CN201387775Y - High frequency power SMD resistor - Google Patents
High frequency power SMD resistor Download PDFInfo
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- CN201387775Y CN201387775Y CN200920151207U CN200920151207U CN201387775Y CN 201387775 Y CN201387775 Y CN 201387775Y CN 200920151207 U CN200920151207 U CN 200920151207U CN 200920151207 U CN200920151207 U CN 200920151207U CN 201387775 Y CN201387775 Y CN 201387775Y
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Abstract
The utility model relates to a fixed resistor, particularly to a power SMD (surface mounted device) resistor used for a high frequency microwave communication circuit component. The power SMD resistor comprises a substrate, a resistor, a face electrode, a back electrode, a lateral conductive electrode and an outer protective layer, wherein the back electrode is arranged on the lower surface of the substrate, the lateral conductive electrode is arranged on the side end face of the substrate and electrically connected with the back electrode, the resistor is positioned on the upper surface of the substrate and is in bridge connection between the face electrode on the upper surface of the substrate and the lateral conductive electrode, the outer protective layer covers the upper surface of the resistor, the face electrode presents the shape of an I, and one side end face of the I-shaped structure is connected with the resistor and covered by the outer protective layer while the other side end face thereof is exposed out of the outer protective layer. A product acquired via the structure has steadier high-frequency characteristics and more reliable quality.
Description
Technical field
The utility model relates to a kind of fixed resistor, more particularly, relates to a kind of microwave high-frequency telecommunication circuit assembly power patch resistor.
Background technology
In recent years, along with the continuous development leap of SMT technology, the fast development of mobile communication and basic telecommunication industry GSM, 2.5G, 3G and even 4G business has brought the another upgrading of taking turns on the product technology in addition.In the prior art, the microwave communication alternating-current resistance is normally with axial or radial TFT plug-in unit resistance form exists, and the electric resistance structure of this kind packing forms all can't satisfy the need of the production of present stage industrial mass on performance, price and efficiency of assembling.
The industry practice of electronic devices and components proved already that SMT (Surface MountTechnology surface mounting technology) was a Developing Trend in Technology.In recent years, passive device particularly capacitance-resistance base components Surface Mounting Technology become the main flow of industry.The Resistor-Capacitor Unit Surface Mounting Technology has brought very big lifting and the change on product quality, cost and the efficient, very helps the scale mass industrialized production.On the other hand, the design of components and parts Surface Mounting Technology has promoted further developing of SMT conversely again, and both complement each other.Passive Resistor-Capacitor Unit Developing Trend in Technology shows, conventional axial or radial TFT plug-in unit Resistor-Capacitor Unit be because the inferior position on the performance, cost, efficient has become setting sun technology at present, and progressively substituted by novel Surface Mount components and parts institute.In this field, high frequency TFT package metals film fixed resistor is as the same.
Present existing paster type resistor is in the medium and low frequency electromagnetic environment, performance is quite stable, therefore be widely used in the medium and low frequency electromagnetic environment, yet in high frequency environment, such as MHz, GHz and even higher frequency section, often, cause the microwave output signal of product to be easy to take place distortion phenomenon owing to do not give more considerations in the design, bad etc. as voltage standing wave ratio.In addition, the SMD of existing Chip-R (Surface Mounted Devices surface mount device) encapsulating structure, use two termination carrying welding functions of Chip-R element, because the area of two ends is less relatively, make bonding area limited, in the microwave communication parts, use, be easy to cause product underpower and product weld failure as power termination or impedance resistance.In addition, because existing Chip-R mainly adopts termination carrying welding function, microwave signal is obvious at skin effect and parasitic character that welding end surface produces, and operating characteristic is not good in the microwave high-frequency environment.Especially, use as power termination or impedance under high frequency environment, its mass property is more barely satisfactory, thereby can't promote the use of in enormous quantities.
The utility model content
The utility model has overcome above-mentioned shortcoming, provide a kind of stable performance, with low cost, can be widely used in the high frequency power patch resistor in the microwave high-frequency telecommunication circuit assembly.
The technical scheme in the invention for solving the technical problem is: a kind of high frequency power patch resistor, comprise substrate, resistive element, the face electrode, back electrode and side conductive electrode, described electrode is arranged on the upper surface of described substrate, described back electrode is arranged on the lower surface of described substrate, described side conductive electrode is arranged on the side end face of described substrate, and be electrically connected with described back electrode, described resistive element is positioned at the upper surface of described substrate, and be connected across between described electrode and the side conductive electrode, described electrode is " worker " font structure, and a side end face of described " worker " font structure is connected with described resistive element.
Described back electrode can cover the lower surface of whole substrate.
Described side conductive electrode can comprise one deck conductive layer at least.
Described side conductive electrode can adopt three layers of different materials, is respectively conductive layer, thermal insulation layer or weld layer from the inside to the outside.
Can be coated with external protection at described resistive element upper surface, the side end face that described " worker " font structure is connected with described resistive element is covered by described external protection, and the opposite side end face is exposed to outside the described external protection.
Also can be provided with inner protective layer between the upper surface of described resistive element and the external protection.
Adopt the microwave high-frequency power resistor that technical solutions of the utility model obtained, can reduce skin effect (skin effect) and stray inductance, make that the high frequency characteristics of product is more stable.Therefore the utlity model has characteristics such as high frequency characteristics is good, stable performance, efficiency of assembling height, suitable surface mounting technology, with low cost, suitable industrialized mass.
Description of drawings
Fig. 1 is a contour structures schematic diagram of the present utility model;
Fig. 2 is for removing the structural representation behind the external protection among Fig. 1;
Fig. 3 is the end view of Fig. 1.
