CN102469700A - Method for manufacturing circuit board and circuit board - Google Patents
Method for manufacturing circuit board and circuit board Download PDFInfo
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- CN102469700A CN102469700A CN2010105446330A CN201010544633A CN102469700A CN 102469700 A CN102469700 A CN 102469700A CN 2010105446330 A CN2010105446330 A CN 2010105446330A CN 201010544633 A CN201010544633 A CN 201010544633A CN 102469700 A CN102469700 A CN 102469700A
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- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 238000005234 chemical deposition Methods 0.000 claims abstract description 9
- 238000005289 physical deposition Methods 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 33
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 33
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- 238000010884 ion-beam technique Methods 0.000 claims description 14
- 238000003801 milling Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000009849 vacuum degassing Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000013527 degreasing agent Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 11
- 239000012528 membrane Substances 0.000 abstract description 3
- 238000007781 pre-processing Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000007747 plating Methods 0.000 description 9
- 230000005611 electricity Effects 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000007872 degassing Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
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- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
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- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
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Abstract
The invention provides a method for manufacturing a circuit board and the circuit board. The method comprises the following steps of: preprocessing a substrate; manufacturing a seed layer on the substrate; and manufacturing a conducting circuit on the seed layer, wherein the seed layer comprises an adhesion layer and a conducting membrane; and a method for manufacturing the seed layer comprises the following steps of: A, manufacturing the adhesion layer on the surface of the substrate; and B, manufacturing the conducting membrane on the surface of the adhesion layer by a chemical deposition technology and/or a physical deposition technology. The seed layer manufactured by the method has high bonding force with the substrate and a smooth surface, and is low in manufacturing cost. The bonding force between the substrate and the seed layer of the circuit board can be over 7N/cm, and loss of the conducting circuit in the process of transmitting high-frequency signals is small.
Description
Technical field
The present invention relates to a kind of method and circuit board of circuit board manufacturing.
Background technology
Along with development of electronic technology, printed circuit board (PCB) has replaced the connected mode of conditional electronic components and parts, is widely used in the electronic product.At present, manufacturing enterprise adopts subtractive process to make printed circuit board (PCB) more, however the subtractive process complex process, and can produce a large amount of waste water and pollutant in the production process, be unfavorable for environmental protection.For this reason, people have developed addition process and have made printed circuit board (PCB).
Addition process is in substrate surface conductive metal deposition selectively, thereby forms conducting wire (conductive layer).The manufacturing process flow of addition process generally includes: substrate → Seed Layer → conducting wire → electricity gold layer → solder mask → other handling process.Wherein, Seed Layer be for make substrate satisfy conducting wire in the subsequent treatment when electroplating necessary condition and at the conductive layer that substrate surface is made, require the Seed Layer smooth surface, and with substrate can good binding.In above-mentioned technological process, Seed Layer can obtain through dual mode:
First electroless copper plating (PHT) technology; The Seed Layer of electroless copper plating fabrication techniques is to be connected with physics mode with substrate, in actual production process, in order to improve the adhesion between Seed Layer and the substrate; Before electroless copper plating technology, to increase the roughness of substrate; This must make the roughness attached to its surperficial Seed Layer increase, thereby makes the surperficial roughness in conducting wire on Seed Layer surface also increase, and then causes the increase of high-frequency signal transmission loss.In addition, can meet design requirement in order to make the adhesion between Seed Layer and the substrate, the selectable baseplate material of electroless copper plating fabrication techniques Seed Layer is limited in scope.Owing to have above-mentioned defective, limited the electroless copper plating technology and further applied in field of circuit boards.
It two is magnetron sputtering techniques; The Seed Layer that magnetron sputtering technique is made can reach combining of atom magnitude with substrate; Therefore, the roughness that need not increase substrate surface just can make Seed Layer and substrate obtain good combination, and this has enlarged the range of choice of baseplate material; And the Seed Layer smooth surface of making, the loss in the time of can reducing transmitting high-frequency signal.Although magnetron sputtering technique has solved the existing above-mentioned defective of electroless copper plating technology; But; The operating cost of magnetron sputtering technique is higher, is example with preparation titanium copper composition metal conductive layer, and the required expense of preparation copper layer conductive layer accounts for more than 90% of entire circuit plate processing cost.In addition, magnetron sputtering technique is on the low side to the utilance of target, is no more than 40%.Because operating cost is higher, the promotion and application of magnetron sputtering technique have therefore been limited in field of circuit boards.
Summary of the invention
Technical problem to be solved by this invention is exactly to the above-mentioned defective that exists in the prior art, and a kind of method of circuit board manufacturing Seed Layer is provided, and it can produce ganoid Seed Layer at low cost, and the adhesion of Seed Layer and substrate is good.
Solve the problems of the technologies described above the method that the technical scheme that is adopted is this circuit board manufacturing, may further comprise the steps: pretreated substrate; On said substrate, make Seed Layer; On said Seed Layer, make the conducting wire, said Seed Layer comprises adhesion layer and conducting film, and makes through following steps: A. makes said adhesion layer on the surface of said substrate; B. make said conducting film through chemical deposition technique and/or physical deposition techniques on the surface of said adhesion layer.
Preferably, the thickness of said adhesion layer is the 1/100-1/3 of said Seed Layer gross thickness, is preferably 1/50-1/5; And/or the thickness of said adhesion layer is 10～100nm, is preferably 20～60nm.
When preferably, making said adhesion layer in the steps A: vacuum degree is 1 * 10
-3～9 * 10
-3Mbar is preferably 1 * 10
-3～5 * 10
-3Mbar, voltage are 500～700V, and argon flow amount is 300～450sccm, is preferably 350～400sccm.
Preferably, before implementation step A, said substrate is carried out ion beam milling, preferably, when said ion beam milling: vacuum degree 1 * 10
-4～9.0 * 10
-4Mbar is preferably 2 * 10
-4～5.0 * 10
-4Mbar; Voltage 2000～2800V is preferably 2200～2500V; Electric current 550～750mA is preferably 600～700mA; Etching period 2～10min is preferably 4～8min.
Preferably, before implementation step A, said substrate is carried out vacuum degassing, preferably, when said vacuum degassing: vacuum degree 1.0 * 10
-4～5.0 * 10
-4Mbar is preferably 1.0 * 10
-4～3.0 * 10
-4Mbar; 100 ℃～120 ℃ of temperature;
Preferably, the step of said pretreated substrate comprises: adopt deionized water to wash, and/or adopt alkaline degreaser to carry out oil removing, and/or ultrasonic waves for cleaning, and/or oven dry.
More preferably, oven dry is carried out under 100 ℃～180 ℃ temperature, and/or oven dry is dried in inert atmosphere.
Preferably, said adhesion layer is become by titanium, nickel, chromium or copper; And/or said conducting film is copper film or nickel film or tin film.
Preferably, the material of said substrate is resin substrate, glass fabric substrate or ceramic substrate.
Preferably, after steps A, detect the surface roughness of said adhesion layer; And/or, after step B, detect the surface roughness of said conducting film.
Preferably, utilize magnetron sputtering technique to make said adhesion layer on the surface of said substrate.
In addition, the present invention also provides a kind of circuit board, and this circuit board is the circuit board of making through circuit board manufacturing method provided by the invention, wherein, said Seed Layer comprise strong bonded in the adhesion layer of substrate be formed on the conducting film on the said adhesion layer.
The present invention has following beneficial effect:
First; The method of circuit board manufacturing provided by the invention is when making Seed Layer; At first make the adhesion layer that thickness is lower than the Seed Layer desired thickness at substrate surface through magnetron sputtering technique; Utilize lower chemical deposition technique of operating cost and/or physical deposition techniques to make conducting film again, thereby form Seed Layer.The method of this making Seed Layer has reduced cost of manufacture for utilizing magnetron sputtering technique making Seed Layer.And, therefore can reduce the waste of target because adhesion layer is thinner, help energy-saving and emission-reduction
Second; Adhesion between substrate and the adhesion layer can reach more than the 7N/cm, and the adhesion of conducting film and adhesion layer can reach tens even go up hectonewton/cm, therefore; The adhesion of substrate and Seed Layer can reach more than the 7N/cm, can satisfy the designing requirement of circuit board fully.
The 3rd, magnetron sputtering is made tack coat need be to the substrate roughened, and the tie layer surface of making is smooth, thereby can obtain smooth conducting film, on the basis of smooth conducting film, can obtain smooth conducting wire.Therefore, the conductive layer of being made by method provided by the invention can reduce the loss of high-frequency signal.
The 4th, utilize magnetron sputtering technique to make adhesion layer, the scope of alternative baseplate material is wideer, thereby overcomes the shortcoming that can select the baseplate material narrow range when chemical deposition technique is made Seed Layer.
