CN104037115A - Manufacturing method of aluminium nitride-based thin film circuit - Google Patents
Manufacturing method of aluminium nitride-based thin film circuit Download PDFInfo
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
- H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
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Abstract
The invention discloses a manufacturing method of an aluminium nitride-based thin film circuit which has a surface coating structure functional in tin soldering and a characteristic of an irregular shape. The manufacturing method comprises the following steps: step 101, cleaning an aluminium nitride substrate; step 102, setting the aluminium nitride substrate to have metal seed layer thin films on the front and rear surfaces; step 103, using a photo-etching process on the metal seed layer thin film on the front surface to prepare a circuitous pattern having the characteristic of the irregular shape; step 104, processing, by using laser, internal rectangular through holes, or the internal rectangular through holes and a portion with an irregular shape of the aluminium nitride-based thin film circuit; step 105, processing with use of diluted hydrochloric acid; step 106, preparing the surface coating functional in tin soldering; and step 107, cutting, by using a sand-wheel slice cutting machine, the portions with regular shapes of the aluminium nitride-based thin film circuit. The manufacturing method of the aluminium nitride-based thin film circuit disclosed by the invention solves problems of the prior art in low reliability and deterioration of a metallic conductive band coating during a progress of preparing the aluminium nitride-based thin film circuit which has the surface coating structure functional in tin soldering and the characteristic of the irregular shape.
Description
Technical field
The present invention relates to a kind of aluminum-nitride-based thin film circuit manufacture method, specifically provide a kind of high reliability for making the aluminum-nitride-based thin film circuit manufacture method that possesses soldering function surface coating structure and different form feature.
Background technology
Aluminium nitride ceramics is a kind of novel electron ceramic material, high owing to having thermal conductivity, and coefficient of linear expansion is mated with silicon, good mechanical property, and the overall merit such as electrical property is good and nontoxic, is considered to optimal baseplate material.
The aluminum-nitride-based thin film circuit that possesses soldering function surface coating structure and different form feature, extensive use in the HIGH-POWERED MICROWAVES millimeter wave multifunctional modules such as high power amplitude limiter.Why the aluminum-nitride-based thin film circuit of this class adopts direct soldering mode interconnected to the switching interconnection mode of various coaxial adatpters, and reason is that coaxial adatpter inner wire and microstrip transformation structure have the advantages such as discontinuity sudden change is relatively little, impedance transformation is little, it is little to reflect, contact resistance is little.Therefore, soldering interconnection has also had specific (special) requirements to aluminum-nitride-based micro-band thin film circuit film layer structure and firmness, and film layer structure is generally re-plating Ni/Au or Cu/Ni/Au on the metal seed layer of sputter.
So-called different form is characterized as, and must include one to a plurality of non-metallic rectangular through-hole, profile or be rectangle, or for to lack one or more isosceles right triangle on four angles of rectangle.From around, transmission line distance is less than or equal to 30 microns at non-metallic rectangular through-hole edge, and rectangular through-hole is embedded in chip and cavity is bonding, chip bonding pad and spun gold, gold ribbon or the interconnection of golden network bonding for transmission line in rectangular through-hole.Different form processing realizes with laser machine conventionally, yet laser machine is processed aluminum-nitride-based sector-meeting and caused the generation of fine aluminium or the reduction of aluminium nitride dielectric strength.As the < < laser drilling that the people such as Ren Li delivered on < < superconductor technology > > in 2006 has been carried out relevant report to the > > (34 6 phase of volume 451-455 pages in 2006) that affects of aluminium nitride insulation property to this, by the measurement to all region insulation resistance of aluminum-nitride-based film perforation before and after laser drilling, the comparison of structure and ESEM composition, analyzed the impact of laser drilling on aluminium nitride insulation property.