Embodiment
As Fig. 1; shown in 2; the utility model comprises substrate 1; resistive element 4; face electrode 3; back electrode 2; side conductive electrode 7; inner protective layer 5 and external protection 6; the described substrate 1 preferred aluminium nitride ceramics that adopts; also can select beryllium oxide or 96-99% aluminium oxide; described electrode 3 adopts the thick film silk screen printing process to be printed on the upper surface of described substrate 1; described back electrode 2 is arranged on the lower surface of described substrate 1; described side conductive electrode 7 is arranged on the side end face of described substrate 1; and be electrically connected with described back electrode 3; described resistive element 4 is positioned at the upper surface of described substrate 1; and be connected across between described electrode 3 and the side conductive electrode 7; described external protection 6 covers described resistive element 4 upper surfaces; because described resistive element 4 is with photo etched mask; sputter or screen printing mode form and repair resistance with laser and repair and cut that the back forms; therefore between the upper surface of described resistive element 4 and external protection 6, be provided with the inner protective layer 5 that adopts high-temperature medium glass material composition; can repair the described resistive element 4 of protection in the process of cutting at laser; prevent that resistive element 4 surfaces from producing the otch crackle, guaranteed the stable of resistance and performance.
Described electrode 1 is " worker " font structure, and a side end face of described " worker " font structure is connected with described resistive element, and is covered by described external protection, and the opposite side end face is exposed to outside the described external protection.Like this, the face electrode pattern by the design of " worker " font structure has reduced skin effect and stray inductance effect that the microwave high-frequency electromagnetic environment is produced, makes that the high frequency characteristics of product is relatively stable.
Described back electrode 2 can adopt thick film silk-screen mode to be printed in substrate back, for obtaining adhesion property preferably, preferably adopts whole application pattern, and promptly back electrode 2 covers the lower surface of whole substrate 1.Owing to adopt substrate back electrode carrying welding function, avoided become the skin capacity effect and the stray inductance problem of microwave signal, under high frequency environment, to use as power termination or impedance, its reliability has obtained assurance.Because back electrode 2 is arranged on the lower surface of described substrate 1, increase soldering reliability, be convenient to simultaneously take complementary cooling measure, thereby avoided existing paster type resistor welding back product weld failure and the bad underpower problem that causes of heat radiation, thereby can use in enormous quantities.
Described side conductive electrode 7 comprises three layers that adopt different materials respectively, is respectively conductive layer 71, thermal insulation layer 72 and weld layer 73 from the inside to the outside.The most inboard conductive layer 71 is formed by thermosetting resin silver slurry, high-temperature electric conduction slurry or sputter, evaporation coating mode, for preventing that may produce side in the process of SMT welding leads termination cracking or fusion, therefore adopt plating mode or sputter mode to form metal levels such as nickel or nickel alloy as thermal insulation layer 72, effectively to prevent the influence of the internal electrode of welding procedure; And adopt tin that plating mode or sputter mode form or other bondable metal layer as weld layer 73, and utilize solderable metal to be easy to characteristic with the wetting welding of welding filler metal, guarantee the soldering reliability and the stability of resistor in the making sheet process.As a kind of simplification of present embodiment, described side conductive electrode 7 also can only adopt one deck, promptly only is made of conductive layer.Especially, when side conductive electrode 7 only is provided with one deck conductive layer, preferably adopt the evaporation coating mode to form.
Described external protection 6 adopts high dielectric constant slurries such as thermosetting resin slurries, and adopts and form by silk screen printing, has protected resistive element 4 and face electrode 3 parts that are connected with resistive element well.
More than high frequency power patch resistor provided by the utility model is described in detail, used specific case herein principle of the present utility model and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present utility model and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present utility model, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as restriction of the present utility model.
Claims (6)
1. high frequency power patch resistor, comprise substrate, resistive element, face electrode, back electrode and side conductive electrode, it is characterized in that: described electrode is arranged on the upper surface of described substrate, described back electrode is arranged on the lower surface of described substrate, described side conductive electrode is arranged on the side end face of described substrate, and be electrically connected with described back electrode, described resistive element is positioned at the upper surface of described substrate, and be connected across between described electrode and the side conductive electrode, described electrode is " worker " font structure, and a side end face of described " worker " font structure is connected with described resistive element.
2. high frequency power patch resistor according to claim 1 is characterized in that: described back electrode covers the lower surface of whole substrate.
3. high frequency power patch resistor according to claim 1 is characterized in that: described side conductive electrode comprises one deck conductive layer at least.
4. high frequency power patch resistor according to claim 3 is characterized in that: described side conductive electrode comprises three layers of different materials, is respectively conductive layer, thermal insulation layer or weld layer from the inside to the outside.
5. according to each described high frequency power patch resistor in the claim 1～4; it is characterized in that: be coated with external protection at described resistive element upper surface; the side end face that described " worker " font structure is connected with described resistive element is covered by described external protection, and the opposite side end face is exposed to outside the described external protection.
6. high frequency power patch resistor according to claim 5 is characterized in that: also be provided with inner protective layer between the upper surface of described resistive element and the external protection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920151207U CN201387775Y (en) | 2009-04-16 | 2009-04-16 | High frequency power SMD resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920151207U CN201387775Y (en) | 2009-04-16 | 2009-04-16 | High frequency power SMD resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201387775Y true CN201387775Y (en) | 2010-01-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200920151207U Expired - Fee Related CN201387775Y (en) | 2009-04-16 | 2009-04-16 | High frequency power SMD resistor |
Country Status (1)
| Country | Link |
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| CN (1) | CN201387775Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
-
2009
- 2009-04-16 CN CN200920151207U patent/CN201387775Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| CN101923928B (en) * | 2010-03-25 | 2012-05-23 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100120 Termination date: 20180416 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |