematic structural diagram of a chip capacitor with a germanium layer in a first embodiment of the present utility model. Fig. 2 is a schematic structural view of a mounting assembly according to a first embodiment of the present utility model.
The utility model provides a chip capacitor with a prefabricated gold germanium layer, which comprises a dielectric layer 101 and a mounting assembly 102, wherein the mounting assembly 102 comprises an upper electrode layer 103, a lower electrode layer 104 and a gold germanium layer 105, and the lower electrode layer 104 is provided with a capacitor alignment hole 106. The scheme solves the problems that the traditional welding mode has complex operation flow and needs a plurality of steps to be sequentially carried out, so that the operation and installation time is long, the installation efficiency is low, and the scheme can be used under the condition that the installation efficiency of a capacitor needs to be improved.
In this embodiment, the dielectric layer 101 is a main capacitor component material, and the dielectric layer 101 material may be a ceramic dielectric or single crystal Si.
The upper electrode layer 103 is connected above the dielectric layer 101 through magnetron sputtering or electroplating, the lower electrode layer 104 is connected below the dielectric layer 101 through magnetron sputtering or electroplating, the electrode layer material can be single-layer metal or multi-layer metal, and the single-layer metal material can be gold, silver, copper, nickel and tin; the multi-layer metal can be nickel-chromium/gold, nickel/gold, copper/nickel/gold, titanium-tungsten/gold, titanium/platinum/gold, titanium/titanium-tungsten/gold, titanium-tungsten/platinum/gold, titanium-tungsten/nickel/gold/, titanium/copper/gold, silver/nickel/gold, titanium nitride/titanium-tungsten/gold, the gold-germanium layer 105 is connected to the lower electrode layer 104 through magnetron sputtering, electroplating or evaporation coating, the gold-germanium layer 105 is made of Au88Gel2, the density is 17.5g/cm3, the melting point is 356 ℃, the thickness of the gold-germanium layer 105 is 5-12 mu m, and therefore the chip capacitor is prefabricated, the product mounting surface can be melted and welded in the circuit board only by heating the gold-germanium layer 105, the capacitor can be quickly mounted on the mounting surface, and the mounting efficiency is improved.
Finally, the capacitance alignment hole 106 is located at one side of the lower electrode layer 104, and the lower electrode layer 104 has the capacitance alignment hole 106, so that the difference of capacitance values of the upper electrode layer 103 and the lower electrode layer 104 caused by position offset can be reduced through the capacitance alignment hole 106, the influence of the position offset of the two electrode plates on the capacitance values is reduced, and the normal use of the capacitance is ensured.
When the chip capacitor with the prefabricated gold-germanium layer is used, the product mounting surface can be melted and welded in the circuit board only by heating the gold-germanium layer 105 through the prefabricated gold-germanium bonding pad of the chip capacitor, so that the capacitor can be quickly mounted on the mounting surface, and the mounting efficiency is improved.
The second embodiment of the present application is:
referring to fig. 3 on the basis of the first embodiment, fig. 3 is a schematic structural diagram of a chip capacitor with a germanium layer in a second embodiment
The utility model provides a chip capacitor with a prefabricated gold germanium layer, which further comprises a protective layer 201 and an insulating layer 202.
The protective layer 201 is connected to the upper electrode layer 103 and is located on one side of the upper electrode layer 103, the protective layer 201 is connected to the upper electrode layer 103 by printing and coating, the protective layer 201 is made of epoxy resin, and abrasion of the upper electrode layer 103 can be reduced by the protective layer 201.
The insulating layer 202 is connected with the protective layer 201 and is located at one side of the protective layer 201 away from the upper electrode layer 103, the insulating layer 202 is connected to the protective layer 201 by printing and coating, the insulating layer 202 is made of acrylic acid oligomer, when the upper electrode and the lower electrode are connected through the insulating layer 202, the gold germanium layer 105 is melted, and short circuit between the upper electrode and the lower electrode can be effectively prevented through blocking of the insulating layer 202.
The foregoing disclosure is only illustrative of one or more preferred embodiments of the present application and is not intended to limit the scope of the claims hereof, as it is to be understood by those skilled in the art that all or part of the process of implementing the described embodiment may be practiced otherwise than as specifically described and illustrated by the appended claims.
Claims (5)
1. A chip capacitor with a prefabricated gold germanium layer comprises a dielectric layer, and is characterized in that,
also comprises a mounting assembly which is used for mounting the mounting assembly,
the mounting assembly comprises an upper electrode layer, a lower electrode layer and a gold germanium layer, wherein the upper electrode layer is connected with the dielectric layer and is positioned on one side of the dielectric layer, the lower electrode layer is connected with the dielectric layer and is positioned on the dielectric layer away from the upper electrode layer, and the gold germanium layer is connected with the lower electrode layer and is positioned on one side of the lower electrode layer.
2. The chip capacitor of the pre-gold germanium layer of claim 1,
the gold germanium layer is made of Au88Gel2, the density is 17.5g/cm < 3 >, and the melting point is 356 ℃; the thickness of the gold germanium layer is 5-12 mu m.
3. The chip capacitor of the pre-gold germanium layer of claim 1,
the lower electrode layer is provided with a capacitance alignment hole, and the capacitance alignment hole is positioned at one side of the lower electrode layer.
4. The chip capacitor of the pre-gold germanium layer of claim 1,
the chip capacitor of the prefabricated gold germanium layer further comprises a protection layer, wherein the protection layer is connected with the upper electrode layer and is located on one side of the upper electrode layer.
5. The chip capacitor of the pre-gold germanium layer of claim 4,
the chip capacitor of the prefabricated gold germanium layer further comprises an insulating layer, wherein the insulating layer is connected with the protective layer and is positioned on one side, away from the upper electrode layer, of the protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322149478.8U CN220651833U (en) | 2023-08-10 | 2023-08-10 | Chip capacitor with prefabricated gold germanium layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322149478.8U CN220651833U (en) | 2023-08-10 | 2023-08-10 | Chip capacitor with prefabricated gold germanium layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220651833U true CN220651833U (en) | 2024-03-22 |
Family
ID=90286050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322149478.8U Active CN220651833U (en) | 2023-08-10 | 2023-08-10 | Chip capacitor with prefabricated gold germanium layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220651833U (en) |
-
2023
- 2023-08-10 CN CN202322149478.8U patent/CN220651833U/en active Active
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| GR01 | Patent grant |