The thin film metallized > > (18 5 phase of volume 22-23 pages in 1999) of the < < AlN substrate that the people such as high energy force delivered on < < electronic component and material > > in 1999, reported that TiW-Au is the good metallization system of AlN, there is conductive materials in AlN material, through watery hydrochloric acid, process and can remove conductive materials after laser scribing.Therefore, the aluminum-nitride-based thin film circuit manufacture craft that possesses at present soldering function surface coating structure and different form feature, also be to use watery hydrochloric acid to carry out immersion treatment conductive phase after including non-metallic rectangular through-hole and profile laser processing is complete, adopt the method, through substrate, cleaning successively, vacuum moulding machine Seed Layer film, photoengraving is prepared circuitous pattern, electrotinning welding coat, laser processing rectangular through-hole and profile, after the operations such as watery hydrochloric acid processing, metal conduction band around rectangular through-hole and the firmness of back ground plane rete and aluminium nitride chip obviously reduce, even there is local peeling.This is to cause fine aluminium to generate or when aluminium nitride dielectric strength reduces due to the aluminum-nitride-based thin film circuit of laser processing different form, has also caused local diffusion and the oxidation of Ni in soldering coating or Cu/Ni.Hydrochloric acid, when dissolving the conductive phase of removing laser processing generation, is also removed the cupric oxide generating or nickel oxide dissolving, causes the not firm phenomenon of local coating to occur, so has long-term reliability hidden danger.
Summary of the invention
The object of this invention is to provide a kind of high reliability for making the manufacture method of aluminum-nitride-based thin film circuit, solve prior art and make the problem that the reliability existing in aluminum-nitride-based thin film circuit process is low, metal conduction band coating worsens.
To achieve these goals, the technical solution of employing is in the present invention:
An aluminum-nitride-based thin film circuit manufacture method, comprises the following steps:
Step 101: clean aluminium nitride chip;
Step 102: aluminium nitride chip is arranged to formation obverse and reverse and there is seed metallization layer film;
Step 103: use the preparation of chemical wet etching technique to form the circuitous pattern containing different form feature on positive seed metallization layer film;
Step 104: the inner rectangular through hole of the aluminum-nitride-based thin film circuit of laser processing or inner rectangular through hole and abnormality in outer shape part;
Step 105: watery hydrochloric acid is processed;
Step 106: preparation soldering function surface coating;
Step 107: the conventional part of profile of using the aluminum-nitride-based thin film circuit of sand-wheel slice cutting machine cutting-up.
Preferably, in described step 101, the method for described cleaning aluminium nitride chip is for cleaning, dehydrate through chromic acid lotion processing, washed with de-ionized water, pickling, secondary deionized water successively.
Preferably, in described step 102, the mode that described aluminium nitride chip obverse and reverse forms seed metallization layer film is sputter coating mode or electron-beam evaporation mode, and obverse and reverse forms seed metallization layer film and adopts identical mode, or different modes.
Preferably, in described step 103, the method for using chemical wet etching technique to form circuitous pattern is: through even glue, front baking, exposure, development, after baking, etching, remove photoresist after step, on the front metal film of aluminium nitride chip, form circuitous pattern.
Preferably, in described step 103, described different form is characterized as and includes one or more non-metallic rectangular through-hole; Profile or be rectangle, or for to lack the polygon forming after one or more isosceles right triangle on four angles of rectangle.
Preferably, in described step 104, described abnormality in outer shape partly at least to lack the limit forming after an isosceles right triangle on four angles of rectangle.
Preferably, in described step 105, the method that watery hydrochloric acid is processed is: aluminium nitride chip is put into watery hydrochloric acid and soak, when no longer including bubble and overflow from watery hydrochloric acid, aluminium nitride chip is taken out rapidly from watery hydrochloric acid, then use a large amount of deionized water rinsings 5 minutes, then with acetone Ultrasonic Cleaning, within 2 minutes, carry out processed successively, finally with nitrogen, dry up.
Preferably, in described step 106, during soldering function surface preparation of coatings, if form the condition of conductive path in circuitous pattern, do not possess, electro-plating method is: first adopt thin gold wire bonding conducting, and electrotinning solder plating then, then remove the thin spun gold of bonding.
Preferably, in described step 107, described conventional profile is partly rectangle or on four angles of rectangle, at least lacks a remainder after isosceles right triangle for rectangle four edges.
Preferably, in described step 101, described aluminum-nitride-based sheet material is the aluminium nitride of purity 98%, and thickness is 0.1mm to 0.5mm; In step 104, described laser is Nd:YAG laser or CO
2laser; In step 106, soldering function surface coating structure is: Ni/Au or Cu/Ni/Au.