Similarly, circuit board provided by the invention, the adhesion of Seed Layer and substrate can reach more than the 7N/cm, and the conducting wire smooth surface, and the loss when transmitting high-frequency signal is little.
Description of drawings
Fig. 1 is the making flow chart of present embodiment circuit board.
Embodiment
The method of circuit board manufacturing provided by the invention may further comprise the steps: pretreated substrate; On said substrate, make Seed Layer; On said Seed Layer, make the conducting wire, said Seed Layer comprises adhesion layer and conducting film, and makes through following steps: A. makes said adhesion layer on the surface of said substrate; B. make said conducting film through chemical deposition technique and/or physical deposition techniques on the surface of said adhesion layer.
In various embodiments of the present invention, preferably, the thickness of said adhesion layer is the 1/100-1/3 of said Seed Layer gross thickness, is preferably 1/50-1/5; And/or the thickness of said adhesion layer is 10～100nm, is preferably 20～60nm.
In various embodiments of the present invention, preferably, when making said adhesion layer in the steps A: vacuum degree is 1 * 10
-3～9 * 10
-3Mbar is preferably 1 * 10
-3～5 * 10
-3Mbar, voltage are 500～700V, and argon flow amount is 300～450sccm, is preferably 350～400sccm.
In various embodiments of the present invention, preferably, before implementation step A, said substrate is carried out ion beam milling, preferably, when said ion beam milling: vacuum degree 1 * 10
-4～9.0 * 10
-4Mbar is preferably 2 * 10
-4～5.0 * 10
-4Mbar; Voltage 2000～2800V is preferably 2200～2500V; Electric current 550～750mA is preferably 600～700mA; Etching period 2～10min is preferably 4～8min.
In various embodiments of the present invention, preferably, before implementation step A, said substrate is carried out vacuum degassing, preferably, when said vacuum degassing: vacuum degree 1.0 * 10
-4～5.0 * 10
-4Mbar is preferably 1.0 * 10
-4～3.0 * 10
-4Mbar; 100 ℃～120 ℃ of temperature;
In various embodiments of the present invention, preferably, the step of said pretreated substrate comprises: adopt deionized water to wash, and/or adopt alkaline degreaser to carry out oil removing, and/or ultrasonic waves for cleaning, and/or oven dry.
In various embodiments of the present invention, more preferably, oven dry is carried out under 100 ℃～180 ℃ temperature, and/or oven dry is dried in inert atmosphere.
In various embodiments of the present invention, preferably, said adhesion layer is become by titanium, nickel, chromium or copper; And/or said conducting film is copper film or nickel film or tin film.
In various embodiments of the present invention, preferably, the material of said substrate is resin substrate, glass fabric substrate or ceramic substrate.
In various embodiments of the present invention, preferably, after steps A, detect the surface roughness of said adhesion layer; And/or, after step B, detect the surface roughness of said conducting film.
In various embodiments of the present invention, preferably, utilize magnetron sputtering technique to make said adhesion layer on the surface of said substrate.
In addition, the present invention also provides a kind of circuit board, and this circuit board is the circuit board of making through circuit board manufacturing method provided by the invention, wherein, said Seed Layer comprise strong bonded in the adhesion layer of substrate be formed on the conducting film on the said adhesion layer.
Seed Layer of the present invention comprises adhesion layer and conducting film, and adhesion layer is to be arranged on the transition zone between substrate and the conducting film for the adhesion that improves conducting film and substrate.
For this reason, the manufacture method of circuit board Seed Layer provided by the invention can may further comprise the steps: (A) utilize magnetron sputtering technique to make adhesion layer on the surface of said substrate.Adhesion layer can be made with metallic copper, titanium, chromium or nickel, because the adhesion of titanium and insulating material is superior to copper, and also the sputter rate of titanium, therefore, the preferable alloy titanium.(B) make conducting film through chemical deposition technique and/or physical deposition techniques on the surface of said adhesion layer.Conducting film can adopt electroless copper plating, the heavy tin of chemistry or chemical sinking nickel to make corresponding copper layer, tin layer or nickel dam, or utilizes chemical deposition technique to make other conductive metal layer.
When making Seed Layer, can make Seed Layer on the whole surface of substrate; After the conducting wire making finished, the invalid Seed Layer that will be positioned at again beyond the lower zone of conducting wire was removed.
The mode of removing invalid Seed Layer has two kinds:
First kind of removing method is whole etching method, is about to the entire circuit plate and is exposed in the etching solution, and etching solution is removed Seed Layer then.Etch away the partially conductive line layer simultaneously yet this removing method is inevitable, cause the size (thickness and width) of conducting wire to reduce.Therefore; Its size is greater than design size when making the conducting wire; And the difference of the size of the conducting wire of actual fabrication and the design size size that the conducting wire is etched when being the etching Seed Layer, after the etching Seed Layer, the size of conducting wire just equals design size like this.
Second kind of removing method is to select etched zone.Particularly, before the etching Seed Layer, at first the conducting wire is covered, corrode the conducting wire to avoid etching solution with barrier layer.After the Seed Layer beyond etching away the conducting wire lower zone, again barrier layer is removed, promptly protected the size of conducting wire by barrier layer.
Yet the operating cost of second kind of removing method is high, and it is bigger to implement difficulty, so the preferred first kind of invalid Seed Layer removing method of actual production.
But, in other embodiments, when making Seed Layer, also can be only make Seed Layer selectively in the zone that substrate surface need be made the conducting wire.In one embodiment, at first substrate surface need not made the regional occlusion of conducting wire, make Seed Layer in non-occluded area then, make the conducting wire on the surface of Seed Layer again, at last said barrier material removed with barrier material.The mode of this making Seed Layer need not removed invalid Seed Layer step, and because the zone outside the conducting wire need not make invalid Seed Layer, therefore saves raw material.
The magnetron sputtering apparatus that the present invention adopted comprises according to what the production order was connected successively uploads buffer chamber, cooling buffer chamber, ion beam milling chamber, sputter coating chamber, unloading buffer chamber, and isolates through separation valve door between each chamber.Wherein, upload buffer chamber and be provided with the thermal radiation heater, be used at vacuum high-temperature degassing procedure heated substrates.But the magnetron sputtering apparatus of realizing the method for the invention is not limited to above-mentioned magnetron sputtering apparatus, also can adopt existing, as can to realize heating in vacuum degasification, ion beam milling cleaning and magnetron sputtering membrane process miscellaneous equipment.
For making those skilled in the art understand technical scheme of the present invention better, be described in detail below in conjunction with the manufacture method of accompanying drawing to circuit board provided by the invention.
See also Fig. 1, be the making flow chart of present embodiment circuit board.Present embodiment is an example to make one deck conducting wire, and substrate adopts epoxy resin base plate, and adhesion layer is made by Titanium, and conducting film is made by metallic copper.The manufacturing process of circuit board is following:
(1) pretreated substrate
One or more of substrate process pretreatment steps: in deionized water, clean 1.0～2.0min; And/or in alkaline degreaser oil removing 1.0～2.0min; And/or ultrasonic wave washing 2.0～3.0min, will wash attached to the dust and the organic pollution of substrate surface through above-mentioned steps, thereby obtain clean substrate.In order to prevent the substrate oxidation, need substrate in time be dried, bake out temperature is 100 ℃～180 ℃; RH (humidity) is 0～900ppm; Drying time 1～3 hour, and preferably in the protective atmosphere such as inert gases such as nitrogen, dry, oxidation takes place in drying course to avoid substrate.
(2) make adhesion layer
(21) heating in vacuum degasification
Open the vacuum chamber of magnetron sputtering apparatus, the substrate of cleaning is placed on the work support of uploading cushion chamber falls, close vacuum chamber, start vaccum-pumping equipment and thermal radiation heater, making substrate is 1.0 * 10 in vacuum degree
-4～5.0 * 10
-4Mbar (millibar) is preferably 1.0 * 10
-4～3.0 * 10
-4Mbar; Temperature in the vacuum chamber is 100～120 ℃, and the degasification time is 2～5min.Afterwards substrate is moved to cooling buffer chamber and being cooled to below 60 ℃ by uploading buffer chamber.
(22) ion beam milling
Substrate is moved on to the ion beam milling chamber carry out ion beam milling.Ion beam milling not only can be removed the oxide/sulfide and the residual organic of substrate surface, and can excite the activation energy of substrate surface atom, thereby improves the adhesion of adhesion layer and substrate.The parameter of ion beam milling is: vacuum degree is 1 * 10
-4～9.0 * 10
-4Mbar is preferably 2 * 10
-4～5.0 * 10
-4Mbar; Voltage is 2000～2800V, is preferably 2200～2500V; Electric current 550～750mA is preferably 600～700mA; Etching period 2～10min is preferably 4～8min.
(23) magnetron sputtering layer of titanium metal
After ion beam milling finishes, substrate is cooled to below 80 ℃, moves to the sputter coating chamber then and carry out the splash-proofing sputtering metal titanium layer, the technological parameter of magnetron sputtering layer of titanium metal is: vacuum degree is 1 * 10
-3～9 * 10
-3Mbar is preferably 1 * 10
-3～5 * 10
-3Mbar; Voltage is 500～700V, is preferably 560～660V; Argon flow amount is 300～450sccm (a standard state ml/min), is preferably 350～400sccm.The thickness of layer of titanium metal is 10～100nm, is preferably 20～60nm.At last substrate is moved on to the unloading buffer chamber, treat that substrate is cooled to below 70 ℃, it is taken out in vacuum chamber, thereby accomplish the preparation of layer of titanium metal.Detect the roughness of layer of titanium metal and can know that the surface roughness of layer of titanium metal can reach 0.06～0.08 μ m.
(3) chemical deposition conductive copper films
Adopt existing electroless copper plating technology to make conductive copper films on the surface of layer of titanium metal, the thickness of conductive copper films can be made according to requirement of client, like 0.8～1.2 μ m.Detecting the roughness of conductive copper films can know, magnetron sputtering technique combines the roughness on the conductive copper films surface of electroless copper plating fabrication techniques to be merely 0.08 μ m, and the adhesion between Seed Layer and the substrate can reach more than the 7N/cm.
(4) make the conducting wire
Adopt existing mask, exposure, development and cleaning step; Make barrier layer (dry film that promptly solidifies) on the surface of conductive copper films; Conductive copper films will need not make the zone, conducting wire is blocked; And the conductive copper films that needs to make the zone, conducting wire is exposed, then through electroplating technology plated conductive circuit.Remove on the barrier layer that will block conductive copper films after the conducting wire completes again.The step of making the conducting wire in the step of making conducting wire and the prior art is identical.
(5) remove conductive copper films
Circuit board is placed in the chemistry erosion copper liquid medicine of the dioxysulfate aqueous systems that often adopts in the prior art, will be positioned at the removal of the conductive copper films outside the conducting wire on the substrate.
(6) remove adhesion layer
After removing conducting film, use the flushing with clean water circuit board, clean up chemistry is lost copper liquid medicine; Again circuit board is placed in the hydrofluoric acid liquid medicine, the layer of titanium metal outside the conducting wire on the substrate is removed.
(7) make electricity gold layer and solder mask
This step is identical with solder mask with existing making electricity gold layer; Be specially: the regional occlusion that will need not make electricity gold layer through figure transfer; Promptly will need not make the regional occlusion of electricity gold layer with dry film; And the zone that needs to make electricity gold layer is exposed, and adopt electroplating technology on the pad of conducting wire, to make electricity gold layer then, at last the dry film that solidifies is removed.
Block the position that will need not make solder mask through figure transfer once more, and the zone that needs to make solder mask is exposed, then with glossy dark green even scrubbing brush at circuit board surface, at last dry film is removed.So far, accomplish the making of circuit board.
Need to prove, in actual production process, also can make electricity gold layer earlier, make solder mask again.
The present invention also provides a kind of circuit board, and this circuit board comprises substrate, Seed Layer and conducting wire, and Seed Layer is between substrate and conducting wire, and Seed Layer obtains through preceding method of the present invention (for example above-mentioned steps (1), (2) and (3)).The conducting wire of circuit board provided by the invention is smooth, and the loss of high-frequency signal is few.
It is understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For the one of ordinary skilled in the art, under the situation that does not break away from spirit of the present invention and essence, can make various modification and improvement, these modification also are regarded as protection scope of the present invention with improving.
Claims (12)
1. the method for a circuit board manufacturing comprises:
Pretreated substrate;
On said substrate, make Seed Layer;
On said Seed Layer, make the conducting wire,
It is characterized in that said Seed Layer comprises adhesion layer and conducting film, and make through following steps:
A. make said adhesion layer on the surface of said substrate;
B. make said conducting film through chemical deposition technique and/or physical deposition techniques on the surface of said adhesion layer.
2. according to the said method of claim 1, it is characterized in that the thickness of said adhesion layer is the 1/100-1/3 of said Seed Layer gross thickness, is preferably 1/50-1/5; And/or the thickness of said adhesion layer is 10～100nm, is preferably 20～60nm.
3. according to claim 1 or 2 said methods, it is characterized in that when making said adhesion layer in the steps A: vacuum degree is 1 * 10
-3～9 * 10
-3Mbar is preferably 1 * 10
-3～5 * 10
-3Mbar; Voltage is 500～700V, is preferably 560～660V; Argon flow amount is 300～450sccm, is preferably 350～400sccm.
4. according to each said method in the aforementioned claim, it is characterized in that, before implementation step A, said substrate is carried out ion beam milling;
Preferably, when said ion beam milling: vacuum degree 1 * 10
-4～9 * 10
-4Mbar is preferably 2 * 10
-4～5 * 10
-4Mbar; Voltage 2000～2800V is preferably 2200～2500V; Electric current 550～750mA is preferably 600～700mA; Etching period 2～10min is preferably 4～8min.
5. according to each said method in the aforementioned claim, it is characterized in that, before implementation step A, said substrate is carried out vacuum degassing;
Preferably, when said vacuum degassing: vacuum degree is 1 * 10
-4～5 * 10
-4Mbar is preferably 1 * 10
-4～3 * 10
-4Mbar; 100 ℃～120 ℃ of temperature.
6. according to each said method in the aforementioned claim, it is characterized in that the step of said pretreated substrate comprises:
Adopt deionized water to wash, and/or
Adopt alkaline degreaser to carry out oil removing, and/or
Ultrasonic waves for cleaning, and/or
Oven dry.
7. according to the said method of claim 6, it is characterized in that oven dry is carried out under 100 ℃～180 ℃ temperature; And/or oven dry is carried out in inert atmosphere.
8. according to each said method in the aforementioned claim, it is characterized in that said adhesion layer is become by titanium, nickel, chromium or copper; And/or said conducting film is copper film or nickel film or tin film.
9. according to each said method in the aforementioned claim, it is characterized in that the material of said substrate is resin substrate, glass fabric substrate or ceramic substrate.
10. according to each said method in the aforementioned claim, it is characterized in that, after steps A, detect the surface roughness of said adhesion layer; And/or, after step B, detect the surface roughness of said conducting film.
11. according to each said method in the aforementioned claim, it is characterized in that, in steps A, utilize magnetron sputtering technique to make said adhesion layer on the surface of said substrate.
12. a circuit board is characterized in that, it makes according to each said method in the aforementioned claim, wherein, said Seed Layer comprise strong bonded in the adhesion layer of substrate be formed on the conducting film on the said adhesion layer.
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| CN201010544633.0A CN102469700B (en) | 2010-11-12 | 2010-11-12 | Method for manufacturing circuit board and circuit board |
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| CN201010544633.0A CN102469700B (en) | 2010-11-12 | 2010-11-12 | Method for manufacturing circuit board and circuit board |
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| CN102469700B CN102469700B (en) | 2014-07-09 |
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Cited By (6)
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| CN104600022A (en) * | 2013-10-30 | 2015-05-06 | 泉州市金太阳照明科技有限公司 | Method for manufacturing interconnect circuit |
| CN104735899A (en) * | 2013-12-19 | 2015-06-24 | 富葵精密组件(深圳)有限公司 | Flexible circuit board and manufacturing method thereof |
| CN106686895A (en) * | 2016-12-30 | 2017-05-17 | 昆山元茂电子科技有限公司 | Surface treatment method for printed circuit board |
| CN109561585A (en) * | 2017-09-27 | 2019-04-02 | 深圳市博敏电子有限公司 | Ceramic base circuit board preparation process |
| CN115066088A (en) * | 2022-06-30 | 2022-09-16 | 浙江华正新材料股份有限公司 | Printed circuit board and preparation method thereof |
| CN116334556A (en) * | 2023-03-14 | 2023-06-27 | 中国科学院兰州化学物理研究所 | Preparation method of polymer composite copper foil copper seed layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022271495A1 (en) * | 2021-06-25 | 2022-12-29 | Corning Incorporated | Method for forming metal layers on glass-containing substrate, and resulting device |
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| CN102469700B (en) | 2014-07-09 |
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Effective date of registration: 20230612 Address after: 3007, Hengqin international financial center building, No. 58, Huajin street, Hengqin new area, Zhuhai, Guangdong 519031 Patentee after: New founder holdings development Co.,Ltd. Address before: 100871, Beijing, Haidian District, Cheng Fu Road, No. 298, Zhongguancun Fangzheng building, 5 floor Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. |
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