Preferably, in described step 103, from around, transmission line distance is less than or equal to 30 microns at non-metallic rectangular through-hole edge.
Preferably, in described step 103, the right-angle side of isosceles right triangle is less than half length of rectangle length and width smaller.
Profitable effect of the present invention is:
The aluminum-nitride-based thin film circuit manufacture method that possesses soldering function surface coating structure and different form feature possesses following advantage: the aluminum-nitride-based thin film circuit of making not only has good metal conduction band coating morphology, and can meet highly reliable multi-functional requirement, especially non-metallic rectangular through-hole soldering functional coating conduction band and substrate firm binding force around, circuit global reliability significantly improves, and is applicable to batch production.
Accompanying drawing explanation
Fig. 1 is the method flow diagram that aluminum-nitride-based thin film circuit is made.
Fig. 2 is a kind of structural representation that possesses the aluminum-nitride-based thin film circuit of soldering function surface coating structure and different form feature.
Fig. 3 is the structural representation of step 101 product.
Fig. 4 is the structural representation of step 102 product.
Fig. 5 is the structural representation of step 103 product.
Fig. 6 is the structural representation of step 104 product.
Fig. 7 is the structural representation of step 105 product.
Fig. 8 is the structural representation of step 106 product.
Fig. 9 is the structural representation of spun gold interconnection in step 106 process.
Figure 10 realizes in step 106 process electroplating the structural representation of making.
Figure 11 is the structural representation of step 107 product.
Embodiment
Below in conjunction with accompanying drawing 1 to Figure 11, the present invention is described in detail:
An aluminum-nitride-based thin film circuit manufacture method, comprises the following steps:
Step 101: clean aluminium nitride chip, clean the method for aluminium nitride chip for cleaning, dehydrate through chromic acid lotion processing, washed with de-ionized water, pickling, secondary deionized water successively.
Step 102: aluminium nitride chip is arranged to formation obverse and reverse and there is seed metallization layer film.The mode that described aluminium nitride chip obverse and reverse forms seed metallization layer film is sputter coating mode or electron-beam evaporation mode, and obverse and reverse forms seed metallization layer film and adopts identical mode, or different modes.
Step 103: use the preparation of chemical wet etching technique to form the circuitous pattern containing different form feature on positive seed metallization layer film.The method of using chemical wet etching technique to form circuitous pattern is: through even glue, front baking, exposure, development, after baking, etching, remove photoresist after step, on the front metal film of aluminium nitride chip, form circuitous pattern.Described different form is characterized as and includes one or more non-metallic rectangular through-hole; Profile or be rectangle, or for to lack the polygon forming after one or more isosceles right triangle on four angles of rectangle.
Step 104: the inner rectangular through hole of the aluminum-nitride-based thin film circuit of laser processing or inner rectangular through hole and abnormality in outer shape part.Described abnormality in outer shape partly at least to lack the limit forming after an isosceles right triangle on four angles of rectangle.
Step 105: watery hydrochloric acid is processed.The method that watery hydrochloric acid is processed is: aluminium nitride chip is put into watery hydrochloric acid and soak, when no longer including bubble and overflow from watery hydrochloric acid, aluminium nitride chip is taken out rapidly from watery hydrochloric acid, then use a large amount of deionized water rinsings 5 minutes, with acetone Ultrasonic Cleaning, within 2 minutes, carry out processed successively again, finally with nitrogen, dry up.
Step 106: preparation soldering function surface coating.During soldering function surface preparation of coatings, if form the condition of conductive path in circuitous pattern, do not possess, electro-plating method is: first adopt thin gold wire bonding conducting, and electrotinning solder plating then, then remove the thin spun gold of bonding.
Step 107: the conventional part of profile of using the aluminum-nitride-based thin film circuit of sand-wheel slice cutting machine cutting-up.Described conventional profile is partly rectangle or on four angles of rectangle, at least lacks a remainder after isosceles right triangle for rectangle four edges.
Preferably, in described step 101, described aluminum-nitride-based sheet material is the aluminium nitride of purity 98%, and thickness is 0.1mm to 0.5mm; In step 103, from around, transmission line distance is less than or equal to 30 microns at non-metallic rectangular through-hole edge, and the right-angle side of isosceles right triangle is less than half length of rectangle length and width smaller; In step 104, described laser is Nd:YAG laser or CO
2laser; In step 106, soldering function surface coating structure is: Ni/Au or Cu/Ni/Au.
A kind of schematic diagram that possesses the aluminum-nitride-based thin film circuit 300 of soldering function surface coating structure and different form feature as shown in Figure 2, aluminum-nitride-based thin film circuit 300 thickness are 0.254mm, profile is comprised of abnormality in outer shape part 301 and the conventional part 302 of profile, abnormality in outer shape part 301 is at long L1, on four angles of rectangle of wide W1, lack 4 right-angle sides and be the four edges forming after the isosceles right triangle of L, the conventional part 302 of profile is at long L1, the rectangle four edges of wide W1 lacks four remainders after isosceles right triangle on four angles of rectangle, the wide W1 of the long L1> of rectangle, L=W1/4.Aluminum-nitride-based thin film circuit 300 includes two non-metallic rectangular through-hole 303.Two non-metallic rectangular through-hole 303 separate transmission line 304, and from around, transmission line 304 distances are 30 microns at non-metallic rectangular through-hole 303 edges.
Fig. 3 to Figure 11 further illustrates detailed manufacture method of the present invention and step.
Step 101, cleans aluminium nitride chip 309.Clean the method for aluminium nitride chip 309 for cleaning, dehydrate through chromic acid lotion processing, deionization washing, pickling, secondary deionized water successively.Concrete steps are: 1. aluminium nitride chip 309 is positioned in chromic acid lotion and is soaked 12 hours, be oxidized and the large molecule organic stains such as grease of Ex-all substrate surface, then aluminium nitride chip 309 is taken out clean with a large amount of deionized water rinsings.2. by aluminium nitride chip 309 use deionized water ultrasonic cleaning 5 minutes, then use fixture clamping aluminium nitride chip 309 successively through carrying out ultrasonic cleaning 3 minutes in two containers that fill respectively acetone, then brush and be dried processing with nitrogen.3. aluminium nitride chip 309 is soaked 3 hours in the hydrochloric acid of 40～45 ℃ of temperature, then with deionized water, rinse well.4. aluminium nitride chip 309 is used to deionized water Ultrasonic Cleaning 5 minutes for the second time.5. use fixture clamping aluminium nitride chip 309 successively through two beaker ultrasonic cleaning that fill respectively acetone 3 minutes, then with nitrogen, brush dry processing, finally the aluminium nitride chip cleaning up 309 is carried out to microscopy.Cleaned aluminium nitride chip 309 as shown in Figure 3.
Step 102, arranges aluminium nitride chip 309 to form positive, reverse side seed metallization layer film 311, as shown in Figure 4.Aluminium nitride chip 309 fronts after cleaning up, reverse side be vacuum deposited metal Seed Layer film respectively, and metallic film 311 materials are TiW/Au film, by magnetically controlled sputter method, prepare, and TiW, Au film thickness are respectively 50nm and 200nm.
Step 103 is used the preparation of chemical wet etching technique to form the circuitous pattern 308 containing different form feature, as shown in Figure 5 on front metal Seed Layer film 311.The mask plate design of making aluminum-nitride-based thin film circuit figure is as follows: form containing the circuitous pattern 308 of different form feature by the element circuit figure 310 of 4 * 2 array formats and electroplate and be communicated with district 317 and form, plating connection district 317 is positioned at outside element circuit figure 310 active graphicals of 4 * 2 array formats.Element circuit figure 310 is comprised of conduction band figure 316, abnormality in outer shape part figure 312, rectangular profile figure 313, rectangular through-hole figure 314 and conducting line 315, and the live width of abnormality in outer shape part figure 312, rectangular profile figure 313, rectangular through-hole figure 314 and conducting line 315 is 80 microns.During photoengraving circuitous pattern; protection reverse side seed metallization layer film 311; rotary coating one deck RZJ-390PG type positive photoresist on front metal film 311 surfaces of aluminium nitride chip 309; even glue rotating speed 3000rpm; the even glue time is 30 seconds; then front baking 10 minutes in 90 ℃ of thermostatic drying chambers, adopts ultraviolet contact exposure, light intensity 6.5mW/cm during exposure
2, 13 seconds time for exposure, the rear use RZX-3038 type developing liquid developing that exposed, develops under room temperature 20 seconds, through rinsed with deionized water, after 30 seconds, with nitrogen, dries up.After being placed on again in 120 ℃ of thermostatic drying chambers, dry 20 minutes.Through even glue, front baking, exposure, development and after dry series of steps, just front metal film 311 upper surfaces at this aluminium nitride chip 309 obtain resist figure.Then with Wagner's reagent, at room temperature corrode Au film 20 seconds, after corrosion is clean, re-use hydrogen peroxide and at room temperature corrode TiW film 200 seconds, front metal film 311 upper surfaces at this aluminium nitride chip 309 reappear the circuitous pattern identical with photoresist.Remove the protective layer on reverse side seed metallization layer film 311, then remove photoresist, obtain the aluminium nitride chip 309 that an one side is formed with circuitous pattern.The concrete grammar removing photoresist is: first use at room temperature ultrasonic wave processing of acetone 1 minute, photoresist is removed clean, then the aluminium nitride chip 309 use deionized waters that upper surface formed to circuitous pattern clean up, dry, on aluminium nitride chip 309, complete chemical wet etching and form the making containing the circuitous pattern 308 of different form feature.
Step 104, the synthesis of the inner rectangular through hole of the aluminum-nitride-based circuit of laser processing different form and abnormality in outer shape part, as shown in Figure 6.Next, setting voltage is 500V, frequency is 5Hz, the parameter such as optimal speed and stream of nitrogen gas, is used a Nd:YAG laser machine to form containing the abnormality in outer shape part figure 312 of 4 * 2 array formats in the circuitous pattern 308 of different form feature and the region at rectangular through-hole figure 314 places and carry out successively serial process operation photoengraving on aluminium nitride chip 309.Laser beam is constantly by by aluminium nitride material fusing and gasification, completed the processing of profile unusual part 301 and two non-metallic rectangular through-hole 303 in the aluminum-nitride-based thin film circuit 300 of 4 * 2 array formats.
Step 105, watery hydrochloric acid is processed, as shown in Figure 7.Aluminium nitride chip 309 is put into watery hydrochloric acid and soak, in the aluminum-nitride-based thin film circuit 300 of 4 * 2 array formats, profile unusual part 301 and two non-metallic rectangular through-hole 303 places have a large amount of bubbles and overflow from watery hydrochloric acid.When no longer including bubble and overflow from watery hydrochloric acid, aluminium nitride chip 309 is taken out rapidly from watery hydrochloric acid, then use a large amount of deionized water rinsings 5 minutes, then with acetone Ultrasonic Cleaning, within 2 minutes, carry out processed successively, finally with nitrogen, dry up.
Step 106, preparation soldering function surface coating, as shown in Figure 8.The metal conduction band figure 316 first non-metallic rectangular through-hole 303 on aluminium nitride chip 309 being separated interconnects by spun gold 318, the method of spun gold 318 interconnection is for adopting 18 μ m gold ball bondings, conduction band figure 316, rectangular profile figure 313, conducting line 315 and spun gold 318 form conductive path, as shown in Figure 9.Then, aluminium nitride chip 309 is immersed in 25 ℃ of degreasers and processed 60 seconds, with deionized water, get express developed 30 seconds, then aluminium nitride chip 309 is put into hydrochloric acid microetch 60 seconds, with deionized water, get express developed 30 seconds, be communicated with power supply and current density and electroplating time are set to respectively to 10mA/cm
2with 10 minutes, front conductive path figure and back ground plane were prepared nickel coating 2 μ m.After electronickelling finishes, with deionized water, aluminium nitride chip 309 is rinsed 60 seconds immediately, proceed electrogilding operation.Current density and electroplating time are set to respectively to 4mA/cm
2with 15 minutes, front conductive path figure and back ground plane were prepared gold plate 3 μ m again.After plating finishes, first with deionized water, aluminium nitride chip 309 is rinsed 60 seconds, then dry up with nitrogen.After oil removing, pickling, the electronickelling of rack plating mode, rack plating mode electrogilding series of steps, on the front of this aluminium nitride English substrate 309 conductive path figure and back ground plane, realized the making of electroplated Ni/Au, as shown in figure 10 successively.Finally, use scalpel will interconnect spun gold 318 removals totally, this has just completed the making of soldering function surface coating on aluminium nitride chip 309.
Step 107, the conventional part of profile of the aluminum-nitride-based circuit of use sand-wheel slice cutting machine cutting-up different form, as shown in figure 11.The blue film of aluminium nitride chip 309 back of the body subsides of electroplating soldering function surface coating will be completed, then workpiece plate adopts fixedly aluminium nitride chip 309 of vacuum suction mode, the speed of mainshaft is set to 30000rpm, feed speed is set to 5mm/s, cutting position is found in the image unit identification of configuration, cutting-up is carried out respectively in the region at rectangular profile figure 313 places of 4 * 2 array formats on aluminium nitride chip 309, realized the cutting-up of the conventional part 302 of profile in the aluminum-nitride-based thin film circuit 300 of 4 * 2 array formats, finally from blue film, take off 8 aluminum-nitride-based thin film circuits 300 successively.
In sum, a kind of aluminum-nitride-based thin film circuit manufacture method that possesses soldering function surface coating structure and different form feature of the present invention, the aluminum-nitride-based thin film circuit of making not only has good metal conduction band coating morphology, and can meet highly reliable multi-functional requirement, especially non-metallic rectangular through-hole soldering functional coating conduction band and substrate firm binding force around, circuit global reliability significantly improves, and is applicable to batch production.
Certainly, above-mentioned explanation is not limitation of the present invention, and the present invention is also not limited in above-mentioned giving an example, and the variation that those skilled in the art make in essential scope of the present invention, remodeling, interpolation or replacement, also should belong to protection scope of the present invention.
Claims (10)
1. an aluminum-nitride-based thin film circuit manufacture method, is characterized in that, comprises the following steps:
Step 101: clean aluminium nitride chip;
Step 102: aluminium nitride chip is arranged to formation obverse and reverse and there is seed metallization layer film;
Step 103: use the preparation of chemical wet etching technique to form the circuitous pattern containing different form feature on positive seed metallization layer film;
Step 104: the inner rectangular through hole of the aluminum-nitride-based thin film circuit of laser processing or inner rectangular through hole and abnormality in outer shape part;
Step 105: watery hydrochloric acid is processed;
Step 106: preparation soldering function surface coating;
Step 107: the conventional part of profile of using the aluminum-nitride-based thin film circuit of sand-wheel slice cutting machine cutting-up.
2. aluminum-nitride-based thin film circuit manufacture method according to claim 1, it is characterized in that, in described step 101, the method for described cleaning aluminium nitride chip is for cleaning, dehydrate through chromic acid lotion processing, washed with de-ionized water, pickling, secondary deionized water successively.
3. aluminum-nitride-based thin film circuit manufacture method according to claim 1, it is characterized in that, in described step 102, the mode that described aluminium nitride chip obverse and reverse forms seed metallization layer film is sputter coating mode or electron-beam evaporation mode, obverse and reverse forms seed metallization layer film and adopts identical mode, or different modes.
4. aluminum-nitride-based thin film circuit manufacture method according to claim 1, it is characterized in that, in described step 103, the method of using chemical wet etching technique to form circuitous pattern is: through even glue, front baking, exposure, development, after baking, etching, remove photoresist after step, on the front metal film of aluminium nitride chip, form circuitous pattern.
5. aluminum-nitride-based thin film circuit manufacture method according to claim 1, is characterized in that, in described step 103, described different form is characterized as and includes one or more non-metallic rectangular through-hole; Profile or be rectangle, or for to lack the polygon forming after one or more isosceles right triangle on four angles of rectangle.
6. aluminum-nitride-based thin film circuit manufacture method according to claim 1, is characterized in that, in described step 104, described abnormality in outer shape partly at least to lack the limit forming after an isosceles right triangle on four angles of rectangle.
7. aluminum-nitride-based thin film circuit manufacture method according to claim 1, it is characterized in that, in described step 105, the method that watery hydrochloric acid is processed is: aluminium nitride chip is put into watery hydrochloric acid and soak, when no longer including bubble and overflow from watery hydrochloric acid, aluminium nitride chip is taken out rapidly from watery hydrochloric acid, then use a large amount of deionized water rinsings 5 minutes, with acetone Ultrasonic Cleaning, within 2 minutes, carry out processed successively again, finally with nitrogen, dry up.
8. aluminum-nitride-based thin film circuit manufacture method according to claim 1, it is characterized in that, in described step 106, during soldering function surface preparation of coatings, if forming the condition of conductive path in circuitous pattern does not possess, electro-plating method is: first adopt thin gold wire bonding conducting, and electrotinning solder plating then, then remove the thin spun gold of bonding.
9. aluminum-nitride-based thin film circuit manufacture method according to claim 1, it is characterized in that, in described step 107, described conventional profile is partly rectangle or on four angles of rectangle, at least lacks a remainder after isosceles right triangle for rectangle four edges.
10. aluminum-nitride-based thin film circuit manufacture method according to claim 1, is characterized in that, in described step 101, described aluminum-nitride-based sheet material is the aluminium nitride of purity 98%, and thickness is 0.1mm to 0.5mm; In step 104, described laser is Nd:YAG laser or CO
2laser; In step 106, soldering function surface coating structure is: Ni/Au or Cu/Ni/Au.
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| CN107419230A (en) * | 2017-07-06 | 2017-12-01 | 中国电子科技集团公司第四十研究所 | A kind of thin film circuit via metal film plating process |
| CN109152221A (en) * | 2018-09-06 | 2019-01-04 | 中国电子科技集团公司第三十八研究所 | The forming method of shallow-layer circuit shape cavity on a kind of low-temperature co-fired ceramic substrate |
| CN112958906A (en) * | 2021-03-25 | 2021-06-15 | 南京航空航天大学 | Laser processing device and method suitable for AlN plate |
| CN113594155A (en) * | 2021-07-04 | 2021-11-02 | 株洲宏达电子股份有限公司 | Preparation process of thin film microstrip circuit |
| CN113764571A (en) * | 2021-09-07 | 2021-12-07 | 绍兴中芯集成电路制造股份有限公司 | Processing method of substrate with aluminum nitride film layer and preparation method of filter |
| CN115417697A (en) * | 2022-08-24 | 2022-12-02 | 镇江锦兴表面工程技术有限公司 | Process for metallizing and electroplating nickel and gold on aluminum nitride ceramic wafer |
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| CN107419230A (en) * | 2017-07-06 | 2017-12-01 | 中国电子科技集团公司第四十研究所 | A kind of thin film circuit via metal film plating process |
| CN107419230B (en) * | 2017-07-06 | 2019-07-09 | 中国电子科技集团公司第四十一研究所 | A kind of thin film circuit via metal film plating process |
| CN109152221A (en) * | 2018-09-06 | 2019-01-04 | 中国电子科技集团公司第三十八研究所 | The forming method of shallow-layer circuit shape cavity on a kind of low-temperature co-fired ceramic substrate |
| CN109152221B (en) * | 2018-09-06 | 2020-08-11 | 中国电子科技集团公司第三十八研究所 | Forming method of shallow-layer loop-shaped cavity on low-temperature co-fired ceramic substrate |
| CN112958906A (en) * | 2021-03-25 | 2021-06-15 | 南京航空航天大学 | Laser processing device and method suitable for AlN plate |
| CN113594155A (en) * | 2021-07-04 | 2021-11-02 | 株洲宏达电子股份有限公司 | Preparation process of thin film microstrip circuit |
| CN113764571A (en) * | 2021-09-07 | 2021-12-07 | 绍兴中芯集成电路制造股份有限公司 | Processing method of substrate with aluminum nitride film layer and preparation method of filter |
| CN113764571B (en) * | 2021-09-07 | 2024-01-23 | 绍兴中芯集成电路制造股份有限公司 | Processing method of substrate with aluminum nitride film layer and preparation method of filter |
| CN115417697A (en) * | 2022-08-24 | 2022-12-02 | 镇江锦兴表面工程技术有限公司 | Process for metallizing and electroplating nickel and gold on aluminum nitride ceramic wafer |
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